• Journal of the Korean Ceramic Society
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• v.32 no.1
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• pp.17-24
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• 1995

The TEA complex polymeric sol was prepared by the alkoxide sol-gel method. The purpsoe of this experiment was to vefity the particle shape in the sol from the investigation of the rheological properties. TEA retarded hydrolysis rate by the reaction with alkoxide enough to make a stable transparent sol in the wide range of composition. From the results of the viscosity change with time, the optimum mole ratio for spinning was selected as 0.5 mole of TEA, 3 mole of H2O and the optimum viscosity was 104 cPs. The rheological behavior of the sol showed that the particle shape in the sol was linear, which was adequate for fiber drawing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.390-390
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• 2010

We fabricate Schottky diodes with the contact between a sol-gel derived ZnO layer and Au that guarantees the expected Schottky contact due to the high work function. The formed single metal Schottky barrier shows characteristics comparable to the barrier formed by alloys. Au is deposited by thermal evaporation on a ZnO thin film that is optimally formed under sol-gel process conditions of a 1-mol zinc acetate concentration and a 3000-rpm coating speed. Possible defects. which can provide deleterious current paths. are minimized by patterning the deposited Au. The I-V curve verifies the formation of a Schottky contact. Measurements showed that the Schottky barrier height and leakage current at -5 V were 0.6 eV and $1{\times}10^{-12}A$. respectively.

• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1189-1196
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• 2003

Ferroelectric B $i_{3.25}$L $a_{0.75}$ $Ti_3$ $O_{12}$ (BLT) solution was synthesized by sol-gel process. BLT thin films were deposited on Pt/Ti $O_2$/ $SiO_2$/Si substrates by spin-coating. In this experiments, Bi(TMHD)$_3$, La(III)2-Methoxyethoxide, and Ti(IV) i-propoxide were used as starting materials, which were dissolved in 2-Methoxyethanol. Rapid Thermal Annealing (RTA) was used to promote crystallization of BLT thin films. The thin films with RTA process were compared with those with non-RTA process on electrical properties. After RTA process, the remanent polarization value (2Pr) of BLT thin films annealed at 72$0^{\circ}C$ was 20.46 $\mu$C/$\textrm{cm}^2$ which was approximately 27% higher than that of non-RTA process at 5 V.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.7
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• pp.1491-1496
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• 2005

We fabricated the $Pb_{0.72}La_{0.28}TiO_3$ (PLT(28)) thin film successfully by using the sol-gel method and characterized it to evaluate its potential for being utilized as the capacitor dielectrics of ULSI DRAMs. In our sol-gel process, the acetates were used as the starting materials. Through the TGA-DTA analysis, we established the excellent fabrication conditions of the sol-gel method for the PLT(28) thin film. We obtained the dense and crack-free PLT(28) thin film of $100\%$ perovskite phase by drying at $350^{\circ}C$ after each coating and final annealing at $650^{\circ}C$. Electrical properties of PLT(28) thin film were measured through formation on the $Pt/Ti/SiO_2/Si$ substrate and its dielectric constant and leakage current density were measured as 936 and $1.1{\mu}A/cm^2$, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.865-868
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• 2005

We fabricated the $Pb_{0.72}La_{0.28}TiO_3 (PLT(28))$ thin film successfully by using the sol-gel method and characterized it to evaluate its potential for being utilized as the capacitor dielectrics of ULSI DRAMs. In our sol-gel process, the acetates were used as the starting materials. Through the TGA-DTA analysis, we established the excellent fabrication conditions of the sol-gel method for the PLT(28) thin film. We obtained the dense and crack-free PLT(28) thin film of 100% perovskite phase by drying at 350$^{\circ}C$ after each coating and final annealing at 650$^{\circ}C$. Electrical properties of PLT(28) thin film were measured through formation on the Pt/Ti/SiO$_2$/Si substrate and its dielectric constant and leakage current density were measured as 936 and 1.1${\mu}$A/cm$^2$, respectively

• Journal of Ocean Engineering and Technology
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• v.29 no.1
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• pp.94-99
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• 2015

Lead zirconate titanate (PZT) thick films with thicknesses of ㎛ were fabricated on silicon substrates using an aerosol deposition method. A PZT powder solution was prepared using a sol-gel process. The average diameters (d50) obtained were 1.67, 1.98, and 2.40μm when the pyrolysis temperatures were 300℃, 350℃, and 450℃ respectively. The as-deposited film had a uniform microstructure without any cracks or pores. The as-deposited films on silicon were annealed at a temperature of 700℃. The 20-㎛-thick PZT film showed good adherence between the PZT film and substrate, with no tearing observed in the conventional solid phase process. This was probably because the presence of pores produced from organic residue during annealing relieved the residual stresses in the deposited film.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.43 no.5
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• pp.555-566
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• 2023

In this study, a composite phase change material (CPCM) produced using the SOL-GEL technique was developed as a thermal energy storage medium for low-temperature applications. Tetradecane and activated carbon (AC) were used as the core and supporting materials, respectively. The tetradecane phase change material (PCM) was impregnated into the porous structure of AC using the vacuum impregnation method, and a thin layer of silica gel was coated on the prepared composite using the SOL-GEL process, where tetraethyl orthosilicate (TEOS) was used as the silica source. The thermal performance of the CPCM was analysed using differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA). DSC results showed that the pure tetradecane PCM had melting and freezing temperatures of 6.4℃ and 1.3℃ and corresponding enthalpies 226 J/g and 223.8 J/g, respectively. The CPCM exhibited enthalpy of 32.98 J/g and 27.7 J/g during the melting and freezing processes at 7.1℃ and 2.4℃, respectively. TGA test results revealed that the AC is thermally stable up to 500℃, which is much higher than the decomposition temperature of the pure tetradecane, which is around 120℃. Moreover, in the case of AC-PCM and CPCM thermal degradation started at 80℃ and 100℃, respectively. The chemical stability of the CPCM was studied using Fourier-transform infrared (FT-IR) spectroscopy, and the results confirmed that the developed composite is chemically stable. Finally, the surface morphology of the AC and CPCM was analysed using scanning electron microscopy (SEM), which confirmed the presence of a thin layer of silica gel on the AC surface after the SOL-GEL process.

• Journal of the Korean Ceramic Society
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• v.28 no.11
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• pp.865-872
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• 1991

LAS (lithium aluminosilicate) sol was synthesized using the hydrolysis-condensation reaction of TEOS, chelated Al(OBus)3 and LiNO3 with H2O in alcohol (ethanol+2-propanol) medium. Lowering Li content by a factor of 1/2 significantly enhanced densification and retarded the crystallization of LAS gel by ~30$0^{\circ}C$. Dense LAS specimen with essentially pore-free microstructure was obtained by sintering the sol-gel derived gel at 80$0^{\circ}C$ for 4 h and annealing at 120$0^{\circ}C$ for 2 h. Similary, a mixed colloidal processing was attempted as a convenient, alternative route for the fabrication of dense LAS sintered body. The $\beta$-spodumene seeding (~0.8 ${\mu}{\textrm}{m}$) in the sol-gel derived LAS modified the sequence of phase transformations and lowered the temperature of crystallization by ~12$0^{\circ}C$. Combining the epitaxial seeding with the sol-gel process, we could lower the crystallization temperature to the sintering temperature range (~80$0^{\circ}C$) and, demonstrate a possibility of making the viscous sintering/crystallization as a continuous as a continuous unit process.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.55-55
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• 2003

Recently, with the rapid development of the waveguide division multiplexing (WDM) systems for large capacity and flexibility of information network, the broad band 1.5$\mu\textrm{m}$ erbium-doped waveguide amplifier (EDWA) become important. The main factors affecting the performance of sol-gel-based waveguides are non-radiative relaxation channels due to rare-earth concentration quenching and to vibration of the OH groups Therefore, the sol-gel process has to be carefully controlled in order to minimize the residual OH content.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.140-141
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• 2003

졸겔법은 건식공정에서 습식공정으로 마이크로 단위에서 나노 단위로의 전환을 의미하는 정밀세라믹스의 제조공정에 새로운 개념으로서 세라믹스의 초기 제조공정에 표면이나 계면을 조절함으로써 재료내에 이들로 인해 발생하는 불균질을 제거하여 우수한 물성의 세라믹스를 얻고자 하는 것이다. 본 논문에서는 고출력 레이저 발진용 매질로 각광받고 있는 Nd:glass를 기존의 건식공정인 용융법대신 습식공정인 sol-gel process를 이용하여 제조하고자 연구하였다.