• Title/Summary/Keyword: SoG-Si

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Magnetic Sector SIMS의 Sample Holder 위치에 따르는 RSF (Relative Sensitivity Factor) 변화 검증

  • 홍성윤;이종필;홍태은;윤명노;민경열;이순영
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.192-192
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    • 1999
  • SIMS(Secondary Ion Mass Spectrometry)는 다른 표면 분석장비와 비교하여^g , pp m,^g , pp b 단위의 미량분석이 가능한 장비로서, 특히 depth Profiling을 위한 dynamic SIMS는 Mass Spectrometer의 종류에 따라 Quadrupole SIMS (Q-SIMS)와, Magnetic Sector SIMS (M-SIMS)로 분류된다. 한편, Q-SIMS와 달리 M-SIMS의 경우, Transmission을 높여 주기 위해 Sample Holder에 수 keV의 bias를 걸어 주는데, 이로 인하여 분석 원소에 대한 Sensitivity가 향상되어 지는 반면, RSF의 변화와 같은 분석상의 Artifact가 발생하게 된다. 일반적으로 Q-SIMS의 경우에는 RSF의 RSD(Relative Standard Deviation)가 1%이내에서 보고되고 있지만 M-SIMS에 있어서는 이러한 Deviation이 M-SIMS보다 크게 나타난다. 이 차이는 주로 Sample Holder와 Immersion Lens 사이에 형성되는 Magnetic Field의 왜곡과 Spectrometer의 문제로부터 발생한다. 본 논문에서는 Sample Holder의 종류 및 holder so window 위치에 따라 RSF의 차이를 측정하고 그 data를 RS/1 통계 Package를 이용하여 계량적으로 검증하였으며, 그 차이의 원인과 대책을 제시하고자 한다. 실험에 사용된 Sample은 Si(100) p-type Wafer에 Boron을 이온 주입하여 제작하였다. 이온 주입 장비는 Varian E-500HP이며, 5.0E13 ions/cm2의 dose양을 80keV의 Energy로 각각 7도와 22도의 Tilt와 Twist Angle로 이온 주입을 하였다. SIMS분석에 사용된 Sample Holder는 각각 3 Hole, 9 Hole Type HOlder이며, 분석은 Cameca IMS-6f를 사용하여 B에 대한 Matrix Peak으로 28Si++를 얻었다. 실험 결과 3 Hole Type Sample Holder의 경우 RSF의 RSD는 5.84%, 9Hle Type Sample Holder의 경우는 14.3%로 나타났으나 분석 Window의 위치에 따르는 Grouping을 실시한 결과, 3 Hole Type Sample Holder의 경우 1.2%, 9Hole Type Sample Holder의 경우 9.8%로 RSF의 변화가 감소하였다. 이러한 Deviation은 Sample Holder를 Mount시킬 때 세 개의 Screw를 이용하여 Immersion Lens와의 평형을 잡아주기 때문에 발생하며, 이 Munting을 정확히 해줌으로써 RSF의 변화를 줄일 수 있으나, 실제로 완벽한 Mounting이 불가능하기 때문에 RSF를 일정하게 하기 위해서는 Sample Holder so Window의 취치를 일정하게 설정한 후 분석을 실시해야 한다고 판단된다.

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A New process for the Solid phase Crystallization of a-Si by the thin film heaters (박막히터를 사용한 비정질 실리콘의 고상결정화)

  • 김병동;정인영;송남규;주승기
    • Journal of the Korean Vacuum Society
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    • v.12 no.3
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    • pp.168-173
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    • 2003
  • Recently, according to the rapid progress in Flat-panel-display industry, there has been a growing interest in the poly-Si process. Compared with a-Si, poly-Si offers significantly high carrier mobility, so it has many advantages to high response rate in Thin Film Transistors (TFT's). We have investigated a new process for the high temperature Solid Phase Crystallization (SPC) of a-Si films without any damages on glass substrates using thin film heater. because the thin film heater annealing method is a very rapid thermal process, it has very low thermal budget compared to the conventional furnace annealing. therefore it has some characteristics such as selective area crystallization, high temperature annealing using glass substrates. A 500 $\AA$-thick a-Si film was crystallized by the heat transferred from the resistively heated thin film heaters through $SiO_2$ intermediate layer. a 1000 $\AA$-thick $TiSi_2$ thin film confined to have 15 $\textrm{mm}^{-1}$ length and various line width from 200 to 400 $\mu\textrm{m}$ was used as the thin film heater. By this method, we successfully crystallized 500 $\AA$-thick a-Si thin films at a high temperature estimated above $850^{\circ}C$ in a few seconds without any thermal deformation of g1ass substrates. These surprising results were due to the very small thermal budget of the thin film heaters and rapid thermal behavior such as fast heating and cooling. Moreover, we investigated the time dependency of the SPC of a-Si films by observing the crystallization phenomena at every 20 seconds during annealing process. We suggests the individual managements of nucleation and grain growth steps of poly-Si in SPC of a-Si with the precise control of annealing temperature. In conclusion, we show the SPC of a-Si by the thin film heaters and many advantages of the thin film heater annealing over other processes

The Effect of CTSA Treatment on the Corrosion Resistance of AA5052 Alloy (AA5052 합금의 내식성에 영향을 미치는 CTSA처리의 영향)

  • Gu, Ga-Yeong;Bae, Seong-Hwa;Son, In-Jun;Jeong, So-Yeong;Baek, Ji-Yeon;Im, Lee-Geun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.91-91
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    • 2018
  • 스마트폰 및 카메라 케이스 등에 널리 적용되고 있는 알루미늄은 내식성, 내마모성과 같은 물리적, 화학적 성질이 우수하지 못하여 이를 향상시키기 위해 양극산화법이 산업적으로 널리 이용되고 있다. 알루미늄에 양극산화법을 적용하면 강도, 내마모성 및 내식성이 향상될 뿐만 아니라 알루미늄 표면에 규칙적으로 배열된 30nm~100nm 크기의 pore에 염료를 흡착시켜 다양한 색상의 외관을 가지는 양극산화피막을 형성시킬 수 있다. Pore간의 간격은 수십 nm~수백 nm 정도이며, pore의 크기와 간격 및 깊이는 양극산화조건(양극산화 전압, 전해액의 종류와 농도 및 온도)에 의해 크게 변화한다. 본 연구에서는 CTSA를 통한 AA5052합금의 양극산화 착색처리와 내식성의 개선 여부를 조사하였다. 알루미늄은 Al5052에는 Mg 외에, 소량의 Si을 포함하고 있다. 이 Si는 알루미늄 표면에 석출물 형태로 존재한다. 이 Si 석출물은 양극산화 시 기지상의 알루미늄 표면의 pore 형성을 방해하는 원인이다. 이러한 Si 석출물의 존재가 균일한 pore 형성을 방해하게 되고, 불균일한 포어를 가지는 표면은 착색처리 시 색상의 편차를 크게하는 원인이 되어 불량률을 높인다. 이러한 요인을 개선하기 위해 CTSA의 처리조건을 최적화 하였다. Al5052 합금을 이용하여 에칭, 디스머트, CTSA처리를 실시하였다. $55^{\circ}C$ 100g/L NaOH 용액에서 에칭을, $25^{\circ}C$ 10 vol.% $HNO_3$ 용액에서 디스머트를 실시한 다음, CTSA의 조건을 다르게 하고 SEM을 통해 Si 석출물의 감소율을 비교하였다. CTSA조건으로는 시간(60s, 180s, 300s), 농도(10%, 20%, 30%, 40%) 및 온도($25^{\circ}C$, $40^{\circ}C$, $50^{\circ}C$, $60^{\circ}C$)를 변화시켰으며, CTSA 처리 전과 후의 시편의 위치를 동일하게 하여 비교하였다. 결과 적정 시간, 농도, 온도 조건하에 pore를 불균일하게 하는 Si 석출물들이 제거되는 것을 확인할 수 있었다. CTSA 처리는 온도가 높을수록, 시간이 길수록, 농도가 적당히 진할수록 석출물이 잘 제거되는 것을 확인하였다. 또한 CTSA처리가 알루미늄의 내식성에 미치는 영향을 확인하기 위해서 침적시험에 의한 무게감소율 및 전기화학측정을 실시하였다.

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실리콘의 정제 효과에 미치는 반복 플라즈마 용해의 영향

  • Choe, Guk-Seon;Im, Jae-Won;Jo, Seong-Uk;O, Jeong-Min;Kim, Jun-Su;Ha, Beom-Yong;Kim, Dong-Ho
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.11a
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    • pp.37.2-37.2
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    • 2009
  • 태양전지 산업의 급속한 발전에 따라 고순도 실리콘을 경제적으로 제조하려는 노력이 경주되고 있다. 이중금속 실리콘(MG)의 정제에 의한 태양전지 실리콘(SoG) 제조에관한 연구가 더욱 더 주목받고 있다. 본 연구에서는 고순도 금속 실리콘 정제 연구의 일환으로 금속 실리콘에 대한 플라즈마 용해시 불순물 정제 가능성에 대한 기초연구를 수행하였다. 먼저 4N 급 Ar 금속 실리콘을 출발물질로 하여 반복 용해횟수(용해시간)를 달리하여 200g 급 Si button을 제조하였다. 이후 화학적 분석법으로 B, P 및 미량 금속 불순물 평가를 실시하였으며, 이로부터 Ar 플라즈마의 정제 효과를 분석하고자 하였다.

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AN EXTENSION OF AN ANALYTIC FORMULA OF THE DETERMINISTIC EPIDEMICS MODEL PROBLEM THROUGH LIE GROUP OF OPERATORS

  • Kumar, Hemant;Kumari, Shilesh
    • Bulletin of the Korean Mathematical Society
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    • v.47 no.6
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    • pp.1131-1138
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    • 2010
  • In the present paper, we evaluate an analytic formula as a solution of Susceptible Infective (SI) model problem for communicable disease in which the daily contact rate (C(N)) is supposed to be varied linearly with population size N(t) that is large so that it is considered as a continuous variable of time t. Again, we introduce some Lie group of operators to make an extension of above analytic formula of the determin-istic epidemics model problem. Finally, we discuss some of its particular cases.

Fabriaction of bump bounded piezoresistive silicon accelerometer (범프 본딩된 압저항 실리콘 가속도센서의 제조)

  • 심준환;이상호;이종현
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.7
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    • pp.30-36
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    • 1997
  • Bump bonded piezoesistive silicon accelerometer was fabricated by the porous silicon micromachining and th eprocess technique of integrated circuit. The output voltage of the accelerometer fabricated on (111)-oreiented Si substrates with n/n$^{+}$n triple layers showed good linear characteristic of less than 1%. The measured sensitivity and the resonant frequency was about 743 .mu.V/g and 2.04 kHz, respectively. And the transverse sensitivity of 5.2% was measured from the accelerometer. Also, to investigate an influence on the output characteristics of the sensor due to bump bonding, the values of the piezoresistors were measured through thermal-cycling test in the temperature variation form -50 to 120.deg. C. Then, there was 0.014% resistance changes about 3.61 k.ohm., so sthe output charcteristics of the sensor was less affected by bump bonding.g.

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Oxygen Sites in Quaternary Ca-Na Aluminosilicate Classes : O-17 Solid-State NMR Study (사성분계 비정질 Ca-Na 알루미노규산염의 산소주변의 원자구조 : O-17 고상핵자기 공명분광학분석)

  • Sung, So-Young;Lee, Sung-Keun
    • Journal of the Mineralogical Society of Korea
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    • v.19 no.4 s.50
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    • pp.347-353
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    • 2006
  • The atomic-nano scale structures of multi-component aluminosilicate glasses have not been well understood in spite of its implications fur dynamics and generation of magma in the natural system due to lack of suitable spectroscopic and scattering experiments. Here, we report O-17 MAS and isotropic projection of 3QMAS NMR spectra for quaternary Na-Ca silicate glasses $[(CaO)_x(Na_2O)_{1-x}]\;(A1_2O_3)_{0.5}(SiO_2)_6,\;CNAS)$ at 14.1 Tesla where atomic configurations around bridging oxygen (Si-O-Si, Si-O-Al) and non bridging oxygen (Na-O-Si, Ca-O-Si, (Na, Ca)-O-Si) are partially resolved. With increasing Na content, the fraction of Na-O-Si increases while those for bridging oxygens remain constant. The Na/Ca ratio apparently affects the peak widths of bridging oxygen peaks (e.g., Si-O-Si)) and thus the topological entropy as well as chemical shifts of the bridging oxygen peaks, implying that both BOs and NBOs are strongly interacting with network modifying cations The effect of cation field strength on the degree of Al-avoidance was also discussed.

DFT Study for the Thermodynamic Stability and Binding Energeticsof SnOn, SnO2n, SnO3n (n = 1~4) (SnOn, SnO2n, SnO3n (n = 1~4)의 열역학적 안정성과 결합에너지에 대한 DFT 이론 연구)

  • Kim, Si-Jo;Kim, Seung-Joon
    • Journal of the Korean Chemical Society
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    • v.53 no.5
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    • pp.512-520
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    • 2009
  • The theoretical calculations for $S_nO_n,\;S_nO_{2n},\;S_nO_{3n}\;(n\;=\;1{\sim}4)$ have been considered at the B3LYP level of theory with various basis sets. The optimized geometries, harmonic vibrational frequencies, and binding energies are evaluated to elucidate the thermodynamic stability and spectroscopic properties. The harmonic vibrational frequencies for the molecules considered in this study show all real numbers implying true minima. The binding energies due to increasing of $S_nO_n,\;S_nO_{2n},\;S_nO_{3n}$ monomers are calculated at the MP2/6-311G** level of theory. For $S_nO_n\;(n\;=\;1{\sim}4)$, the binding energy difference is about 20∼25 kcal/mol by adding SO monomer. For $SO_2\;and\;SO_3\;(n\;=\;1{\sim}4)$, the binding energy differences are relatively small by comparing to $S_nO_n$.

Application of multimodal surfaces using amorphous silicon (a-Si) thin film for secondary ion mass spectrometry (SIMS) and laser desorption/ionization mass spectrometry (LDI-MS)

  • Kim, Shin Hye;Lee, Tae Geol;Yoon, Sohee
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.384.1-384.1
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    • 2016
  • We reported that amorphous silicon (a-Si) thin film provide sample plate exhibiting a multimodality to measure biomolecules by secondary ion mass spectrometry (SIMS) and laser desorption/ionization mass spectrometry (LDI-MS). Kim et al.1 reported that a-Si thin film were suitable to detect small molecules such as drugs and peptides by SIMS and LDI-MS. Recently, bacterial identification has been required in many fields such as food analysis, veterinary science, ecology, agriculture, and so on.2 Mass spectrometry is emerging for identifying and profiling microbiology samples from its advantageous characters of label-free and shot-time analysis. Five species of bacteria - S. aureus, G. glutamicum, B. kurstaki, B. sphaericus, and B. licheniformis - were sampled for MS analysis without lipid extraction in sample preparation steps. The samples were loaded onto the a-Si thin film with a thickness of 100 nm which did not only considered laser-beam penetration but also surface homogeneity. Mass spectra were recorded in both positive and negative ionization modes for more analytical information. High reproducibility and sensitivity of mass spectra were demonstrated in a mass range up to mass-to-charge ratio(m/z) 1200 by applying the a-Si thin film in mentioned above MS. Principle component analysis (PCA) - a popular statistical analysis widely used in data processing was employed to differentiate between five bacterial species. The PCA results verified that each bacterial species were readily distinguished and differentiated effectively from our MS approach. It shows a new opportunity to rapid bacterial profiling and identification in clinical microbiology. More details will be discussed in the presentation.

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The Factors Affecting the Unconfined Compressive Strength of C.S.G Materials (C.S.G 재료의 일축압축강도에 미치는 영향인자)

  • Kim, Ki-Young
    • Journal of the Korean Geotechnical Society
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    • v.22 no.10
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    • pp.33-45
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    • 2006
  • C.S.G is a material made by adding cement and water to rock-like material such as riverbed gravel or excavation muck that can be obtained easily near dam si. Recently, the use of C.S.G is gradually increasing as the construction material for dam, road, revement and so on. Commonly, the strength characteristics of C.S.G is affected by various influence factors such as grade, unit cement, age and water contents. In this study, a series of compaction test and unconfined compressive strength test were performed to investigate the relationship between a strength and influence factors such as three kinds of gradation, age, unit cement and water contents with riverbed gravel in Hwa Buk dam. The results show that strength Properties of C.S.G is variously affected by these influence factors. Especially, gradation and water contents are found to be very important factors fur determining the strength of C.S.G material. And, from the results of experimental study, the correlation equations between uncompressive strength and these factors are proposed.