• 제목/요약/키워드: Spin on-Glass

검색결과 208건 처리시간 0.025초

내열 내식용 Cr-Al반강자성계 스핀밸브막의 거대자기저항 효과 (Giant Magnetoresistance of Antiferromagnetic Cr-Al based Multilayer Spin-Valve with Anti-Corrosion and Thermal Stability)

  • 김병수;이성훈;이찬규
    • 한국자기학회지
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    • 제8권6호
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    • pp.362-368
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    • 1998
  • 반강자성 Cr86Al14계 스핀밸브막의 자기특성과 내열 내식성에 대해 연구하엿다. Cr86Al14스핀밸브막의 자기적성질은 강자성층, 자성층 및 비자성층두께에 의존하였으며, glass/Cr86Al14(600$\AA$)/Ni81Fe19(50$\AA$)/Cu(40$\AA$)/Ni81Fe19(40$\AA$)구조에서의 교환결합자장(Hex)은 20 Oe, 자기저항비(MR ratio (%))는 2%를 나타내었다. Cr96Al14 및 Fe50Mn50 스핀밸브막은 annealing온도가 증가함에 따라 모두 Hex 및 MR비가 감소하는 경향을 나타내엇으나 FeMn막에 비해 CrAl막이 우수하여, FeMn막은 15$0^{\circ}C$, CrAl막은 25$0^{\circ}C$에서 Hex 및 MR비값을 상실하였다. 또한 가혹한 환경에서의 스핀밸브막의 부식저항성을 평가하고자 35$^{\circ}C$,90% 습도상태의 챔버내에서 Hex와 MR비값의 변화를 관찰한 결과 CrAl막의 경우에는 Hex 및 MR비 값이 시간이 경과해는 변화지 않았으나, FeMn막은 15일정도 경과하자 거의 상실하는 결과를 나타냈다. SEM관찰결과 FeMn막은 pitting이 나타났으며 15일정도 경과후에는 박리가 발생하였다.

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스핀코팅법에 의해 제조되어진 Yttrium이 도핑된 ZnO 막의 특성 (Characterization of Yttrium Doped Zinc Oxide Thin Films Fabricated by Spin-coating Method)

  • 김현주;이동윤;송재성
    • 한국전기전자재료학회논문지
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    • 제19권5호
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    • pp.457-460
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    • 2006
  • Y doped zinc oxide (YZO) thin films were deposited on F doped $SnO_2$ (FTO) glass substrate by sol-gel method using the spin-coating system. A homogeneous and stable solution was prepared by dissolving acetate in the solution added diethanolamine as sol-gel stabilizer. YZO films were obtained after preheated on the hot-plate for 5minute before each coating; the number of coating was 3 times. After the coating of last step, annealing of YZO films performed at $450^{\circ}C$ for 30 minute. In order to confirming of a ultraviolet ray interruption and down-conversion effects, optical properties of YZO films, transmission spectrum and fluorescent spectrum were used. Also, for understanding the obtained results by experiment, the elestronic state of YZO was calculated using the density functional theory The results obtained by experiment were compared with calculated structure. The detail of electronic structure was obtained by the discrete variational Xa (DV-Xa) method, which is a sort of molecular orbital full potential method. The density of state and energy levels of dopant element were shown and discussed in association with optical properties.

전도성 고분자가 코팅된 탄소 나노튜브 투명전극의 특성 분석 (Characterization of Transparent Electrodes using Carbon Nanotubes Coated by Conductive Polymers)

  • 김부종;한상훈;박진석
    • 반도체디스플레이기술학회지
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    • 제13권1호
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    • pp.19-25
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    • 2014
  • This study demonstrates transparent electrodes with characteristics desirable for touch screen panels using carbon nanotubes (CNTs). This has been accomplished by depositing CNTs on glass substrates via spray coating and then depositing thin conductive polymer films on the CNTs via spin coating. For all of the samples, such as CNTs, conductive polymers, and polymer-coated CNTs, the surface morphologies, sheet resistances, visible transmittances, chromatic properties are characterized as functions of their preparation conditions, such as the spray times for CNTs and the spin speeds for conductive polymers. The experimental results confirm that only the polymer-coated CNTs can satisfy all of the requirements that are required for electrodes of touch screen panels, such as the sheet resistance lower than $100{\Omega}/sq$, the visible transmittance higher than 80 %, and the yellowness smaller than 1.

Spin-coating법에 의한 $TiO_2$의 광촉매 효율 (Photocatalytic Efficiency of $TiO_2$Thin Films by Spin-coating)

  • 김범준;변동진;이중기;박달근
    • 한국재료학회지
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    • 제10권4호
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    • pp.264-269
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    • 2000
  • $TiO_2$sol(30wt%, anatase)을 이용하여 스핀코팅으로 유리기판에 $TiO_2$박막을 제조하였다. 박막의 두께는 코팅주기의 횟수가 조절하였다. 한 코팅주기는 스핀코팅, 건조, 열처리를 포함한다. 박막의 반응성은 막 위에서의 자외선강도가 0.44와 2.mW/$\textrm{cm}^2$인 조건에서 벤젠기체의 광분해 속도를 통해 조사하였다. 박막의 두께가 증가할수록 표면적으로 증가로 인해 반응성은 증가하였으며, 0.44mW/$\textrm{cm}^2$일 때 4$\mu\textrm{m}$정도 이상의 두께에서 반응성은 더 이상 증가되지 않았다. porous한 $TiO_2$박막은 비교적 넓은 유효표면적을 가지고 있으며, 그것은 비교적 높은 자외선 강도하에서 박막두께에 따라 반응속도를 증가시키는 결과를 낳았다.

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스핀코팅법으로 제작한 산화아연/산화구리 이종접합의 정류 및 일산화질소 가스 감지 특성 (Rectifying and Nitrogen Monoxide Gas Sensing Properties of a Spin-Coated ZnO/CuO Heterojunction)

  • 황현정;김효진
    • 한국재료학회지
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    • 제26권2호
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    • pp.84-89
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    • 2016
  • We present the rectifying and nitrogen monoxide (NO) gas sensing properties of an oxide semiconductor heterostructure composed of n-type zinc oxide (ZnO) and p-type copper oxide thin layers. A CuO thin layer was first formed on an indium-tin-oxide-coated glass substrate by sol-gel spin coating method using copper acetate monohydrate and diethanolamine as precursors; then, to form a p-n oxide heterostructure, a ZnO thin layer was spin-coated on the CuO layer using copper zinc dihydrate and diethanolamine. The crystalline structures and microstructures of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy. The observed current-voltage characteristics of the p-n oxide heterostructure showed a non-linear diode-like rectifying behavior at various temperatures ranging from room temperature to $200^{\circ}C$. When the spin-coated ZnO/CuO heterojunction was exposed to the acceptor gas NO in dry air, a significant increase in the forward diode current of the p-n junction was observed. It was found that the NO gas response of the ZnO/CuO heterostructure exhibited a maximum value at an operating temperature as low as $100^{\circ}C$ and increased gradually with increasing of the NO gas concentration up to 30 ppm. The experimental results indicate that the spin-coated ZnO/CuO heterojunction structure has significant potential applications for gas sensors and other oxide electronics.

Al-doped ZnO via Sol-Gel Spin-coating as a Transparent Conducting Thin Film

  • Nam, Gil-Mo;Kwon, Myoung-Seok
    • Journal of Information Display
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    • 제10권1호
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    • pp.24-27
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    • 2009
  • A simple nonalkoxide sol-gel route for depositing an Al-doped ZnO thin film on a glass substrate was derived in this study. The initial Al dopant concentration in the sol-gel preparation varied and ranged from 0 to 5%. The sol-gel-derived thin films showed c-plane preferred crystallization of their hexagonal phase, with nanosized grain structures. First and second post-heat-treatments were carried out to improve the film’s electrical resistivity. The carrier density and the Hall mobility were measured and discussed to explain the electrical resistivity. The optical transmittance within the visible range showed compatible properties, which indicates the possible use of A1-doped ZnO as a transparent electrode in flat panel displays.

The Substitution Effect of Boron on Reentrant Behavior of Rapidly Solidified FeMnZr Alloys

  • Moon, Y.M;Kim, K.S;Yu, S.C;Srinivas, V
    • Journal of Magnetics
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    • 제9권4호
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    • pp.113-115
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    • 2004
  • The magnetization properties have been measured for amorphous $Fe_{82}Mn_{8-x}B_xZr_{10}$ (x = 0-8) alloys. The temperature dependence of magnetization for these alloys shows the existence of antiferromagnetic couplings between Fe atoms in low fields at low temperatures. The magnetic parameters, obtained from the magnetization behavior are consistent with the presence of mixed magnetic state. The Curie temperature and magnetic moment increased with an increase of the concentration of B and spin glass like transition observed at low temperature decreases and finally vanishes at x = 8 at %. Our result suggests that the substitution of B for Mn seems to cause an increase of magnetic order.

Fe-Cr-Ni 합금의 저온에서의 자기적 성질에 관한 연구 (A Study on the low temperature magnetic properties of Fe-Cr-Ni alloys)

  • 안병덕;김진옥;장경호;송기영
    • 한국자기학회지
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    • 제3권4호
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    • pp.277-283
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    • 1993
  • 세개의 오스테 나이트계의 Fe-Cr-Ni 스테인레스 합금강들의 DC 자화율의 온도의존성을 4.2-300 K 온도영역에서 측정하였다. 측정결과 두개의 합금강들은 two-magnetic-phase 모델(spin glass와 초상자성)을 만족하였으며 나머지 하나는 자기적 2중 천이현상을 나타내었다. 또한 Ni/Cr의 비가 증가할수록 자화율의 최 대값이 증가하고 이 값을 나타내는 온도는 감소하였다.

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ITO 기판 위의 PLZT 박막의 전기 및 광학 특성에 관한 연구 (A Study on Electrical and Optical Characteristics of PLZT Thin Films Deposited on ITO-glass)

  • 강종윤;최형욱;백동수;박용욱;박창엽
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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    • pp.39-42
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    • 1995
  • In this study, PLZT thin films prepared by Sol-Gel method were deposited on ITO glass by spin coating and cryatallized at 750$^{\circ}C$ for 5 min by RTA in oreder to investigate their electrical and optical properties. Although thin film experieneced narrowing their hysteresis loops with increasing La content, E$\sub$c/ and P.sub r/ were higher for thin film than for bulk materials. $\varepsilon$$\sub$r/ and optical transmittance increased with increasing La content.

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ITO 기판에 제작된 PLZT 박막의 소성온도에 따른 특성 (Annealing-temperature Dependent Characteristics of PLZT Thin Films on ITO Coated Glass)

  • 최형욱;장낙원;박창엽
    • 한국전기전자재료학회논문지
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    • 제11권2호
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    • pp.128-132
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    • 1998
  • 2/65/35 PLZT stock solution prepared by Sol-Gel processing was spin-coated on ITO coated glass and annealed by RTA(Rapid Thermal Annealing). The crystal structure of films was reported based on the observation of crystallization process and microstructure of the film fabricated at different fabrication condition. Films were crystallized into rhombohedral structure by annealing at $750^{\circ}C$ for 5 min. As the annealing temperature increased, the size of rosette structure of the films was grown up from $2.4{\mu}m$ to $15{\mu}m$, dielectric constant was increased, coercive field was decreased 33.82 kV/cm, remnant polarization was increased to 39.84 ${\mu}C/cm^2$ and Optical transmittance was decreased.

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