• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.1
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• pp.55-59
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• 2003

With the progress of optical communication technology recently, the development of micro actuator using MEMS technology has been made for optical switching. The actuation types are various; electrostatic, electromagnetic, and electrostatic +electromagnetic etc. Among them, the electrostatic type is the most popular because of the relative ease of fabrication, integration and shielding as well as low power consumption. However, it needs a high voltage to generate a larger driving force. To overcome this problem, we proposed a new type of electrostatic actuator with an extra vertical electrode in addition to the horizontal one. The vertical electrode also lays a role of making the stable angular rotation as a stopper. From the theoretical analysis and experiment, we find the actuation voltage can be reduced up to 50 % of that of the conventional one.

• YAKHAK HOEJI
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• v.29 no.5
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• pp.291-301
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• 1985

주사제의 고무마개는 의약품과 직접 접촉하므로 보통 주사제의 용기로 규정되고 있다. 이러한 주사제용 고무마개의 필요조건과, 앞으로의 전망, 문제점에 관하여 검토해 보기로 한다.

• The korean journal of orthodontics
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• v.43 no.2
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• pp.96-100
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• 2013

Objective: To evaluate the effects of contamination by either blood or a hemostatic agent on the shear bond strength (SBS) of orthodontic buttons. Methods: We used 45 freshly extracted, non-carious, impacted third molars that were divided into 3 groups of 15. Each tooth was etched with 37% phosphoric acid gel for 30 s. Human blood or the blood stopper agent was applied to the tooth surface in groups I and II, respectively. Group III teeth were untreated (controls). Orthodontic buttons were bonded to the teeth using light-curing composite resin. After bonding, the SBS of the button was determined using a Universal testing machine. Any adhesive remaining after debonding was assessed and scored according to the modified adhesive remnant index (ARI). ANOVA with post-hoc Tukey's test was used to determine significant differences in SBS and Fisher's exact test, to determine significant differences in ARI scores among groups. Results: ANOVA indicated a significant difference between groups (p < 0.001). The highest SBS values were measured in group III ($10.73{\pm}0.96$ MPa). The SBS values for teeth in groups I and II were significantly lower than that of group III (p < 0.001). The lowest SBS values were observed in group I teeth ($4.17{\pm}1.11$ MPa) (p < 0.001). Conclusions: Contamination of tooth surfaces with either blood or hemostatic agent significantly decreased the SBS of orthodontic buttons. When the contamination risk is high, it is recommended to use the blood stopper agent when bonding orthodontic buttons on impacted teeth.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.31 no.9
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• pp.82-87
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• 2003

This research is concerned with ground experiments for satellite solar array deployment as well as the validation of theoretical modeling technique presented in the previous paper. We carried out the experiments on the strain energy hinge with stopper to investigate he buckling characteristics of the SEH, which affects the shape and the speed of the solar array deployment. The moment-angle diagram obtained from the experiments was later combined with the theoretical deployment model. This paper also presents the details of the ground experiments performed at the Korea Aerospace Research Institute(KARI) . It was found that the ground experimental results were in good agreement with the theoretical predictions thus validating the dynamic modeling technique.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.4
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• pp.821-825
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• 2004

The a-Si：H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si：H TFTs is inverted staggered. The gate electrode is formed by patterning with length of 8 ${\mu}m∼16 ${\mu}m. and width of 80∼200 ${\mu}m after depositing with gate electrode (Cr) 1500 under coming 7059 glass substrate. We have fabricated a-SiN：H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN：H (2000 ), a-Si：H(2000 ) and n+a-Si：H (500). We have deposited n+a-Si：H ,NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si：H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si：H TFTs decreasing parasitic capacitance of source-drain has channel length of 8 ~20 ${\mu}m and channel width of 80∼200 ${\mu}m. And it shows drain current of 8 ${\mu}A at 20 gate voltages, Ion/Ioff ratio of 108 and Vth of 4 volts.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 1994.10a
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• pp.155-159
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• 1994

본 연구에서는 Stopper가 있는 외팔보 실험을 통하여 간극이 있는 기계계의 응답을 관측하고, 이론 모델을 정립하여 관측된 현상을 설명하고자 한다. 또한, 이러한 해석을 바탕으로 설계변수변화에 따른 응답특성을 예측함으로써 정밀, 고속기계의 설계를 위한 기본자료를 정립하고자 한다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.643-644
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• 2011

• Smart Structures and Systems
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• v.14 no.5
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• pp.765-784
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• 2014

In comparison with conventional shape memory actuated structures, antagonistic shape memory alloy (SMA) actuators permits a fully reversible two-way response and higher response frequency. However, excessive internal stress could adversely reduce the stroke of the actuators under repeated use. The two-way shape memory effect might further decrease the range of the recovered strain under actuation of an antagonistic SMA actuator unless additional components (e.g., spring and stopper) are added to regain the overall actuation capability. In this paper, the performance of all four possible types of SMA actuation schemes is investigated in detail with emphasis on five key properties: recovered strain, cyclic degradation, response frequency, self-sensing control accuracy, and controllable maximum output. The testing parameters are chosen based on the maximization of recovered strain. Three types of these actuators are antagonistic SMA actuators, which drive with two active SMA wires in two directions. The antagonistic SMA actuator with an additional pair of springs exhibits wider displacement range, more stable performance under reuse, and faster response, although accurate control cannot be maintained under force interference. With two additional stoppers to prevent the over stretch of the spring, the results showed that the proposed structure could achieve significant improvement on all five properties. It can be concluded that, the last type actuator scheme with additional spring and stopper provide much better applicability than the other three in most conditions. The results of the performance analysis of all four SMA actuators could provide a solid basis for the practical design of SMA actuators.

• Journal of IKEEE
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• v.18 no.1
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• pp.114-118
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• 2014

This paper presents improvement of the production process of a unified fuel heater with the help of the performance evaluation system. In order to enhance a starting capability of diesel-engine car, the unified fuel heater is proposed, which consists of main body, upper plate, stopper, lower plate, PTC, screw, bimetal and terminals. In the proposed heater, the sensor is combined with heater body not only to maximize the performance of car but also to reduce the production cost. The performance test chamber is proposed to evaluate the performance of heater. Especially, an effective manufacturing progress for assembling the heater elements can cut down expenses.

• Journal of Information Display
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• v.12 no.1
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• pp.47-50
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• 2011

Highly stable amorphous indium.gallium.zinc-oxide (a-IGZO) thin-film transistors (TFTs) were fabricated with an etchstopper and via-hole structure. The TFTs exhibited 40 $cm^2$/V s field-effect mobility and a 0.21 V/dec gate voltage swing. Gate-bias stress induced a negligible threshold voltage shift (${\Delta}V_{th}$) at room temperature. The excellent stability is attribute to the via-hole and etch-stopper structure, in which, the source/drain metal contacts the active a-IGZO layer through two via holes (one on each side), resulting in minimized damage to the a-IGZO layer during the plasma etching of the source/drain metal. The comparison of the effects of the DC and AC stress on the performance of the TFTs at $60^{\circ}C$ showed that there was a smaller ${\Delta}V_{th}$ in the AC stress compared with the DC stress for the same effective stress time, indicating that the trappin of the carriers at the active layer-gate insulator interface was the dominant degradation mechanism.