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http://dx.doi.org/10.6111/JKCGCT.2015.25.3.085

A study on SiC crystal growth by sublimation process using resistance heating method  

Kang, Seung Min (Department of Advanced Materials Science and Engineering, Hanseo University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.25, no.3, 2015 , pp. 85-92 More about this Journal
Abstract
SiC crystals are well known for their true potential as high power devices and their crystal growth activity is actively carried out in domestic as well as in abroad. Until now the process to grow this crystal has been done by sublimation technique using radio frequency induction heating method. However in order to get better quality of SiC crystals, the stability of temperature is needed because SiC crystal tends to transform to other polytypes. So, the possibility of SiC crytals growth was evaluated by different heating method. This study aimed to observe whether the resistant heating method would show stable growth and better quality of SiC single crystal than that of RF induction heating. As a result, polycrystalline SiC crystals were grown by the growth rate of 0.02~0.5 mm/hr under the condition of $2100{\sim}2300^{\circ}C$ at the bottom side of the crucible and 10~760 torr. The polycrystalline SiC crystals with 0.25 and 0.5 mm in thickness were grown successfully without seed and characterized by optical stereo microscopic observation.
Keywords
Resistant heating method; SiC; Crystal; Growth;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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