• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.127-128
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• 2006

일반적으로 screen printing 전극은 양산용 태양전지에 많이 응용되고 있다. 이것은 공정이 진공상태 내에서 이루어지지 않으므로 비교적 간단하게 증착 가능하고, co-firing으로 인한 공정단계의 함축과, 기판의 화학적인 오염이 적으며, 시료를 용도에 따라 다양하게 선택적으로 사용할 수 있고, 많은 수량의 태양전지에 전극을 저비용으로 빠르게 형성할 수 있기에 throughput 이 높은 장점이 있다. 하지만 lithography에 의한 전극보다 저항이 높고, uniformity가 낮은 단점이 있다. 본 연구에서는 Ag 전면전극과 Al 후면전극을 형성하고 conventional furnace에서 co-firing하여 열처리조건에 따라서 전극이 최적화된 가장 낮은 저항을 갖도록 하여 단점을 개선하여 보았다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.383-383
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• 2009

Silicon is commercially prepared by the reaction of high-purity silica with wood, charcoal, and coal, in an electric arc furnace using carbon electrodes, so called the metallurgical refining process, which produces ~98% pure Si (MG-Si). This can be further purified to solar grade silicon (SoG-Si) by various techniques. The most problematic impurity elements are B and P because of their high segregation coefficients. In this study, we explored the possibility of the using Cat-CVD for Si purification. The existing hot-wire CVD was modified to accommodate the catalyzer and the heating source. Mo boat (1.5 cm ${\times}$ 1 cm ${\times}$ 0.2 cm) was used as a heating source. Commercially available Si was purchased from Nilaco corporation (~99% pure). This powder was kept in the Mo-boat and heated to the purification temperature. In addition to the purification by cat-CVD technique, other methods such as thermal CVD, plasma enhanced CVD, vacuum annealing was also tried. It is found that the impurities are reduced to a great extent when treated with cat-CVD method.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2008년도 추계학술발표대회 논문집
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• pp.220-225
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• 2008

Cylindrical stainless-steel/sodium heat pipe for a high-temperature solar thermal application was manufactured and tested for transient and steady-state operations. Two layers of stainless-steel screen mesh wick was inserted as a capillary structure. The outer diameter of the heat pipe was 12.7 mm and the total length was 250 mm. The effective heat transport length, the thermal load, and the operating temperature were varied as thermal transport conditions of the heat pipe. The thermal load was supplied by an electric furnace up to 1kW and the cooling was performed by forced convection of air The effective thermal conductivity and the thermal resistance were investigated as a function of heat flux, heat transport length, and vapor temperature. Typical range of the total effective thermal conductivity was as low as 43,500 W/m K for heat flux of 176.4 kW/$m^2$ and of operating temperature of 1000 K.

• 한국결정성장학회지
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• 제4권2호
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• pp.119-130
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• 1994

저팽창 보로실리케이트 유리기판상에 직접 결정질실리콘 박막을 성장시켜 주는 것이 고순도 금속을 사용한 용액성장법으로는 어려운 관계로 18가지 다른 코팅을 유리기판상에 입혀 실험한 결과 알루미늄과 마그네슘 처리한 기판과 스퍼터링 방법으로 유리기판상에 실리콘 박막을 열처리해준 후 용액성장시켜준 기판의 경우에 양호한 결과가 나왔다. 성장온도 $420^{\circ}C~520^{\circ}C$ 범위에서 성장시킨 이박막은 태양전지와 태양전지의 모듈가격을 낮추는데 응용될 것으로 사료된다.

• 한국진공학회지
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• 제19권5호
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• pp.391-396
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• 2010

실리콘 태양전지의 pn 접합 계면특성을 조사하기 위해서 p형 실리콘 기판 위에 전기로를 이용한 $POCl_3$ 공정을 통하여 n형의 불순물을 주입하여 pn 접합을 만들었다. n형 불순물의 확산되어 들어가는 공정시간이 길고 공정온도가 높을수록 면저항은 줄어들었다. n형 불순물의 주입이 많아질수록 pn 접합 계면에서의 전자친화도가 줄어들면서 면저항은 감소되었다. 면저항이 줄어든 이유는 pn 접합계면에서 전자홀쌍이 생성되면서 이동길이가 길어지고 재결합률이 감소하였기 때문이다. n형의 불순물 확산공정시간이 긴 태양전지 셀에서 F.F. 계수가 높게 나타났으며, 효율도 높게 나타났다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.100.2-100.2
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• 2012

Surface texturing of crystalline silicon is carried out in alkaline solutions for anisotropic etching that leads to random pyramids of about $10{\mu}m$ in size. Recently textured pyramids size gradually reduced using new solution. In this paper, we investigated that texture pyramids size had an impact on emitter property and front electrode (Ag) contact. To make small (${\sim}3{\mu}m$) and large (${\sim}10{\mu}m$) pyramids size, texturing times control and one side texturing using a silicon nitride film were carried out. Then formation and quality of POCl3-diffused n+ emitter in furnace compare with small and large pyramids by using SEM images, simulation (SILVACO, Athena module) and emitter saturation current density (J0e). After metallization, Ag contact resistance was measured by transfer length method (TLM) pattern. And surface distributions of Ag crystallites were observed by SEM images. Also, performance of cell which is fabricated by screen-printed solar cells is compared by light I-V.

• Current Photovoltaic Research
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• 제3권3호
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• pp.97-100
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• 2015

The kesterite $Cu_2ZnSnSe_4$ (CZTSe) thin film solar cells were synthesized by selenization of sputtered Cu/Sn/Zn metallic precursors on Mo coated soda lime glass substrate in Ar atmosphere. Cu/Sn/Zn metallic precursors were deposited by DC magnetron sputtering process with 30 W power at room temperature. As-deposited metallic precursors were placed in a graphite box with Se pellets and selenized using rapid thermal processing furnace at various temperature ($480^{\circ}C{\sim}560^{\circ}C$) without using a toxic $H_2Se$ gas. Effects of Selenization temperature on the morphological, crystallinity, electrical properties and cell efficiency were investigated by field emission scanning electron microscope (FE-SEM) and X-ray diffraction (XRD), J-V measurement system and solar simulator. Further details about effects of selenization temperature on CZTSe thin films will be discussed.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.766-772
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• 2011

Amorphous Si (a-Si) thin films of $p^+/p^-/n^+$ were deposited on $Si_3N_4$/glass substrate by using a plasma enhanced chemical vapor deposition (PECVD) method. These films were annealed at various temperatures and for various times by using a rapid thermal process (RTP) equipment. This step was added before the main thermal treatment to make the nuclei in the a-Si thin film for reducing the process time of the crystallization. The main heat treatment for the crystallization was performed at the same condition of $600^{\circ}C$/18 h in conventional furnace. The open-circuit voltages ($V_{oc}$) were remained about 450 mV up to the nucleation condition of 16min in the nucleation RTP temperature of $680^{\circ}C$. It meat that the process time for the crystallization step could be reduced by adding the nucleation step without decreasing the electrical property of the thin film Si for the solar cell application.

• 태양에너지
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• 제12권3호
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• pp.47-59
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• 1992

산업용 노의 폐열 회수를 위하여 노의 배기부에 설치되는 복사형 레큐페레이터 중에서 가장 대표적인 형태인 이중 원관식 레큐페레이터의 열전달 특성에 관하여 연구하였다. 내관에는 고온의 배기가스가 흐르고, 내관과 외관 사이의 환상공간에서는 공기가 흐르며 외관의 외벽면은 단열되어 있는 원관 식 레큐퍼레이터의 열전달특성을 규명하였다. 고온의 배기가스 폐열은 내관의 내벽으로 전달되고 이는 다시 환산 공간내의 공기로 전달된다. 배기가스의 복사 열전달은 구 조화 근사법을 사용하여 모델링한 후 이를 유동장과 연계하여 수치적으로 해석하였으며, 기존의 실험적연구와 일치하는 조건에서의 계산결과와 비교하였다. 또한, 내관의 동심축 상에 원동통형의 재복사기를 설치할 경우 내관에서 재복사 효과가 일어나는데 이에 따른 열전달 특성을 연구하여 레큐퍼레이터를 이론적으로 해석할 수 있는 방법을 제시하였다.

• Current Photovoltaic Research
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• 제2권3호
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• pp.115-119
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• 2014

$Cu(In,Ga)Se_2$ (CIGS) thin films have been used as a light absorbing layer in high-efficiency solar cells. In order to improve the quality of the CIGS thin film, often selenization step is applied. Especially when the thin film was formed by non-vacuum powder process, selenization can help to induce grain growth of powder and densification of the thin film. However, selenization is not trivial. It requires either the use of toxic gas, $H_2Se$, or expensive equipment which raises the overall manufacturing cost. Herein, we would like to deliver a new, simple method for selenization. In this method, instead of using a costly two-zone furnace, use of a regular tube furnace is required and selenium is supplied by a mixture of selenium and ceramic powder such as alumina. By adjusting the ratio of selenium vs. alumina powder, selenium vaporization can be carefully controlled. Under the optimized condition, steady supply of selenium vapor was possible which was evidently shown by large grain growth of CIGS within a thin powder layer.