• 제목/요약/키워드: Solution annealing

검색결과 501건 처리시간 0.029초

슈퍼 듀플렉스 내식강의 부식특성 및 경도에 미치는 텅스텐 첨가의 영향 (Influence of W Additions on the Corrosion Characteristics and Hardness of Super Duplex Stainless Steel)

  • 한윤기;김정민
    • 열처리공학회지
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    • 제36권5호
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    • pp.261-269
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    • 2023
  • This study aims to investigate the effects of tungsten additions on the microstructure, corrosion characteristics, and hardness of super duplex stainless steel heat-treated at two different annealing temperatures. Under the annealing temperature of 1100℃, the microstructure of the stainless steels consisted mainly of ferrite, while under the annealing temperature of 1000℃, significant amounts of austenite and secondary phases were also observed. In terms of corrosion characteristics in 3.5 wt%NaCl solution, there was not a significant difference due to W addition at the 1100℃ conditions. However, at the 1000℃, a tendency of decreased corrosion resistance was observed with increasing the tungsten content. On the other hand, the micro-hardness of the stainless steel heat-treated 1000℃ showed an increasing trend with tungsten addition. This increase can be mainly attributed to the higher fraction of secondary phases, primarily sigma, known for their high hardness.

산성 염화물 환경에서 F53 슈퍼 듀플렉스 스테인리스강의 2 상간의 공식 거동 연구 (Investigation of the pitting corrosion behavior between the constituent phases in F53 super duplex stainless steel in acidified chloride environments)

  • 김순태;공경호;이인성;박용수;이종훈;김두현
    • Corrosion Science and Technology
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    • 제13권3호
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    • pp.95-101
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    • 2014
  • The pitting corrosion behaviors between the constituent phases in F53 super duplex stainless steel (SDSS) in acidified chloride environments were investigated using a critical pitting corrosion temperature test, a potentiodynamic anodic polarization test, and the microstructure analyses through a SEM-EDS and a SAM. As the solution annealing temperature decreased from $1150^{\circ}C$ to $1050^{\circ}C$, the ${\gamma}$-phase fraction increased whereas the ${\alpha}$-phase fraction decreased. The pitting potential and the critical pitting temperature increased with a decrease of solution annealing temperature, thereby increasing the resistance to pitting corrosion. The pitting corrosion of the SDSS was selectively initiated at the ${\alpha}$-phases because the PREN (pitting resistance equivalent number, PREN = %Cr+3.3%Mo+30%N) value of the ${\gamma}$-phase is much larger than that of the ${\alpha}$-phase, irrespective of the solution annealing temperature. The pitting corrosion was finally propagated from the ${\alpha}$-phase to the ${\gamma}$-phase. The decrease of solution annealing temperature enhanced the resistance to pitting corrosion greatly in acidified chloride environments due to a decrease of PREN difference between the ${\gamma}$-phase and the ${\alpha}$-phase, that is, a decrease of $PREN{\gamma}$ by dilution of N in ${\gamma}$-phase with an increase in the ${\gamma}$-phase volume fraction and an increase of $PREN{\alpha}$ by enrichment of Cr and Mo in the ${\alpha}$-phase with a decrease in the ${\alpha}$-phase volume fraction.

비선형공정계획에서 가공순서 결정을 위한 시뮬레이티드 어닐링 알고리듬 (Simulated Annealing Algorithms for Operation Sequencing in Nonlinear Process Planning)

  • 이동호
    • 대한산업공학회지
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    • 제27권3호
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    • pp.315-327
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    • 2001
  • This paper considers the problem of operation sequencing in nonlinear process planning, which is the problem of selecting and sequencing operations required to produce a part with the objective of minimizing the sum of operation processing costs and machine, setup and tool change costs. Main constraints are the precedence relations among operations. The problem can be decomposed into two subproblems: operation selection and operation sequencing. We suggest four simulated annealing algorithms, which solve the two subproblems iteratively until a good solution is obtained. Here, the operation selection problem can be solved using a shortest path algorithm. Application of the algorithms is illustrated using an example. Also, to show the performances of the suggested algorithms, computational experiments were done on randomly generated test problems and the results are reported. In particular, one of the suggested algorithms outperforms an existing simulated annealing algorithm.

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저온 열처리 공정에 따른 Ag2Se 나노입자 박막의 열전특성 (Effect of Annealing Temperature on Thermoelectric Properties of Ag2Se Nanoparticle Thin Films)

  • 양승건;조경아;윤정권;최진용;김상식
    • 전기학회논문지
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    • 제65권4호
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    • pp.611-616
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    • 2016
  • In this study, we synthesized $Ag_2Se$ nanoparticles (NPs) in an aqueous solution and investigated the thermoelectric characteristics of $Ag_2Se$ NPs thin films on plastic substrates. Regardless of thermal annealing treatment, all the $Ag_2Se$ NPs thin films show the negative Seebeck coefficients, indicating the n-type characteristics. As the annealing temperature increases, the electric conductivity increases while the Seebeck coefficient decreases. The electric conductivity of the thin film annealed at $180^{\circ}C$ is larger by $10^6$ times, compared with the as-prepared thin film, And the maximum power density for the thin film annealed at $180^{\circ}C$ is calculated to be $44{\mu}W/cm^2$.

$YMnO_3$ 강유전 박막의 열처리 분위기가 결정화거동과 전기적 특성에 미치는 영향 (Effects of Annealing Atmosphere on Crystallization and Electrical Properties in $YMnO_3$ Ferroelectric Thin Films)

  • 윤귀영;김정석;천채일
    • 한국세라믹학회지
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    • 제37권2호
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    • pp.168-173
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    • 2000
  • YMnO3 thin films were prepared on Pt/Ti/SiO2/Si substrate by chemical solution deposition method. The films were crystallized by heat-treatment at 85$0^{\circ}C$ for 1 hour. Effects of an annealing atmosphere(O2, Ar, vacuum) on the crystallization behavior and electridcal properties were investigated. YMnO3 thin films annealed under Ar atmosphere showed a superior crystallinity and a very strong c-aix preferred-orientation which was a polar axis. Leakage current density of the films decreased with lowering oxygen partial pressure of the annealing atmosphere. C-V and P-E ferroelectric hysteresis were observed only in the thin film heat-treated under Ar atmosphere.In order to prepare YMnO3 thin films having both low leakage current and ferroelectricity, the annealing atmsphere should be kept under a proper oxygen partial pressure which was about 1 Pa in this work. Leakage current density at 1 volt, dielectric constant($\varepsilon$r), remanent polarization(Pr), and coercive field(Ec) were 1.7$\times$10-8 A/$\textrm{cm}^2$, 25, 1.08$\mu$C/$\textrm{cm}^2$, and 100 kV/cm, respectively.

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회로 분할 유전자 알고리즘의 설계와 구현 (Design and Implementation of a Genetic Algorithm for Circuit Partitioning)

  • 송호정;송기용
    • 융합신호처리학회논문지
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    • 제2권4호
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    • pp.97-102
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    • 2001
  • CAD(Computer-Aided Design)에서의 분할(partitioning)은 기능의 최적화를 위해 대상의 그룹화(grouping)로 레이아웃(layout)에 면적과 전파지연 최소화를 위해 함께 위치할 소자를 결정하는 문제 또는 스케쥴링이나 유닛 선택을 위한 HLS(high level synthesis)에서의 변수나 연산에 대한 집단화 (clustering) 문제들을 포함하여 분할 문제에서 해를 얻기 위해 Kernighan-Lin 알고리즘 Fiduccia Mattheyses heuristic, 시뮬레이티드 어닐링(simulated annealing)등의 방식이 이용된다. 본 논문에서는 회로 분할 문제에 대하여 유전 알고리즘(GA; genetic algorithm)을 이용한 해 공간 탐색(soultion space search)방식을 제안하였으며, 제안한 방식을 시뮬레이티드 어닐링 방식과 비교, 분석하였다.

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나노 구체 리소그라피법에 Ashing과 Annealing 효과를 적용하여 크기조절 가능한 나노패턴의 제조 (Size Tunable Nano Patterns Using Nanosphere Lithography with Ashing and Annealing Effect)

  • 이유림;마흐붑 알람;김진열;정우광;김승대
    • 한국재료학회지
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    • 제20권10호
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    • pp.550-554
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    • 2010
  • This work presents a fabrication procedure to make large-area, size-tunable, periodically different shape metal arrays using nanosphere lithography (NSL) combined with ashing and annealing. A polystyrene (PS, 580 ${\mu}m$) monolayer, which was used as a mask, was obtained with a mixed solution of PS in methanol by multi-step spin coating. The mask morphology was changed by oxygen RIE (Reactive Ion Etching) ashing and temperature processing by microwave heating. The Au or Pt deposition resulted in size tunable nano patterns with different morphologies such as hole and dots. These processes allow outstanding control of the size and morphology of the particles. Various sizes of hole patterns were obtained by reducing the size of the PS sphere through the ashing process, and by increasing the size of the PS sphere through annealing treatment, which resulted in tcontrolling the size of the metallic nanoparticles from 30 nm to 230 nm.

구리의 내식성에 미치는 어닐링 열처리의 영향 (Effect of Annealing Heat Treatment to Corrosion Resistance of a Copper)

  • 김진경;문경만;이진규
    • Journal of Advanced Marine Engineering and Technology
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    • 제29권6호
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    • pp.654-661
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    • 2005
  • Copper is a well known alloying element that is used to improve the resistance to general corrosion of stainless steel And also Cu cation have the anti-fouling effect to inhibit adhesion of the marine algae and shellfish to the surface of heat exchanger cooling pipe or outside wall of the ship, Therefore there are some anti-fouling methods such as anti-fouling Paint mixed with copper oxide or MGPS(Marine Growth Preventing System) by using Cu cation dissolved to the sea wather solution. Cu cation can be dissolved spontaneously by galvanic current due to Potential difference between Cu and cooling pipe of heat exchanger with Ti material, which may be one of the anti-fouling designs. In this study the effect of annealing heat treatment to galvanic current and Polarization behavior was investigated with a electrochemical points of view such as measurement of corrosion Potential, anodic polarization curve. cyclic voltammetric curve, galvanic current etc The grain size of the surface in annealed at $700^{\circ}C$ was the smallest than that of other annealing temperatures. and also the corrosion Potential showed more positive potential than other annealing temperatures. The galvanic current between Ti and Cu with annealed at $700^{\circ}C$ was the largest value in the case of static condition. However its value in the case of flow condition was the smallest than the other temperatures. Therefore in order to increase anti-fouling effect by Cu cation, the optimum annealing temperature in static condition of sea water is $700^{\circ}C$, however non- heat treated specimen in the case of flow condition may be desirable.

Nb 첨가 Zr 합금의 미세조직과 Creep 특성에 미치는 마지막 열처리 온도의 영향 (Effect of Final Annealing Temperature on Microstructure and Creep Characteristics of Nb-containing Zirconium Alloys)

  • 박용권;윤영권;위명용;김택수;정용환
    • 한국재료학회지
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    • 제11권10호
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    • pp.879-888
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    • 2001
  • The effects of final annealing temperature on the microstructure and creep characteristics were investigated for the Zr-lNb-0.2X (X=0, Mo, Cu) and Zr-lNb- 1Sn-0.3Fe-0.1X (X=0, Mo, Cu) alloys. The microstructures were observed by using TEM/EDS, and grain size and distributions of precipitates were analyzed using a image analyzer. The creep test was performed at $400^{\circ}C$ under applied stress of 150 MPa for 10 days. The $\beta$-Zr was observed at annealing temperature above $600^{\circ}C$. In the temperature above$ 600^{\circ}C$, the grain sizes of both alloy systems appeared to be increased with increasing the final annealing temperature. The creep strengths of Zr-1Nb-1Sn-0.3Fe-0.1X alloys were higher than those of Zr-1Nb-0.2X ones due to the effect of solid solution hardening by Sn in Zr-lNb-lSn-0.3Fe-0.1X alloy system. Also, Mo addition showed the strong effect of precipitate hardening in both alloy systems. The creep strength rapidly decreased with increasing the annealing temperature up to $600^{\circ}C$. However, a superior creep resistance was obtained in the sample that annealed to have a second phase of $\beta$-Zr. It was considered that the appearance of $\beta$-Zr would play an important role in the strengthening mechanism of creep deformation.

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저온 용액공정을 이용한 인듐갈륨 산화물(IGO) 박막트랜지스터 제조 및 특성 연구 (A Study on Indium Gallium Oxide Thin Film Transistors prepared by a Solution-based Deposition Method)

  • 배은진;이진영;한승열;;류시옥
    • Korean Chemical Engineering Research
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    • 제49권5호
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    • pp.600-604
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    • 2011
  • 본 연구에서는 박막 트랜지스터(TFTs)에 사용 가능한 Indium Gallium 산화물(IGO) 박막을 스핀코팅을 이용한 화학적 용액공정을 사용하여 $SiO_2$/Si 기판 위에 증착시켰다. 또한 IGO 박막을 증착한 후에 이루어지는 열처리 온도가 박막의 결정화에 미치는 영향과 이들의 전기적 특성이 조사되었다. 스핀코팅법에 의한 IGO 박막을 증착하기 위해 사용된 In과 Ga의 비율은 2:1로 고정하였으며, 박막의 열처리 온도는 $300{\sim}600^{\circ}C$의 범위에서 변화시켰다. 공기 중에서 $300^{\circ}C$$600^{\circ}C$에서 1시간 동안 열처리한 IGO 박막을 사용하여 제조한 박막 트랜지스터의 전류 이동도(field effect mobility)는 각각 0.34와 3.83 $cm^2/V{\cdot}s$로서 양호한 전자소자의 성능을 보였다. 또한 on/off 전류비(current ratio)는 $10^5$ 이상이었으며, IGO 박막의 평균 투과율은 98%이었다.