• Title/Summary/Keyword: Spin glass

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Development and Analysis of Graphene Oxide Thin Film Coating (산화그래핀 박막 코팅기술 개발 및 특성평가)

  • Cheon, Yeong Ah;Nam, Jin-Su;Son, Kyung Soo;Im, Young Tae;Ahn, Won Kee;Chung, Bong Geun
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.39 no.5
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    • pp.463-469
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    • 2015
  • In this study, we synthesized graphene oxide and developed novel spin-spray coating technology. The graphene oxide thin film was uniformly coated on amine-functionalized glass surfaces using spin-spray coating technology. We also stacked up to four layers of graphene oxide on glass substrates in a uniform manner. From the results, we infer that this spin-spray coating of graphene oxide thin film could be a powerful tool for various electronic display coating applications.

Properties of Polymethyl methacrylate (PMMA) for Polymer Gate Dielectric Thin Films Prepared by Spin Coating (Spin coating 공정을 이용한 Polymethyl methacrylate (PMMA) 박막의 polymer gate dielectric layer로써의 특성평가)

  • Na, Moon-Kyong;Kang, Dong-Pil;Ahn, Myeog-Sang;Myoung, In-Hye;Kang, Young-Taec
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.05b
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    • pp.29-32
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    • 2005
  • Poly (methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observeed by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for different thermal treatment temperature. PMMA films were showed proper dielectric constant and breakdown voltage. Above the glass transition temperature PMMA films degraded. C-V measured at various frequencies, dielectric constant increased a little. The absence of hysteresis in the C-V characteristics, which eliminate the possibility of mobile charges in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.

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PEDOT:PSS의 성막방법에 따른 유기태양전지용 ITO 투명전극과 PEDOT:PSS의 계면반응 연구

  • Kim, Hyo-Jung;Lee, Ju-Hyeon;Kim, Han-Gi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.329-329
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    • 2013
  • 본 연구에서는 PEDOT:PSS와 crystalline-ITO (c-ITO) 박막 계면에서의 화학적 반응을(박리 및 용해 특성)을 관찰하기위해 spin-coating 및 droplet dropping을 통하여 PEDOT:PSS 용액을 코팅하고 이후 화학적 거동에 따른 전기적, 광학적 및 구조적 특성 변화를 관찰하였다. 강산성을 띄는 PEDOT:PSS (Al 4083) 박막의 코팅 전, 0.4T sodalime glass 위에 열처리를 통하여 성막된 c-ITO 투명전극을 15분 동안 상압 오존 공정을 통하여 계면처리함으로써 다른 변수의 영향을 배제하였으며, 표면 처리 후 spin-coating 및 droplet dropping method를 통하여 PEDOT:PSS를 코팅하여 c-ITO와 PEDOT:PSS 계면사이의 화학적 반응의 영향을 시간 경과에 따라 분석하였다. PEDOT:PSS 코팅 후 솔밴트 제거를 위해 hot plate를 이용하여 $110^{\circ}C$로 열처리되었다. Spin-coating 방법과는 달리 droplet dropping 방법을 통해 형성된 c-ITO 투명전극/PEDOT:PSS 계면에서는 spin coating에서 적용된 동일한 공정변수적용에도 불구하고 PEDOT:PSS의 산성으로 인한 ITO 투명전극 표면에서의 화학적 조성변화가(In, Sn, O의 조성의 변화) 발생됨을 x-ray photoelectron spectroscopy 결과를 통해 확인하였다. 뿐만 아니라 계면 조성반응 변화에 따른 전기적 특성 및 광학적 투과율의 열화가 발생됨을 Hall measurement 측정과 UV/Vis spectrometer 결과를 통하여 도출하였다. 본 결과를 통해 c-ITO/PEDOT:PSS 사이에서 발생되는 내산특성/계면 화학변화가 유기태양전지에서의 산화물 투명전극과 유기물 계면 열화현상에 영향을 받을 수 있음을 나타낸다.

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Characterization of F- and Al-codoped ZnO Transparent Conducting Thin Film prepared by Sol-Gel Spin Coating Method

  • Nam, Gil Mo;Kwon, Myoung Seok
    • Journal of the Korean Ceramic Society
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    • v.53 no.3
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    • pp.338-342
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    • 2016
  • ZnO thin film co-doped with F and Al was prepared on a glass substrate via simple non-alkoxide sol-gel spin coating. For a fixed F concentration, the addition of Al co-dopant was shown to reduce the resistivity mainly due to an increase in electrical carrier density compared with ZnO doped with F only, especially after the second post-heat-treatment in a reducing environment. There was no effective positive contribution to the reduction in resistivity due to the mobility enhancement by the addition of Al co-dopant. Optical transmittance of the ZnO thin film co-doped with F and Al in the visible light domain was shown to be higher than that of the ZnO thin film doped with F only.

High Exchange Coupling Field and Thermal Stability of Antiferromagnetic Alloy NiMn Spin Valve Films

  • Lee, N. I.;J. H. Yi;Lee, G. Y.;Kim, M. Y.;J. R. Rhee;Lee, S. S.;D. G. Hwang;Park, C. M.
    • Journal of Magnetics
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    • v.5 no.2
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    • pp.50-54
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    • 2000
  • NiMn-pinned spin valve films consisting of a layered glass/NiFe/Co/Cu/Co/NiFe/NiMn/Ta stack were made by do magnetron sputtering. After deposition, the structure was annealed in a series of cycles each including three hours at $220^\circ C, 2\times10^{-6}$ Torr, in a field of 350 Oe, to create an ordered antiferromagnetic structure in the NiMn layer and produce a strong unidirectional pinning field in the pinned magnetic layer, Optimum spin valve properties were obtained after seven annealing cycles, or 21 hours at $220^\circ C$, and were : MR ratio 1%, exchange coupling field 620 Oe, and coercivity of pinned layer 250 Oe. The exchange coupling field remained constant up to an operating temperature of $175^\circ C$, and the blocking temperature was about $380^\circ C$.

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Structural and Magnetic Properties of NixZnyFe3-x-yO4 Films Prepared by Spin-Spray Ferrite Plating Method (스핀 스프레이 페라이트 플레이팅법으로 제작한 NixZnyFe3-x-yO4 박막의 결정학적 및 자기적 특성)

  • Kim, Myung-Ho;Jang, Kyung-Uk
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.51 no.2
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    • pp.82-86
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    • 2002
  • A series of $Ni_xZn_yFe_{3-x-y}O_4$ films were prepared by spin-spray ferrite plating on glass substrates from aqueous solution at $90[^{\circ}C]$. The magnetic properties in terms of contents of Ni and Zn in the plated films are presented. All the films are polycrystalline with spinel structure. At x+y=0.58, the film presents preferential orientation. As composition of y in the films increases grain size and void in the films increases, while saturation magnetization and coercive force of the films decrease.

Sol-gel Spin-coating of ZnO Co-doped with (F, Ga) as A Transparent Conducting Thin Film ((F, Ga) 코도핑된 ZnO 투명 전도 박막의 솔-젤 제조와 특성)

  • Nam, Gil Mo;Kwon, Myoung Seok
    • Journal of the Semiconductor & Display Technology
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    • v.13 no.1
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    • pp.91-95
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    • 2014
  • (F,Ga) co-doped ZnO thin film on glass substrate was fabricated via a simple non-alkoxide sol-gel spin-coating. Contrary to the F single doped ZnO thin film, the (F,Ga) co-doped thin film showed a significant reduce in electrical resistivity after a second post-heat-treatment in reducing environment. The resulting decrease in electrical resistivity with Ga co-doping is considered to be resulted from the increases both carrier density and mobility. The optical transmittance of the (F,Ga) co-doped thin film in the visible range showed higher transmittance with Ga co-doping compared with F single doped ZnO thin film.

Coating gold nanoparticles to a glass substrate by spin-coat method as a surface-enhanced raman spectroscopy (SERS) plasmonic sensor to detect molecular vibrations of bisphenol-a (BPA)

  • Eskandari, Vahid;Hadi, Amin;Sahbafar, Hossein
    • Advances in nano research
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    • v.13 no.5
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    • pp.417-426
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    • 2022
  • Bisphenol A (BPA) is one of the chemicals used in monomer epoxy resins and polycarbonate plastics. The surface-enhanced Raman spectroscopy (SERS) method is precise for identifying biological materials and chemicals at considerably low concentrations. In the present article, the substrates coated with gold nanoparticles have been studied to identify BPA and control the diseases caused by this chemical. Gold nanoparticles were made by a simple chemical method and by applying gold salt and trisodium citrate dihydrate reductant and were coated on glass substrates by a spin-coat approach. Finally, using these SERS substrates as plasmonic sensors and Raman spectroscopy, the Raman signal enhancement of molecular vibrations of BPA was investigated. Then, the molecular vibrations of BPA in some consumer goods were identified by applying SERS substrates as plasmonic sensors and Raman spectroscopy. The fabricated gold nanoparticles are spherical and quasi-spherical nanoparticles that confirm the formation of gold nanoparticles by observing the plasmon resonance peak at 517 nm. Active SERS substrates have been coated with nanoparticles, which improve the Raman signal. The enhancement of the Raman signal is due to the resonance of the surface plasmons of the nanoparticles. Active SERS substrates, gold nanoparticles deposited on a glass substrate, were fabricated for the detection of BPA; a detection limit of 10-9 M and a relative standard deviation (RSD) equal to 4.17% were obtained for ten repeated measurements in the concentration of 10-9 M. Hence, the Raman results indicate that the active SERS substrates, gold nanoparticles for the detection of BPA along with the developed methods, show promising results for SERS-based studies and can lead to the development of microsensors. In Raman spectroscopy, SERS active substrate coated with gold nanoparticles are of interest, which is larger than gold particles due to the resonance of the surface plasmons of gold nanoparticles and the scattering of light from gold particles since the Raman signal amplifies the molecular vibrations of BPA. By decreasing the concentration of BPA deposited on the active SERS substrates, the Raman signal is also weakened due to the reduction of molecular vibrations. By increasing the surface roughness of the active SERS substrates, the Raman signal can be enhanced due to increased light scattering from rough centers, which are the same as the larger particles created throughout the deposition by the spin-coat method, and as a result, they enhance the signal by increasing the scattering of light. Then, the molecular vibrations of BPA were identified in some consumer goods by SERS substrates as plasmonic sensors and Raman spectroscopy.

Fabrication of SOI FinFET Devices using Arsenic Solid-phase-diffusion

  • Cho, Won-Ju;Koo, Hyun-Mo;Lee, Woo-Hyun;Koo, Sang-Mo;Chung, Hong-Bay
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.5
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    • pp.394-398
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    • 2007
  • A simple doping method to fabricate a very thin channel body of the nano-scaled n-type fin field-effect-transistor (FinFET) by arsenic solid-Phase-diffusion (SPD) process is presented. Using the As-doped spin-on-glass films and the rapid thermal annealing for shallow junction, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. The n-type FinFET devices with a gate length of 20-100 nm were fabricated by As-SPD and revealed superior device scalability.