• Journal of Power Electronics
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• 제19권6호
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• pp.1449-1457
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• 2019

This paper presents two voltage domain stacking topologies for powering integrated digital loads such as multiprocessors or 3D integrated circuits. Pairs of loads and capacitors are connected in series to form a stack of voltage domains. The voltage is balanced by switching the position of the capacitors in one case and the position of the loads in the other case. This method makes the voltage regulation robust to large differential load power consumption. The first configuration can be named the load stacking topology. The second configuration can be named the capacitor stacking topology. This paper aims at proposing and comparing these two topologies. Models of both topologies and a switching scheme are presented. The behavior, control scheme, losses and overall performance are analyzed and compared theoretically in simulation and experiments. Experimental results show that the capacitor stacking topology has better performance with a 30% voltage ripple reduction.

• 한국공작기계학회논문집
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• 제16권6호
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• pp.205-211
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• 2007

In this paper, foam-composite sandwich structures for EDM machine tool components such as column and column block designed by controlling stacking sequences and cross-sectional dimensions of the composite structures. The original column block is a box-shaped structure made of aluminum connecting a column and a Z-stage of the system. This research was focused on the design of efficient column block structure using a foam-composite sandwich structure which have good bending stiffness and damping characteristics to reduce the mass and increase damping ratio of the system. Vibration tests for getting damping ratio with respect to the stacking angle and thickness of the composites were carried out. Finite element analyses for static defection and vibration behaviour were also carried out to find out the appropriate stacking conditions; that is, stacking sequence and rib configuration. From the test and analysis results it was found that composite-foam sandwich structures for the microfactory system can be successful alternatives for high precision machining.

• Composites Research
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• 제19권2호
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• pp.13-19
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• 2006

본 논문에서는 미세 방전가공(Electrical Discharge Machining; EDM) 기계를 위한 샌드위치 구조를 설계하기 위해 복합재료의 적층 순서, 두께, 그리고 리브의 형상 등을 고려한 파라메트릭 연구를 수행하였다. 샌드위치 구조는 면재인 섬유강화 복합재료와 심재인 레진 콘크리트 및 고분자 포움으로 이루어졌다. 컬럼은 정적 굽힘강성과 비굽힘강성을 높이기 위해 십자 리브를 가진 형상으로 설계하였으며, 적층 순서와 두께를 조절하였다. 베드의 경우 양방향의 강성을 동시에 향상시키기 위해 적층 순서와 리브 형상을 조절하였다. 최적의 고강성을 얻기 위하여 리브의 두께와 면재의 두께 등 설계 파라메터의 최적치를 제안하였다. 각 설계 파라메터의 변화에 따른 구조의 정적, 동적 강성의 변화를 확인하기 위해 유한요소해석을 수행하였으며, 진동 실험을 통하여 각 요소의 고유진동수와 감쇠비를 측정하여 비교하였다. 이러한 결과로부터 고정밀 미세 방전가공 기계 구조를 위한 최적의 형상조건을 제안하였다.

• 지능정보연구
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• 제14권4호
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• pp.31-46
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• 2008

컨테이너 터미널의 장치장은 외부로부터 반입되거나 수입된 컨테이너가 수출을 위해 선박에 실리거나 외부로 반출 되기 전까지 임시로 머무는 공간이다. 선박에 컨테이너를 싣는 적하작업의 경우 싣는 순서가 사전에 결정되어 있기 때문에 장치장에 컨테이너가 잘못 쌓여있을 경우 다수의 재취급 작업이 발생하는 등 작업 효율에 좋지 못한 영향을 끼칠 수 있다. 장치장 재정돈이란 장치장 크레인의 유휴 시간을 활용하여 최대의 효율로 적하 작업을 할 수 있도록 장치장의 컨테이너들을 미리 재배치하는 작업을 말한다. 본 논문에서는 수직 배치 자동화 컨테이너 터미널 장치장을 대상으로 장치장 블록 내 재정돈 작업 계획을 수립하는 알고리즘을 제안한다. 제안된 알고리즘은 장치장 재정돈 작업계획을 목표 장치형태 결정 및 크레인 작업 계획의 2단계로 나누어 수립한다. 목표 장치형태 결정 단계에서는 적하시 작업 처리량이 최대가 될 수 있도록 탐색을 이용하여 재정돈 되어야 할 바람직한 장치형태를 결정하며, 크레인 작업 계획 단계에서는 원래의 장치형태에서 시작하여 목표 장치형태로 가능한 빠른 시간 내에 재정돈 작업을 수행할 수 있도록 크레인의 작업 스케쥴을 탐색을 이용하여 결정한다. 시뮬레이션 시스템을 이용하여 재정돈을 수행하기 전과후의 장치장에 대해 적하 작업 효율을 비교한 결과 재정돈 후 안벽 크레인의 대기 시간이 감소하고, 장치장의 재취급작업 수가 줄어드는 등 적하 작업 효율이 향상되는 것을 확인하였다.

• 한국전산구조공학회:학술대회논문집
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• 한국전산구조공학회 2003년도 봄 학술발표회 논문집
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• pp.127-133
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• 2003

In this study, a problem formulation and solution for design optimization of laminate composite cylindrical beam section is presented. The objective of this research is to determine the optimal dimension of the laminated composite cylindrical beam sections which has the equivalent flexural rigidities to those of the steel cylindrical beam sections. The analytical model is based on the laminate theory and accounts for the material coupling for arbitrary laminate stacking sequence configuration. The outer diameter and thickness of the beam are design variables. The solutions described are found using a global search algorithm, Genetic Algorithms (GA).

• Applied Microscopy
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• 제42권4호
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• pp.218-222
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• 2012

Modern aberration-corrected transmission electron microscope (TEM) with appropriate electron beam energy is able to achieve atomic resolution imaging of single and bilayer graphene sheets. Especially, atomic configuration of bilayer graphene with a rotation angle can be identified from the direct imaging and phase reconstructed imaging since atomic resolution Moir$\acute{e}$ pattern can be obtained successfully at atomic scale using an aberration-corrected TEM. This study boosts a reliable stacking order analysis, which is required for synthesized or artificially prepared multilayer graphene, and lets graphene researchers utilize the information of atomic configuration of stacked graphene layers readily.

• Journal of Communications and Networks
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• 제13권1호
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• pp.70-76
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• 2011

This paper presents the unified user equipment (UE) baseband modulation and demodulation (modem) hardware platform architecture to support multiple radio access technologies. In particular, this platform selectively supports two systems; one is HEDGE system, which is the combination of third generation partnership project (3GPP) Release 7 high speed packet access evolution (HSPA+) and global system for mobile communication (GSM)/general packet radio service (GPRS)/enhanced data rates for GSM evolution (EDGE), while the other is LEDGE system, which is the combination of 3GPP Release 8 long term evolution (LTE) and GSM/GPRS/EDGE. This is done by applying the flexible pin multiplexing scheme to a hardwired pin mapping process. On the other hand, to provide stable connection, high portability, and high debugging ability, the stacking structure is employed. Here, a layered board architecture grouped by functional classifications is applied instead of the conventional one flatten board. Based on this proposed configuration, we provide a framework for the verification step in wireless cellular communications. Also, modem function/scenario test and inter-operability test with various base station equipments are verified by system requirements and scenarios.

• 한국생산제조학회지
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• 제22권3호
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• pp.388-393
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• 2013

Carbon fiber reinforced plastic (CFRP) has many desirable qualities, including being lightweight and very strong. These characteristics have led to its use in applications ranging from small consumer products to vehicles. Circular and square CFRP members were fabricated using 8ply unidirectional prepreg sheets stacked at different angles ($[+15^{\circ}/-15^{\circ}]_4$, $[+45^{\circ}/-45^{\circ}]_4$ and $[90]_8$, where $0^{\circ}$ coincides with the axis of the member). Based on the collapse characteristics of a CFRP circular member, the collapse characteristics and energy absorption capability were analyzed. Impact collapse tests were carried out for each section member. In this study, the impact energies at crossheads speeds of 5.52 m/s, 5.14 m/s and 4.57 m/s were 611.52 J, 529.2 J and 419.44 J (circular member) 2.16 m/s, 1.85 m/s and 1.67 m/s are 372.4 J, 274.4 J and 223.44 J (square member). The purpose is to experimentally examine the absorption behavior and evaluation the strength in relation to changes in the stacking configuration when the CFRP circular members with different stacking configurations were exposed to various impact velocities. In addition, the dynamic characteristics were considered.

• 한국재료학회지
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• 제26권11호
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• pp.656-661
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• 2016

4H- and 6H-SiC grown by physical vapor transport method were investigated by transmission electron microscopy (TEM). From the TEM diffraction patterns observed along the [11-20] zone axis, 4H- and 6H-SiC were identified due to their additional diffraction spots, indicating atomic stacking sequences. However, identification was not possible in the [10-10] zone axis due to the absence of additional diffraction spots. Basal plane dislocations (BPDs) were investigated in the TEM specimen prepared along the [10-10] zone axis using the two-beam technique. BPDs were two Shockley partial dislocations with a stacking fault (SF) between them. Shockley partial BPDs arrayed along the [0001] growth direction were observed in the investigated 4H-SiC. This arrayed configuration of Shockley partial BPDs cannot be recognized from the plan view TEM with the [0001] zone axis. The evaluated distances between the two Shockley partial dislocations for the investigated samples were similar to the equilibrium distance, with values of several hundreds of nanometers or even values as large as over a few micrometers.

• 한국전기전자재료학회논문지
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• 제36권5호
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• pp.442-453
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• 2023

Tandem or multijunction solar cells (MJSCs) can convert sunlight into electricity with higher efficiency (η) than single junction solar cells (SJSCs) by dividing the solar irradiance over sub-cells having distinct bandgaps. The efficiencies of various common SJSC materials are close to the edge of their theoretical efficiency and hence there is a tremendous growing interest in utilizing the tandem/multijunction technique. Recently, III-V materials integration on a silicon substrate has been broadly investigated in the development of III-V on Si tandem solar cells. Numerous growth techniques such as heteroepitaxial growth, wafer bonding, and mechanical stacking are crucial for better understanding of high-quality III-V epitaxial layers on Si. As the choice of growth method and substrate selection can significantly impact the quality and performance of the resulting tandem cell and the terminal configuration exhibit a vital role in the overall proficiency. Parallel and Series-connected configurations have been studied, each with its advantage and disadvantages depending on the application and cell configuration. The optimization of both growth mechanisms and terminal configurations is necessary to further improve efficiency and lessen the cost of III-V on Si tandem solar cells. In this review article, we present an overview of the growth mechanisms and terminal configurations with the areas of research that are crucial for the commercialization of III-V on Si tandem solar cells.