Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Properties of Sol-Gel derived $B_{13}P_2$ Thin Films

졸겔법에 의한 보론 포스파이드의 박막 증착 및 특성에 관한 연구

  • Published : 2006.06.22
Download PDF
⟨ Previous Next ⟩

Abstract

Boron phosphide thin films were prepared on the glass substrate from boron and phosphorous alkoxide precursors by sol-gel processing. Boron phosphide sol with equivalent ratio $(CH_3O_3)B$ : $C_{18}H_{15}P$ = 13 : 2 was selected. Films spin-coated at 4000 rpm for 30 s were coated uniformly. Decomposition and crystallization behavior were examined using DSC/TGA and XRD. The films were sintered at 250, 300 and $400^{\circ}C$. It was determined that crystal structure has a rhombohedral phase. The microstructure of thin film was observed using SEM. Thin films approximately showed a visible ray transmittance of 85 %.

Keywords