• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.2
• /
• pp.312-317
• /
• 2015

In this paper, the RF characteristics of multi-finger MOSFETs were improved by decreasing the parasitic capacitance in spite of increased gate resistance in a 90-nm CMOS technology. Two types of device structures were designed to compare the parasitic capacitance in the gate-to-source ($C_{gs}$) and gate-to-drain ($C_{gd}$) configurations. The radio frequency (RF) performance of multi-finger MOSFETs, such as cut-off frequency ($f_T$) and maximum-oscillation frequency ($f_{max}$) improved by approximately 10% by reducing the parasitic capacitance about 8.2% while maintaining the DC performance.

• Journal of IKEEE
• /
• v.18 no.4
• /
• pp.625-629
• /
• 2014

This study derives the asymptotic phase noise formula of the oscillators perturbed by the colored noises. Based on the derived formula, this study presents a sub-1V series-tuned differential Colpitts VCO. The ADS simulation result on the phase noise shows that the presented VCO exhibits about 3dBc/Hz lower phase noise at the 1MHz offset frequency from the oscillation frequency of 4.8GHz than the existing series-tuned differential Colpitts VCO with the inductor current sources.

• 한국가시화정보학회:학술대회논문집
• /
• 2004.12a
• /
• pp.147-155
• /
• 2004

Self-excited noise generation from laminar flames in thin annular jets of methane/air premixture has been investigated experimentally. Various flames were observed in this flow configuration, including conical shape flames, ring shape flames, steady crown shape flames, and oscillating crown shape flames. Self-excited noise with the total sound pressure level of about 70dB was generated from the oscillating crown shape flames for the equivalence ratio larger than 0.95. Sound pressure and $CH^*$ chemiluminescence were measured by using a microphone and a photomultiplier tube. The frequency of generated noise was measured as functions of equivalence ratio and premixture velocity. A frequency doubling phenomena have also been observed. The flame shape during flame oscillation was reconfirmed by a synchronized PIV experiment. The velocity and pressure field were obtained from PIV. The minimum pressure was formed near the edge of flame representing circulation. By comparing the results of sound pressure, flame luminosity and PIV, the noise source can be attributed to the flame front fluctuation near the edge of the oscillating crown-shape flames.

• Journal of electromagnetic engineering and science
• /
• v.15 no.2
• /
• pp.82-88
• /
• 2015

The magnetron, a vacuum tube, is currently the usual high-power microwave power source used for microwave heating. However, the oscillating frequency and output power are unstable and noisy due to the low quality of the high-voltage power supply and low Q of the oscillation circuit. A heating system with enhanced reliability and the capability for control of chemical reactions is desired, because microwave absorption efficiency differs greatly depending on the object being heated. Recent studies on microwave high-efficiency power amplifiers have used harmonic processing techniques, such as class-F and inverse class-F. The present study describes a high-efficiency 100 W GaN-HEMT amplifier that uses a harmonic processing technique that shapes the current and voltage waveforms to improve efficiency. The fabricated GaN power amplifier obtained an output power of 50.4 dBm, a drain efficiency of 72.9%, and a power added efficiency (PAE) of 64.0% at 2.45 GHz for continuous wave operation. A prototype microwave heating system was also developed using this GaN power amplifier. Microwaves totaling 400 W are fed from patch antennas mounted on the top and bottom of the microwave chamber. Preliminary heating experiments with this system have just been initiated.

• Carbon letters
• /
• v.21
• /
• pp.8-15
• /
• 2017

The thermoelectric Seebeck and Peltier effects of a single walled carbon nanotube (SWCNT) quantum dot nanodevice are investigated, taking into consideration a certain value of applied tensile strain and induced ac-field with frequency in the terahertz (THz) range. This device is modeled as a SWCNT quantum dot connected to metallic leads. These two metallic leads operate as a source and a drain. In this three-terminal device, the conducting substance is the gate electrode. Another metallic gate is used to govern the electrostatics and the switching of the carbon nanotube channel. The substances at the carbon nanotube quantum dot/metal contact are controlled by the back gate. Results show that both the Seebeck and Peltier coefficients have random oscillation as a function of gate voltage in the Coulomb blockade regime for all types of SWCNT quantum dots. Also, the values of both the Seebeck and Peltier coefficients are enhanced, mainly due to the induced tensile strain. Results show that the three types of SWCNT quantum dot are good thermoelectric nanodevices for energy harvesting (Seebeck effect) and good coolers for nanoelectronic devices (Peltier effect).

• Bulletin of the Society of Naval Architects of Korea
• /
• v.24 no.2
• /
• pp.47-54
• /
• 1987

Linear and nonlinear hydrodynamic force, which acts on submerged circular and eilliptic cylinders in oscillations as well as in advancing motion, are investigated as an initial-boundary value problem using a numerical method, which makes use of the source distribution on the body surface and the spectral method for treating the free surface waves. In the numerical code developed here, the boundary condition at the body surface is linearized. Using the numerical code so attained, nonlinear effects for different forward speeds and of the large-amplitude motion are computed. One of the major findings is that, when the forward speed is large, the added mass has its minimum and the damping force change rapidly around the frequency corresponding to the speed-frequency parameter, $\tau$=0.25, Compared to the result of Grue's [10], who used linear theory to get abrupt changes in values of the added mass and the damping force at the frequency corresponding to $\tau$=0.25, the present study, which takes nonlinear effects into account, shows much smoother variations near the frequency.

• Progress in Superconductivity and Cryogenics
• /
• v.20 no.4
• /
• pp.55-59
• /
• 2018

Currently, the development of industry makes needs larger electric supply. Providers must consider the efficiency about losses and reliability of the system. In this case, DC power system can save electrical energy; long-distance transmission line losses. Relevance to switch technology with a voltage-source converter (VSC) in AC-DC conversion system have been researched. But, protection device of DC-link against fault current is still needed to study much. VSC DC power system is vulnerable to DC-cable short-circuit and ground faults, because DC-link has a huge size of capacitor filter which releases extremely large current during DC faults. Furthermore, DC has a fatal flaw that current zero crossing is nonexistence. To interrupt the DC, several methods which make a zero crossing is used; parallel connecting self-excited series LC circuit with main switch, LC circuit with power electronic device called hybrid DC circuit breaker. Meanwhile, self-excited oscillator needs a huge size capacitor that produces big oscillation current which makes zero crossing. This capacitor has a quite effective on the price of DCCB. In this paper, hybrid self-excited type superconducting DCCB which are using AC circuit breaker system is studied by simulation tool PSCAD/EMTDC.

• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.67 no.4
• /
• pp.214-220
• /
• 2018

Light sources induced by gas discharge using rare gases have been widely used in the thin film deposition, the surface modification and the polymer etching. A dielectric barrier discharge (DBD) has been developed in order to consistently emit light and control the wavelength of the emission light. However, much research on the characteristics of the movement of discharge particles is required to improve the efficiency of the light lamp and the life-time of the light apparatus in detail. In this paper, we developed a He DBD discharge simulation tool and investigated the characteristics of discharge particles which were electrons, two positive ions ($He^+$, $He_2^+$) and 5 excited particles ($He^*(1S)$, $He^*(3S)$, $He^*$, $He^{**}$, $He^{***}$). The discharge currents showed the transition from pulse mode to continuous mode with the increase of power. With the accumulated charges on the barrier walls, the discharge current was rapidly increased and caused oscillation of the discharge voltage. As the gas pressure increased, $He_2^+$ and $He^*(3S)$ became the dominant activated particles. The input power was mostly consumed by electrons and $He_2^+$ ion. And the change curve showed that power consumption by electrons increased more with gas pressure than with source voltage or frequency.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.10
• /
• pp.14-22
• /
• 2010

The source/channel/drain regions are formed by ion implantation with different dopant types of $n^+/p^{(+)}/n^+$ in the fabrication of the conventional n-type metal-oxide-semiconductor field effect transistor(NMOSFET). In implementing the ultra-small devices with channel length of sub-30 nm, in order to achieve the designed effective channel length accurately, low thermal budget should be considered in the fabrication processes for minimizing the lateral diffusion of dopants although the implanted ions should be activated as completely as possible for higher on-current level. Junctionless (JL) MOSFETs fully capable of the the conventional NMOSFET operations without p-type channel for enlarging the process margin are under researches. In this paper, the optimum design of the JL MOSFET based on silicon nanowire (SNW) structure is carried out by 3-D device simulation and the basic radio frequency (RF) characteristics such as conductance, maximum oscillation frequency($f_{max}$), current gain cut-off frequency($f_T$) for the optimized device. The channel length was 30 run and the design variables were the channel doping concentration and SNW radius. For the optimally designed JL SNW NMOSFET, $f_T$ and $f_{max}$ high as 367.5 GHz and 602.5 GHz could be obtained, respectively, at the operating bias condition $V_{GS}$ = $V_{DS}$ = 1.0 V).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.16 no.5 s.96
• /
• pp.482-487
• /
• 2005

In this paper, we propose the control method of output impedance of each cascode unit cell of distributed amplifier by connecting varactors in the gate-terminal of common gate. Compared to common source unit cell, cascode unit cell has many advantages such as high gain and high output impedance as well as negative resistance loading. But if the transistor model which is used in design is inaccurate and process parameter is changed, oscillation sometimes can occur at band edge in which the gain start to drop. Therefore, we need control circuit which can prevent oscillation, although the circuit has already fabricated, and varactor connected to gate-terminal of common gate of cascode gain cell can play that part. Measured result of fabricated distributed amplifier shows the capability of contol of gain characteristic by adjusting of value of varactors, this can guarantee the stability of the circuit. The gain is $8.92\pm0.82dB$ over 49 GHz, the group delay is $\pm9.3 psec$ over 41 GHz. All transistor which has $0.15{\mu}m$ gate length is GaAs based p-HEMT, and distributed amplifier is put together with 4 stages.