• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.21-21
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• 2010

(Ba,Sr)$TiO_3$ (BST) thin film with a perovskite structure has potential for the practical application in various functional devices such as nonvolatile-memory components, capacitor, gate insulator of thin-film transistors, and electro-optic devices for display. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below $600^{\circ}C$. For the purpose of integrating BST thin film directly into a Si-based read-out integrated circuit (ROIC), it is necessary to process the BST film below $400^{\circ}C$. The microstructural and electrical properties of low-temperature crystallized BST film were studied. The BST thin films have been fabricated at $350^{\circ}C$ by UV-assisted rapidly thermal annealing (RTA). The BST films are in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss, low leakage current density, and high breakdown voltage. Photoexcitation of the organics contained in the sol-gel-derived films by high-intensity UV irradiation facilitates elimination of the organics and formation of the single-crystalline phase films at low temperatures. The amorphous BST thin film was transformed to a highly (h00)-oriented perovskite structure by high oxygen pressure processing (HOPP) at as low as $350^{\circ}C$. The dielectric properties of BST film were comparable to (or even better than) those of the conventionally processed BST films prepared by sputtering or post-annealing at temperature above $600^{\circ}C$. When external pressure was applied to the well-known contractive BST system during annealing, the nucleation energy barrier was reduced; correspondingly, the crystallization temperature decreased. The UV-assisted RTA and HOPP, as compatible with existing MOS technology, let the BST films be integrated into radio-frequency circuit and mixed-signal integrated circuit below the critical temperature of $400^{\circ}C$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1429-1435
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• 2004

In this work, high performance broadband amplifier MMIC including all the matching and biasing components, and electrostatic discharge (ESD) protection circuit was developed for K/Ka band applications. Therefore, external biasing or matching components were not required for the operation of the MMIC. STO (SrTiO3) capacitors were employed to integrate the DC biasing components on the MMIC, and miniaturized LC parallel ESD protection circuit was integrated on MMIC, which increased ESD breakdown voltage from 10 to 300 V. A pre-matching technique and RC parallel circuit were used for the broadband design of the amplifier MMIC. The amplifier MMIC exhibited good RF performances and good stability in a wide frequency range. The chip size of the MMICs was $1.7{\pm}0.8$ mm2.

• Journal of Navigation and Port Research
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• v.27 no.2
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• pp.217-221
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• 2003

In this work, we used a novel RF-CSP to develop a broadband amplifier MMIC, including all the matching and biasing components, for Ku and K band applications. By utilizing an ACF for the RF-CSP, the fabrication process for the packaged amplifier MMIC could be simplified and made cost effective. STO (SrTiO$_3$) capacitors were employed to integrate the DC biasing components on the MMIC. A pre-matching technique was used for the gate input and drain output of the FETs to achieve a broadband design for the amplifier MMIC. The amplifier CSP MMIC exhibited good RF performance (Gain of 12.5$\pm$1.5 dB, return loss less than -6 dB, PldB of 18.5$\pm$1.5 dBm) over a wide frequency range. This work is the first report of a fully integrated CSP amplifier MMIC successfully operating in the Ku/K band.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.63-69
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• 1999

The electrical properties of rf-magnetron sputtered $Ba_{0.5}Sr_{0.3}TiO_3$ (BST) capacitors were investigated by varying annealing temperature and atmosphere of the rapid thermal annealing (RTA). The electrical properties of Pt/BST/Pt capacitors were found to strongly depend on the RTA condition. It seems that the dependence of the electrical properties of the Pt/BST/Pt capacitors on the RTA condition is related to the oxygen vacancies in BST thin films. In order to clarify the relation between the oxygen vacancies and the electrical properties of Pt/BST/Pt capacitors, we have examined the two different annealing methods. One annealing method was performed in $O_2$ gas and the other was done in $O_2$-plasma at the same condition of 450$^{\circ}C$, 20 mtorr. It was found that the leakage current densities of $O_2$-plasma annealed capacitor were much lower than those of $O_2$ annealed capacitor. The dielectric constants of $O_2$ annealed capacitor decreased about 14% comparing with those of as-deposited. In contrast, there was no decrease in the dielectric constant of $O_2$-plasma annealed. These results indicate that $O_2$-plasma annealing is very effective in compensation the oxygen vacancies in BST thin films. It can be also concluded that the oxygen vacancies greatly affect the electrical properties of Pt/BST/Pt capacitors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.106-109
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• 2005

The $(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75[$\AA$/min]. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The capacitance characteristics had a stable value within ${\pm}4$[%] in temperature ranges of -80~+90[$^{\circ}C$].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.160-161
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• 2005

The $(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75$[{\AA}/min]$. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.718-721
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• 2004

The $(Sr_{0.9}Ca_{0.1})TiO_3$(SCT) thin films are deposited on Pt-coated electrode$(Pt/TiN/SiO_2/Si)$ using RF sputtering method at various substrate temperature. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$. The crystallinity of SCT thin films were increased with increase of substrate temperature in the temperature range of $100\sim500[^{\circ}C]$. The dielectric constant of SCT thin films were increased with the increase of substrate temperature, and changed almost linearly in temperature ranges of $-80\sim+190[^{\circ}C]$. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the substrate temperature increases.

• International Journal of Internet, Broadcasting and Communication
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• v.7 no.1
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• pp.75-92
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• 2015

This paper presents the application of the bond valence method to estimate the valence charge distribution in several perovskite systems: $La_{{\tilde{1}}x}Pb_xMnO_3$ (x=0.1-0.5), $La_{0.6}Sr_{0.{\tilde{4}}x}Ti_xMnO_3$ (x=0.0-0.25) and $La_{{\tilde{1}}x}Sr_xCoO_3$ (x=0.1-0.5); the reviewing of their crystal structures is also incorporated. The results showed the failure of the elastic bonding mechanism in all studied systems and revealed the general deficit of the valence charge in their unit cells. This valence deficit was not associated with the structural defects and was not equally localized in all coordination spheres. As the content of substitution increased, the charge deficit declined systematically from balanced level, signifying the transfer of valence charge from the ${\tilde{B}}O_6$ to ${\tilde{A}}O_{12}$ spheres. This transfer depended on the valence deviation of spheres and the average reached near 2 electron per unit cell. The possible impact of the limitted accuracy of the available structural data on the bond valence results has also been considered.

• Journal of Electrical Engineering and Technology
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• v.4 no.4
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• pp.527-530
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• 2009

$(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$(=BSCT) powders, prepared by the sol-gel method, were doped using $MnCO_3$ as the acceptor and $Dy_2O_3$ as the donor. This powder was mixed with an organic vehicle. BSCT thick films were fabricated by the screen-printing techniques on the alumina substrate. The structural and dielectric properties of BSCT thick films were investigated with variation of the $Dy_2O_3$ amount. As a result of the differential thermal analysis (DTA), the exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All the BSCT thick films showed the XRD patterns of a typical polycrystalline perovskite structure. The average grain size of BSCT thick films decreased with an increasing amount of $Dy_2O_3$. The relative dielectric constant and dielectric loss of the BSCT thick film doped $Dy_2O_3$ 0.1mol% were 4637.4 and 1.6% at 1kHz, respectively.

• Progress in Superconductivity
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• v.3 no.2
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• pp.163-167
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• 2002

We have fabricated planar-type single-layer second-order high-Tc SQUID gradiometers. The devices consisted of symmetrically designed three parallel-connected square pickup loops that were directly coupled to the SQUID. $YBa_2$$Cu_3$$O_{7}$ film was deposited on $SrTiO_3$ substrate by a PLD system and patterned into a device by the photolithography with ion milling technique. Junctions of the SQUID were either step-edge or bicrystal type. All the structures were formed on a 10 mm $\times$ 5 mm substrate. Balancing of the gradiometer was achieved by adjusting the width of the central pickup loop. The gradiometer noise was measured both inside and outside a magnetically shielded room. Details of the results will be discussed.