• Title/Summary/Keyword: Spike Leakage

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Influence of Dose on the Property of Cobalt Silicides in Source/Drain Area (소오스/드레인 영역의 도펀트 양의 증가에 따른 코발트실리사이드의 물성변화)

  • Cheong, Seong-Hwee;Song, Oh-Sung;Kim, Min-Sung
    • Korean Journal of Materials Research
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    • v.13 no.1
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    • pp.43-47
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    • 2003
  • As and BF$_2$dopants are implanted for the formation of source/drain with dose of 1${\times}$10$^{15}$ ions/$\textrm{cm}^2$∼5${\times}$10$^{15}$ ions/$\textrm{cm}^2$ then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are employed to meet the sub-0.13 $\mu\textrm{m}$ CMOS devices. We investigated the process results of sheet resistance, dopant redistribution, and surface-interface microstructure with a four-point probe, a secondary ion mass spectroscope(SIMS), a scanning probe microscope (SPM), and a cross sectional transmission electron microscope(TEM), respectively. Sheet resistance increased to 8%∼12% as dose increased in $CoSi_2$$n^{+}$ and $CoSi_2$$p^{V}$ , while sheet resistance uniformity showed very little variation. SIMS depth profiling revealed that the diffusion of As and B was enhanced as dose increased in $CoSi_2$$n^{+}$ and $CoSi_2$$p^{+}$ . The surface roughness of root mean square(RMS) values measured by a SPM decreased as dose increased in $CoSi_2$$n^{+}$ , while little variation was observed in $CoSi_2$$p^{+}$ . Cross sectional TEM images showed that the spikes of 30 nm∼50 nm-depth were formed at the interfaces of $CoSi_2$$n^{+}$ / and $CoSi_2$/$p^{+}$, which indicate the possible leakage current source. Our result implied that Co/Ti cobalt salicide was compatible with high dose sub-0.13$\mu\textrm{m}$ process.

Performance Improvement of Isolated High Voltage Full Bridge Converter Using Voltage Doubler

  • Lee, Hee-Jun;Shin, Soo-Cheol;Hong, Seok-Jin;Hyun, Seung-Wook;Lee, Jung-Hyo;Won, Chung-Yuen
    • Journal of Electrical Engineering and Technology
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    • v.9 no.6
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    • pp.2224-2236
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    • 2014
  • The performance of an isolated high voltage full bridge converter is improved using a voltage doubler. In a conventional high voltage full bridge converter, the diode of the transformer secondary voltage undergoes a voltage spike due to the leakage inductance of the transformer and the resonance occurring with the parasitic capacitance of the diode. In addition, in the phase shift control, conduction loss largely increases from the freewheeling mode because of the circulating current. The efficiency of the converter is thus reduced. However, in the proposed converter, the high voltage dual converter consists of a voltage doubler because the circulating current of the converter is reduced to increase efficiency. On the other hand, in the proposed converter, an input current is distributed when using parallel input / serial output and the output voltage can be doubled. However, the voltages in the 2 serial DC links might be unbalanced due to line impedance, passive and active components impedance, and sensor error. Considering these problems, DC injection is performed due to the complementary operations of half bridge inverters as well as the disadvantage of the unbalance in the DC link. Therefore, the serial output of the converter needs to control the balance of the algorithm. In this paper, the performance of the conventional converter is improved and a balance control algorithm is proposed for the proposed converter. Also, the system of the 1.5[kW] PCS is verified through an experiment examining the operation and stability.

Economic Valuation of the Right to be Forgotten (잊힐 권리의 경제적 가치 추정 연구)

  • Lee, Mi-Suk;Cho, Young-Sang
    • Informatization Policy
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    • v.25 no.2
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    • pp.84-96
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    • 2018
  • The right to be forgotten means the right of people to request information and communication providers to delete their information online. As the number of people asking for deletion of their past embarrassing or negative online activities is increasing, discussions are being raised on the introduction of the right to be forgotten in South Korea. However, previous research on the right to be forgotten mainly deals with the legal concept, with insufficient consideration of economic value. The main purpose of this research is to examine social perception towards the right to be forgotten and to estimate its economic value quantitatively. According to the results, there are concerns about disclosure of personal information, but with lack of awareness on the right to be forgotten. The monthly average amount that a person is willing to pay to be forgotten is 1,218 Korean won (11 US dollars) and the total economic value is estimated to be about 540 billion won (490 million dollars) per year in 2017. Especially, those who have experienced leakage of personal information put higher value to the right to be forgotten. These results can be useful for making decisions about the right to be forgotten in the future.