• Journal of the Korea Society of Computer and Information
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• v.21 no.4
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• pp.1-8
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• 2016

In small embedded systems including IoT devices, memory size is very small and it is important to reduce memory amount for execution of application programs. For multi-threaded applications, stack may consume a large amount of memory because each thread has its own stack of sufficiently large size for worst case. This paper presents an implementation of single stack multi-threading, called SSThread (Single Stack Thread), by sharing a stack for all threads to reduce stack memory size. By using SSThread, multi-threaded applications can be programmed based on normal C language environment and there is no requirement of transporting multi-threading operating systems. It consists of several library functions and various C macro definitions. Even though some functional restrictions in comparison to operating systems supporting complete multi-thread functionalities, it is very useful for small embedded systems with tiny memory size and it is simple to setup programming environment for multi-thread applications.

• IEMEK Journal of Embedded Systems and Applications
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• v.12 no.3
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• pp.159-167
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• 2017

Software safety is a key issue in embedded system of automotive and aviation industries. Various software testing approaches have been proposed to achieve software safety like ISO26262 Part 6 in automotive environment. In spite of one of the classic and basic approaches, stack memory is hard to estimating exactly because of uncertainty of target code generated by compiler and complex nested interrupt. In this paper, we propose an approach of analyzing the maximum stack usage statically from target binary code rather than the source code that also allows nested interrupts for determining the exact stack memory size. In our approach, determining maximum stack usage is divided into three steps: data extraction from ELF file, construction of call graph, and consideration of nested interrupt configurations for determining required stack size from the ISR (Interrupt Service Routine). Experimental results of the estimation of the maximum stack usage shows proposed approach is helpful for optimizing stack memory size and checking the stability of the program in the embedded system that especially supports nested interrupts.

• Journal of KIISE:Computer Systems and Theory
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• v.35 no.1
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• pp.53-59
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• 2008

In spite of increasing complexity of wireless sensor network applications, most of the sensor node platforms still have severe resource constraints. Especially a small amount of memory and absence of a memory management unit (MMU) cause many problems in managing application thread stacks. Hence, a shared-stack was proposed, which allows several threads to share one single stack for minimizing the amount of memory wasted by fixed-size stacks. In this paper, we present the memory usage models for thread stacks by deriving the overflow probability of the fixed-size stack and the shared-stack and also show that the shared-stack is more reliable than the fixed-size stack.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.61-67
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• 2020

This paper is to propose a hybrid memory adaptor using next-generation nonvolatile memory devices such as phase-change memory to improve the performance limitations of OpenStack-based object storage systems. The proposed system aims to improve the performance of the account and container servers for object metadata management. For this, the proposed system consists of locality-based dynamic page buffer, write buffer, and nonvolatile memory modules. Experimental results show that the proposed system improves the hit rate by 5.5% compared to the conventional system.

• IEMEK Journal of Embedded Systems and Applications
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• v.9 no.4
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• pp.205-210
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• 2014

Cache based live migration method utilizes a cache, which is accessible to both side (remote and local), to reduce the virtual machine migration time, by transferring only irredundant data. However, address space layout randomization (ASLR) is proved to reduce the memory duplicate ratio between targeted migration memory and the migration cache. In this pager, we analyzed the behavior of ASLR to find out how it changes the physical memory contents of virtual machines. We found that among six virtual memory regions, only the modification to stack influences the page-level memory duplicate ratio. Experiments showed that: (1) the ASLR does not shift the heap region in sub-page level; (2) the stack reduces the duplicate page size among VMs which performed input replay around 40MB, when ASLR was enabled; (3) the size of memory pages, which can be reconstructed from the fresh booted up state, also reduces by about 60MB by ASLR. With those observations, when applying cache-based migration method, we can omit the stack region. While for other five regions, even a coarse page-level redundancy data detecting method can figure out most of the duplicate memory contents.

• Journal of KIISE:Computing Practices and Letters
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• v.14 no.1
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• pp.71-75
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• 2008

Many sensor operating systems have memory limitation constraint; therefore, stack memory areas of threads resides in a single memory space. Because most target platforms do not have hardware MMY (Memory Management Unit), it is difficult to protect each stack area. The method to solve this problem is to exchange original stack handling instructions in binary code for wrapper routines to protect stack area. In this exchanging phase, instruction corruption problem occurs due to difference of each instruction length between stack handling instructions and branch instructions. In this paper, we propose the algorithm to call a target routine without instruction corruption problem. This algorithm can reach a target routine by repeating branch instructions to have a short range. Our solution makes it easy to apply security patch and maintain upgrade of software of sensor node.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.772-775
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• 2004

After Morris' Internet Worm in 1988, the stack buffer overflow hacking became generally known to hackers and it has been used to attack systems and servers very frequently. Recently, many researches tried to prevent it, and several solutions were developed such as Libsafe and StackGuard; however, these solutions have a few problems. In this paper we present a new stack buffer overflow attack prevention technique that uses the system call monitoring mechanism and memory address where the system call is made.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.911-913
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• 2008

In this work, nonvolatile memory (NVM) devices for system on panel of flat panel display (FPD) were fabricated using low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology with an oxide-nitride-oxynitride (ONOn) stack structure on glass. The results demonstrate that the NVM devices fabricated using the ONOn stack structure on glass have suitable switching characteristics for data storage with a low operating voltage, a threshold voltage window of more than 1.8 V between the programming and erasing (P/E) states after 10 years and its initial threshold voltage window (${\Delta}V_{TH}$) after $10^5$ P/E cycles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.3
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• pp.226-232
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• 2023

As a potential alternative to flash memory, HfO₂/Al₂O₃ stacks appear to be a viable option as charge capture layers in charge trapping memories. The paper undertakes a review of HfO₂/Al₂O₃ stacks as charge trapping layers, with a focus on comparing the number, thickness, and post-deposition heat treatment and γ-ray and white x-ray treatment of such stacks. Compared to a single HfO₂ layer, the memory window of the 5-layered stack increased by 152.4% after O₂ annealing at ±12 V. The memory window enlarged with the increase in number of layers in the stack and the increase in the Al/Hf content in the stack. Furthermore, our comparison of the treatment of HfO₂/Al₂O₃ stacks with varying annealing temperatures revealed that an increased annealing temperature resulted in a wider storage window. The samples treated with O₂ and subjected to various γ radiation intensities displayed superior resistance. and the memory window increased to 12.6 V at ±16 V for 100 kGy radiation intensity compared to the untreated samples. It has also been established that increasing doses of white x-rays induced a greater number of deep defects. The optimization of stacking layers along with post-deposition treatment condition can play significant role in extending the memory window.

• Applied Chemistry for Engineering
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• v.16 no.6
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• pp.853-856
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• 2005

Inductively coupled plasma reactive ion etching of magnetic tunnel junction (MTJ) stack, which is one of the key elements in magnetic random access memory, was studied. The MTJ stacks were patterned in nanometer size by electron(e)-beam lithography, and TiN thin films were employed as a hard mask. The etch process of TiN hard mask was examined using Ar, $Cl_2/Ar$, and $SF_6/Ar$. The TiN hard mask patterned by e-beam lithography was first etched and then the etching of MTJ stack was performed. The MTJ stacks were etched using Ar, $Cl_2/Ar$, and $BCl_3/Ar$ gases by varying gas concentration and pressure.