• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.77-85
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• 1999

By assuming a linearly graded depletion edge approximation in the intrinsic MOS region and by taking into account the mobility variation dependent on both lateral and vertical fields, a physics-based analytical model for a short-channel(n-channel) MOSFET is suggested. Derived expressions for the threshold voltage and the drain current of typical MOSFET is structures could be used in a unified manner for all operating range. The threshold voltage was calculated by changing following variables : channel length, drain-source voltage, source-substrate voltage, p-substrate doping level, and oxide thickness. It is shown that the threshold voltage decreases almost exponentially as the channel length decreases. In addition, the short-channel threshold voltage roll-off, the channel length modulation and the electron mobility degradation can be derived within a satisfactory accuracy.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.67.1-67.1
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• 2012

Graphene has attracted much attention for future nanoelectronics due to its superior electrical properties. Owing to its extremely high carrier mobility and controllable carrier density, graphene is a promising material for practical applications, particularly as a channel layer of high-speed FET. Furthermore, the planar form of graphene is compatible with the conventional top-down CMOS fabrication processes and large-scale synthesis by chemical vapor deposition (CVD) process is also feasible. Despite these promising characteristics of graphene, much work must still be done in order to successfully develop graphene FET. One of the key issues is the process technique for gate dielectric formation because the channel mobility of graphene FET is drastically affected by the gate dielectric interface quality. Formation of high quality gate dielectric on graphene is still a challenging. Dirac voltage, the charge neutral point of the device, also strongly depends on gate dielectrics. Another performance killer in graphene FET is source/drain contact resistance, as the contact resistant between metal and graphene S/D is usually one order of magnitude higher than that between metal and silicon S/D. In this presentation, the key issues on graphene-based FET, including organic-inorganic hybrid gate dielectric formation, controlling of Dirac voltage, reduction of source/drain contact resistance, device structure optimization, graphene gate electrode for improvement of gate dielectric reliability, and CVD graphene transfer process issues are addressed.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.11
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• pp.1431-1439
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• 2016

In this paper, we propose a new location service and location-based routing for data dissemination from a source to a mobile group sink in less energy consumption of the sensor node. Unlike the existing protocols, the proposed protocol uses a leader sink instead of a group area as the location information to represent a mobile sink group. The proposed protocol also uses grid leaders on virtual grid structure to support sink mobility in location service. By using a leader sink as a representative and grid leaders for mobility supporting, the proposed protocol can exploit an efficient hierarchical location service and data dissemination method without using flooding. Accordingly, the proposed protocol carries out upper layer location services and data dissemination between a leader sink and a source and lower layer location services and data dissemination between the leader sink and member sinks. Simulation results demonstrate that the proposed protocol achieves energy-efficiency.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38B no.1
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• pp.63-71
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• 2013

In order to support mobility for sink groups, it is important to get the current location of a mobile sink group and then to offer the location to a source. Typically, previous works calculate a region including all member sinks by flooding; then, it notifies this region information to a source. However, flooding and location updates are periodically performed regardless of the group movement so that it causes considerable control overhead. In this paper, we propose an energy-efficient scheme supporting mobile sink groups. The proposed scheme obtains a location of a group without flooding. It exploits the inherent property of mobile sink groups which could approximate entire group movement by only partial member sinks movement. Also, the scheme learns group location by back-propagation learning method through exploiting overhearing feature in wireless communication environment. Our simulation studies show that the proposed scheme significantly improves in terms of energy consumption compared to the previous work.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.12
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• pp.1-9
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• 2000

A new method, the external resistance method (ERM method), is proposed for accurate extraction of the gate bias-dependent effective channel carrier mobility (${\mu}_{eff}$) and separated parasitic source/drain resistances ($R_S$ and $R_D$) of n-channel MOSFET's. The proposed ERM method is applied to n-channel LDD MOSFETs with two different gate lengths ($W_m/L_m=30{\mu}m/0.6{\mu}m,\;30{\mu}m/1{\mu}m$) in the linear mode of current-voltage characteristics ($I_D-V_{GS},\;V_{DS}$). We also considered gate voltage dependence of separated $R_2$ and $R_D$ in the accurate modeling and extraction of effective channel carrier mobility. Good agreement of experimental data is observed in submicron n-channel LDD MOSFETs. Combining with capacitance-voltage characteristics, the ERM method is expected to be very useful for accurate and efficient extraction of ${\mu}_{eff},\;R_D,\;R_S$, and other characteristic parameters in both symmetric and asymmetric structure MOSFET's in which parasitic resistances are critical to the improvement of high speed performance and reliability.

• Journal of KIISE:Information Networking
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• v.28 no.4
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• pp.586-601
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• 2001

We propose a mesh based multicast routing protocol referred to as HMMRP for ad-hoc networks. In HMMRP, a limited number of sources are selected as core sources, and the rest of the sources of a multicast group are connected to one of those core sources. The sources and the receivers of a multicast group are also connected through per source trees. In HMMRP, the data delivery mesh of a multicast group are composed of the nodes on these paths, and are reconfigured at regular intervals. Furthermore, each mesh member that lies on the paths between the sources and the core sources as well as be-tween the core sources and the receivers keeps checking if there is a symptom of mesh separation around itself. When a mesh member finds such symptom, it tries to patch itself to the mesh with a local flooding. As a result, the part of the data delivery mesh on those paths are kept connected with a lot higher probability than the rest of the data delivery mesh. That is, for a certain source receiver pair, it is very likely that at least there exists a data delivery path that route from the source to a core source and then to the receiver. Therefore, HMMRP may provide very high data delivery ratio without frequent entire data delivery mesh reconfiguration even when the nodal mobility is high. Simulation results show that HMMRP shows relatively little performance degradation with respect to mobility. Furthermore, the performance degradation with respect to mobility is even smaller when the size of the multicast group becomes larger.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.2
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• pp.37-41
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• 2018

As individuals generate and share various content anytime and anywhere, new networking architectures, such as content-centric networking (CCN) using the content name as a packet identifier, have been in the spotlight recently. However, the current CCN hardly takes into account node mobility problems, especially the mobility of content sources. The movement of content sources causes long delivery latency and long service disruptions. To solve that, the tunneling-based redirection scheme was proposed. However, the tunneling-based scheme requires a location-update procedure whenever the network changes, which creates many control messages and causes long latency. So, this paper presents hierarchical mobility management of mobile CCN to reduce the number of control messages and handoff latency. Performance evaluation shows that the proposed scheme can provide low control overhead, which results in network scalability.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.285-287
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• 2016

이황화 몰리브덴(Molybdenum disulfide: $MoS_2$)을 채널(Channel) 물질로 이용하여 metal-oxide-semiconductor(MOS) 구조를 제작하고, 효율적인 제작과정을 제시하였고 특히, Source/Drain의 Doping concentration을 조절하여 효과적인 $MoS_2$ Transistor를 제작 및 시뮬레이션 하였다. 그 후 여러 MOSFET의 특성 분석을 통하여 소자로서의 기능을 확인해보았다. 그리고 특히 채널의 전기적인 특성을 분석하고 채널 내 그리고 contact 사이의 저항 및 mobility의 특성을 알아보았는데, 그 중 Source/Drain Doping Effect와 performance 분석을 통해, 최적화된 $MoS_2$ Transistor를 찾아보았다.

• Annual Conference of KIPS
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• 2004.05a
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• pp.1529-1532
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• 2004

A Mobile Ad Hoc NETwork (MANET) is a collection of wireless mobile nodes that forms a temporary network without the need for any existing network infrastructure or centralized administration. Therefore, such a network is designed to operate in a highly dynamic environment due to node mobility. In mobile ad hoc network, frequent topological changes cause routing a challenging problem and without the complete view of the network topology, establishing the shortest path from the source node to the destination node is difficult. In this paper, we suggest a routing approach which utilizes location information to setup the shortest possible path between the source node and the destination node. Location information is obtained through Global Positioning System (GPS) and this geographical coordinate information of the destination node is used by the source node and intermediate nodes receiving route request messages to determine the shortest path to the destination from current node.

• Journal of the Semiconductor & Display Technology
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• v.23 no.3
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• pp.35-38
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• 2024

High efficiency evaporation source is developed to perform a vacuum deposition process in which a deposition material is heated and vaporized to eject from a solid state to a gaseous state. In order to obtain a uniform thin film, conditions such as the structure of the effusion cell, the distance between the effusion cell and the substrate, nozzle size, and evaporation angle must be optimized. In this experiment, organic material Alq3 and metal Al thin film deposition process was performed using the effusion cell and thin film characteristics was analyzed.