• Title/Summary/Keyword: Space-Charge-Limited Current

Search Result 57, Processing Time 0.021 seconds

A Study on the Electrical Conduction of Plasma-Co-Polymerized Organic Thin Film (플라즈마 공중합 유기 박막의 전기 전도에 관한 연구)

  • 육재호;박재윤;이덕출;박상현
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1988.10a
    • /
    • pp.108-111
    • /
    • 1988
  • In this study, the electrical conduction properties of plasma-polymerized (MMA+Styrene) thin film have been investigated. The measurements of transient conduction currents were carried out in the temperature of 50 to 150$^{\circ}C$ at electric field of 10$^4$to 10$\^$6/V/cm. The electric field-current density characteristic curves were divided into three regions-ohmic region, child region, sudden-increasing region. It is shown that the conduction mechanism of this thin film is in good agreement with SCLC(space charge limited current) model by applying the high field conduction theories.

  • PDF

Operating Characteristics of Amorphous GeSe-based Resistive Random Access Memory at Metal-Insulator-Silicon Structure (금속-절연층-실리콘 구조에서의 비정질 GeSe 기반 Resistive Random Access Memory의 동작 특성)

  • Nam, Ki-Hyun;Kim, Jang-Han;Chung, Hong-Bay
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.29 no.7
    • /
    • pp.400-403
    • /
    • 2016
  • The resistive memory switching characteristics of resistive random access memory (ReRAM) using the amorphous GeSe thin film have been demonstrated at Al/Ti/GeSe/$n^+$ poly Si structure. This ReRAM indicated bipolar resistive memory switching characteristics. The generation and the recombination of chalcogen cations and anions were suitable to explain the bipolar switching operation. Space charge limited current (SCLC) model and Poole-Frenkel emission is applied to explain the formation of conductive filament in the amorphous GeSe thin film. The results showed characteristics of stable switching and excellent reliability. Through the annealing condition of $400^{\circ}C$, the possibility of low temperature process was established. Very low operation current level (set current: ~ ${\mu}A$, reset current: ~ nA) was showed the possibility of low power consumption. Particularly, $n^+$ poly Si based GeSe ReRAM could be applied directly to thin film transistor (TFT).

Characteristics of Al/$BaTa_2O_6$/GaN MIS structure (Al/$BaTa_2O_6$/GaN MIS 구조의 특성)

  • Kim, Dong-Sik
    • 전자공학회논문지 IE
    • /
    • v.43 no.2
    • /
    • pp.7-10
    • /
    • 2006
  • A GaN-based metal-insulator-semiconductor (MIS) structure has been fabricated by using $BaTa_2O_6$ instead of conventional oxide as insulator gate. The leakage current o) films are in order of $10^{-12}-10^{-13}A/cm^2$ for GaN on $Al_2O_3$(0001) substrate and in order of $10^{-6}-10^{-7}A/cm^2$ for GaN on GaAs(001) substrate. The leakage current of thses films is governed by space-charge-limited current over 45 MV/cm in case of GaN on $Al_2O_3$(0001) substrate and by Poole-Frenkel emission in case of GaN on GaAs(001).

Titanium Dioxide Sol-gel Schottky Diodes and Effect of Titanium Dioxide Nanoparticle

  • Maniruzzaman, Mohammad;Zhai, Lindong;Mun, Seongcheol;Kim, Jaehwan
    • Journal of Electrical Engineering and Technology
    • /
    • v.10 no.6
    • /
    • pp.2343-2347
    • /
    • 2015
  • This paper reports the effect of Titanium dioxide (TiO2) nanoparticles on a TiO2 sol-gel Schottky diode. TiO2 nanoparticles were blended with TiO2 sol-gel to fabricate the Schottky diode. TiO2 nanoparticles showed strong anatase and rutile X-ray diffraction peaks. However, the mixture of TiO2 sol-gel and TiO2 nanoparticles exhibited no anatase and rutile peaks. The forward current of the Schottky diode drastically increased as the concentration of TiO2 nanoparticles increased up to 10 wt. % and decreased after that. The possible conduction mechanism is more likely space charge limited conduction.

Organic Bistable Switching Memory Devices with MeH-PPV and Graphene Oxide Composite

  • Senthilkumar, V.;Kim, Yong Soo
    • Transactions on Electrical and Electronic Materials
    • /
    • v.16 no.5
    • /
    • pp.290-292
    • /
    • 2015
  • We have reported about bipolar resistive switching effect on Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]:Graphene oxide composite films, which are sandwiched between aluminum and indium tin oxide electrodes. In this case, I-V sweep curve showed a hysteretic behavior, which varied according to the polarity of the applied voltage bias. The device exhibited excellent switching characteristics, with the ON/OFF ratio being approximately two orders in magnitude. The device had good endurance (105 cycles without degradation) and long retention time (5 × 103 s) at room temperature. The bistable switching behavior varied according to the trapping and de-trapping of charges on GO sites; the carrier transport was described using the space-charge-limited current (SCLC) model.

Electrical Conduction and Resistance Switching Mechanisms of Ag/ZnO/Ti Structure

  • Nguyen, Trung Do;Pham, Kim Ngoc;Tran, Vinh Cao;TuanNguyen, Duy Anh;Phan, Bach Thang
    • Journal of IKEEE
    • /
    • v.17 no.3
    • /
    • pp.229-233
    • /
    • 2013
  • We investigated electrical conduction and resistance switching behavior of the Ag/ZnO/Ti structures for random access memory devices. These films were prepared on glass substrate by dc sputtering technique at room temperature. The resistance switching follows unipolar switching mode with small switching voltages (0.4 V - 0.6 V). Two electrical conduction mechanisms dominating the LRS and HRS are Ohmic and trap-controlled space charge limited current, respectively. These both conductions are consistent with the filamentary model. Based on the filamentary model, the switching mechanism was also interpreted.

The crystallinity and electrical characteristics of low density polyetylene thin film (저밀도 폴리에틸렌 필림의 결정화도 및 전기적 특성)

  • 윤중락;권정열;이헌용
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1996.11a
    • /
    • pp.164-168
    • /
    • 1996
  • The relation between crystallinity and thermal history in low density polyethylene thin films and their effect on electric conduction phenomena and dielectric breakdown was studied. The low density polythylene thin films obtained by the solution growth method heat-treated at 140[$^{\circ}C$] for 2 h and subsequently cooling to various ways. The degree of crystallinity was estimated by the X-ray diffraction measurement for the specimen of slowly cooling, ICE quenching and liquid nitrogen quenching. The result shows that the crystallinity decreases become faster as the cooling speed increased, and that conduction phenomenon is governed by the space charge limited current in high field. It was found that the dielectric breakdown field increases with an increase in cooling speed and test number in self-healing breakdown method.

  • PDF

Molecular alignment effect of para-sexiphenyl organic electroluminescent devices (Para-sexiphenyl 유기 전기발광소자의 배향 처리 효과)

  • Lee, Yong-Soo;Lee, Jae-Hyuk;Park, Jae-Hoon;Choi, Jong-Sun
    • Proceedings of the KIEE Conference
    • /
    • 2000.11c
    • /
    • pp.443-445
    • /
    • 2000
  • The high mobilitie sallow larger current to be reached under operation in the space charge limited conduction region, hence facilitate access to higher luminance as required for passive matrix panel. In this work, we have investigated the molecular alignment control effect of organic electroluminescent devices. we aligned the p-sexiphenyl(6p) using a simple rubbing treatment. We studied the anisotropic optical properties and electrical characteristics.

  • PDF

AC dielectric response of poly(p-phenylenevinylene) light emitting devices (주파수 의존성에 따른 고분자 LED의 유전 분산 거동에 관한 연구)

  • 이철의;김세헌;장재원;김상우
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2000.11a
    • /
    • pp.149-152
    • /
    • 2000
  • AC impedance measurements on poly-p-phenylenevinylene (PPV) LEDs in the frequency range between 10 Hz and 10$\^$6/ Hz were carried out. The complex-plane impedance spectra indicate that PPV devices can be represented by equivalent circuits that corresponds to the bulk and interfacial regions at high and low frequencies, respectively. As a result of complex impedance analysis through the separation of bulk and interfacial region impedances, increase of forward bias in Al/PPV/ITO devices gave rise to relative decrease of the interfacial region impedance. Above the electric field of 10$\^$6/ V/cm the PPV device showed a space charge limited current (SCLC) conduction. The dependence of the transport mechanism and dielectric properties on the applied bias voltage is discussed.

  • PDF

Characteristics of Electrical Conduction Mechanism of OLED with Various Temperature (유기 발광 다이오드의 온도에 따른 전도특성)

  • Lee, Dong-Gyu;Kim, Tae-Wan;Lee, Joon-Ung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2005.05a
    • /
    • pp.197-200
    • /
    • 2005
  • We have studied conduction mechanism that is interpreted in terms of space charge limited current (SCLC) region and tunneling region. The OLEDs are based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole transport, tris (8-hydroxyquinolinoline) aluminum(III) $(Alq_3)$ as an electron injection and transport and emitting layer. We manufactured reference structure that has in $ITO/TPD/Alq_3/Al$. Buffer layer effects were compared to reference structure. And we have analyzed out electrical conduction mechanism in $ITO/Alq_3/Al$ device with various temperature.

  • PDF