• 한국표면공학회지
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• 제25권5호
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• pp.223-233
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• 1992

(Ti, Al)N films were deposited on 304 stainless steel by D.C. magnetron sputtering using Al target and Ti plate. The properties of (Ti, Al)N films such as composition, microhardness, grain size, crystal structure were investigated. The chemical composition of (Ti, Al)N films was similar to the sputter area ratio of titanium to aluminum target by means of EDS and AES survey. The higher bias voltage to substrate and the smaller input of N2 gas showedthe increased microhardness and the finer grain size of the films. The results obtained from this study show, it is belived, that the (Ti, Al)N film by D.C.magne-tron sputtering is promising in the wear resistance use.

• 한국진공학회지
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• 제15권5호
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• pp.451-457
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• 2006

벌집형 양극 셀 구조를 가지는 스퍼터 이온펌프를 제작하여 그 성능을 측정하고 기존의 원통형 구조와 비교하였다. 원통형 구조는 원통과 원통 사이에 기체의 이온화에 크게 기여하지 못하는 공간(dead space)이 전체의 10 % 정도 존재하는데, 벌집형 구조에서는 이러한 공간이 없으므로 이론적으로는 배기성능 또한 최대 10 % 정도 향상될 것으로 예측된다. 이러한 점에 착안하여 본 연구에서는 원통형 및 벌집형 셀 구조의 스퍼터 이온펌프를 제작하여 배기성능을 측정하여 서로 비교하였다. 그 결과 벌집형 구조가 원통형 구조에 비해 압력 구간에 따라서 $5%{\sim}11%$ 정도 배기속도가 높은 것으로 나타났다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.103-105
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• 2001

ZnO thin films on glass substrate were deposited by RF sputter with various $Ar/O_2$ gas ratio. Crystallinities, surface morphologies, and electrical properties of the films were investigated by XRD(x-ray diffractometer), and SEM (scanning electron microscopy) analyses. The facing targets sputtering system can deposit thin film at plasma free condition and change the deposition condition in wide range. We suggested that a very suitable $Ar/O_2$ gas of ratio should be 50/50 for preparation of high quality ZnO films with good C-axis orientation.

• 한국세라믹학회지
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• 제30권7호
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• pp.578-588
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• 1993

Highly c-axis oriented ferroelectric PbTiO3 thin films were deposited on MgO single crystal substrates by RF magnetron sputtering. We have studied the effects of substrate temperature, RF input power, gas comosition, gas pressure and deposition rate on the chemical and structural characteristics of PbTiO3 thin films. The epitaxy relationship of c-axis oriented films was found to be PbTiO3{100}//MgO(100) and their microstructures were highly mosaic. It was found that the most important parameter to achieve epitaxial PbTiO3 films was the substrate temperature. The activation energy for the epitaxy formation was about 0.92eV. Lower gas pressure and RF input power were favorable for the formation of epitaxial c-axis orientation. It was also found that the optimum oxygen content in Ar gas was 10% to obtain the stoichiometric PbTiO3 composition.

• 한국표면공학회지
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• 제32권3호
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• pp.307-311
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• 1999

The well-crystalline hydroxyapatite($Ca_{10}(PO_4)_6(OH)_2$ ; HAp) layer having a biocompatibility was successfully coated onto titanium substrate using a radio-frequency magnetron sputtering, and effects of sputtering gas and the thickness of HAp film on a crystal growth of the HAp layers were investigated. The deposition rate of the layer sputtered with water-vapour gas was slower than that of the layer sputtered with argon gas. The results of X-ray diffraction demonstrated that the about $0.8\mu\textrm{m}$ thick HAp film under water-vapour gas was an amorphous phase, the about $1.2\mu\textrm{m}$ thick film was (100) plane-oriented HAp, and the about $1.5\mu\textrm{m}$ thick film was (001)plane-oriented HAp. FT-IR analysis proved that hydroxyl group of the layer sputtered with argon gas was defected, but that of the layer sputtered with water-vapour gas was not defected. From these results, it was favorable to use water-vapour gas on the HAp coatings onto metal surface.

• 한국결정성장학회지
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• 제12권6호
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• pp.283-287
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• 2002

초고집적 반도체 회로에서 Cu를 배선으로 쓰이기 위한 Cu 금속과 Si 기판사이의 확산방지막으로써 Zr(Si)N 박막을 연구하였다. Zr(Si)N 박막증착은 DC magnetron sputter으로 $Ar/N_2$의 혼합 gas를 사용한 reactive sputtering 방법을 이용하였다. 상온에서 ZrN 박막 증착시 Ar gas와 NE gas 비율이 48 : 2일 때 가장 낮은 비저항값을 가졌으며, 증착시 기판의 온도의 증가에 따라서 비저항값이 낮아졌다. 비저항값이 감소된 ZrN 박막일수록 (002)면의 방향성을 갖는 결정이 성장되었다. ZrN 박막의 Cu 확산방지 특성은 ZrN 박막에 Si을 첨가함으로써 개선될 수 있으며 지나치게 첨가될 경우에는 오히려 확산방지 특성이 감소되었다. 접착력 특성에서는 ZrN에 Si의 함유량이 증가함에 파라 개선되었다. 증착막의 특성은 XRD, 광학 현미경, scretch tester 그리고 $\alpha$-step 등을 사용하여 분석하였다.

• 한국전기전자재료학회논문지
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• 제27권9호
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• pp.589-593
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• 2014

AlNO multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. $Al_2O_3$/AlNO(LMVF)/AlNO(HMVF)/Al/substrate of 4 multi-layer has been prepared in an Ar and ($N_2+O_2$) gas mixture, and $Al_2O_3$ of top layer is anti-reflection layer on double AlNO(LMVF)/AlNO(HMVF) layers and Al metal of infrared reflection layer. In this study, the roughness and surface properties of AlNO thin films were estimated by field emission scanning electron microscopy(FE-SEM). The grain size of AlNO thin films increased with increasing sputtering power. The composition of thin films has been systematically investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200~1,500 nm. The absorptance of AlNO films shows the increasing trend with swelling ($N_2+O_2$) gas mixture in HMVF and LMVF deposition. The excellent optical performance showed above 98% of absorptance in visible wavelength region.

• 열처리공학회지
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• 제24권3호
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• pp.140-143
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• 2011

In this work, Ga doped ZnO (GZO) films were prepared by radio frequency (RF) magnetron sputtering without intentional substrate heating on glass substrate and then the effect of the intense electron irradiation on structural and electrical properties and the NOx gas sensitivity were investigated. Although as deposited GZO films showed a diffraction peak for ZnO (002) in the XRD pattern, GZO films that electron irradiated at electron energy of 900 eV showed the higher intense diffraction peaks than that of the as deposited GZO films. The electrical property of the films are also influenced with electron's energy. As deposited GZO films showed the three times higher resistivity than that of the films irradiated at 900 eV In addition, the sensitivity for NOx gas is also increased with electron irradiation energy and the film sensor showed the proportionally increased gas sensitivity with NOx concentration. This approach is promising in gaining improvement in the performance of thin film gas sensors used for the detection of hazard gas phase.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.186-186
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• 2015

We have introduced multifunctional ITO single thin films formed by normal sputtering system equipped with a plasma limiter which effectively blocks the bombardment of energetic negative oxygen ions. MFSS ITO also possesses high gas diffusion barrier properties simultaneously low resistivity even it deposited at room temperature without post annealing on plastic substrate. Nano-crystalline enhancement by Ar energy has energy window from 20 to 30 eV under blocking NOI condition. Effect of blocking NOI and optimal Ar energy window enhancement facilitate that resistivity is minimized to $3.61{\times}10^{-4}{\Omega}cm$ and the WVTR of 100 nm thick MFSS ITO is $3.9{\times}10^{-3}g/(m^2day)$ which is measured under environmental conditions of 90% relative humidity and 50oC that corresponds to a value of ${\sim}10^{-5}g/(m^2day)$ at room temperature. The multifunctional MFSS ITO with low resistivity, and low gas permeability will be highly valuable for plastic electronics applications.

• 센서학회지
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• 제19권1호
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• pp.58-61
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• 2010

This paper describes the fabrication and characteristics of NO sensor using ZnO thin film by RF magnetron sputter system. The sensitivity, working temperature, and response time of sputtered pure ZnO thin film and added catalysts such as Pt, Pd, Al, Ti on those films were measured and analyzed. The sensitivity of pure ZnO thin film at working temperature of $300^{\circ}C$ is 0.875 in NO gas concentration of 0.046 ppm. At same volume of the gas in chamber, measuring sensitivity of 1.87 at $250^{\circ}C$ was the case of Pt/ZnO thin film. The ZnO thin films added with catalyst materials were showed higher sensitivity, lower working temperature and faster adsorption characteristics to NO gas than pure ZnO thin film.