• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.14 no.11
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• pp.923-930
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• 2002

Cooling characteristics of a parallel channel with protruding heat sources using convection and conduction heat transfer are studied numerically. A two-dimensional model has been developed for numerical prediction of transient, compressible, viscous, laminar flow, and conjugate heat transfer between parallel plates with uniform block heat sources. The finite volume method is used to solve the problem. The assembly consists of two channels formed by two covers and one printed circuit board which has three uniform heat source blocks. Six different cooling methods are considered to find out the most efficient cooling method in a given geometry and heat sources. The velocity and temperature fields of cooling medium, the temperature distribution along the block surface, and the maximum temperature in each block are obtained. The results are compared to examine the cooling characteristics of the different cooling methods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.242-245
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• 1997

Co single layer and Co/Ti used to form a CoSi$_2$ contact. We fabricated the n+/p diodes with this CoSi$_2$ contact as diffusion source of As. The diodes wish CoSi$_2$ formed by Co/ri bilayer had more Bo7d electrical characteristics than CoSi$_2$ formed by Co single layer. This shows that the flatness of interface which is a parameters to affect the diodes\` electrical characteristics. And the electrical characteristics of diodes are more good when the second thermal activation processing temperature was low as much as 50$0^{\circ}C$ than the temperature high over than 80$0^{\circ}C$, it was thought as that the silicide was degradated at high temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.557-562
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• 2000

160nm thick amorphous Si and polycrystalline Si were each deposited on to 10nm thick SiO$_2$, Co monolayer and Co/Ti bilayer were sequentially evaporated to form Co-polycide. Then MOS capacitors were fabricated by BF$_2$ ion-implantation. The characteristics of the fabricated capacitor samples depending upon the drive-in annel conductions were measured to study the effects of thermal stability of CoSi$_2$and dopant redistribution on electrical properties of Co-polycide gates. Results for capacitors using Co/Ti bilayer and drive-in annealed at 80$0^{\circ}C$ for 20~40sec. showed excellent C-V characteristics of gate electrode.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.577-595
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• 2017

${\bullet}$ Silicon Carbide (SiC) had excellent material properties as the base material for next generation of power semiconductor. In developing SiC MOSFET, gate oxide reliability issues had to be first overcome before commercial application. Besides, a high and stable gate-source voltage threshold $V_{GS(th)}$ is also an important parameter for operation robustness. SiC MOSFET with such characteristics can directly use existing high-speed IGBT gate driver IC's. ${\bullet}$ The linear voltage drop characteristics of SiC MOSFET will bring lower conduction loss averaged over full AC cycle compared to similarly rate IGBT. Lower switching loss enable higher switching frequency. Using package with auxiliary source terminal for gate driving will further reduce switching losses. Dynamic characteristics can fully controlled by simple gate resistors. ${\bullet}$ The low switching losses characteristics of SiC MOSFET can substantially reduce power losses in high switching frequency operation. Significant power loss reduction is also possible even at low switching frequency and low switching speed. in T-type 3-level topology, SiC MOSFET solution enable three times higher switching freqeuncy at same efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.379-382
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• 2000

The characteristics of Xe discharge lamp(Mercuryless lamp) are described in this paper. In this paper, FFL is operated by sine wave and pulsed source. We apply V-Q Lissajous' figure for the discharge measurements of FFL which has the electrodes covered with dielectric. When FFL is operated by sine wave source, the characteristics are similar to DBD(Dielectric Barrier Discharge) and SD(Silent Discharge). And we compared the characteristics of FFL which is operated with sine wave and pulsed discharge by using V-Q Lissajous' figure method. When FFL is operated with pulsed, the discharge current flows after the applied voltage is risen. As the duty ratio increases the electric field becomes strong and much more xenon ions are produced. And the number of metastable xenon atoms seem to increase, therefore, the phosphor radiation after the cut off of voltage increases compared with the first peak of radiation. Consequently, the 172㎚ radiation becomes strong as the duty ratio increases.

• 한국정보통신설비학회:학술대회논문집
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• 2008.08a
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• pp.309-312
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• 2008

We study signal characteristics of the injection-locked Fabry-Perot laser diodes(FP-LDs) for the development of a costeffective WDM-PON solution. The output power and system performance of WDM-PON using injection locked FP-LD are depend on optical characteristics of injection source. The effect of optical power and polarization state of the injection source experimentally investigated. We also measured BER characteristics of the directly modulated FPLD and its power penalty at the BER of $10^{-9}$.

• Journal of Advanced Marine Engineering and Technology
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• v.28 no.1
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• pp.46-55
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• 2004

Thermal characteristics of the various cooling methods in electronic equipment are studied numerically. A common chip cooling system is modeled as a parallel channel with protruding heat sources. A two-dimensional model has been developed for the numerical analysis of compressible. viscous. laminar flow. and conjugate heat transfer between parallel plates with uniform block heat sources. The finite volume method is used to solve this problem. The assembly consists of two channels formed by two covers and one printed circuit board that is assumed to have three uniform heat source blocks. Various cooling methods are considered to find out the efficient cooling method in a given geometry and heat sources. The velocity and the temperature fields. the local temperature distribution along the surface of blocks. and the maximum temperature in each block are obtained. The results are compared to examine the thermal characteristics of the different cooling methods both quantitatively and qualitatively.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2004.11a
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• pp.265-268
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• 2004

Impact sounds, such as those created by footsteps, the dropping of an object or the moving of furniture, can be a source of great annoyance in residential buildings. Running and jumping impact sound by child are one of the most irritating noises in an apartment buildings. It's necessary to know that the impact force characteristics of real impact source in an apartment buildings. This study aims to investigate the impact force characteristics and impact force time of running and jumping by child. This study cud out investigation through the 155 children in school. The results of this study is that jumping impact force is greater than running impact force but impact force time is lower than that.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.4
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• pp.93-96
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• 2000

Microchannel plates (MCPs) have been developed by introducing new materials and process technologies. Main body was made of alumina by programmable punching, laminating, and firing. The channel walls of pore arrays of an MCP were deposited with thin films by electroless copper plating and sol-gel process. Our MCP has advantages such as easy fabrication, durability, high temperature endurance, and applicability to the large size comparing with the conventional MCPs. Experiments on the brightness of an MCP incorporated FED revealed that the FED with a MCP is three to four times brighter than a conventional FED. Moreover, the focusing in a FED is improved. Incorporating an MCP into a FED is one of promising methods to enhance the characteristics of the FED. In addition, amplification yield of the MCP is measured for varying the aspect ratio and the input current.

• Journal of Electrical Engineering and Technology
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• v.12 no.1
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• pp.329-334
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• 2017

This paper discusses the near field characteristics of a dipole source located near conducting metallic walls from an electromagnetic compatibility (EMC) point of view. An integral equation for a dipole source near a metallic wall is derived and solved by applying Galerkin's method of moments (MoM). The results show that in the regions outside the dipole source, total electric near fields decrease gradually in magnitude with an increasing field point from the dipole source. But in the regions inside the dipole source, total electric near fields decrease rapidly with a dipole position of $h{\leq}0.3{\lambda}$. For a dipole position of $h{\geq}0.7{\lambda}$, the peaks and nulls of the total near electric field occur periodically in the regions inside the dipole source, and the fluctuation period is almost $0.5{\lambda}$. The worst position for a receptor location is along the z-axis, and a range of a half-magnitude of the maximum near electric field in the principal H-plane is about two times broader than that of the principal E-plane. Experimental measurements are also presented to validate the theory.