• Korean Journal of Materials Research
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• v.23 no.7
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• pp.385-391
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• 2013

The influence of Cu and Ni on the ductile-brittle transition behavior of metastable austenitic Fe-18Cr-10Mn-N alloys with N contents below 0.5 wt.% was investigated in terms of austenite stability and microstructure. All the metastable austenitic Fe-18Cr-10Mn-N alloys exhibited a ductile-brittle transition behavior by unusual low-temperature brittle fracture, irrespective of Cu and/or Ni addition, and deformation-induced martensitic transformation occasionally occurred during Charpy impact testing at lower temperatures due to reduced austenite stability resulting from insufficient N content. The formation of deformation-induced martensite substantially increased the ductile-brittle transition temperature(DBTT) by deteriorating low-temperature toughness because the martensite was more brittle than the parent austenite phase beyond the energy absorbed during transformation, and its volume fraction was too small. On the other hand, the Cu addition to the metastable austenitic Fe-18Cr-10Mn-N alloy increased DBTT because the presence of ${\delta}$-ferrite had a negative effect on low-temperature toughness. However, the combined addition of Cu and Ni to the metastable austenitic Fe-18Cr-10Mn-N alloy decreased DBTT, compared to the sole addtion of Ni or Cu. This could be explained by the fact that the combined addition of Cu and Ni largely enhanced austenite stability, and suppressed the formation of deformation-induced martensite and ${\delta}$-ferrite in conjunction with the beneficial effect of Cu which may increase stacking fault energy, so that it allows cross-slip to occur and thus reduces the planarity of the deformation mechanism.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.483-491
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• 2001

The recovery and recrystallization behavior of cold-rolled Zr-based alloys during isothermal annealing at temperatures from $575^{\circ}C$ to $650^{\circ}C$ was studied by thermoelectric power and Vickers microhardness measurement. The recovery and recrystallization resulted in the increase of TEP doe to the extinction of lattice defect, vacancy, dislocation and stacking fault during isothermal annealing after cold- rolling. The completion of recrystallization could be determined much clearly by TEP behavior than by microhardness change in Zr-based alloys. Especially, the recovery and recrystallization were classified separately by TEP behavior in Zr-0.4Nb-xSn alloys. From the analysis of TEP behavior and microhardness, the addition of Sn caused to form the interaction between stain field and dislocation, which resulted in the delay of recovery in Zr-based alloys. The precipitation due the addition of Nb suppressed the grain growth after recrystallization effectively in Zr-based alloys.

• Korean Journal of Metals and Materials
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• v.50 no.9
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• pp.645-651
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• 2012

This study investigated changes in phase fraction caused by the addition of Mo, as well as the subsequent behaviour of N and its effect on the mechanical properties of welded 24Cr-N duplex stainless steel weld metals. Filler metal was produced by fixing the contents of Cr, Ni, N, and Mn while adjusting the Mo content to 1.4, 2.5, 3.5 wt%. The delta ferrite fraction increased as the Mo content increased. In contrast, the ${\gamma}$ fraction decreased and changed from a round to an acicular shape. Secondary austenite (${\gamma}^{\prime}$) was observed in all specimens in a refined form, but it decreased as the Mo content increased to the extent that it was nearly impossible to find any secondary austenite at 3.5 wt% Mo. Both tensile and yield strengths increased with the addition of Mo. In contrast, the highest value of ductility was observed at 1.41 wt% Mo. At all temperatures, impact energy absorption showed the lowest value at 3.5 wt% Mo, at which the amount of ${\delta}$-ferrite was greatest. There was no significant temperature dependence of the impact energy absorption values for any of the specimens. As the fraction of ${\gamma}$ phase decreased, the amount of N stacked in the ${\gamma}$ phase increased. Consequently, the stacking fault energy decreased, while the hardness of ${\gamma}$ increased.

• Current Photovoltaic Research
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• v.8 no.4
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• pp.114-119
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• 2020

In this study, Mitigation of Potential-induced degradation (PID) for PERC solar cells using SiO2 Structure of ARC layer. The conventional PID test was conducted with a cell-level test based on the IEC-62804 test standard, but a copper PID test device was manufactured to increase the PID detection rate. The accelerated aging test was conducted by maintaining 96 hours with a potential difference of 1000 V at a temperature of 60℃. As a result, the PERC solar cell of SiO2-Free ARC structure decreased 22.11% compared to the initial efficiency, and the PERC solar cell of the Upper-SiO2 ARC structure decreased 30.78% of the initial efficiency and the PID reliability was not good. However, the PERC solar cell with the lower-SiO2 ARC structure reduced only 2.44%, effectively mitigating the degradation of PID. Na+ ions in the cover glass generate PID on the surface of the PERC solar cell. In order to prevent PID, the structure of SiNx and SiO2 thin films of the ARC layer is important. SiO2 thin film must be deposited on bottom of ARC layer and the surface of the PERC solar cell N-type emitter to prevent surface recombination and stacking fault defects of the PERC solar cell and mitigated PID degradation.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.4
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• pp.596-601
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• 2020

Silicon carbide is considered a potentially useful material for high-temperature electronic devices because of its large band gap energy and p-type or n-type conduction that can be controlled by impurity doping. Accordingly, the thermoelectric properties of -SiC powder prepared by refined diatomite were investigated for high value-added applications of natural diatomite. -SiC powder was synthesized by a carbothermal reduction of the SiO₂ in refined diatomite using carbon black. An acid-treatment process was then performed to eliminate the remaining impurities (Fe, Ca, etc.). n-Type semiconductors were fabricated by sintering the pressed powder at 2000℃ for 1~5h in an N2 atmosphere. The electrical conductivity increased with increasing sintering time, which might be due to an increase in carrier concentration and improvement in grain-to-grain connectivity. The carrier compensation effect caused by the remaining acceptor impurities (Al, etc.) in the obtained -SiC had a deleterious influence on the electrical conductivity. The absolute value of the Seebeck coefficient increased with increasing sintering time, which might be due to a decrease in the stacking fault density accompanied by grain or crystallite growth. On the other hand, the power factor, which reflects the thermoelectric conversion efficiency of the present work, was slightly lower than that of the porous SiC semiconductors fabricated by conventional high-purity -SiC powder, it can be stated that the thermoelectric properties could be improved further by precise control of an acid-treatment process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.4
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• pp.127-134
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• 2015

Aluminum nitride (AlN) single crystals have attracted much attention for a next-generation semiconductor application because of wide bandgap (6.2 eV), high thermal conductivity ($285W/m{\cdot}K$), high electrical resistivity (${\geq}10^{14}{\Omega}{\cdot}cm$), and high mechanical strength. The bulk AlN single crystals or thin film templates have been mainly grown by PVT (sublimation) method, flux method, solution growth method, and hydride vapor phase epitaxy (HVPE) method. Since AlN suffers difficulty in commercialization due to the defects that occur during single crystal growth, crystalline quality improvement via defects analyses is necessary. Etch pit density (EPD) analysis showed that the growth misorientations and the defects in the AlN surface exist. Transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD) analyses were employed to investigate the overall crystalline quality and various kinds of defects. TEM studies show that the morphology of the AlN is clearly influenced by stacking fault, dislocation, second phase, etc. In addition EBSD analysis also showed that the zinc blende polymorph of AlN exists as a growth defects resulting in dislocation initiator.

• Journal of the Korean Geophysical Society
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• v.2 no.1
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• pp.39-44
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• 1999

High-resolution images are drawn from existing seismic data which were originally obtained by Korea Ocean Research & Development Institute (KORDI) during 1994-1997 for deep seismic studies on the East Sea of Korea. These images are analyzed for mapping Quaternary faults and near-bottom gas pockets. First 12 channels are selected from shot gathers for reprocessing. The processing sequence adopted for high-resolution seismic images comprises data copy, trace editing, true amplitude recovery, common-midpoint sorting, initial muting, prestack deconvolution, bandpass filtering, stacking, highpass filtering, poststack deconvolution, f-x migration, and automatic gain control (AGC). Among these processing steps, predictive deconvolution, highpass filtering, and short window AGC are the most significant in enhancement of resolution. More than 200 Quaternanry faults are interpreted on the migrated sections in the shallow depths beneath the seafloor. Although numerous faults are found mostly at the western continental slope and boundaries of the Ulleung Basin, significant amount of the faults are also indicated within the basin. Many of these faults are believed to be formed with reactivation of basement, from geotectonic activities including volcanism, and often originated in Tertiary, indicating that the tectonic regime of the East Sea might be unstable. Existence of shallow gas pockets casts real hazardous warnings to deep-sea drillings and/or to underwater constructions such as inter-island cables and gas pipelines. On the other hand, discovery of these gas pockets heightens the interests in developing natural resources in the East Sea. Reprocessed seismic sections, however, show no typical seismic characteristics for gas hydrates such as bottom-simulating reflectors in the western continental slope and ocean floor.