• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.2
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• pp.68-71
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• 2008

AlN crystals were grown by the sublimation process. As grown AlN crystals were the polycrystalline boule in the form of the agglomerate of small AlN single crystalline AlN. As-grown AlN boule has a length about 2${\sim}$3 mm long and a diameter of 1 inch. The carbon impurities were observed on the surface and inside of the grown AlN crystals and the growth behavior was investigated by optical microscopy and SEM observation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.5
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• pp.242-245
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• 2009

AlN crystals were grown by a sublimation process without seed crystals and the growth morphology of them was characterized. The grown AlN crystals were a polycrystalline phase, which had a diameter of $60\sim200\;{\mu}m$ and were grown with a growth rate of $0.2\sim0.5\;{\mu}n/hr$. It was observed that the as-grown crystals had a hexagonal crystal structure and revealed that these crystals were grown with a morphology of columnar morphology in the initial stage of the growth before they were enlarged in a way of a lateral growth behavior in the final stage. On the surface, a lot of pinholes were observed on the surface of crystals grown. The evolution of a growth morphology was characterized by optical and scanning electron microscopic observation.

• Journal of the Korea Fashion and Costume Design Association
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• v.12 no.4
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• pp.207-221
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• 2010

This study aim to suggest how alter the korean traditional image design for umbrellas by sublimation transfer digital textile printing. Umbrellas are highly depend on design and made from polyester fiber which is proper item to utilize sublimation transfer digital textile printing. Sublimation transfer digital textile printing system can use computer system to create the delicate high dense images and one full layout through the hole umbrella. It can create distinctive style of design compare with former screen printing umbrella design. As a result of this study, Korean traditional images were adopted and recreated for umbrellas as the modern practical item. 7 of umbrella designs were developed and sample umbrellas could be produced in short period comparing with screen printing process. Through this study, as green printing process, sublimation transfer digital textile printing will be more applied to manufacture high quality textile products along with design development, thus it is expected as an alternative plan to leads growth of umbrella industries.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.3
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• pp.105-109
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• 2017

AlN single crystal was thermally treated at $1200^{\circ}C$ and $1500^{\circ}C$ in the ambient gas of nitrogen. AlN single crystal was obtained by sublimation growth process using by a facility having a growth part which was heated by RF (Radio Frequency) induction heating. In this report, the optical microscopic results taken from thermally treated AlN single crystal and FWHM (Full width of half maximum) measured by DCXRD (Double crystal X-ray Diffractometry) were reported.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.166-169
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• 2001

6H-SiC bulk crystals were grown by sublimation method with different conditions in term of gaseous pressures ad source temperatures. In order to optimize the growth rate, pressure at growth period and source and substrate temperatures were investigated as experimental variables. the results were compared with each other and finally the optimum growth conditions were discussed. Furthermore the relation of the growth steps and defects formation was evaluates in the point of reducing the micropipes. Subsequently the growth steps and defects formation was evaluated in the point of reducing the micropipes. Subsequently the growth steps were observed leading to the lower step height with the lower growth rate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.344-349
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• 2006

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. We aimed to systematically investigate the dependence of SiC epilayer quality and growth rate during the sublimation growth using the CST method on various process parameters such as the growth temperature and working pressure. The etched surface of a SiC epitaxial layer grown with low growth rate $(30{\mu}m/h)$ exhibited low etch pit density (EPD) of ${\sim}2000/cm^2$ and a low micropipe density (MPD) of $2/cm^2$. The etched surface of a SiC epitaxial layer grown with high growth rate (above $100{\mu}m/h$) contained a high EPD of ${\sim}3500/cm^2$ and a high MPD of ${\sim}500/cm^2$, which indicates that high growth rate aids the formation of dislocations and micropipes in the epitaxial layer. We also investigated the Schottky barrier diode (SBD) characteristics including a carrier density and depletion layer for Ni/SiC structure and finally proposed a MESFET device fabricated by using selective epilayer process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.44-49
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• 1995

Abstract The surface of 6H - SiC bulk crystal grown by sublimation process was investigated by optical microscope observation. Since, in the 6H crystal growing, the crystal had the habitual step growth attitude such that the lateral growth rate along the random a - axis orientation was higher than that along the c - axis of the growth direction, then many steps were developed. There were, also, many micropipes on the surface in the form of as-like large voids. However, they were differenciated with pores and cross- sectional shape of them were close to the circle. In this study, many micropipes, planar defects and the growth steps appeared on the grown crystal surface were investigated.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.796-799
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• 2002

BSCCO thin films are fabricated via a co-deposition process at an ultra-low growth rate using ion beam sputtering. The sticking coefficient of Bi element exhibits a characteristic temperature dependence. This temperature dependence of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi$_2$O$_3$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.3
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• pp.85-92
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• 2015

SiC crystals are well known for their true potential as high power devices and their crystal growth activity is actively carried out in domestic as well as in abroad. Until now the process to grow this crystal has been done by sublimation technique using radio frequency induction heating method. However in order to get better quality of SiC crystals, the stability of temperature is needed because SiC crystal tends to transform to other polytypes. So, the possibility of SiC crytals growth was evaluated by different heating method. This study aimed to observe whether the resistant heating method would show stable growth and better quality of SiC single crystal than that of RF induction heating. As a result, polycrystalline SiC crystals were grown by the growth rate of 0.02~0.5 mm/hr under the condition of $2100{\sim}2300^{\circ}C$ at the bottom side of the crucible and 10~760 torr. The polycrystalline SiC crystals with 0.25 and 0.5 mm in thickness were grown successfully without seed and characterized by optical stereo microscopic observation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.50-59
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• 1995

Abstract 6 H - SiC single crystal was grown by sublimation growth system which was self - designed and manufactured. In order that the SiC source might be decomposited and sublimed and deposited on the 6H - seed substrate grown by Acheson method, the temperature gradient, the growth parameters of growth temperature and pressure were operately adjusted. So we could get the optimum temperature gradient inside of the crucible. The graphite crucible with SiC powder and thermal shield componants were purified at the elevated temperature by means of Ar purging process and the source baking, then it distributed to reduce the amount of the impurities come from those parts. It was recognized that the optimum growth temperature of the crucible was$2300~2400^{\circ}C$ at the Ar atmospheric pressure of 200~400 torr, and at that moment the growth rate was 500~1000 $\mu\textrm{m}$. And then, the as- grown crystal was cut with the wafer form, the evaluation about the crystal was carried out by XRD, the optical microscopic observation and FT IR spectrum measurement.