• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2009.05a
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• pp.388-391
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• 2009

In this paper, We observed spectral responsivity of general poly-cristalline silicon solar cell. This is very important to define solar cell's characteristics. So we tested two small modules that made of poly-cristalline silicon solar cells. We expect to the result of this experiment is useful for researching and measuring solar cell's characteristics.

• Journal of Sensor Science and Technology
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• v.20 no.3
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• pp.156-161
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• 2011

We fabricated a schottky barrier metal oxide semiconductor field effect transistor(SB-MOSFET) by applying indium-tin-oxide(ITO) to the source/drain on a highly resistive GaN layer grown on a silicon substrate. The MOSFET, with 10 ${\mu}M$ gate length and 100 ${\mu}M$ gate width, exhibits a threshold gate voltage of 2.7 V, and has a sub-threshold slope of 240 mV/dec taken from the $I_{DS}-V_{GS}$ characteristics at a low drain voltage of 0.05 V. The maximum drain current is 18 mA/mm and the maximum transconductance is 6 mS/mm at $V_{DS}$=3 V. We observed that the spectral photo-response characterization exhibits that the cutoff wavelength was 365 nm, and the UV/visible rejection ratio was about 130 at $V_{DS}$ = 5 V. The MOSFET-type UV detector using ITO, has a high UV photo-responsivity and so is highly applicable to the UV image sensors.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.5 s.347
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• pp.25-33
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• 2006

We have extracted the material parameters such as absorption coefficients of GaN, $Al_{0.2}Ga_{0.8}N$, and Schottky contact metal Ni of Schottky Diode UV-A and B detectors using a transfer matrix method (TMM). The ratios of the absorbed light to the total incident amount at the depletion regions of GaN and $Al_{0.2}Ga_{0.8}N$ have been calculated in order to obtain the spectral responsivity. Absorption coefficients of the materials have been obtained by fitting the simulated data with measured data. The depletion layer thickness has been obtanied by capacitance-voltage measurement. The results pave the way for the optimum design of UV Schottky detectors. Since the absorption coefficient of the Ni electrode is very high, its thickness is a major factor that determines the responsivity. It is possible to attain improved UV detectors using thinnest possible Ni electrodes and wide depletion regions of GaN and $Al_{0.2}Ga_{0.8}N$.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.1-4
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• 2001

We have fabricated and evaluated a new Si pin photodetector for APF optical link. The fabricated device has the $p^{+}$-guard ring around the metal-semiconductor contact and the web patterned $p^{+}$-shallow diffused region in the light absorbing area. From the measurements of electo-optical characteristics under the bias of -5 V, the junction capacitance of 4 pF and the dark current of 180 pA were obtained. The optical signal current of 1.22 $\mu$A and the responsivity of 0.55 A/W were obtained when the 2.2 $\mu$W optical power with peak wavelength of 670 nm was incident on the device. The fabricated device showed the maximum spectral response in a spectrum of 650-700 nm. It is expected that the fabricated device can be very useful for detecting the optical signal in the application of red light optics.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.247-250
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• 2001

We have fabricated and evaluated a new Si pin photodiode for red light detection with the web patterned $p^{+}$ -shallow diffused region in the light absorbing area. From the measurements of electro-optical characteristics under the bias of -5V, the junction capacitance of 4pF and the dark current of 235pA were obtained. When the 1.6㎼ optical power with peak wavelength of 670nm was incident on the device, the optical signal current of 0.48$\mu\textrm{A}$ and the responsivity of 0.30A/W were obtained. The fabricated device showed the improved sensitivity compared to the conventional circular type device and the maximum spectral response in a spectrum of 670~700nm. The web-patterned Si photodiode can be expected to have the good discrimination characteristics between digital signals in the application of red light optics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.222-229
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• 2009

A noble infrared sensor was studied for passenger conditional detection in vehicle, This research relates to uncooled infrared sensors for detecting the presence, type and temperature of occupants in vehicle. It sense that the occupants purpose to control the smart airbag for safety in the case of adult or child and to control the automatic air conditioning for convenience. This paper described the design and the fabrication of microbolometers which were composed of 2 by 8 elements using the surface micromachining technology. The characteristics of the array were investigated in the spectral region of $8{\sim}12{\mu}m$. The fabricated detectors exhibited the thermal mass of $7.05{\times}10^{-9}\;J/K$, the thermal conductance of $1.03{\times}10^{-6}\;W/K$, the thermal time constant of 6.8 ms, the responsivity of $2.96{\times}10^4\;V/W$ and the detectivity of $1.01{\times}10^9\;cmHz^{1/2}/W$, at the chopper frequency of 10 Hz and the bias current of $4.4{\mu}A$. We could successfully detect the human body condition in the divided zone. As a results, we concluded that microbolometer optimized in this research could be useful for the application of passenger conditional detection in vehicle.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.1005-1009
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• 2008

A noble infrared $\lambda/4$ absorbing structure using metal reflector was studied for uncooled infrared sensors. This paper described the design and the fabrication of IR uncooled detectors which were composed of 21 by 21 elements using the surface micromachining technology. The characteristics of the array were investigated in the spectral region of 4.26 ${\mu}m$. The fabricated detectors exhibited the thermal mass of $9.75\times10^{-9}$ J/K, the thermal conductance of $1.31\times10^{-6}$ W/K, the thermal time constant of 7.4 ms, the responsivity of $1.07\times10^5$ V/W and the detectivity of $1.04\times10^9$ $cmHz^{1/2}/W$, at the chopper frequency of 10 Hz and the bias current of 9.22${\mu}A$. Finally the absorptance efficiency of $\lambda/4$ absorbing structure was about 23.2 % higher than that of absence absorbing structure.

• Korean Journal of Optics and Photonics
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• v.34 no.5
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• pp.202-209
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• 2023

A KRISS-type small integrating sphere with a high spatial radiance uniformity was made using pressed polytetrafluoroethylene (PTFE) and a reflective rod to calibrate the spectral radiance responsivity of absolute radiant thermometers. The spatial radiance uniformity of the KRISS-type small integrating sphere was ±0.009%, five times higher than the best value reported by foreign national metrology institutions thus far. In addition, we improved the spatial radiance uniformity of a commercial sintered PTFE integrating sphere by a factor of 10.

• Korean Journal of Optics and Photonics
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• v.18 no.1
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• pp.1-7
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• 2007

Filter colorimeters have a set of spectral bands for which spectral responsivity is the same as the color matching function defined by CIE (Commission Internationale de I'Eclairage). We have designed a set of color matching function filters denoted by $\bar{x}-filter,\;\bar{y}-filter,\;and\;\bar{z}-filter$. Because the $\bar{x}-function$ has two transmission bands, two $\bar{x}-filters$ are designed to cover the $\bar{x}-function$. To design the filters, we developed a nonlinear least square fit program which determines the thickness of the color glasses by minimizing its spectral mismatch value ($f{_1}'$) to below 3 %. The design has been validated by fabrication of the $\bar{y}-bar$ filter, of which $f{_1}'$ was measured to be 2.8 %. Considering a LCD flat panel display as a device under test, we have calculated the systematic error of the colorimetric measurement using the designed filters.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.213-224
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• 2010

An optically controlled silicon MESFET (OPFET) was fabricated by diffusion process to enhance the quantum efficiency, which is the most important optoelectronic device performance usually affected by ion implantation process due to large number of process induced defects. The desired impurity distribution profile and the junction depth were obtained solely with diffusion, and etching processes monitored by atomic force microscope, spreading resistance profiling and C-V measurements. With this approach fabrication induced defects are reduced, leading to significantly improved performance. The fabricated OPFET devices showed proper I-V characteristics with desired pinch-off voltage and threshold voltage for normally-on devices. The peak photoresponsivity was obtained at 620 nm wavelength and the extracted external quantum efficiency from the photoresponse plot was found to be approximately 87.9%. This result is evidence of enhancement of device quantum efficiency fabricated by the diffusion process. It also supports the fact that the diffusion process is an extremely suitable process for fabrication of high performance optoelectronic devices. The maximum gain of OPFET at optical modulated signal was obtained at the frequency of 1 MHz with rise time and fall time approximately of 480 nS. The extracted transconductance shows the possible potential of device speed performance improvements for shorter gate length. The results support the use of a diffusion process for fabrication of high performance optoelectronic devices.