• 제목/요약/키워드: Sputtering conditions

검색결과 692건 처리시간 0.03초

직류 마그네트론 스퍼터링 공정 중 타겟 오염에 따른 박막 및 계면 형성 특성 (Interlayer Formation During the Reactive DC Magnetron Sputtering Process)

  • 이진영;허민;이재옥;강우석
    • 반도체디스플레이기술학회지
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    • 제18권1호
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    • pp.1-4
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    • 2019
  • Reactive sputtering is widely used because of its high deposition rate and high step coverage. The deposition layer is often affected by target poisoning because the target conditions are changed, as well, by reactive gases during the initial stage of sputtering process. The reactive gas affects the deposition rate and process stability (target poisoning), and it also leads unintended oxide interlayer formation. Although the target poisoning mechanism has been well known, little attention has been paid on understanding the interlayer formation during the reactive sputtering. In this research, we studied the interlayer formation during the reactive sputtering. A DC magnetron sputtering process is carried out to deposit an aluminum oxide film on a silicon wafer. From the real-time process monitoring and material analysis, the target poisoning phenomena changes the reactive gas balance at the initial stage, and affects the interlayer formation during the reactive sputtering process.

리튬 이차전지에서 Si 음극박막의 스퍼터링 증착조건에 따르는 구조적, 전기화학적 특성 연구 (Influence of Sputtering Conditions on Structural and Electrochemical Properties of the Si Anode Film for Lithium Secondary Batteries)

  • 주승현;이성래;조병원;조원일
    • 한국재료학회지
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    • 제19권2호
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    • pp.73-78
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    • 2009
  • This study investigated the dependence of the various sputtering conditions (Ar pressure: $2{\sim}10\;mTorr$, Power: $50{\sim}150\;W$) and thickness ($50{\sim}1200\;nm$) of Si thin film on the electrochemical properties, microstructural properties and the capacity fading of a Si thin film anode. A Si layer and a Ti buffer layer were deposited on Copper foil by RF-magnetron sputtering. At 10 mTorr, the 50 W sample showed the best capacity of 3323 mAh/g, while the 100 W sample showed the best capacity retention of 91.7%, also at 10 mTorr. The initial capacities and capacity retention in the samples apart from the 50W sample at 10 mTorr were enhanced as the Ar pressure and power increased. This was considered to be related to the change of the microstructure and the surface morphology by various sputtering conditions. In addition, thinner Si film anodes showed better cycling performance. This phenomenon is caused by the structural stress and peeling off of the Si layer by the high volume change of Si during the charge/discharge process.

어닐링 조건이 RF Magnetron sputtering을 이용하여 증착된 undoped ZnO 박막의 결정 및 광학특성에 미치는 영향 (The effect of annealing conditions on the structural and optical properties of undoped ZnO thin films prepared by RF Magnetron sputtering)

  • 박형식;유정열;윤의중
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.423-423
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    • 2007
  • In this study, the effects of annealing conditions on the structural and optical properties of ZnO films were investigated. ZnO oxide (ZnO) films were deposited onto $SiO_2$/Si substrates by RF magnetron sputtering from a ZnO target. The substrate was not heated during deposition. ZnO films were annealed in temperature ranges of $500{\sim}650^{\circ}C$ in the $O_2$ flow for 5 ~ 20 min. The film average thicknesses were in the range of 291 nm. The surface morphologies and structures of the samples were characterized by SEM and XRD, respectively. The optical properties were evaluated by PL measurement at room temperature using a He-Cd 325 nm laser. According to the results, the optimal annealing conditions for the best photoluminescence (PL) characteristics were found to be oxygen fraction, ($O_2/O_2+Ar$) of 20%, RF power of 240W, substrate temperature of RT (room temperature), annealing condition of $600^{\circ}C$ for 20 min, and sputtering pressure of 20 mTorr. The obtained wavelength of light emission was found at 379 nm (ultraviolet-UV region). However, the optimal parameters for the best PL characteristics of ZnO thin films were not consistent with those obtained from the (002) intensities of XRD analyses. As a result, XRD pattern was not considered as the key issue concerning the intensity of PL of ZnO thin film. The intensity of the emitted UV light will correspond to the grain size of ZnO film.

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직류 마그네트론 시스템에서 방전 및 스파터링 특성 (The Characteristic of Discharge and Sputtering on the DC Magnetron System)

  • 곽영순;조정수;박정후;김광화;우봉주
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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    • pp.173-175
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    • 1990
  • A dc magnetron system for cathode sputtering with a spool-shaped cathode is described. The sputtering conditions are discussed concerning pressure, magnetic field and discharge current.

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스퍼터링 조건에 따른 PZT 박막의 특성에 관한 연구 (The properties of PZT thin film at various sputtering condition)

  • 김홍주;박영;정규원;박기엽;송준태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.997-1000
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    • 2001
  • Pb(Zr$\sub$0.52/Ti$\sub$0.48/)O$_3$(PZT) thin films have been prepared by rf-magnetron sputtering methods and investigated the structural and electrical properties. In order to investigate the effects of sputtering conditions, input power was controlled during deposition. Crystallization process and microstructure of PZT thin films were largely affected by input power. Highly crystallized PZT films with the perovskite structure were successfully obtained on Pt/Ti bottom electrode. The dielectric constants and polarization of PZT thin films were increased with increasing input power, and the coercive electric field was decreased with increasing input power . The dielectric constant of PZT thin films with input power 150 W was 966 at 1 kHz. we, authors, proposed that preferred orientation of PZT thin films were controlled by input power in sputtering methods.

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스퍼터링법으로 제조한 타이타늄 박막의 전기적 및 구조적 특성 (Electrical and structural properties of Ti thin films by sputtering)

  • 김영준;박종윤;정운조;박계춘;이진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.694-698
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    • 2002
  • Ti films were deposited onto $100{\times}100$ mm alumina substrates using dc magnetron sputtering under the following conditions; substrate temperature of R.T. ${\sim}400^{\circ}C$, annealing temperature of $100{\sim}400^{\circ}C$ and sputtering gas pressure of $1.3{\sim}3.0{\times}10^{-2}$ Torr. And the films were examined by X-ray diffraction analysis (XRD), scanning electron microscopy(SEM) and 4-point measurement system. The best electrical and structural properties obtained by substrate temperature of ${\sim}200^{\circ}C$, target-substrate distance of ~14 cm and sputtering pressure of $1.3{\sim}1.7{\times}10^{-2}$ Torr. Also at that condition the most excellent adhesion was observed.

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다구찌 기법을 이용한 FIB-Sputtering 가공 특성 분석 (Analysis on FIB-Sputtering Process using Taguchi Method)

  • 이석우;최병열;강은구;홍원표;최헌종
    • 한국공작기계학회논문집
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    • 제15권6호
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    • pp.71-75
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    • 2006
  • The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its usage in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. The target of this paper is the analysis of FIB sputtering process according to tilt angle, dwell time and overlap for application of 3D micro and pattern fabrication and to find the effective beam scanning conditions using Taguchi method. Therefore we make the conclusions that tilt angle is dominant parameter for sputtering yield. Burr size is reduced as tilt angle is higher.

고주파 마그네트론 스퍼터링으로 제조한 SiO$_2$ 절연박막의 구조분석 및 절연저항에 관한 연구 (Insulation Properties and Microstructure of SiO$_2$ Film Prepared by rf Magnetron Sputtering)

  • 박태순;이성래
    • 한국표면공학회지
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    • 제35권2호
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    • pp.113-121
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    • 2002
  • We have investigated insulating properties of $SiO_2$ interlayer for the thin film strain gauge, which were prepared by RF magnetron sputtering method in various deposition conditions, such as Ar pressure, gas flow rates and sputtering gases. SEM, AFM and FT-IR techniques were used to analyze its structures and composition. As the Ar pressure and the flow rate increased, the insulating interlayer showed low insulating resistance due to its porous structure and defects. Oxygen deficiency in $SiO_2$ was decreased as fabricated by hydrogen reactive sputtering. We could enhance the surface mobility of sputtered adatoms by using Ar/$H_2$ sputtering gas and obtain a good surface roughness and insulating property. The optimum insulating resistance of 9.22 G$\Omega$ was obtained in Ar/30% $H_2$ mixed gas, flow rate 10sccm, and 1mTorr.

A real-time X-ray scattering study of sputtering growth of TiN films

  • J.H.Je;Noh, D.Y.;Kim, H.K.;K.S.Liang
    • 한국진공학회지
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    • 제4권S1호
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    • pp.97-101
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    • 1995
  • We report the results of a real-time synchrotron x-ray scattering study of the growth of TiN thin films on Si(001) substrates by RF sputtering. Our experiemnts show that the morphology of the TiN films strongly depends on growth conditions. After the nucleation and growth takes place with random crystallographic orientation at the very early stage, the films grow with a preferred orientation. Such preferred orientation was found to depend on both the sputtering power and the carrier gases used in the sputtering. Generally, the final morphology assumes either(111) or (002) crystallographic orientation. Using Ar sputtering, a cross-over effect from(002) to (111) was observed at intermediate time. The nature of the observed morphological changes is discussed.

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