• Journal of Sensor Science and Technology
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• v.26 no.2
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• pp.85-90
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• 2017

A wide dynamic range (WDR) CMOS image sensor (CIS) was developed with a specialized readout architecture for realizing high-sensitivity (HS) and low-sensitivity (LS) reading modes. The proposed pixel is basically a three-transistor (3T) active pixel sensor (APS) structure with an additional transistor. In the developed WDR CIS, only one mode between the HS mode for relatively weak light intensity and the LS mode for the strong light intensity is activated by an external controlling signal, and then the selected signal is read through each column-parallel readout circuit. The LS mode is implemented with the column capacitors and a feedback structure for adjusting column capacitor size. In particular, the feedback circuit makes it possible to change the column node capacitance automatically by using the incident light intensity. As a result, the proposed CIS achieved a wide dynamic range of 94 dB by synthesizing output signals from both modes. The prototype CIS is implemented with $0.18-{\mu}m$ 1-poly 6-metal (1P6M) standard CMOS technology, and the number of effective pixels is 176 (H) ${\times}$ 144 (V).

• Applied Chemistry for Engineering
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• v.17 no.4
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• pp.335-342
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• 2006

Metal aluminum, of which has a low standard reduction potential, participates in the electrochemical oxidation reaction and results in the structural change and accompanying property variation of aluminum and its oxide film. Aluminum was electrochemically etched in acid solution and the surface area was magnified by the formation of high density etch pits. Etched aluminum was covered with a compact and dense dielectric oxide film by anodization and applied to the capacitor electrode. Anodization of aluminum in acid solution at low temperature makes a nanoporous aluminum oxide layer which can be used for the fabrication template of nanostructural materials. Electrochemical characteristics of aluminum turn the metal aluminum into functional materials and it will bring the diverse applications of metal aluminum.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.247-248
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• 2006

Carbon nitride films were evaluated that they had many advantages for miniature micro-humidity-sensors using the standard CMOS technology humidity sensing properties and CV characteristics of the carbon nitride films have been investigated for fabricating one chip HUSFET(Humidity Sensitive Field Effect Transistor) humidity sensors Carbon nitride films were deposited on silicon substrate with meshed electrodes by reactive RF magnetron sputtering system. The capacitor-type humidity sensor revealed good humidity-impedance characteristics with a wide range of relative humidity changes, decreasing $254k{\Omega}$ to $16k{\Omega}$ according to increase of relative humidity between 5% ~ 95% and the films were very stable on the Si wafer. These results reveal that $CN_x$ thin films can be used for Si based or HUSFET structure one chip micro-humidity sensors.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.4
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• pp.286-292
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• 2006

This paper presents the design of a low-voltage wide-band switched-capacitor (SC) filter for wireless communication receiver applications. The filter is the 5th-order Elliptic lowpass filter. With the clock frequency of 50MHz implying that an effective sampling frequency is 100MHz with double sampling scheme, the cut-off frequency of the filter is programmable to be 1.25MHz, 2.5MHz, 5MHz and 10MHz. For low-power systems powered by a single-cell battery, the SC filter was elaborately designed to operate at 1.2V power supply. Simulation result shows that the 3rd-order input intercept point (IIP3) can be up to 27dBm. The filter was fabricated in a $0.25-{\mu}m$ 1P5M standard CMOS technology and measured frequency responses show good agreement with the simulation ones. The current consumption is 34mA at a 1.2V power supply.

• Proceedings of the KIEE Conference
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• 1997.07c
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• pp.1009-1011
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• 1997

This paper presents an optimization method which determines locations and size of capacitors simultaneously while minimizing power losses and improving voltage profile in radial distribution systems. Especially, the cost function associated with capacitor placement is considered as step function due to banks of standard discrete capacities. Genetic algorithms(GA) are used to obtain efficiently the solution of the cost function associated with capacitors which is non-continuous and non-differentiable function. The strings in GA consist of the node number index and size of capacitors to be installed. The length mutation operator, which is able to change the length of strings in each generation, is used. The proposed method which determines locations and size of capacitors simultaneously can reduce power losses and improve' voltage profile with capacitors of minimum size. Its efficiency is proved through the application in radial distribution systems.

• Journal of the Korean Society of Safety
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• v.26 no.6
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• pp.13-19
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• 2011

The purpose of this study is to examine the cause of damage to electrolytic capacitors and to present the heat generation mechanism in order to prevent the occurrence of similar problems. From the analysis results of electrolytic capacitors collected from accident sites, the fire causing area can be limited to the primary power supply for the initial accident. From the tests performed by applying overvoltage, surge, etc., it is thought that the fuse, varistor, etc., are not directly related to the accidents that occurred. The analysis of the characteristics using a switching regulator showed that the charge and discharge characteristics fell short of standard values. In addition, it is thought that heated electrolytic capacitors caused thermal stress to nearby resistances, elements, etc. It can be seen that the heat generation is governed by the over-ripple current, application of AC overvoltage, surge input, internal temperature increase, defective airtightness, etc. Therefore, when designing an electrolytic capacitor, it is necessary to comprehensively consider the correct polarity arrangement, appropriate voltage application, correct connection of equivalent series resistance(ESR) and equivalent series inductance(SEL), rapid charge and discharge control, sufficient margin of dielectric tangent, etc.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.8
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• pp.1887-1894
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• 2010

This paper proposes a new switched-capacitor sigma-delta modulator for automotive radars. Developed modulator is used to perform high-resolution analog-to-digital conversion (ADC) of high frequency band signal in a radar system. It has supply voltage of 2.7V, and has body-effect compensated switch configuration with low voltage and low distortion. The modulator has been implemented in a $0.25{\mu}m$ double-poly and triple-metal standard CMOS process, and it has die area of $1.9{\times}1.5mm^{2}$. It showed better total harmonic distortion of 20dB than the conventional bootstrapped circuit at the supply voltage of 2.7V.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.1798-1802
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• 2007

Adhesion strength of single layer ceramic capacitor sheet was measured using a peel testing system developed in this study. The peel test specimens with various dimensions were prepared from the ceramic sheet cast on the PET film. In peel test, the sheet specimen was adhered on the glass jig floating on the liquid media, which was designed to minimize the friction, and the specimen was then pulled up by micro-actuator. During the separation of the sheet from the PET film, peel force was measured. To normalize the testing condition, 3 different widths of the specimen were selected: 5, 10 and 20 mm. was used Furthermore, testing speed effect was investigated in this study. From the resullts using various testing conditions, the standard method for the peel strength testing may be suggested. Based on the testing condition, effect of peel angle on the strength was experimentally examined. It was found that the adhesive strength for the ceramic sheet is nearly identical, irrespective of the specimen width ranged from 5 to 20 mm, while the adhesive strength was increased with increasing testing speed. Furthermore, the strength was shown to be dependent on the peel angle.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.6
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• pp.274-278
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• 2005

Voltage transformer(VT) comparison measurement system is usually used for measurements of ratio error and phase angle error of VT made in industry. Both ratio error and phase angle error in VT are critically influenced by values of burden of VT used. External burden effects on both ratio error and phase angle error in VT are theoretically calculated. From the theoretical calculation, a method of evaluation for linearity of ratio error and phase angle error in VT measurement system have been developed using the standard capacitive burdens, with negligible dissipation factor less than 10$^{-4}$. These burden consists of five standard capacitors, with nominal capacitance of 1.1 $\mu$F, 1 $\mu$F, 0.1 $\mu$F, 0.01 $\mu$F, 0.001 $\mu$F. The developed method has been applied in VT measurement system of industry, showing in good consistency and linearity within 0.001 $\%$ between theoretical and measured values.

• Journal of the Korean Institute of Telematics and Electronics
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• v.5 no.3
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• pp.9-24
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• 1968

This report is concerned with the optimum design of hyper-aprupt p-n junctiea silion diode and fabriction of this diode usable for electrical tuning application. Impurity profile in the junction was assumed to clean exponential function. With this assunntion, an optimum criterion for designing standard AM radio tuning capacitor was derived. In the diffusion process, after aluminum and antimony as impurties were deposited in vacuum on a P-type silicon wafer, the diffusion was followed by loading the wafer into the high temperature furnace.