• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.133-134
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• 2006

A simple doping method to fabricate a very thin channel body of the n-type fin field-effect-transistor (FinFET) with a 20 nm gate length by solid-phase-diffusion (SPD) process is presented. Using As-doped spin-on-glass as a diffusion source of arsenic and the rapid thermal annealing, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. Single channel and multi-channel n-type FinFET devices with a gate length of 20-100 nm was fabricated by As-SPD and revealed superior device scalability.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.79-83
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• 2011

White phosphorescence polymer light emitting diodes (WPhPLEDs) with a glass/ITO/PEDOT:PSS/PFO:$Ir(ppy)_3$:MDMO-PPV/TPBI/LiF/Al structure were fabricated to investigate the effects of $Ir(ppy)_3$ doping concentrations on the optical and electrical properties of the devices. PFO, $Ir(ppy)_3$ and MDMO-PPV conjugated polymers as host and guest materials in the emission layer were spin coated at various concentrations of $Ir(ppy)_3$ ranging from 0.0 to 20.0 vol.%. As the concentration of $Ir(ppy)_3$ increased from 5.0 to 20.0 vol.%, the luminance and current efficiency values of the devices decreased clearly, which are attributable to the quenching effect at a high doping concentration. The maximum luminance and current density were 2850 $cd/m^2$ and 741 $mA/cm^2$, respectively for a WPhPLED with an $Ir(ppy)_3$ concentration of 5.0 vol.%. The CIE color coordinates were about x=0.33 and y=0.34 at 11V, showing a good white color.

• Journal of Magnetics
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• v.9 no.4
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• pp.125-127
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• 2004

We have grown Mn-doped $Bi_2Se_3$ and $Sb_2Se_3$ single crystals using the temperature gradient solidification method. We report on the structural and magnetic propertis of Mn-doped $Bi_2Se_3$ and $Sb_2Se_3$ compound semi-conductors. The lattice constants of several percent Mn-doped $Bi_2Se_3$ and $Sb_2Se_3$ were slightly smaller than those of the un-doped samples due to the smaller Mn atomic radius ($1.40 {\AA}$) than those of Bi ($1.60 {\AA}$) and Sb ($1.45 {\AA}$). Mn-doped $Bi_2Se_3$ and $Sb_2Se_3$ showed spin glass and paramagnetic properties, respectively.

• Journal of Magnetics
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• v.14 no.2
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• pp.80-85
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• 2009

The mineral dissolution sensor system using GMR-SV and glass/Mg(200 nm) was prepared and characterized. The magnetic field sensitivity of GMR-SV to microscopic magnetic variation was about 0.8%/Oe. The change that occurs when Mg-film dissolves in water, the solubility of water, which is one of the basic properties of mineral water, was sensed by measuring the subtle variation of an electric current. In the case of edible water with Mg mineral added, bubbles were generated on the surface of the Mg film in the first 45 minutes, and the number of drops that were dissolved more rapidly than with the tap and DI waters later reduced to zero. For the edible water samples that each had different mineral Mg concentrations, the Mg solubility speed significantly differed. After injecting Mg film into the edible water, the magnetoresistance of the output GMR-SV signal decreased from a maximum of $45.4\;{\Omega}$ to a minimum of $43.6\;{\Omega}$. The measurement time was within 1 min, giving the rate of change ${\Delta}R/{\Delta}t=0.18\;{\Omega}/s$. This measurement system can be applied to develop a mineral Mg solubility GMR-SV sensor that can be used to sense the change from edible water to reduced alkali.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.165-166
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• 2006

Boron phosphide thin films were prepared on the glass substrate from boron and phosphorous alkoxide precursors by sol-gel processing. Boron phosphide sol with equivalent ratio $(CH_3O_3)B$ : $C_{18}H_{15}P$ = 13 : 2 was selected. Films spin-coated at 4000 rpm for 30 s were coated uniformly. Decomposition and crystallization behavior were examined using DSC/TGA and XRD. The films were sintered at 250, 300 and $400^{\circ}C$. It was determined that crystal structure has a rhombohedral phase. The microstructure of thin film was observed using SEM. Thin films approximately showed a visible ray transmittance of 85 %.

• Current Photovoltaic Research
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• v.11 no.4
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• pp.103-107
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• 2023

A Nickel oxide (NiO_x) thin films were prepared via sol-gel process on a transparent conductive oxide glass substrate. The NiO_x thin films were spin-coated in ambient air and subsequently annealed for 30 minutes at temperatures ranging from 150℃ to 450℃. The structural and optical characteristics of the NiO_x thin films annealed at various temperatures were measured using X-ray diffraction, field emission scanning electron microscopy, and ultraviolet-visible spectroscopy. After optimizing the NiO_x coating conditions, perovskite solar cells were fabricated with p-i-n inverted structure, and its photovoltaic performance was evaluated. NiO_x thin films annealed at 350℃ exhibited the most favorable characteristics as a hole transport layer, resulting in the highest power conversion efficiency of 17.88 % when fabricating inverted perovskite solar cells using this film.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.2
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• pp.63-67
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• 2010

The organic solar cells with Glass/ITO/PEDOT:PSS/P3HT:PCBM/Al structure were fabricated using regioregular poly (3-hexylthiophene) (P3HT) polymer:(6,6)- phenyl $C_{61}$-butyric acid methyl ester (PCBM) fullerene polymer as the bulk hetero-junction layer. The P3HT and PCBM as the electron donor and acceptor materials were spin casted on the indium tin oxide (ITO) coated glass substrates. The optimum mixing concentration ratio of photovoltaic layer was found to be P3HT:PCBM = 4:4 in wt%, indicating that the short circuit current density ($J_{SC}$), open circuit voltage ($V_{OC}$), fill factor (FF) and power conversion efficiency (PCE) values were about 4.7 $mA/cm^2$, 0.48 V, 43.1% and 0.97%, respectively. To investigate the effects of the post annealing treatment, as prepared organic solar cells were post annealed at the treatment time range from 5min to 20min at $150^{\circ}C$. $J_{SC}$ and $V_{OC}$ increased with increasing the post annealing time from 5min to 15min, which may be originated from the improvement of the light absorption coefficient of P3HT and improved ohmic contact between photo voltaic layer and Al electrode. The maximum $J_{SC},\;V_{OC}$, FF and PCE values of organic solar cell, which was post annealed for 15min at $150^{\circ}C$, were found to be about 7.8 $mA/cm^2$, 0.55 V, 47% and 2.0%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.329-329
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• 2008

To date, rubbing has been widely used to align LC molecules uniformly. Although rubbing can be simple, it has fundamental problems such as the generation of defects by dust and static electricity, and difficulty in achieving a uniform LC alignment on a large substrate. Therefore, noncontact alignment has been investigated. Ion beam induced alignment method, which provides controllability, nonstop process, and high resolution display. In this study, we investigated liquid crystal (LC) alignment with ion beam (IB) that non contact alignment technique on polyimide and electro-optical characteristics of twisted nematic (TN)-liquid crystal display (LCD) on the poly imide under various ion beam angles. In this experiment, Polyimide layer was coated on glass by spin-coating and Voltage-transmittance(VT) and response time characteristics of the TN cell were measured by a LCD evaluation system. The good characteristics of the nematic liquid crystal (NLC) alignment with the ion beam exposure poly imide surface was observed. The tilt angle of NLC on the PI surface with ion beam exposure can be measured under $1^{\circ}4 for all of irradiation angles. In addition, it can be achieved the good ED properties, and residual DC property of the ion beam aligned TN cell on polyimide surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.44-44
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• 2008

To date, rubbing has been widely used to align LC molecules uniformly. Although rubbing can be simple, it has fundamental problems such as the generation of defects by dust and static electricity, and difficulty in achieving a uniform LC alignment on a large substrate. Therefore, non contact alignment has been investigated. Ion beam induced alignment method, which provides controllability, nonstop process, and high resolution display. In this study, we investigated liquid crystal (LC) alignment with ion beam (IB) that non contact alignment technique on polyimide and electro-optical characteristics of twisted nematic (TN)-liquid crystal display (LCD) on the polyimide under various ion beam angles. In this experiment, Polyimide layer was coated on glass by spin-coating and Voltage-transmittance(VT) and response time characteristics of the TN cell were measured by a LCD evaluation system. The good characteristics of the nematic liquid crystal (NLC) alignment with the ion beam exposure polyimide surface was observed. The tilt angle of NLC on the PI surface with ion beam exposure can be measured under $1^{\circ}$ for all of irradiation angles. In addition, it can be achieved the good EO properties, and residual DC property of the ion beam aligned TN cell on polyimide surface.

• Journal of IKEEE
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• v.23 no.2
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• pp.594-598
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• 2019

We demonstrate an alternative alignment process using transferring process on solution driven HfZnO film. Parallel pattern is firstly fabricated on a silicon wafer by laser interference lithography. Prepared HfZnO solution fabricated by sol-gel process is spin-coated on a glass substrate. The silicon wafer with parallel pattern is placed on the HfZnO film and annealed at $100^{\circ}C$ for 30 min. After transferring process, parallel grooves on the HfZnO film is obtained which is confirmed by atomic force microscopy and scanning electron microscopy. Uniform liquid crystal alignment is achieved which is attributed to an anisotropic characteristic of HfZnO film by parallel grooves. The liquid crystal cell exhibited a pretilt angle of $0.25^{\circ}$ which showed a homogeneous alignment property.