• Journal of Magnetics
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• v.12 no.4
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• pp.152-155
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• 2007

Spin dependent transport was investigated in lateral $Py(Ni_{81}Fe_{19})/Au/Py$ spin valve devices. Clear spin valve effect was observed in conventional four-terminal measurement geometry. Higher resistance was found in antiparallel magnetization field of two Py electrodes which is determined by anisotropy magnetoresistance (AMR) measurements. The rectangular shape of spin signal together with good agreement of switching field convinces observed spin valve signal is resulted from effective spin injection and detection. The magnetoresistance ratio decays exponentially with channel length by which spin diffusion length of Au channel was estimated to be 76 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.336-336
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• 2016

We have investigated magneto-transport properties in a MoS2 lateral spin-valve structures for different ferromagnetic CoFe electrode shapes and MoS2 channel lengths. For these devices, high quality and large-scale MoS2 thin films were synthesized through sulfurization of epitaxial MoO3 films and these sulfurized-MoO3 thin films properties are in good agreements with measurements on exfoliated MoS2 film. Magneto-transport measurements show a clear rectangular magnetoresistance signal of 0.16% and a spin polarization of 0.00012%. By using the one-dimensional spin diffusion equation, we extracted the spin diffusion length and coefficient, finding them to be 12 nm and $1.44{\times}10-3cm2/s$, respectively. These small values of magnetoresistance and spin polarization could be enhanced by appeasement of conductivity mismatch between the ferromagnet and semiconductor interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.394-398
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• 2007

A simple doping method to fabricate a very thin channel body of the nano-scaled n-type fin field-effect-transistor (FinFET) by arsenic solid-Phase-diffusion (SPD) process is presented. Using the As-doped spin-on-glass films and the rapid thermal annealing for shallow junction, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. The n-type FinFET devices with a gate length of 20-100 nm were fabricated by As-SPD and revealed superior device scalability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.133-134
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• 2006

A simple doping method to fabricate a very thin channel body of the n-type fin field-effect-transistor (FinFET) with a 20 nm gate length by solid-phase-diffusion (SPD) process is presented. Using As-doped spin-on-glass as a diffusion source of arsenic and the rapid thermal annealing, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. Single channel and multi-channel n-type FinFET devices with a gate length of 20-100 nm was fabricated by As-SPD and revealed superior device scalability.

• Proceedings of the Korean Magnestics Society Conference
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• 2006.06a
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• pp.32-33
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• 2006

• Journal of Magnetics
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• v.10 no.3
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• pp.77-79
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• 2005

In this work, we present a comprehensive and systematic approach for the derivation of the dc voltage generated by a magnetic multilayer undergoing ferromagnetic resonance, originally derived by Berger. Our alternative derivation applies especially in the limit of the spin diffusion length much longer than the carrier mean free path.

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.96-96
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• 2010

We report the proper resistance-area products in the single crystalline bcc CoFe/MgO tunnel contact on nondegenerate n-Ge desirable for efficient spin injection and detection at room temperature. The electric properties of the crystalline CoFe(5 nm)/MgO(1.5,2.0,2.5 nm)/n-Ge(001) tunnel contacts have been investigated by I-V-T and C-V measurements. Interestingly, the tunnel contact with the 2-nm MgO exhibits the ohmic behavior with low resistance-area products, satisfying the theoretical conditions required for significant spin injection and detection. This result is ascribed to the presence of MgO layer between CoFe and n-Ge, enhancing the Schottky pinning parameter as well as shifting the charge neutrality level.

• Proceeding of EDISON Challenge
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• 2014.03a
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• pp.183-195
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• 2014

Kinetically constrained models (KCM) have attracted interest as models that assign dynamic origins to the interesting dynamic properties of supercooled liquid. Signs of dynamic heterogeneity in the crossover model that linearly interpolates between the FA-like symmetric constraint and the East model constraint by asymmetric parameter b were investigated using Monte Carlo technique. When the asymmetry parameter was decreased sufficiently, smooth fragile-to-strong dynamic transition was observed in terms of the relaxation time, diffusion constant, Stokes-Einstein violation, and dynamic length scale. Competition between energetically favored symmetric relaxation mechanism and entropically favored asymmetric relaxation mechanism is behind such transition.

• Bulletin of the Korean Chemical Society
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• v.13 no.3
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• pp.296-306
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• 1992

$^{13}C$ spin-lattice relaxation times were measured for n-alkanes of moderate chain length, ranging from n-octane to n-dodecane, under the condition of proton broad-band decoupling within the temperature range of 248-318 K in order to gain some insight into basic features of segmental motions occurring in long chain ploymeric molecules. The NOE data showed that except for methyl carbon-13 dipole-dipole interactions between $^{13}C$ and directly bonded $^1H$ provide the major relaxation pathway, and we have analyzed the observed $T_1data$ on the basis of the internal rotational diffusion theory by Wallach and the conformational jump theory by London and Avitabile. The results show that the internal rotational diffusion constants about C-C bonds in the alkane backbone are all within the range of $10^9\;-10^10\;sec^{-1}$ in magnitude while the mean lifetimes for rotational isomers are all of the order of $10^{-11}\;-10^{-10}$ sec. Analysis by the L-A theory predicts that activation energies for conformational interconversion between gauche and trans form gradually increase as we move from the chain end toward the central C-C bond and they are within the range of 2-4 kcal/mol for all the compounds investigated.

• Journal of Magnetics
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• v.7 no.3
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• pp.98-100
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• 2002

Tunnel magnetoresistive devices using an individual multi-walled carbon nanotube were fabricated and their low-temperature electrical transport propertiers were investigated. With the ferromagnetic Co electrodes, the multi-walled carbon nanotube exhibited hysteretic magnetoresistance curve at low temperatures. Depending on the temperature and the bias current, the magnetoresistance ratio can be as high as 16% at the temperature of 2.2 K. Such high magnetoresistance ratio indicates a long diffusion length of the multi-walled carbon nanotube.