• 한국광학회지
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• 제8권4호
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• pp.345-352
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• 1997

최신(4GDRAM)의 MASK design에서는 전자기파의 산란에 의한 효과를 고려해 주는 것이 매우 중요하다. 이를 위하여 시간 영역에서의 요한 차분법을 도입하여 직접 마스크 함수를 계산하였다. 새롭게 도입한 마스크 함수를 사용함으로써 마스크와 렌즈의 효과뿐만 아니라, submicron 노광용 위상 변이 마스크의 식각된 옆벽에서의 산란효과를 정확하게 설명할 수 있었다. 산란효과를 줄이기 위해 변형된 마스크의 형태에 따른 특성을 살펴보았고, dual etch back에 의한 마스크 변형이 가장 좋은 공정 여유도를 제공함을 확인하였다.

• 설비공학논문집
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• 제13권7호
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• pp.579-587
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• 2001

This study investigates particle collection characteristics of a cylindrical electrostatic precipitator. Experimental work has been made for the submicron particles. The effects of polarity of discharge electrode wire, particle diameter, gas velocity, gas temperature, and specific corona power on the particle collection efficiency are investigated. The efficiency of negative corona is higher than that of positive corona. as the particle diameter increases, the efficiency is decreased when the diameter is in the range of 0.02-0.6 micron, but is increased for the nanometer particles with diameter smaller than 0.02 micron. The efficiency is increased with increase of specific corona power. As the gas temperature increases, overall collection efficiency is increased for a negative corona, but is deceased for a positive corona.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.875-878
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• 1999

In this paper, we measured and simulated the transconductance change of submicron LDD NMOSFETs due to back bias under various channel length, temperature and substrate doping conditions. As back bias is increased, the mobility will decrease and g$_{m}$ decreases according to a conventional model. But as the channel length is reduced, this phenomenon is inverted and g$_{m}$ increases in the submicron region. This can be explained by analyzing the electron quasi Fermi potential in the channel. And the empirical formulae which show the g$_{m}$ change were induced. These will be helpful to enhance the efficiency and precision of IC design.esign.

• 한국정밀공학회지
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• 제17권5호
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• pp.124-130
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• 2000

For measuring out the submicron order straightness, a precision measuring device is developed in this paper. The device is constructed with a hydrostatic feed table and a capacitive type sensor which is mounted to the feed table. Straightness is acquired as substracting the motion error of feed table from the measured profile with probe. Motion error of feed table is simultaneously compensated upto 0.120${\mu}{\textrm}{m}$ of linear motion error and 0.20arcsec of angular motion error using the active controlled capillary. Reversal method and strai호t-edge is used fur estimating the measuring accuracy and from the experimental result, it is verified that the device has the measuring accuracy 0.030m. Also, through the practical application on the measurement of ground surface, it is confirmed that the device is very effective to measure the submicron order straightness.

• 전자공학회논문지A
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• 제31A권9호
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• pp.156-163
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• 1994

A new circuit simulator for submicron MOS desings was developed by enhancing SPICE3. The minimum conductance stepping, source stepping and pseudo transient methods are applied to improve the convergence. and SECSPICE uses the variation rate of the node volgage in the timestep algorithm. The modified BSIM model was implemented in SECSPICE for submicron MOS designs. And it gives the powerful user environments such as graphic user environments. As the results of test using real measured device data and circuits used in real production desing, we found it gave more accurage results than BSIM and the execution speed was 1.5~2.8 times faster than SPICE3.

• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.1027-1031
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• 2001

A new constant growth technique to conserve an initial grating height of V-groove AlGaAs/InGaAs quantum nanostructures above 1.0 $\mu\textrm{m}$ thickness has been successfully embodied on submicron gratings using low pressure metalorganic chemical vapor deposition. A GaAs buffer prior to an AlGaAs barrier layer on submicron gratings plays an important role in overcoming mass transport effects and improving the uniformity of gratings. Transmission electron microscopy (TEM) image shows that high-density V-groove InGaAs quantum wires (QWRs) are well confined at the bottom of gratings. The photoluminescence (PL) peak of the InGaAs QWRs is observed in the temperature range from 10 to 280 K with a relatively narrow full width at half maximum less than 40 meV at room temperature PL. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystal.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1993년도 추계 학술발표 강연 및 논문 개요집
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• pp.59-59
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• 1993

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2003년도 High Temperature Superconductivity Vol.XIII
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• pp.21-21
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• 2003

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 춘계학술대회 논문집
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• pp.335-336
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• 2009

• 한국재료학회지
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• 제30권5호
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• pp.223-230
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• 2020

As a case study on aspect ratio behavior, Kaolin, zeolite, TiO₂, pozzolan and diatomaceous earth minerals are investigated using wet milling with 0.3 mm media. The grinding process using small media of 0.3 pai is suitable for current work processing applications. Primary particles with average particle size distribution D₅₀, ~6 ㎛ are shifted to submicron size, D₅₀ ~0.6 ㎛ after grinding. Grinding of particles is characterized by various size parameters such as sphericity as geometric shape, equivalent diameter, and average particle size distribution. Herein, we systematically provide an overview of factors affecting the primary particle size reduction. Energy consumption for grinding is determined using classical grinding laws, including Rittinger's and Kick's laws. Submicron size is obtained at maximum frictional shear stress. Alterations in properties of wettability, heat resistance, thermal conductivity, and adhesion increase with increasing particle surface area. In the comparison of the aspect ratio of the submicron powder, the air heat conductivity and the total heat release amount increase 68 % and 2 times, respectively.