• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.342.1-342.1
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• 2014

The electrical, optical and structural properties of Ti doped $In_2O_3$ (TIO) ohmic contacts to p-type GaN were investigated using linear facing target sputtering (LFTS) system. Sheet resistance and resistivity of TIO films are decreased with increasing rapid thermal annealing (RTA) temperature. Although the $400^{\circ}C$ and $500^{\circ}C$ annealed samples showed rectifying behavior, the $600^{\circ}C$ and $700^{\circ}C$ annealed samples showed linear I-V characteristics indicative of the formation of an ohmic contact between TIO and p-GaN. The annealing of the contact at $700^{\circ}C$ resulted in the lowest specific contact resistivity of $9.5{\times}10^{-4}{\Omega}cm^2$. Based on XPS depth profiling and synchrotron X-ray scattering analysis, we suggested a possible mechanism to explain the annealing dependence of the properties of TIO layer on rapid thermal annealing temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.521-524
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• 2001

In this letter. we report on the investigation of Ti. Pt/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at $500^{\circ}C$ for 1h. $950^{\circ}C$ for 10 min respectively. The contact resistances were measured using the transmission line model method. which resulted in specific contact resistivities in the $3.5{\times}10^{-3}$ and $6.2{\times}10^{-4}ohm/cm^{2}$, and the physical properties of the contacts were examined using x-ray diffraction. microscopy. AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si. migration of into SiC. Overlayer of Pt had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.521-524
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• 2001

In this letter, we report on the investigation of Ti, Pt/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at 500$^{\circ}C$ for 1h, 950$^{\circ}C$ for 10 min respectively. The contact resistances were measured using the transmission line model method, which resulted in specific contact resistivities in the 3.5x10$\^$-3/ and 6.2x10$\^$-4/ ohm/$\textrm{cm}^2$, and the physical properties of the contacts were examined using x-ray diffraction, microscopy, AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si, migration of into SiC. Overlayer of Pt had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

• 한국세라믹학회지
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• 제31권2호
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• pp.185-193
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• 1994

Effect of Sb2O3 addition on microstructure and the PTCR characteristic was investigated. The range of the Sb2O3 content and the sintering temperature showing semiconducting and PTCR characteristic, were 0.05~0.125 mol%, and over 130$0^{\circ}C$, respectively. We found that PTCR characteristic, that is, room-temperature resistivity and specific resistivity ration were dependent on the microstructure.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 A
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• pp.703-705
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• 2005

접지설계에 있어서 토양의 전기적 특성은 접지극의 형상과 더불어 가장 중요한 설계요소 중 하나이며 이러한 토양의 전기적 특성은 접지극이 매설될 지역의 고유한 저항률, 즉 고유저항률(specific earth resistivity)로 대표되어 왔다. 이처럼 고유저항률에 근거한 수작업 접지설계는 복잡한 구조와 특성을 갖는 실제 토양을 균일한 매질로 등가화하는 절차를 필요로 한다. 본 논문에서는 미얀마 500 kV 송전철탑 수작업 접지설계를 위하여 수평다층토양을 균일매질로 등가화하는 절차를 제시하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.33-36
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• 2004

탄소 도핑$(5{\times}10^{19}\;cm^{-3})$된 p-type GaAsSb 에피층 위에, Ti/Pt/Au, Pd/Au, Pd/Ir/Au를 이용한 다층 오믹 접촉을 제작하였다. MOCVD(metal-organic chemical vapor deposition)를 이용하여 성장시킨 이 p-GaAsSb의 정공 이동도는 탄소의 도핑 농도가 매우 높음에도 불구하고, $50\;cm^2/Vs$로 측정되었다. 오믹 접촉의 전기적 특성을 측정하기 위하여 TLM(Transfer length method)를 이용하였다. Pd/Ir/Au을 이용한 오믹접촉의 specific contact resistivity는 $10^{-8}\;ohm-cm^2$ 보다 작은 수치를, transfer length는 100 nm보다 작은 수치를 보였으며, Ti/Pt/Au을 이용한 ohmic contact의 specific contact resistivity는 $10^{-7|\;ohm-cm^2$ 보다 작은 수치를, transfer length는 400 nm보다 작은 수치를 나타내었다.

• 한국정밀공학회지
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• 제19권3호
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• pp.114-122
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• 2002

Electric conductivities, mechanical properties and friction properties were investigated far graphite-nylon composites impregnated with oil. Specific resistivity of composites containing oil from 2% to 6% were in the range of $10^7 ~10^6 \ohm$ cm, which were applicable for anti-static purpose of composites improved by the impregnation of graphite with 2%. Improvement in the impact strength and friction properties of graphite/nylon composites was achieved by the impregnation of oil. The coefficient of friction of the composites containing graphite from 2% to 4% and oil with 2 - 4% showed much loller than that of virgin nylon. Also the abrasive wear of the oil impregnated graphite composites were decreased about 1/3 - 1/10.

• 대한전자공학회논문지
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• 제26권9호
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• pp.1381-1387
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• 1989

For the fabrication of ohmic contact to p-type GaAs, In Liquid Metal Ions were implanted into p-type GaAs (Zn:1.5x10**19/cm**3). After the samples were processed by Infrared rapid thermal annealing (IRTA0 or Furance Annealing (FA), I-V and specific contact contact resistivity were measured. Specific contact resistivity was found to be 1.7x10**-5 \ulcorner-cm\ulcornerin IRTA 750\ulcorner, 10 sec annealed sample. The surface characteristics of the samples were investigated with SEM, RHEED, AES. From these results we can know that implanted In ions were formed mixing layer of InAs at the surface.

• 지구물리와물리탐사
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• 제13권4호
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• pp.397-406
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• 2010

전기비저항 탐사법은 저수지 누수구간 탐지에 매우 효과적이고 실질적인 물리탐사법이다. 일반적으로 저수지 제체의 마루에서 수행되는 전기비저항 탐사는 저수지가 2차원 구조를 갖고 있다고 가정한다. 하지만 저수지 제체에서 얻어지는 전기비저항 탐사자료는 저수지의 3차원 지형에 의해 크게 영향을 받는다. 본 연구에서는 유한요소법을 사용하는 3차원 전기비저항 탐사 모델링 프로그램을 통하여 저수지의 3차원 구조와 저수지 수위의 변화가 전기비저항 탐사자료에 미치는 영향을 평가하였다. 또한 측선의 위치에 따른 전기비저항 탐사자료를 비교하였으며, 지형보정 기법을 개발하였다. 마지막으로 누수구간이 존재하는 제체에 대한 3차원 모델링 자료에 대하여 2.5차원 역산을 수행하여 2차원 전기비저항 탐사법을 이용한 누수구간 탐지의 가능성을 분석하였다.

• 한국재료학회지
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• 제16권10호
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• pp.629-632
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• 2006

Electrical characteristics of Pt/Ti/Pt/Au and Pd/Zn/Pd/Au contacts to p-type InGaAs grown on an InP substrate have been characterized as a function of the doping concentration and the annealing temperature. The Pt/Ti/Pt/Au contacts produced the specific contact resistance as low as $2.3{\times}10^{-6}{\Omega}{\cdot}cm^2$, when heat-treated at an annealing temperature of $400^{\circ}C$. Comparison of the Pt/Ti/Pt/Au and Ti/Pt/Au contacts showed that the first Pt layer plays an important role in reducing the contact resistivity probably by lowering energy barrier at the metal-semiconductor interface. For the Pd/Zn/Pd/Au contacts, the contact resistivity remained virtually unchanged with increasing annealing temperature. The specific contact resistivity as low as $4.7{\times}10^{-6}{\Omega}{\cdot}cm^2$ was obtained. The results indicate that the Pt/Ti/Pt/Au and Pd/Zn/Pd/Au schemes could be potentially important for the fabrication of InP-based optoelectronic devices, such as photodetector and optical modulator.