• Journal of the Korean Ceramic Society
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• v.33 no.12
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• pp.1301-1310
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• 1996

Generally it requires high sintering temperatures more than 135$0^{\circ}C$ to make semiconductive BaTiO3 ceramics. Also it is very difficult to achieve a homogeneous mixing in solid-state reaction method. Therefore the liquid phase distributed to non-uniform dilute the characteristics of PTCR. In order to improve the uniformity this study is used the sol-gel coating method. Using this method we studied the new manufacturing process that had a high reproducibility and mass production capability. Tetraethyl orthosilicate (TEOS) was used as a source of Si. The semiconductive BaTiO3 ceramics which was produced by sol-gel method for the SiO2 addition and sintered between 124$0^{\circ}C$ and 130$0^{\circ}C$ showed almost same resistivity at room temperature among 125$0^{\circ}C$ and 130$0^{\circ}C$. As the results We could be sintered the semiconducting BaTiO3 ceramics at lower temperature even at 125$0^{\circ}C$ maintaining the same specific resistivity ratio ($\rho$max/$\rho$min) at 130$0^{\circ}C$. The specific resistivity both below and above the Curie temperature were increased by slow cooling and the steepness of the plots in the reasion of transition from low to high resistance increased as the cooling rate decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.232-233
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• 2006

In recent years the interest in organic/inorganic hybrid materials has increased at a fast rate. Nano organic-inorganic hybrid composites have shown advantages for preparing hard coating layers. Especially, nano hybrid composite has low environmental pollution. It has high transparency, hardness, toughness, thermal dissociation temperature, hydrophobicity by using nano sized inorganic material. There are many ways in which these materials may be synthesized, a typical one being the use of silica and silanes using the sol-gel process. The structure of sol-gel silica evolves as a result of these successive hydrolysis and condensation reactions and the subsequent drying and curing. The sol-gel reactions are catalyzed by acids and produce silica sol solutions. The silica sol grows until they reach a size where a gel transition occurs and a solid-like gel is formed. Colloidal silica(CS)/silane sol solutions were synthesized in variation with parameters such as different acidity and reaction time. In order to understand their physical and chemical properties, sol-gel coating films were fabricated on glass. From all sol-gel solutions, seasoning effect of sol-gel coating layer on glass was observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.477-480
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• 1998

Sol-gel processing, which started some decades back as a laboratory curiosity, has proved to be a powerful and versatile technique for the synthesis of materials. The utility of the sol-gel method for producing glass and ceramic materials in the form of powders, fibers, thin films and bulk shapes with high purity, functional microstructures and potentially high chemical homogeneity at relatively low temperature (compared to conventional processing) has been discussed.

• Transactions on Electrical and Electronic Materials
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• v.18 no.3
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• pp.155-158
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• 2017

In this paper, ZnO Thin Film Transistors (TFTs) were fabricated by a sol-gel method using a low-temperature process, and their physical and electrical characteristics were analyzed. To lower the process temperature to $200^{\circ}C$, we used a zinc nitrate hydrate ($Zn(NO_3)_2{\cdot}xH_2O$) precursor. Thermo Gravimetric Analyzer (TGA) analysis showed that the zinc nitrate hydrate precursor solution had 1.5% residual organics, much less than the 6.5% of zinc acetate dihydrate at $200^{\circ}C$. In the sol-gel method, organic materials in the precursor disrupt formation of a high-quality film, and high-temperature annealing is needed to remove the organic residuals, which implies that, by using zinc nitrate hydrate, ZnO devices can be fabricated at a much lower temperature. Using an X-Ray Diffractometer (XRD) and an X-ray Photoelectron Spectrometer (XPS), $200^{\circ}C$ annealed ZnO film with zinc nitrate hydrate (ZnO (N)) was found to have an amorphous phase and much more oxygen vacancy ($V_o$) than Zn-O bonds. Despite no crystallinity, the ZnO (N) had conductance comparable to that of ZnO with zinc acetate dihydrate (ZnO (A)) annealed at $500^{\circ}C$ as in TFTs. These results show that sol-gel could be made a potent process for low-cost and flexible device applications by optimizing the precursors.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1733-1736
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• 2008

ZnO thin films with preferred orientation along the (0 0 2) plane were fabricated by a sol-gel method. The effects of the annealing temperature, time, and thickness were studied by investigating UV-visible spectra, FT-IR spectra, and XRD of ZnO films. The films were dried and annealed ed at $100^{\circ}C,\;200^{\circ}C$, and $300^{\circ}C$ for 1hr, 2hrs, and 3hrs, respectively. The film showed the preferred (0 0 2) orientation and high transmittance near 90% in the visible range. Also, SEM images of the films exhibited very smooth surfaces without holes and cracks. Schottky diodes were fabricated by using ZnO sol-gel material. Au and Al were used as electrodes to make Ohmic and Schottky contacts, respectively. The annealing temperature, time and the thickness dependent I-V characteristics were presented in this article.

• Bulletin of the Korean Chemical Society
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• v.23 no.8
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• pp.1078-1084
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• 2002

The formation temperature for the perovskite lead zirconate titanate [Pb(Zr,Ti)O3, PZT] derived from sol-gel route was lowered by more than $100^{\circ}C$ with the addition of crystallographically suitable seed particles, such as barium titanat e (BT) or PZT. We investigated the effect of seeding on the crystallization of perovskite phase and in the microstructure of the sol-gel derived PZT powder by varying the concentration, size and chemical species of seed particles. The phase transition as a function of temperature was monitored by DTA, XRD, and Raman spectroscopy, and the interface between the seed particle and grown PZT layer was analyzed by SEM and high resolution TEM techniques. It was found that both the heterogeneous and homogeneous nucleation contributes competitively in the formation of perovskite PZT grains.

• Membrane Journal
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• v.11 no.3
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• pp.124-132
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• 2001

Silica membranes were prepared on a porous ${\alpha}$-alumina tube with pore size of 150nm by sol-gel and chemical vapor deposition(CVD) method for hydrogen separation at high temperatures. Silica and ${\gamma}$-lumina membranes formed by the sol-gel method possessed a large amount of mesopores of a Knudsen diffusion regime. In order to improve the $H_2$ selectivity, silica was deposited in the sol-gel derived silica/${\gamma}$-alumina layer by thermal decomposition of tetraethyl orthosilicate(TEOS) at $600^{\circ}C$. The CVD with forced cross flow through the porous wall of the support was very effective in plugging mesopores that were left unplugged in the membranes. The CVD modified silica/alumina composite membrane completely rejected nitrogen permeation and thus showed a high $H_2$ selectivity by molecular sieve effect. the permeation of hydrogen was explained by activated diffusion and the activation energy was 9.52kJ/mol.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.110-114
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• 2014

We propose a low temperature sol-gel ZnO/Ag nanowire composite thin film to fulfill low temperature and low cost requirements, which are essential criteria in future flexible electronic devices. In this proposed thin film, Ag nanowire plays the role of electrical conduction, and sol-gel ZnO provides a structural medium with a high visible transmittance. Low temperature restriction in the sol-gel fabrication process prevents sufficient oxidation of Zn acetate precursors, which were solved by a post-coating treatment with ultraviolet light irradiation. Composite thin film formation was performed by spin coating methods with a mixed precursor solution or in a sequential manner. We obtained an average visible transmittance larger than 85% and a sheet resistance smaller than $50{\Omega}/sq$. After optimization in a fabricated composite transparent conductive thin film with the thickness around 100 nm. Similar experimental demonstration in a flexible substrate (polyethyleneterephthalate) was successful, which implies a promising application opportunity of this technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.271-278
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• 2006

Green light emitting $Zn_2SiO_4$Mn and Al co-doped $Zn_2SiO_4$:Mn phosphor were synthesized by a sol-gel method combined with a furnace firing. The luminescent properties of the sample have been investigated. We have found that the phosphor powder with uniform shape show the maximum luminescent intensity when it is prepared with sol-gel method and fired at relatively high temperature ($1100{\sim}1300^{\circ}C$).

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.432-440
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• 1996

ZrO2 gel was prepared under pH 10 alkaline condition by sol-gel process and was investigated as a function of calcination temperature and effect of calcination temperature on cobalt adsorption capacity. The ZrO2 powder prepared by sol-gel process was calcined at 600, 800, 1000, 1200, 140$0^{\circ}C$ and analyzed by X-ray diffractometry. SEM specific surface area by BET nitrogen adsorption FT-IR and TG-DTA technique. It was shown that cobalt adsorption capacity of ZrO2 prepared under pH 10 alkaline condition and then calcined at $600^{\circ}C$ in high temperature was determined to be larger than that of ZrO2 at various calcination temperature. The specific surface area of ZrO2 calcined at $600^{\circ}C$ was 24.03m2/g and cobalt adsorption capacity at 25$0^{\circ}C$ high-temperature water was 0.16m-eq/g.