• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2002.05a
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• pp.247-252
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• 2002

A rate gyroscope has been used popularly to measure the angular motion of a given vehicle using a symmetric rotor spinning rapidly about its symmetry axis. Since the rapid rotation is required in this type of gyroscope, the motor has been used to make the rotor spin, so that it results in a heavy configuration. The tuning-fork gyroscope has been developed to avoid this problem, which utilizes a coriolis coupling term and vibration about one axis. Because of the coriolis effect, the vibration of one axis is transferred to other axis when the angular motion along the vibrating axis is given to the system. The concept of a tuning-fork gyroscope was recently realized using MEMS techniques. However, the dynamic characteristics of the tuning-fork gyroscope has not been discussed in detail. In this study, we derived the equations of motion for the tuning-fork type gyroscope using the energy approach and investigated the dynamic characteristics by means of numerical analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.306-306
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• 2011

Three dimensional(3D) topological insulators(TIs) of Bi binary alloys are characterized by a bulk energy gap with strong spin-orbit coupling and metallic surface states protected by time-reversal symmetry. It was reported that film forms of such materials were advantageous over bulk forms due to less defect density and better crystallinity. So far, the films have been prepared on several substrates including semiconductors and graphene. But, there were no studies on metal substrates. For electronic transport experiments and device applications, it is necessary to know epitaxial relation between TIs and metal electrodes. In this study, Atomically flat films of Bi2Se3 were grown on a Au(111) metal substrate by in-situ molecular beam epitaxy. Using home-built scanning tunneling microscope, we observed hexagonal atomic structures which corresponded to the outmost selenium atomic layer of Bi2Se3. Triangular-shaped defects known as Selenium vacancy were also found.

• Journal of Magnetics
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• v.16 no.4
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• pp.332-336
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• 2011

We studied the effect on the electronic and magnetic properties of the N defect in clean and Cu-doped wurtzite III-nitrides by using the first-principles calculations. When it is doped two Cu atoms in the nearest neighboring sites, the system of AlN, GaN, or InN with the N vacancy is energetically more favorable than that without the N vacancy site. When the Cu concentration increases, the total magnetic moment of a supercell becomes small. The ferromagnetism of Cu atom is very low due to the weak 3d-3d coupling. It is noticeable that the spin-exchange interaction between the Cu-3d and N defect states is important.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.13-16
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• 2003

Magnetic and magneto-optical properties of Fe/Pt/Fe, Co/Pd/Co trilayers and also the sandwiches with wedge-shaped magnetic (Fe, Co) and nonmagnetic (Pt, Pd) layers were investigated. The oscillatory behavior of the saturation field $H_{s}$ of the studied trilayers with changing the thickness of the nonmagnetic layer (NML) $t_{NML}$ was revealed. That was explained by the exchange coupling between ferromagnetic layers (FML) through the nonmagnetic spacer. For the first time, oscillations of the transverse Kerr effect (TKE) with changing the Pt- and Pd-wedge thickness were discovered. Period of these oscillations was found to depend on the FML thickness and the photon energy of the incident light. TKE spectra of the examined samples were discovered to modify very strongly with increasing $t_{NML}$. The discovered peculiarities of magneto-optical properties of thin-film systems were explained by a concept of the spin-polarized quantum well states in the pt and Pd layers.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.679-682
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• 1995

The observed high-field magnetization curves of $Sm_{2}Fe_{17}N_{3.0}$ at 4.2 K and 296 K are well reproduced by the calculation using the Sm-Fe exchange field $2\mu\textrm{B}H_{ex}\;=\;320\;K$ and two crystalline electric field parameters ${A_{0}}^{2}=\;-910\;K$ and ${A_{1}}^{0}=\;200\;K$. The calculation shows that during the magnetization process along the hard axis at 4.2 K, the Sm moment rotates toward the direction antiparallel to H when H < 110 kOe and then returns to the field direction with further increase of the field. At 296 K, the Sm moment rotates toward the direction antiparallel to H monotonously with increasing field and finally becomes antiparallel to H when $H{\geq}H_{A}=210\;kOe$. The particular magnetization process of the Sm moment can be explained by the field-induced noncollinear coupling between the spin and orbital moments of the Sm ion.

• Journal of Magnetics
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• v.10 no.3
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• pp.99-102
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• 2005

Modification in exchange bias of a NiFe/FeMn/NiFe trilayer, on introduction of a nonmagnetic Al layer at the top FeMn/NiFe interface, is investigated in multilayers prepared by rf magnetron sputtering. The introduction of Al layer leads to vanishing of bias of the top NiFe layer. But the bias for the bottom NiFe layer increases steadily with increasing Al layer thickness and attains bias (230 Oe) which is greater than that of the trilayer without the Al layer (150 Oe). When the top NiFe layer thickness is varied, exchange bias has highest value at 12 nm thickness for 1 nm thicknes of Al layer. Ion beam etching of the top NiFe layer also leads to an enhancement in bias for the bottom NiFe layer.

• Bulletin of the Korean Chemical Society
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• v.19 no.3
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• pp.295-299
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• 1998

HSP104 protein in Saccharomyces cerevisiae is known to provide thermotolerance when induced by various kinds of stresses, such as a mild heat shock, ethanol, and hypoxia. It helps cells survive at an otherwise lethal temperature. Mechanisms by which HSP104 protein works are yet to be elucidated. In order to understand a molecular basis of thermotolerance due to HSP104 protein induced by a mild heat shock, studies on respiratory pathways were carried out in the wild type as well as in the hsp104 deleted mutant. Especially the degree of 13C-acetate incorporation into glutamate-C4 was examined for both strains using 13C-13C homonuclear spin coupling measurements, since glutamate is in a rapid equilibrium with α-ketoglutarate in the TCA cycle. In addition, the temperature effects on the rate of 13C incorporation are compared with or without HSP104 protein expressed. Finally, the inhibitory effect of HSP104 on the respiration pathway was confirmed by the measurements of oxygen consumption rates for both strains.

• Journal of the Korean Magnetics Society
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• v.3 no.3
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• pp.179-184
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• 1993

The X-ray diffraction pattern of amorphous $Fe_{78}Si_{9}B_{13}$ alloy was analyzed to obtain the radial distribution function (RDF) where the first peak was in the form of Gaussian function. The calculated coordination number of the form of Gaussian functiono The calculated coordination number of the sample is 13.5, the mean distance betweeon near-neighbor atoms $r_{0}$ is $2.595{\AA}$ and a Gaussian parametet ${\delta}r$ indicating near-neighbor atomic distri-bution is $0.27{\AA}$. The temperature dependence of saturated magnetization at low temperature could be explained by spin wave excitations theory yielding the spin wave stiffness constant as $117.8\;meV\;{\AA}^2$. Also, we tried to fit the observed temperature dependence of saturated magnetization with the Handrich's equation of the modified molecular field theory for the amorphous ferromagnet. Nice fittings are obtained when we used the parameters ${\Delta}=0.32$(S=1/2) and ${\Delta}=0.23$(S=1), respectively. Finally, the calculated spin wave stiffness constant using the parameters and the structural data are $149\;meV\;{\AA}^2$ for S=1/2 and $138\;meV\;{\AA}^2$ for S=1, respectively. The mean exchange coupling integral between near-neighbor atoms was estimated to be 17.9 meV for S=1/2 and 6.7 meV for S=1.

• Journal of the Korean Magnetics Society
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• v.26 no.2
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• pp.39-44
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• 2016

Determination of the structural, electronic, and magnetic properties of the magnetically doped bismuth-telluride alloys are drawing lots of interest in the fields of the thermoelectric application as well as the research on magnetic interaction and topological insulator. In this study, we performed the first-principles electronic structure calculations within the density functional theory for the Gd doped bismuth-tellurides in order to study its magnetic properties and magnetic phase stability. All-electron FLAPW (full-potential linearized augmented plane-wave) method is employed and the exchange correlation potentials of electrons are treated within the generalized gradient approximation. In order to describe the localized f-electrons of Gd properly, the Hubbard +U term and the spin-orbit coupling of the valence electrons are included in the second variational way. The results show that while the Gd bulk prefers a ferromagnetic phase, the total energy differences between the ferromagnetic and the antiferromagnetic phases of the Gd doped bismuth-telluride alloys are about ~1meV/Gd, indicating that the stable magnetic phase may be changed sensitively depending on the structural change such as defects or strains.

• Journal of the Korean Magnetics Society
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• v.9 no.6
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• pp.291-295
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• 1999

$NiFe/Co/Al_2O_3/Co/IrMn$ tunneling junctions were grown on (100)Si wafer and their spin-valve tunneling magnetoresistance (TMR) was studied. The tunneling junctions were grown by using a 5-gun RF/DC magnetron sputter. $Al_2O_3$ barrier layer was formed by exposing Al layer to oxygen atmosphere at 6$0^{\circ}C$ for 72 hours. Strong exchange coupling interaction is observed between the ferromagnetic Co and the antiferromagnetic IrMn of Co/IrMn bilayer when IrMn is 100$\AA$ thick. $NiFe(183\;{\AA})/Co(17\;{\AA})/Al_2O_3(16\;{\AA})/Co(100\;{\AA})/IrMn(100\;{\AA})$ tunneling junction shows best TMR ratio of about 10% in the applied magnetic field range of $\pm$20 Oe. The TMR ratio is improved about 23% and electrical resistance is decreased about 34% when annealed at 200 $^{\circ}C$ for 1 hour in magnetic field of 330 Oe, parallel to the bottom electrode. With increasing the active area of junction the TMR ratio increases while electrical resistance decreases.