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http://dx.doi.org/10.7471/ikeee.2021.25.1.168

A Study on LVTSCR-Based N-Stack ESD Protection Device with Improved Electrical Characteristics  

Jin, Seung-Hoo (Dept. of Electronics Engineering, Dankook University)
Woo, Je-Wook (Dept. of Electronics Engineering, Dankook University)
Joung, Jang-Han (Dept. of Electronics Engineering, Dankook University)
Koo, Yong-Seo (Dept. of Electronics Engineering, Dankook University)
Publication Information
Journal of IKEEE / v.25, no.1, 2021 , pp. 168-173 More about this Journal
Abstract
In this paper, we propose a new structure of ESD protection device that achieves improved electrical characteristics through structural change of LVTSCR, which is a general ESD protection device. In addition, it applies N-Stack technology for optimized design in the ESD Design Window according to the required voltage application. The N-Well area additionally inserted in the existing LVTSCR structure provides an additional ESD discharge path by electrically connecting to the anode, which improves on-resistance and temperature characteristics. In addition, the short trigger path has a lower trigger voltage than the existing LVTSCR, so it has excellent snapback characteristics. In addition, Synopsys' T-CAD Simulator was used to verify the electrical characteristics of the proposed ESD protection device.
Keywords
ESD; LVTSCR; Trigger Voltage; Holding Voltage; N-Stack;
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