• Journal of the Korean Ceramic Society
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• v.49 no.1
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• pp.43-47
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• 2012

Electromigration in molten $Ge_2Sb_2Te_5$ (GST) was characterized using pulsed DC stress to an isolated line structure. When an electrical pulse was applied to the GST, GST lines were melted by Joule heating, and Ge and Sb atoms migrate to the cathode, whereas Te atoms migrate to the anode. This elemental separation in the molten GST was caused by an electrostatic force-induced electromigration. The effects of O-, N-, and Bi-doping on the electromigration were also investigated, and atomic mobility changes by the doping were investigated by quantifying $DZ^*$ values. The Bi -doping did not affect the $DZ^*$ values of the constituent atoms in the molten GST, but the D$DZ^*$ values decreased by O-doping and N-doping.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.601-607
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• 2015

A set of novel silicon controlled rectifier (SCR) devices' characteristics have been analyzed and verified under the electrostatic discharge (ESD) stress. A ring-shaped diffusion was added to their anode or cathode in order to improve the holding voltage (Vh) of SCR structure by creating new current discharging path and decreasing the emitter injection efficiency (${\gamma}$) of parasitic Bipolar Junction Transistor (BJT). ESD current density distribution imitated by 2-dimensional (2D) TCAD simulation demonstrated that an additional current path exists in the proposed SCR. All the related devices were investigated and characterized based on transmission line pulse (TLP) test system in a standard $0.5-{\mu}m$ 24 V CDMOS process. The proposed SCR devices with ring-shaped anode (RASCR) and ring-shaped cathode (RCSCR) own higher Vh than that of Simple SCR (S_SCR). Especially, the Vh of RCSCR has been raised above 33 V. What's more, their holding current is kept over 800 mA, which makes it possible to design power clamp with SCR structure for on chip ESD protection and keep the protected chip away from latch-up risk.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.65 no.2
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• pp.114-121
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• 2016

This paper is Instant space vector PWM(Pulse Width Modulation)power conversion devices in switching power semiconductors from my generation to losses and switching when the voltage surge and current surge of electronic noise(EMI: Electro Magnetic Interference / RFI: Radio Frequency Interference)to effectively minimize the power soft-switching power conversion circuit topologies of auxiliary resonant DC tank for the purpose of high performance realization of the electric power conversion system by the high-speed switching of a semiconductor device(AQRDCT simultaneously : an active auxiliary resonance using auxiliary Quasi-resonant DC tank)DC link snubber switch has adopted a three-phase voltage inverter. AQRDCL proposed in this paper can reduce the effective and current peak stress of the power semiconductors of the auxiliary resonant snubber circuit compared to the conventional active-resonant DC link snubber, it is not necessary to install the clamp switch of the auxiliary resonant DC link, DC the peak current and power loss of the bus line can be reduced.

• Journal of Power Electronics
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• v.12 no.3
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• pp.377-386
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• 2012

An interleaved bridgeless buck-boost AC/DC converter is presented in this paper to achieve the characteristics of low conduction loss, a high power factor and low harmonic and ripple currents. There are only two power semiconductors in the line current path instead of the three power semiconductors in a conventional boost AC/DC converter. A buck-boost converter operated in the boundary conduction mode (BCM) is adopted to control the active switches to achieve the following characteristics: no diode reverse recovery problem, zero current switching (ZCS) turn-off of the rectifier diodes, ZCS turn-on of the power switches, and a low DC bus voltage to reduce the voltage stress of the MOSFETs in the second DC/DC converter. Interleaved pulse-width modulation (PWM) is used to control the switches such that the input and output ripple currents are reduced such that the output capacitance can be reduced. The voltage doubler topology is adopted to double the output voltage in order to extend the useable energy of the capacitor when the line voltage is off. The circuit configuration, principle operation, system analysis, and a design example are discussed and presented in detail. Finally, experiments on a 500W prototype are provided to demonstrate the performance of the proposed converter.

• Journal of the Korean Society for Heat Treatment
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• v.4 no.3
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• pp.54-62
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• 1991

The effect of tempering temperature on the ultrasonic propagation velocity at SCM 440 steel quenched from $870^{\circ}C$ and $1000^{\circ}C$ has been studied by metallurgical and crystallographical observation. The measurements of ultrasonic velocity were made on the specimen by appling an immersion ultrasonic pulse-echo technique with a constant frequency of 10 MHz. The quenched microstructure of this steel was a lath martensite. As the tempering temperature was increased, the martensite was transformed into the tempered martensite composed of cementite and carbide. The ultrasonic velocity increased with increasing the tempering temperature. It was thought that these were resulted from the microstructural transformation. The change of ultrasonic propagation velocity with quenching and tempering heat treatment was resulted from microstrain due to the change of internal stress. Considering these results concerning to the change of ultrasonic propagation velocity. the phenomena of microstructural transformation were estimated. Consequently, it was thought that the degree of quenching and tempered heat treatment of steel could be nondestructively evaluated with the change of ultrasonic propagation velocity.

• Journal of Electrical Engineering and Technology
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• v.9 no.4
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• pp.1296-1308
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• 2014

This paper presents a new zero voltage switching (ZVS) converter for medium power and high input voltage applications. Three three-level pulse-width modulation (PWM) circuits with the same power switches are adopted to clamp the voltage stress of MOSFETs at $V_{in}/2$ and to achieve load current sharing. Thus, the current stresses and power ratings of transformers and power semiconductors at the secondary side are reduced. The resonant inductance and resonant capacitance are resonant at the transition interval such that active switches are turned on at ZVS within a wide range of input voltage and load condition. The series-connected transformers are adopted in each three-level circuit. Each transformer can work as an inductor to smooth the output current or a transformer to achieve the electric isolation and power transfer. Thus, no output inductor is needed at the secondary side. Three center-tapped rectifiers connected in parallel are used at the secondary side to achieve load current sharing. Compared with the conventional parallel three-level converters, the proposed converter has less switch counts. Finally, experiments based on a 1.44kW prototype are provided to verify the operation principle of proposed converter.

• Journal of Power Electronics
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• v.14 no.3
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• pp.478-487
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• 2014

This study presents a new interleaved three-level zero-voltage switching (ZVS) converter for high-voltage and high-current applications. Two circuit cells are operated with interleaved pulse-width modulation in the proposed converter to reduce the current ripple at the input and output sides, as well as to decrease the current rating of output inductors for high-load-current applications. Each circuit cell includes one half-bridge converter and one three-level converter at the primary side. At the secondary side, the transformer windings of two converters are connected in series to reduce the size of the output inductor or switching current in the output capacitor. Based on the three-level circuit topology, the voltage stress of power switches is clamped at $V_{in}/2$. Thus, MOSFETs with 500 V voltage rating can be used at 800 V input voltage converters. The output capacitance of the power switch and the leakage inductance (or external inductance) are resonant at the transition interval. Therefore, power switches can be turned on under ZVS. Finally, experiments verify the effectiveness of the proposed converter.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2009.05a
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• pp.384-387
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• 2009

There is an increasing demand for efficient high power/weight auxiliary power supplies for use on high speed traction application. Many new conversion techniques have been proposed to reduce the voltage and current stress of switching components, and the switching losses in the traditional pulse width modulation (PWM) converter. Especially, the phase shift full bridge zero voltage switching PWM techniques are thought must desirable for many applications because this topology permits all switching devices to operate under zero voltage switching(ZVS) by using circuit parasitic components such as leakage inductance of high frequency transformer and power device junction capacitance. The proposed topology is found to have higher efficiency than conventional soft-switching converter. Also it is easily applicable to phase shift full bridge converter by applying an energy recovery snubber consisted of fast recovery diodes and capacitors.

• Journal of Power Electronics
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• v.17 no.6
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• pp.1391-1401
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• 2017

In this paper, a secondary resonance half-bridge dc-dc converter with an inductive output filter is presented. The primary side of such a converter utilizes asymmetric pulse width modulation (APWM) to achieve zero-voltage switching (ZVS) of the switches, and clamps the voltage of the switch to the input voltage. In addition, zero current switching (ZCS) of the output diode is achieved by a half-wave rectifier circuit with a filter inductor and a resonant branch in the secondary side of the proposed converter. Thus, the switching losses and diode reverse-recovery losses are eliminated, and the performance of the converter can be improved. Furthermore, an inductive output filter exists in the converter reduce the output current ripple. The operational principle, performance analysis and design equation of this converter are given in this paper. The analysis results show that the output diode voltage stress is independent of the duty cycle, and that the voltage gain is almost linear, similar to that of the isolation Buck-type converter. Finally, a 200V~380V input, 24V/2A output experimental prototype is built to verify the theoretical analysis.

• The Journal of Korean Medicine Ophthalmology and Otolaryngology and Dermatology
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• v.15 no.2
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• pp.183-189
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• 2002

Tinnitus is usually due to insufficiency of Kidney-essence, asthenia of the Spleen and Stomach, diseases caused by exogenous pathogenic factor, Liver fire(肝火) by severe stress, Phlegm -fire(痰火) by surfeit of high caloric food and alcoholic liquor. I observed and treated four patients who had been diagnosed with tinnitus of Liver-fire(肝火) and Phlegm-fire(痰火). After I checked the Inyeong(人迎) and the chon spot(寸口), all of their Inyeong were stronger than chon spot. Unbalance of the Inyeong(人迎) and the chon spot(寸口), and symptoms of tinnitus were removed by Acupuncture therapy of three Yang meridians of the hand(手三陽) and three Yang meridians of the foot(足三陽).