• Title/Summary/Keyword: Spreading devices

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Efficiency of Model Oil Fences for One Vessel Using a Physical Experiment and Numerical Calculation (모형 실험과 수치 해석을 통한 단선용 모형 오일펜스의 성능 해석)

  • Kim, Tae-Ho;Jang, Duck-Jong;Yang, Kyung-Uk;Na, Sun-Chol;Kim, Dae-An
    • Korean Journal of Fisheries and Aquatic Sciences
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    • v.41 no.2
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    • pp.140-149
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    • 2008
  • This study evaluated the efficiency of an oil fence and spreading devices for one vessel in a towing tank. A series of model experiments and numerical calculations were conducted using an existing oil fence for two vessels and a new method for one vessel. Models of the oil fence and spreading devices were constructed on $1/20^{th}$ scale from waterproofed nylon fabric and canvas. The tensions acting on the model of the oil fences and the horizontal distance between the spreading devices were calculated numerically while the oil fences were being towed. The results were extremely close to the results of the model experiments. The ratio of the opening width to the total length of the oil fence, which shows the efficiency of the oil fence for one vessel, was 49.7% in 0.4 m/sec. Therefore, the proposed oil fence system should be very useful for oil containment at sea. As the opening width of the oil fence is not proportional to the length of the towing rope, it may be reasonable to maintain the towing rope at approximately 100 m. Furthermore, a reasonable towing speed, when operating the oil fence for one vessel equipped with spreading devices, was within 0.4 m/sec.

Charge Spreading Effect of Stored Charge on Retention Characteristics in SONOS NAND Flash Memory Devices

  • Kim, Seong-Hyeon;Yang, Seung-Dong;Kim, Jin-Seop;Jeong, Jun-Kyo;Lee, Hi-Deok;Lee, Ga-Won
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.4
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    • pp.183-186
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    • 2015
  • This research investigates the impact of charge spreading on the data retention of three-dimensional (3D) silicon-oxide-nitride-oxide-silicon (SONOS) flash memory where the charge trapping layer is shared along the cell string. In order to do so, this study conducts an electrical analysis of the planar SONOS test pattern where the silicon nitride charge storage layer is not isolated but extends beyond the gate electrode. Experimental results from the test pattern show larger retention loss in the devices with extended storage layers compared to isolated devices. This retention degradation is thought to be the result of an additional charge spreading through the extended silicon nitride layer along the width of the memory cell, which should be improved for the successful 3-D application of SONOS flash devices.

Design and Performance Evaluation of Complex Spreading CDMA Systems for Improving Multiple Access Efficiency (다중 접속 효율 향상을 위한 Complex Spreading CDMA 시스템 설계와 성능 평가)

  • An, Changyoung;Ryu, Heung-Gyoon
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.41 no.11
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    • pp.1349-1355
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    • 2016
  • It should guarantee high reliability and ultra low latency communication. Additionally, it should support connection between massive devices. As one of estimated scenarios for 5G mobile communication, mobile devices and sensors using low data rate wireless communication will increase. For communication of these devices, single-carrier system can be considered. In order to satisfy these requirements, in this paper, we propose CDMA (Code Division Multiple Access) system using complex spreading and Multi-level BPSK(Binary Phase Shift Keying). The proposed system spread transmit symbol by using chip code consisted of real and imaginary number. As simulation results, we can confirm that although the proposed system has 3dB lower BER (Bit Error Rate) performance than conventional CDMA system, the proposed system can support 2 times more users in comparison with conventional CDMA system.

CFD simulation of cleaning nanometer-sized particulate contaminants using high-speed injection of micron droplets (초고속 미세 액적 충돌을 이용한 나노미터 크기 입자상 오염물질의 세정에 대한 CFD 시뮬레이션)

  • Jinhyo, Park;Jeonggeon, Kim;Seungwook, Lee;Donggeun, Lee
    • Particle and aerosol research
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    • v.18 no.4
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    • pp.129-136
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    • 2022
  • The line width of circuits in semiconductor devices continues to decrease down to a few nanometers. Since nanoparticles attached to the patterned wafer surface may cause malfunction of the devices, it is crucial to remove the contaminant nanoparticles. Physical cleaning that utilizes momentum of liquid for detaching solid nanoparticles has recently been tested in place of the conventional chemical method. Dropwise impaction has been employed to increase the removal efficiency with expectation of more efficient momentum exchange. To date, most of relevant studies have been focused on drop spreading behavior on a horizontal surface in terms of maximum spreading diameters and average spreading velocity of drop. More important is the local liquid velocity at the position of nanoparticle, very near the surface, rather than the vertical average value. In addition, there are very scarce existing studies dealing with microdroplet impaction that may be desirable for minimizing pattern demage of the wafer. In this study, we investigated the local velocity distribution in spreading liquid film under various impaction conditions through the CFD simulation. Combining the numerical results with the particle removal model, we estimated an effective cleaning diameter (ECD), which is a measure of the particle removal capacity of a single drop, and presented the predicted ECD data as a function of droplet's velocity and diameter particularly when the droplets are microns in diameter.

The Comparison Of Acupuncture Sensation Index Among Three Different Acupuncture Devices - Double-blind and Randomized Controlled Trial Method - (3개 침제조회사 침구(鍼具)에 대한 침감지표 비교 - 이중 맹검 무작위 배정법 -)

  • Lim, Seong-chul;Seo, Jung-chul;Kim, Kyung-un;Seo, Bo-myung;Kim, Sung-woong;Lee, Se-youn;Jung, Tae-young;Han, Sang-won;Lee, Hyun
    • Journal of Acupuncture Research
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    • v.21 no.6
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    • pp.209-219
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    • 2004
  • Objective : This study was designed to compare acupuncture sensation index among three different acupuncture devices. Methods : A, B and C acupuncture devices were inserted into Quchi(LI 11) of the subjects. After 5 minutes the subjects completed a questionnaire rating the intensity of 21 kinds of acupuncture sensation; hurting, penetrating, sharp, aching, intense, spreading, radiating, tingling, pricking, stinging, pulling, heavy, dull, numb, electric, shocking, hot, burning, cool, pulsing, and throbbing. We compared subjective evaluations of acupuncture sensation among the groups. Results : The acupuncture sensation index when administrated among three different acupuncture devices(A, B and C) was not significantly different. The acupuncture sensation of B acupuncture devices showed significant difference than A or C in Spreading, Dull, Numb item. But, the other items of acupuncture sensation were not significantly different among three acupuncture devices. Conclusions : We found that acupuncture sensation index when administrated among three different acupuncture devices. Further study is needed to know different acupuncture sensation among acupuncture devices.

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A Failure Analysis of SLS Polysilicon TFT Devices for Enhanced Performances (SLS 다결정 실리콘 TFT 소자의 불량분석에 관한 연구)

  • 오재영;김동환;박정호;박원규
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.11
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    • pp.969-975
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    • 2002
  • Thin film transistors(TFT) were made based on the polycrystalline Si (poly-Si) crystallized by sequential lateral solidification(SLS) method. The electrical characteristics of the devices were analyzed. n-type TFTs did not show a superior characteristics compared to p-type TFTs. We analyzed the causes of the failure by focused ion beam(FIB) analysis and automatic spreading resistance(ASR) measurement, to study the structural integrity and the doping distribution, respectively. FIB showed no structural problems but it revealed a non-intermixed layer in the contact holes between the polysilicon and the aluminum electrode. ASR analyses on poly-Si layer with various doping concentrations and activation temperatures showed that the inadequately doped areas were partially responsible for the inferior behavior of the whole device.

An Advanced Model of on-Resistance for Low Voltage VDMOS Devices (저전압 VDMOS의 ON-저항 모델)

  • 김일중;김성동;최연익;한민구
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.3
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    • pp.267-273
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    • 1992
  • An advanced on-resistance model of VDMOS devices in the low voltage regimes is proposed and verified by 2-D device simulations. The model considers the lateral gaussian doping profiles in the channel region and exact current spreading angles in the epitaxial layer for both linear and cellular geometries by employing the conformal mapping, It is found out that the on-resistance of low voltage VDMOS may be overestimated considerably if it is analyzed by the conventional method. The 2-D device simulation results show that the proposed model is valid for the VDMOS devices in the low voltage regimes.

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Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy

  • Hagmann, Mark J.;Mousa, Marwan S.;Yarotski, Dmitry A.
    • Applied Microscopy
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    • v.47 no.3
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    • pp.95-100
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    • 2017
  • High resolution measurements of the carrier profile in semiconductor devices is required as the semiconductor industry progresses from the 10-nm lithography node to 7-nm and beyond. We examine the factors which determine the resolution of the present method of scanning spreading resistance microscopy as well as such factors for the newer method of scanning frequency comb microscopy that is now under development. Also, for the first time, we consider the sensitivity of both methods to the location of heterogeneities in the semiconductor. In addition, mesoscopic effects on these measurements are considered for the first time. Two simple analytical models are extended to study the sensitivity to heterogeneities as well as mesoscopic effects.

Electrical Characterization of Electronic Materials Using FIB-assisted Nanomanipulators

  • Roh, Jae-Hong;You, Yil-Hwan;Ahn, Jae-Pyeong;Hwang, Jinha
    • Applied Microscopy
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    • v.42 no.4
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    • pp.223-227
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    • 2012
  • Focused Ion Beam (FIB) systems have incorporated versatile nanomanipulators with inherent sophisticated machining capability to characterize the electrical properties of highly miniature components of electronic devices. Carbon fibers were chosen as a model system to test the applicability of nanomanipulators to microscale electronic materials, with special emphasis on the direct current current-voltage characterizations in terms of electrode configuration. The presence of contact resistance affects the electrical characterization. This resistance originates from either i) the so-called "spreading resistance" due to the geometrical constriction near the electrode - material interface or ii) resistive surface layers. An appropriate electrode strategy is proposed herein for the use of FIB-based manipulators.

Use of Blockchain to Support the Security of Internet of Things: A Review

  • Saher Un Nisa;Maryam Khalid
    • International Journal of Computer Science & Network Security
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    • v.23 no.7
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    • pp.149-154
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    • 2023
  • Internet of Things (IoT) is now spreading everywhere. It's the technology of every person's need so we can't step back from IoT but we can secure it as it is spreading quickly so it has greater chances of danger and being misused. There is an urgent need to make IoT devices secure from getting cracked or hacked. A lot of methods had tried and still trying to mitigate IoT security issues. In this paper Blockchain is going to be the solution of most of the IoT issues or problems. We have discussed or highlighted security issues with centralized IoT and then provided solution of such security challenges through the use of blockchain because is based on a decentralized technology that is hard to modify or update.