• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.352-357
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• 2009

The InAs multi-quantum dots (MQDs) solar cell and InGaAs multi-quantum wells (MQWs) solar cell to cover 1.1 eV and 1.3 eV were designed by 1D poisson, respectively. The MQDs and MQWs of 5, 10, 15 layers were grown by molecular beam epitaxy. The photo luminescence results showed that the 5 period stacked MQDs have the highest intensity at around 1.1 eV with 57.6 meV full width at half maximum (FWHM). Also we can observe 10 period stacked MQWs peak position which has highest intensity at 1.31 eV with 12.37 meV FWHM. The density and size of QDs were observed by reflection high energy electron diffraction pattern and atomic force microscope. Futhermore, AlGaAs/GaAs sandwiched tunnel junctions were modified according to the width of GaAs layer on p-type GaAs substrates. The structures with GaAs width of 30 nm and 50 nm have backward diode characteristics. In contrast, tunnel diode characteristics were observed in the 20 nm of that of sample.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.222-223
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• 2007

Though there are many causes for the maximum output power reduction, the short-term problem is hot-spot effect by sun shading. To prevent this, normally PV maker uses bypass diode. In here, we tried to check the how bypass diodes works by varying sun shading portion on solar. In case of absence of bypass, the sun shading effect increases the series resistance and that promotes the reduction of maximum power and degradation of PV modules. Bypass diode worked normally when 60% of solar cell was shaded and the measured maximum output power was lower than that of theoretical one. The further analysis is needed.

• Current Photovoltaic Research
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• v.9 no.1
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• pp.6-10
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• 2021

The mesh mask screen, which is generally used for screen printing metallization of silicon solar cell, requires high squeegee pressure and low printing speed. These requirements are acting as a limiting factor in production yield in photovoltaic industries. In order to improve the productivity, a metal mask, which has high durability and high printing speed, has been researched. In this paper, the characteristics of each solar cell, in which electrodes were formed by using a metal mask and a mesh mask, were analyzed through recombination current density. In particular, the metal-induced recombination current density (Jom) representing the recombination of the emitter-metal interface was calculated using the shading method, and the resulting efficiency and open-circuit voltage were analyzed through the diode equation. As a result of analyzing the proportion of the metal-induced recombination current density to the total emitter recombination current density, it was analyzed that the reduction of the metal-induced recombination current density through the metal mask is an important factor in reducing the total recombination current density of the solar cell.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.63 no.3
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• pp.125-130
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• 2014

This paper is research result for a development of solar cell silicon ingot glowing(SCSIG) PWM converter system for 120[kW] 3[kA]. The system include 3-phase AC-DC rectifier diode converter of input voltage AC 460[V] and 60[Hz], DC-AC single phase full bridge PWM inverter of high frequency, AC-DC single-phase full wave rectifier using center-tapped of transformer for low voltage 50[V] and large current 3,000[A], carbon resistor load 0.2 [$m{\Omega}$]. PWM switching frequency for IGBT inverter control set 15KHz. The suggested researching contents are designed data sheets of power converter system, PSIM simulation, operating characteristics and analysis results of developed SCSIG system.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.35-40
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• 2015

In this study, an n-ZnO/p-Si heterojunction diode with embedded Ag nanoparticles was fabricated to investigate the possible improvement of light trapping via the surface plasmon resonance effect for solar cell applications. The Ag nanoparticles were fabricated by the physical sputtering method. The acquired current-voltage curves and optical absorption spectra demonstrated that the application of Ag nanoparticles in the n-ZnO/p-Si interface increased the photo current, particularly in specific wavelength regions. The results indicate that the enhancement of the photo current was caused by the surface plasmon resonance effect generated by the Ag nanoparticles. In addition, minority carrier lifetime measurements showed that the recombination losses caused by the Ag nanoparticles were negligible. These results suggest that the embedding of Ag nanoparticles is a powerful method to improve the performance of n-ZnO/p-Si heterojunction solar cells.

• Journal of Advanced Marine Engineering and Technology
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• v.28 no.6
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• pp.1010-1016
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• 2004

In this paper, a scheme for estimating the parameters of solar cells and a NN-based emulator for predicting the maximum power point are presented. The diode model with series and shunt resistors is used to estimate parameters highly affecting its V-I characteristic curve and both a real-coded genetic algorithm and the model adjustment technique are employed. For implementing the emulator, a multi-layered neural network incorporating with the BP algorithm is used. A set of simulation works using both field data and generated data are carried out to demonstrate the effectiveness of the proposed method.

• Journal of the Korean Society of Industry Convergence
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• v.22 no.4
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• pp.395-403
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• 2019

The excessive need of power is creating an unbalance situation in power sector, where solar energy is one of the best solutions among other energy sources to mitigate this demand. It is globally accepted because of its flexibility and long life compared to others. A lot research is going on to enhance the energy efficiency by introducing photovoltaic (PV) power generation technology, but still irradiation of PV power is the major problem. In this manuscript, we have designed PV module using single diode methodology and also the solar conversion efficiency was boosted with maximum power point tracking (MPPT) by using perturb and observe (P&O) algorithm. The simulation was done for $1000W/m^2$ and $800W/m^2$ at solar irradiance in cell temperature of 25C and 40C degree levels in PSIM tool.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.59-65
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• 2012

A study on the electrical characteristic analysis of solar cell diodes under experimental conditions of varying temperature and frequency has been conducted. From the current-voltage (I-V) measurements, at the room temperature, we obtained the ideality factor (n) for Space Charge Region (SCR) and Quasi-Neutral Region (QNR) of 3.02 and 1.76, respectively. Characteristics showed that the value of n (at SCR) decreases with rising temperature and n (at QNR) increases with the same conditions. These are due to not only the sharply increased SCR current flow but the activated carrier recombination in the bulk region caused by defects such as contamination, dangling bonds. In addition, from the I-V measurements implemented to confirm the junction uniformity of cells, the average current dispersion was 40.87% and 10.59% at the region of SCR and QNR, respectively. These phenomena were caused by the pyramidal textured junction structure formed to improve the light absorption on the device's front surface, and these affect to the total diode current flow. These defect and textured junction structure will be causes that solar cell diodes have non-ideal electrical characteristics compared with general p-n junction diodes. Also, through the capacitance-voltage (C-V) measurements under the frequency of 180 kHz, we confirmed that the value of built-in potential is 0.63 V.

• Transactions on Electrical and Electronic Materials
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• v.17 no.6
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• pp.359-362
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• 2016

In the PV (Photovoltaic) power system, a junction box collects the DC voltage generated from the PV module and transfers it to the PCS (power conditioning system). The junction box prevents damage caused by the voltage difference between the serially connected PV modules and provides convenience while repairing or inspecting the PV array. In addition, the junction box uses the diode to protect modules from the inverse current when the PV power system and electric power system are connected for use. However, by using the reverse blocking diode, heat is generated within the junction box while generating electric power, which decreases the generating efficiency, and causes short circuit and electric leakage. In this research, based on the purpose of improving the performance of the PV module by decreasing the heat generation within the junction box, a junction box with a built-in bypass circuit was designed/manufactured so that a certain capacity of current generated from the PV module does not run through the reverse blocking diode. The manufactured junction box was used to compare the electric power and heating power generated when the circuit was in the bypass/non-bypass modes. It was confirmed that the electric power loss and heat generation indicated a decrease when the circuit was in the bypass mode.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.166-169
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• 2006

We fabricated hexagonal copper sulfide $Cu_2S$ nanowires to obtain a larger contact area of $Cu_2S/CdS$ solar cell. Copper sulfide nanowires were grown on Cu foil at room temperature by gas-sol id reaction. The size, density and shape of nanowires seemed to be affected by the change or reaction time temperature, crystallographic orientation of Cu foil, and molar ratio of the mixed gas. We controled the length and the diameter of the nanowires and we obtained suitable nanowire arrays which has fitting size for uniform deposition with n-type CdS. CdS layer was deposited on the nanowire array by electrodeposition and it seemed to be uniform. The $Cu_2S/CdS$ nanowires/CdS junction showed diode characteristics, A large contact area is expected with the $Cu_2S/CdS$ nanowire structure as compared with the $Cu_2S/CdS$ thin film.