• Title/Summary/Keyword: Stack Protection

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Characteristics of Rainfall Protection for Stacks (굴뚝의 우수유입방지 특성)

  • Kim, Jong-Chul;Kim, Tae-Hyeung
    • Journal of Korean Society of Occupational and Environmental Hygiene
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    • v.10 no.1
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    • pp.18-31
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    • 2000
  • A stack must be designed to 1) reduce or eliminate rainfall or snowfall into a industrial exhaust system, 2) minimize a resistance to flow, 3) maximize the vertical dispersion of the contaminated air and 4) minimize maintenance. The weather cone stacks and the elbow-type stacks are very popular in Korea. But they add some resistance to the exhaust system resulting in reduction of air flow rate, but also deflect the noxious contaminants downward in undiluted form. To solve these problems, ACGIH (American Conference of Governmental Industrial Hygienists) suggested the vertical discharge stack with concentric space between the upper stack with larger diameter and the lower stack with smaller diameter. The preliminary test showed that the vertical discharge stacks did not have the good rainfall protection. The reversed cone were newly devised to satisfy the requirements for the good stack. Subsequently, the amount of rain being penetrated through the stacks was measured while the stacks were simultaneously and naturally exposed to rain in the same area outside. Test results indicate that none of the stacks tested completely exclude rain. The efficiency of rainfall protection and the pressure loss coefficient were compared. The temporary conclusion was reached to the point that the reversed cone stack is the best one. Further research is underway.

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A Study on PMOS Embedded ESD Protection circuit with Improved Robustness for High Voltage Applications. (향상된 감내특성을 갖는 PMOS 삽입형 고전압용 ESD 보호회로에 관한 연구)

  • Park, Jong-Joon
    • Journal of IKEEE
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    • v.21 no.3
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    • pp.234-239
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    • 2017
  • In this paper, we propose an ESD (Electrostatic Discharge) protection circuit based on a new structure of SCR (Silicon Controlled Rectifier) embedded with PMOS structure. The proposed ESD protection circuit has a built-in PMOS structure and has a latch-up immunity characteristic and an improved tolerance characteristic. To verify the characteristics of the proposed ESD protection circuit and to analyze its operating characteristics, we compared and analyzed the characteristics of the existing ESD protection circuit using TCAD simulation. Simulation results show that the proposed protection ESD protection circuit has superior latch-up immunity characteristics like the existing SCR-based ESD protection device HHVSCR (High Holding Voltage SCR). Also, according to the results of the HBM (Human Body Model) maximum temperature test, the proposed ESD protection circuit has a maximum temperature value of 355K, which is about 20K lower than the existing HHVSCR 373K. In addition, the proposed ESD protection circuit with improved electrical characteristics is designed by applying N-STACK technology. As a result of the simulation, the proposed ESD protection circuit has a holding voltage characteristic of 2.5V in a single structure, and the holding voltage increased to 2-STACK 4.2V, 3-STACK 6.3V, 4-STACK 9.1V.

Design of ESD Protection Circuit with improved Snapback characteristics Using Stack Structure (스텍 구조를 이용한 향상된 스냅백 특성을 갖는 ESD 보호회로 설계)

  • Song, Bo-Bae;Lee, Jea-Hack;Kim, Byung-Soo;Kim, Dong-Sun;Hwang, Tae-Ho
    • Journal of IKEEE
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    • v.25 no.2
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    • pp.280-284
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    • 2021
  • In this paper, a new ESD protection circuit is proposed to improve the snapback characteristics. The proposed a new structure ESD protection circuit applying the conventional SCR structural change and stack structure. The electrical characteristics of the structure using penta-well and double trigger were analyzed, and the trigger voltage and holding voltage were improved by applying the stack structure. The electron current and total current flow were analyzed through the TCAD simulation. The characteristics of the latch-up immunity and excellent snapback characteristics were confirmed. The electrical characteristics of the proposed ESD protection circuit were analyzed through HBM modeling after forming a structure through TCAD simulator.

A Study on LVTSCR-Based N-Stack ESD Protection Device with Improved Electrical Characteristics (향상된 전기적 특성을 지닌 LVTSCR 기반의 N-Stack ESD 보호소자에 관한 연구)

  • Jin, Seung-Hoo;Woo, Je-Wook;Joung, Jang-Han;Koo, Yong-Seo
    • Journal of IKEEE
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    • v.25 no.1
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    • pp.168-173
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    • 2021
  • In this paper, we propose a new structure of ESD protection device that achieves improved electrical characteristics through structural change of LVTSCR, which is a general ESD protection device. In addition, it applies N-Stack technology for optimized design in the ESD Design Window according to the required voltage application. The N-Well area additionally inserted in the existing LVTSCR structure provides an additional ESD discharge path by electrically connecting to the anode, which improves on-resistance and temperature characteristics. In addition, the short trigger path has a lower trigger voltage than the existing LVTSCR, so it has excellent snapback characteristics. In addition, Synopsys' T-CAD Simulator was used to verify the electrical characteristics of the proposed ESD protection device.

A Study on SCR-Based ESD Protection Device with Improved Robustness Using Stack Technology (Stack 기술을 이용한 향상된 감내 특성을 갖는 SCR 기반 ESD 보호 소자에 관한 연구)

  • Kwak, Jae-Chang
    • Journal of IKEEE
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    • v.23 no.3
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    • pp.1015-1019
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    • 2019
  • In this paper, a new ESD protection device is proposed to improve the trigger voltage and robustness. The HHVSCR and the proposed device were compared to verify the trigger voltage, the holding voltage and the robustness. The gate length was modified to verify the electrical characteristics. The trigger voltage, the holding voltage and the robustness were certified by comparing the proposed device and the stacking structure.

A Study on ESD Protection Circuit for 2-Stack Structure Design Based on LVTSCR (LVTSCR 기반의 2-Stack 구조 설계를 위한 ESD 보호회로에 관한 연구)

  • Seo, Jeong-Yun;Do, Kyoung-Il;Chae, Hee-Guk;Seo, Jeong-Ju;Koo, Yong-Seo
    • Journal of IKEEE
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    • v.22 no.3
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    • pp.836-841
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    • 2018
  • In this paper, This paper is based on the conventional ESD protection circuits SCR and LVTSCR. Also, the SCR-based ESD protection circuit, which is different from the conventional structure, is presented and tested for variations in the trigger voltage and holding voltage. Due to the insertion of additional N +, P + regions, the newly added SCR-based protection circuit have improved electrical characteristics. To discuss the electrical characteristics of the proposed circuit, Synopsys T-CAD simulation data was shown.

The Influence of Zoning at Shafts of Super-tall Buildings on the Stack Effect and Stairwell Pressurization (초고층건물 샤프트의 수직구획이 연돌효과 및 급기가압 성능에 미치는 영향)

  • Kim, Beom-Kyue;Kim, Hak-Jung;Yeo, Yong-Ju;Leem, Chae-Hyun;Park, Yong-Hwan
    • Fire Science and Engineering
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    • v.26 no.5
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    • pp.92-98
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    • 2012
  • This study analyzed the effect of zoning on the distribution of pressure differentials caused by stack effect and air pressurization in a center core type of 80 story super-tall building. The results showed that maximum pressure difference more than 250 Pa can be generated by stack effect without zoning. Zoning of stairwell only resulted in 10 Pa reduction of maximum pressure difference, however, zoning of both stairwell and EV shaft especially at the same floor revealed 50 % reduction in stack effect. It was also analysed that the minimum required air flow rate occurred when the stairwell temperature reached 50 % of temperature difference between indoor and outdoor.

Influences of Coatings and Solution Corrosivity on Cathodic Protection of Metallic Materials

  • Yoo, Y.R.;Chang, H.Y.;Jin, T.E.;Kim, Y.S.
    • Corrosion Science and Technology
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    • v.5 no.3
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    • pp.106-111
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    • 2006
  • Painting has protected metallic stack but the paint films may be degraded and corrosion problem can be arisen. To protect the painted metal stack, cathodic protection can be applied. If cathodic protection is applied to bare metal, only small area may be protected. However, if cathodic protection is applied to painted metal surface, large area can be protected and the lifetime of paint films can be extended. High corrosion resistant alloys were corroded at a Flue Gas Desulfurization (FGD) facility of power plant within a short period and thus cathodic protection can be used to protect these metals. On the base of computer simulation, if cathodic protection is applied to bare metal in a FGD environment, it was estimated that applied current could almost be spent to protect area near the anode. However, if cathodic protection is applied to high resistant-coated metal, the much larger area from the anode could be effectively protected.

A Study on ESD Protection Circuit with High Holding Voltage with Parallel PNP and N+ difrt inserted (Parallel PNP 및 N+ drift가 삽입된 높은 홀딩전압특성을 갖는 ESD보호회로에 관한 연구)

  • Kwak, Jae-Chang
    • Journal of IKEEE
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    • v.24 no.3
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    • pp.890-894
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    • 2020
  • In this paper, we propose an ESD protection device with improved electrical characteristics through structural changes of LVTSCR, a typical ESD protection device. The proposed ESD protection device has a higher holding voltage than the existing LVTSCR by inserting a long N+ drift region and additional P-Well and N-Well, and improves the latch-up immunity, a chronic disadvantage of a general SCR-based ESD protection device. In addition, the effective base width of parasitic BJTs was set as a design variable, and the electrical characteristics of the proposed ESD protection device were verified through Synopsys' TCAD simulation so that it can be applied to the required application by applying the N-Stack technology.

A Study on Performance Improvement Measures of Pressurized Smoke Control Systems for Exit Passageways of High-Rise Buildings (고층건축물의 피난경로 가압제연시스템 성능개선대책에 관한 연구)

  • Son, Bong-Sae;Kim, Jin-Soo
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.21 no.12
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    • pp.703-714
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    • 2009
  • One of the biggest problems in smoke control systems for high-rise buildings is stack effect, but there are no recognized methods or measures to solve the problem of stack effect as yet. The stack effect can be overcome by forming the uprising current inside the stair hall properly, but there is a limit to the height in supplying into the stair hall the smoke control air volume to be supplied to a floor in case of escape from fire. The limit to the height can be extended by over-coming the stack effect by pressurizing the stair hall and the ancillary room simultaneously. It can also be anticipated that the stack effect can be overcome by connecting the air supply shaft to the stair hall at the top. As a result of computer simulations using a network type of tool, it is found that adequate performance can be achieved by pressurizing the stair hall only for a building of 190m or less, and up to 360m when pressurizing the stair hall and the ancillary room simultaneously. In all those cases, however, an overpressure venting damper is required which operates within a suitable range for venting the overpressure outside.