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http://dx.doi.org/10.6117/kmeps.2011.18.4.079

Preparation and Characterization of White Phosphorescence Polymer Light Emitting Diodes Using PFO:Ir(ppy)3:MDMO-PPV Emission Layer  

Park, Byung-Min (Department of Electronics Engineering, Dankook University)
Chang, Ho-Jung (Department of Electronics Engineering, Dankook University)
Publication Information
Journal of the Microelectronics and Packaging Society / v.18, no.4, 2011 , pp. 79-83 More about this Journal
Abstract
White phosphorescence polymer light emitting diodes (WPhPLEDs) with a glass/ITO/PEDOT:PSS/PFO:$Ir(ppy)_3$:MDMO-PPV/TPBI/LiF/Al structure were fabricated to investigate the effects of $Ir(ppy)_3$ doping concentrations on the optical and electrical properties of the devices. PFO, $Ir(ppy)_3$ and MDMO-PPV conjugated polymers as host and guest materials in the emission layer were spin coated at various concentrations of $Ir(ppy)_3$ ranging from 0.0 to 20.0 vol.%. As the concentration of $Ir(ppy)_3$ increased from 5.0 to 20.0 vol.%, the luminance and current efficiency values of the devices decreased clearly, which are attributable to the quenching effect at a high doping concentration. The maximum luminance and current density were 2850 $cd/m^2$ and 741 $mA/cm^2$, respectively for a WPhPLED with an $Ir(ppy)_3$ concentration of 5.0 vol.%. The CIE color coordinates were about x=0.33 and y=0.34 at 11V, showing a good white color.
Keywords
white polymer light emitting diode; phosphorescence; PFO; $Ir(ppy)_3$; MDMO-PPV;
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