• Title/Summary/Keyword: Stray inductance

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An Imrpoved Gate Control Scheme for Overvoltage Clamping under IGBT Series Connection (IGBT 직렬 연결시 과전압 제한을 위한 게이트 구동기법)

  • Kim, Wan-Jong;Choe, Chang-Ho;Hyeon, Dong-Seok
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.48 no.2
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    • pp.83-88
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    • 1999
  • Series connection of power semiconductor devices is selected in high voltage and high power applications. It is important to prevent the overvoltage from being induced across a device above ratings by the proper voltage balancing in the field of IGBT series connection. In addition, the overvoltage induced by a stray inductance has to be limited in the high power circuit. This paper proposes a new gate control scheme which can balance the voltage properly and limit the overshoot by controlling the slope of collector voltage under the turn-off transient in the series connected IGBTs. The proposed gate control scheme changes the slope of collector voltage by sensing the collector voltage and controlling the gate signal actively. The new series connected IGBT gate driver is made and its validity is verified by the experimental results for series connected IGBT circuit.

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Compact Pulse Generator Using a Rotating Disk with Sparking Holes (회전공판형 컴펙트 펄스 발생장치)

  • Lee, Jong-Hoon;Kwon, Nam-Yeol;Lee, Seung-Hoon;Shin, Jung-Min;Moon, Jae-Duk
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1870-1872
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    • 2003
  • High voltage pulse generator with fast rise time has been studied theoretically and experimentally. The complexity and stray inductance of a pulse generator components can be very difficult to reduce. As a result, a compact size and stable Pulse can be obtained by using a rotary air-hole. Parametric studies showed that the rise time of the output pulse was depended little on the change of the revolutions per minute(RPM) while the pulse width of the output pulse was depended greatly upon the change of the revolutions per minute (RPM).

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Dielectric Properties and Equivalent Circuit of $Z_nO$ Varistor ($Z_nO$ 바리스터의 유전특성 및 등가회로)

  • Her, J.S.;Park, S.H.;Kang, D.H.
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1418-1420
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    • 2003
  • In this study capacitance and dielectric loss tan${\delta}$were measured with frequency changes for commercial $Z_nO$ varistors with pin-type leads and equivalent circuit simulation was proposed. The leakage inductance in pin leads and the stray caoacitance could be seperated from the dielectric characteristics of $Z_nO$ varistors by the simulation of equivalent circuit. The equivalent circuit model considered semiconduction layer, dielectric layer and depletion layer as the grain boundary structure of varistor is well fitted to the observed data.

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An Improved Gate Control Scheme of Series Connected IGBTs (IGBT 직렬 연결을 위한 게이트 구동기법)

  • Kim, Wan-Jung;Choi, Chang-Ho;Hyun, Dong-Seok
    • Proceedings of the KIEE Conference
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    • 1998.11a
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    • pp.195-197
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    • 1998
  • The large scale industry needs high voltage converters. Therefore series connection of power semiconductor devices is necessary. It is important to prevent a device induced the overvoltage above ratings by proper voltage balancing in the field of IGBT series connection. In addition, the overvoltage induced by a stray inductance has to be limited in the high power circuit. This paper proposes a new gate control scheme which can balance the voltage properly and limit the overshoot by control the slope of collector voltage under series connected IGBT turn-off transient. The propose gate control scheme limits the overvoltage by sensing the collector voltage and controlling the gate signal actively. The new series connected IGBT gate driver is made and its validity is verified by the experimental results for series connected IGBT circuit.

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SiC Motor Drive for Elevator System (엘리베이터 시스템을 위한 SiC 권상기 드라이브)

  • Gwon, Jin-Su;Moon, Seok-Hwan;Kim, Ju-Chan;Lee, Joon-Min
    • The Transactions of the Korean Institute of Power Electronics
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    • v.24 no.3
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    • pp.147-152
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    • 2019
  • With the recent emphasis on the importance of energy conservation, studies on high-efficiency elevator systems are being continuously conducted. Therefore, pulse width modulation converters are commonly used in traction drives on elevator systems. Wide bandgap devices have been increasingly commercialized, and their application to power conversion systems, such as renewable and energy storage system, has been gradually increasing. In this study, a SiC inverter for an elevator traction drive is investigated. In particular, an inverter is designed to minimize stray and parasitic inductance. Input and output filters are designed by considering switching frequency. The designed SiC inverter reduces volume by approximately 32% compared with that of a Si inverter, and power converter efficiency is over 98.8%.

A Development of Jig Circuit for Performance Evaluation of an Oscillator (발진기의 성능평가를 위한 지그 회로의 개발)

  • Lin, Chi-Ho;Yoon, Dal-Hwan
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.11
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    • pp.95-101
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    • 2008
  • We have used diversely the multilayer ceramic oscillator of the SMD(Surface Mounted Device) package technology that connects the crystal with the chip package. Such an oscillator occurs a stray inductance and a parasitic capacitance by the length and inner pattern. And it has been happened an amplitude attenuation and signal loss due to the reflection of power source and noise component. So we don't evaluate the precise performance of the oscillator for these factors. In this paper we have developed the Jig system to evaluate the performance of the oscillator. Through this system, we will expect an advanced performance of the oscillator and redesign an oscillator of the low jitter characteristics and low phase noise.

An Improved Turn-Off Gate Control Scheme for Series Connected IGBTs (IGBT 직렬 연결을 위한 턴-오프 게이트 구동기법)

  • 김완중;최창호;현동석
    • The Transactions of the Korean Institute of Power Electronics
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    • v.4 no.1
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    • pp.99-104
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    • 1999
  • The large scale industry needs high voltage converters. Therefore series connection of power semiconductor devices is necessary. It is important to prevent the overvoltage from being induced across a device above ratings by the proper voltage balancing in the field of IGBT series connection. In addition, the overvoltage induced by a stray inductance has to be limited in the high power circuit. This paper proposes a new gate control scheme which can balance the voltage properly and limit the overshoot by controlling the slope of collector voltage under the turn-off transient in the series connected IGBTs. The proposed gate control scheme which senses the collector voltage and controls the gate signal actively limits the overvoltage. The new series connected IGBT gate driver is made and its validity is verified by the experimental results in the series connected IGBT circuit.

Development of Digital Carriage for Continuous/Intermittent Welding (디지털식 연속/단속 용접용 캐리지 개발)

  • 감병오;김동규;김광주;김상봉
    • Journal of Ocean Engineering and Technology
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    • v.16 no.1
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    • pp.64-70
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    • 2002
  • This paper shows the results of the development of a small size of digital type continuous and intermittent welding auto-carriage based on microprocessor (Intel 80196KC) for welding process with long welding line. The developed welding auto-carriage loads welding torch and tracks welding line. It is an automaton largely used for welding process with a lot of long welding lines such as shipbuilding and structure. Most traditional auto-carriages have been developed based on analog circuit for open loop control. So this analog circuit welding auto-carriage cannon control welding speed. Specially welding auto-carriage for intermittent welding condition is so complicated and has the low precision of control performance in welding distance and non-welding distance. The auto-carriage developed in this paper has the following characteristics: It has not only functions of traditional carriage but also functions such as pseudo-welding process of big iron structures, intermittent welding in order to limit heat for welding thin plates, crater treatment of the final step of welding, acceleration at the initial step of welding and deceleration in the final step of welding. The main control board of auto-carriage, power supply system and DC motor drive wee developed and manufactured. The welding speed and the welding distance of the developed auto-carriage are controlled accurately by feedback control using photo-sensor. Hardware and software robust against the heat and noise produced on the welding process are developed.

Spectral Analysis and Performance Evaluation of VCXO using the Jig System (지그시스템을 이용한 VCXO의 스펙트럼 분석 및 성능평가)

  • Yoon Dal-Hwan
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.43 no.4 s.310
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    • pp.45-52
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    • 2006
  • In his paper, we have developed the SMD(surface mounted device) type PECL(positive emitter-coupled logic) VCXO of the $5{\times}7mm$ size for gratifying the requested specifications and the multilayer ceramic SMD(surface mounted device) package technology. The VCXO wired with the PECL(positive emitter coupled logic) package take place a stray inductance and a parasitic capacitance by the length and the inner pattern of the VCXO and the amplitude attenuation and signal loss due to the reflection of power source and the noise component. We have developed the Zig system to analyze the precise spectrum and evaluate the performance. The basic operating voltage is the 3.3 V and have the frequency range of 120MHz-180MHz. The Q factor is over 5K and it has the low jitter characteristics of 3.5 ps and low phase noise.

Improved Gate Drive Circuit for High Power IGBTs with a Novel Overvoltage Protection Scheme (과전압 제한 기능을 갖는 새로운 IGBT 게이트 구동회로)

  • Lee, Hwang-Geol;Lee, Yo-Han;Suh, Bum-Seok;Hyun, Dong-Seok;Lee, Jin-Woo
    • Proceedings of the KIEE Conference
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    • 1996.11a
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    • pp.346-349
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    • 1996
  • In application of high power IGBT PWM inverters, the treatable power range is considerably limited due to the overvoltage caused by the stray inductance components within the power circuit. This paper proposes a new gate drive circuit for IGBTs which can actively suppress the overvoltage across the driven IGBT at turn-off and the overvoltage across the opposite IGBT at turn-on while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage is limited much effectively at the larger collector current. The turn-on scheme is to decrease the rising rate of the collector current by increasing input capacitance during turn-on transient when the gate-emitter voltage is greater than threshold voltage. The experimental results under various normal and fault conditions prove the effectiveness of the proposed circuit.

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