• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.167-170
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• 2021

Integrated passive device (IPD) technology has emerged with the need for 5G. In order to integrate and miniaturize capacitors inside IPD, various studies are actively performed using high-k materials and trench structures. In this paper, an EM(Electromagnetic) simulation study was performed by applying an oxide dielectric to the capacitors having a various trench type structures. Commercially available materials HfO₂, Al₂O₃, and Ta₂O₅ are applied to non, circle, trefoil, and quatrefoil type trench structures to confirm changes in each material or structure. As a result, the bigger the capacitor area and the higher dielectric constant of the oxide dielectric, the insertion loss tended to decrease.

• Journal of IKEEE
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• v.22 no.4
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• pp.1234-1237
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• 2018

For 4H-SiC trench MOSFET which can reduce on-resistance and switching losses compared to 4H-SiC planar MOSFET, the optimization study for decrease of sub-trench was carried out. In order to decrease sub-trench, Ar reshape process was used and trench shapes were observed as a function of temperature and process time. As a result, it was confirmed that the process conditions for $1500^{\circ}C$ and 20 min were most effective for the suitable trench profiles. In addition, dry/wet oxidation was performed at the Ar reshaped-samples to observe the oxidation thickness with different crystal orientations.

• Journal of IKEEE
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• v.25 no.2
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• pp.350-355
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• 2021

IGBT is a power semiconductor device that contains both MOSFET and BJT structures, and it has fast switching speed of MOSFET, high breakdown voltage and high current of BJT characteristics. IGBT is a device that targets the requirements of an ideal power semiconductor device with high breakdown voltage, low V_CE-SAT, fast switching speed and high reliability. In this paper, we analyzed Gate oxide thickness, Trench Gate Width, and P+Emitter width, which are the top process parameters of 1,200V Trench Gate Field Stop IGBT, and suggested the optimized top process parameters. Using the Synopsys T-CAD Simulator, we designed IGBT devices with electrical characteristics that has breakdown voltage of 1,470 V, V_CE-SAT 2.17 V, Eon 0.361 mJ and Eoff 1.152 mJ.

• Journal of IKEEE
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• v.25 no.2
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• pp.344-349
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• 2021

This paper proposes a structure in which Trench SiO₂ is grown inside of Super Junction IGBT P-Pillar. When observing the electric field in 3D, we checked the region where the electric field have not affected inside of the P-Pillar. The pillar region's portion resistance is varied by the breakdown voltage and size of each pillar, which reduces the size by growing SiO₂ after trenching has no field effect inside of that. At 4.5kV the same breakdown voltage, it was confirmed that the On-state voltage drop improved by about 58%, 19% compared to Field Stop IGBT and conventional Super Junction IGBT.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.64-64
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• 1996

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.421-424
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• 2004

As the deep sub-micron devices are recently integrated high package density, novel process method for sub $0.1{\mu}m$ devices is required to get the superior thin gate oxide characteristics and reliability. However, few have reported on the electrical quality and reliability on the thin gate oxide. In this paper I will recommand a novel shallow trench isolation structure for thin gate oxide $30{\AA}$ of deep sub-micron devices. Different from using normal LOCOS technology, novel shallow trench isolation have a unique 'inverse narrow channel effects' when the channel width of the devices is scaled down shallow trench isolation has less encroachment into the active device area. Based on the research, I could confirm the successful fabrication of shallow trench isolation(STI) structure by the SEM, in addition to thermally stable silicide process was achiever. I also obtained the decrease threshold voltage value of the channel edge and the contact resistance of $13.2[\Omega/cont.]$ at $0.3{\times}0.3{\mu}m^2$. The reliability was measured from dielectric breakdown time, shallow trench isolation structure had tile stable value of $25[%]{\sim}90[%]$ more than 55[sec].

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.222-226
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• 2016

This paper investigated the trench process, unified field limit ring, and other products for the development of a 500 V-level unified trench gate power MOSFET. The optimal base chemistry for the device was found to be SF₆. In SEM analysis, the step process of the trench gate and field limit ring showed outstanding process results. After finalizing device design, its electrical characteristics were compared and contrasted with those of a planar device. It was shown that, although both devices maintained a breakdown voltage of 500 V, the Vth and on-state voltage drop characteristics were better than those of the planar type.

• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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• v.8 no.1
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• pp.887-894
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• 2018

We investigated the position controlling C60 fullerene encapsulated into a graphene-nanoribbon trench via classical molecular dynamics simulations. The graphene-nanoribbon trench can provide nanoscale empty spaces, and a C60 encapsulated therein can be considered as media for a nanoelectromechanical shuttle device. The classical molecular dynamics simulations presented here provide information on the potential application of a graphene-nanoribbon trench in a C60 shuttle device. Driving forces applied to C60 resulted in its motion toward the edges of the graphene-nanoribbon trench, the suction forces induced at both edges were balanced with the driving forces, and finally, the C60 fullerene gradually settled on the edges of the graphene-nanoribbon trench after several oscillations. The results of the present simulation suggest the importance of graphene-nanoribbon trenches encapsulating fullerenes in a wide range of applications in the field of nanotechnology.

• Economic and Environmental Geology
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• v.56 no.5
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• pp.581-588
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• 2023

This study reports depth-dependent elemental distribution and mineral abundance of the oceanic sediment sample (WP21GPC04) near the Mariana Trench collected during the WP21 expedition in 2021. The elemental distribution determined by μ-XRF shows no significant differences with varying depth, with an average SiO₂ 53.91 wt%, FeO 4.48 wt%, Al₂O₃ 16.56 wt%, MgO 2.56 wt%, CaO 4.79 wt%, Na₂O 3.52 wt%, K₂O 5.48 wt%, similar to the average chemical composition of global subducting sediments (GLOSS). The mineral abundances analyzed using synchrotron XRD, however, vary with depth. While quartz, mica, and plagioclase were identified at all depths, chlorite was found at shallow depths, and zeolite group minerals, phillipsite and heulandite, showed a gradual change in phase fraction with depth. This suggests a change in sedimentation and alteration environments in the region, or the potential for coexistence emerges due to similar sediment stability. Overall, this study will provide a basis for the future investigations on the evolution of sedimentary environment near the Mariana Trench in the western Pacific Ocean and the phase distribution and the behavior of subducting oceanic sediments, which will affect the lithological and geochemical characteristics of the Mariana susduction system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.291-293
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• 2000

In 64M DRAM, sub-1/4m NMOSFETs with STI(Shallow Trench Isolation), anomalous hump phenomenon of subthreshold region, due to capped p-TEOS/SiN interlayer induced defect, is reported. The hump effect was significantly observed as channel length is reduced, which is completely different from previous reports. Channel Boron dopant redistribution due to the defect should be considered to improve hump characteristics besides consideration of STI comer shape and recess.