• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.234-234
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• 2008

Chemically homogeneous $Ba_{0.6}Sr_{0.4}TiO_3$ (BST) sols were synthesized using barium acetate, strontium acetate, and titanium isoproxide as starting materials. BST thin films of thickness 340 nm were deposited on Pt/$TiO_2/SiO_2$/Si and alumina substrates using spin coating method. The technique used for the processing of these films was Ultraviolet (UV) sol-gel photoannealing, using phto-sensitivity precursor solutions and UV-assisted rapid thermal processing(UV-RTP). The crystallization behaviour of the BST sols and thin films was studied by differential thermal analysis (DTA) and X-ray diffraction (XRD). Variation of permittivity and dielectric loss were measured in LCR-meter, model HP 4394A.

• Journal of the Korean Ceramic Society
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• v.42 no.10 s.281
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• pp.645-648
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• 2005

To fabricate a (100) silicon hard master, we used anisotropic wet etching for the embossing. The etching chemical for the sili­con wafer was a TMAH 25$\%$ solution. The anisotropic wet etching produces a smooth sidewall surface inclined at 54.7°, and the surface roughness of the fabricated master is about 1 nm. After spin coating an organic-inorganic sol-gel hybrid resin on a silicon substrate, we used the fabricated master to form patterns on the silicon substrate. Thus, we successfully obtained patterns via the hot embossing technique with the (100) silicon hard master. Moreover, by using a single hydrophobic surface treatment of the master, we succeeded in achieving uniform surface roughness of the embossed patterns for more than ten embossments.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.386-386
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• 2011

sol-gel 및 hydrothermal growth method를 이용한 zinc oxide nanorod는 제작 시 고가의 장비가 필요치 않기에 저비용 대면적 박막을 제작하는데 적합하지만 rod들의 array 및 density 조절에서 어려움을 가지고 있다. 본 연구에서는 이러한 nanorod array 형상 조절을 위하여 zinc oxide seed layer 형성 과정 중 precursor solution에 이종 나노 입자를 첨가하였다. 첨가한 seed precursor solution을 spin coating한 이후에 후처리 하여 hydrothermal method를 이용해 성장시켰다. 합성한 rod들을 optic과 FE-SEM으로 측정해 rod들의 density 변화를 확인할 수 있었다.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1243-1244
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were $16.48{\mu}C/cm^2$ and 35.48kV/cm, respectively.

• Bulletin of the Korean Chemical Society
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• v.33 no.4
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• pp.1235-1241
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• 2012

Aluminium (Al)-doped zinc oxide (AZO) thin films with different Al concentrations were prepared by the solgel spin-coating method. Optical parameters such as the optical band gap, absorption coefficient, refractive index, dispersion parameter, and optical conductivity were studied in order to investigate the effects of the Al concentration on the optical properties of AZO thin films. The dispersion energy, single-oscillator energy, average oscillator wavelength, average oscillator strength, and refractive index at infinite wavelength of the AZO thin films were found to be affected by Al incorporation. The optical conductivity of the AZO thin films also increases with increasing photon energy.

• Solar Energy
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• v.19 no.1
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• pp.29-36
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• 1999

ZnO/n-Si junctions were fabricated by spin coating with ZnO precursor produced by the sol-gel process. In order to increase the electrical conductivity of ZnO films, the films were n-doped with Al impurity and subsequently annealed at about $450^{\circ}C$ under reducing environments. The ohmic contacts between n-Si and AI for a bottom electrode were successfully fabricated by doping the rear surface of Si substrate with phosphorous atoms. The front surface of the substrate was also doped with phosphorous atoms for improving the efficiency of the solar cells. Consequently, conversion efficiencies ranging up to about 5.3% were obtained. These efficiencies were found to decrease slowly with time because of the oxide films formed at the ZnO/Si interface upon oxygen penetration through the porous ZnO. Oxygen barrier layers could be necessary in order to prevent the reduction of conversion efficiencies.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1703-1704
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were $16.48{\mu}C/cm^2$ and 35.48kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.311-314
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• 1999

Ferroelectric PZT heterolayered thin films were fabricated by spin coating method on the Pt/Ti/SiO$_2$/Si substrate using PZT(10/90) and PZT(90/10) metal alkoxide solutions. All PZT heterolayered films showed a homogeneous grain structure without presence of the rosette structure. It can be assumed that the lower PZT layers a role of nucleation site or seeding layer for the formation of the upper PZT layer. Zr and Ti diffusion into the Pt electrode were mainly distributed at the surface of Pt electrode beneath the PZT/Pt interface. The PZT/Pt interfacial layer showed a microstructure characterized by a grain phase surrounded by a Pb-deficient pyrochlore matrix phase. The relative dielectric constant and the dielectric loss of the PZT-6 film were 567 and 3.6, respectively.

• Journal of the Korean Ceramic Society
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• v.42 no.7 s.278
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• pp.475-482
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• 2005

Zn$_{l-x}$Co$_{x}$O (x = 0.05 - 0.20) films were grown on Coming 7059 glass by sol-gel process. A homogeneous and stable Zn$_{l-x}$Co$_{x}$O sol was prepared by dissolving zinc acetate dihydrate (Zn(CH$_{3}$COO)$_{2}$$\cdot$2H$_{2}$O), cobalt acetate tetrahydrate ((CH$_{3}$)$_{2}$$\cdot$CHOH) and aluminium chloride hexahydrate (AlCl$_{3}$ $\cdot$ 6H$_{2}$O) as solute in solution of isopropanol ((CH$_{3}$)$_{2}$$\cdot$CHOH) and monoethanolamine (MEA:H$_{2}$NCH$_{2}$CH$_{2}$OH). The films grown by spin coating method were postheated in air at 650°C for 1 h and annealed in the condition of vacuum (5 $\times$ 10$^{-6}$ Torr) at 300$^{\circ}C$ for 30 min and investigated the nature of c-axis preferred orientation and physical properties with different Co concentrations. Znl_xCOxO thin films with different Co concentrations were well oriented along the c-axis, but especially a highly c-axis oriented Zn$_{l-x}$Co$_{x}$O thin film was grown at 10 at$\%$ Co concentration. The transmittance spectra showed that Zn$_{l-x}$Co$_{x}$O thin films occur typical d-d transitions and sp-d exchange interaction became activated with increasing Co concentration. The electrical resistivity of the films at 10 at$\%$ Co had the lowest value due to the highest c-axis orientation. X-ray photoelectron spectroscopy and alternating gradient magnetometer analyses indicated that no Co metal cluster was formed, and the ferromagnetic properties appeared, respectively. The characteristics of the electrical resistivity and room temperature ferromagnetism of Zn$_{l-x}$Co$_{x}$O thin films suggested the possibility for the application to dilute magnetic semiconductors.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.170-175
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• 2004

The ferroelectric (Y $b_{x}$ $Y_{1-x}$)Mn $O_3$ thin films were fabricated by sol-gel method using Y-acetate, Yb-acetate, and Mn-acetate as raw materials. The stable (Y $b_{x}$ $Y_{1-x}$)Mn $O_3$ precursor solution (sol) was prepared through the reflux process with acetylaceton as a catalyst and coated on Si(100) substrate by spin coating. The heat treatment temperature and, Rw ($H_2O$/alkoxide moi ratio) dependence on crystallinity of thin films were studied. The lowest temperature for obtaining YbMn $O_3$phase and the optimum heat-treatment conditions were proved as at 7$50^{\circ}C$ and 80$0^{\circ}C$, respectively. The hexagonal YbMn $O_3$with c-axis preferred orientation could be obtained at Rw=1 condition. The remanent polarization for the thin films of x=0 or 1 was about 200 nC/㎤ while, for the specimens ot 0< x< 1, were 50∼100 nC/$\textrm{cm}^2$.