• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.213-219
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• 1994

The formations of spinel and colors of ZnO-Fe2O3-TiO2-SnO2 system have been researched on the basis of ZnO-Fe2O3 system. Specimens were prepared by substituting Fe3+, with Ti4+ or Sn4+ when mole ratios between Fe3+ and Ti4+ or between Fe3+ and Sn4+ were 0.2 mole. The reflectance measurement and X-ray diffraction analysis of the formation of spinel and the colors of there specimens were carried out. ZnO-Fe2O3 system in which Fe2O3 was substituted with SnO2 and TiO2 was formed the spinel structure of 2ZnO.TiO2, 2ZnO.SnO2, ZnO.Fe2O3. The stable stains which were colored with yellow and brown could be manufactured.

• Journal of the Korean Chemical Society
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• v.24 no.3
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• pp.183-192
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• 1980

Oxidation reactions of carbon monoxide on $SnO_2$, Sb-doped $SnO_2$, and Pt catalyst were studied. The oxidation reaction was found to be first order with respect to both CO and O$_2$ on $SnO_2$ and Sb-doped $SnO_2$ catalysts, and to be of half order on Pt catalyst. A small addition of Sb to $SnO_2$ (depant composition: 0.05∼0.1 mol %) increased the rate of oxidation. On the contrary, a large addition decreased the rate. From the rate expression of oxidation on Pt catalyst, the inhibition effect of carbon monoxide on the rate of oxidation was deduced. The experimentally obtained activatio energies were 5.7 kcal for the Sb doped $SnO_2$ catalyst (dopant composion: 0.05 mole%), and 6.4 kcal for the Pt catalyst. A possible reaction mechanism was proposed from the experimentally obtained kinetic data.

• ETRI Journal
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• v.37 no.6
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• pp.1135-1142
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• 2015

Multilayered ZnO-$SnO_2$ heterostructure thin films consisting of ZnO and $SnO_2$ layers are produced by alternating the pulsed laser ablation of ZnO and $SnO_2$ targets, and their structural and field-effect electronic transport properties are investigated as a function of the thickness of the ZnO and $SnO_2$ layers. The performance parameters of amorphous multilayered ZnO-$SnO_2$ heterostructure thin-film transistors (TFTs) are highly dependent on the thickness of the ZnO and $SnO_2$ layers. A highest electron mobility of $43cm^2/V{\cdot}s$, a low subthreshold swing of a 0.22 V/dec, a threshold voltage of 1 V, and a high drain current on-to-off ratio of $10^{10}$ are obtained for the amorphous multilayered ZnO(1.5nm)-$SnO_2$(1.5 nm) heterostructure TFTs, which is adequate for the operation of next-generation microelectronic devices. These results are presumed to be due to the unique electronic structure of amorphous multilayered ZnO-$SnO_2$ heterostructure film consisting of ZnO, $SnO_2$, and ZnO-$SnO_2$ interface layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.865-868
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• 2002

$SnO_2$ powders were prepare by precipitating $Sn(OH)_4$ from an aqueous solution of $SnCl_4{\cdot}5H_2O$, pH 9.5. The effects of stability and sensitivity of $SnO_2$ thick film sensors added with various amounts, $SiO_2$, $Al_2O_3$, $ZrO_2$, $TiO_2$ have been investigated. It is shown that the 3wt% $Al_2O_3$ or $SiO_2$ can improve the stability of $SnO_2$ gas sensor at an operating temperature of $350^{\circ}C$.

• Applied Chemistry for Engineering
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• v.21 no.4
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• pp.440-444
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• 2010

$SnO_2$ powders were prepared from the calcination of stannic acids precipitated from the aqueous solution of $SnCl_4$ with ammonium nitrate as a precipitator at $90^{\circ}C$. For the comparison of properties, the stannic acids were prepared from the homogeneous precipitation method using urea as a precipitator at the same temperature. The stannic acid from ammonium nitrate at a thermal gravity analysis showed the weight loss until $700^{\circ}C$ and the percentage of total weight loss was 16.5%. The crystallization of stannic acid into $SnO_2$ finished in the calcination at $600^{\circ}C$ for 2 h. The crystallite size of $SnO_2$ increased with the increase of calcination temperature and initial concentration of $SnCl_4$ solution. In case of the same calcination condition, $SnO_2$ prepared from homogeneous precipitation using urea had a relatively smaller crystallite size rather than $SnO_2$ prepared from ammonium nitrate.

• Bulletin of the Korean Chemical Society
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• v.32 no.6
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• pp.1912-1920
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• 2011

The $SnO_2$ with a particle size of about 300 nm instead of Ni is used in this study to overcome rapid catalytic deactivation by the formation of a $NiAl_2O_4$ spinal structure on the conventional Ni/${\gamma}$-$Al_2O_3$ catalyst and simultaneously impregnated the catalyst with potassium (K). The $SnO_2-K_2O$ impregnated Zeolite Y catalyst ($SnO_2-K_2O$/ZY) exhibited significantly higher ethanol reforming reactivity that that achieved with $SnO_2$ 100 and $SnO_2$ 30 wt %/ZY catalysts. The main products from ethanol steam reforming (ESR) over the $SnO_2$-$K_2O$/ZY catalyst were $H_2$, $CO_2$, and $CH_4$, with no evidence of any CO molecule formation. The $H_2$ production and ethanol conversion were maximized at 89% and 100%, respectively, over $SnO_2$ 30 wt %-$K_2O$ 3.0 wt %/ZY at 600 $^{\circ}C$ for 1 h at a $CH_3CH_2OH:H_2O$ ratio of 1:1 and a gas hourly space velocity (GHSV) of 12,700 $h^{-1}$. No catalytic deactivation occurred for up to 73 h. This result is attributable to the easier and weaker of reduction of Sn components and acidities over $SnO_2-K_2O$/ZY catalyst, respectively, than those of Ni/${\gamma}$-$Al_2O_3$ catalysts.

• Current Photovoltaic Research
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• v.3 no.2
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• pp.54-60
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• 2015

ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.546-549
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• 2011

Nano-sized $SnO_2$ thick films were prepared by a screen-printing method onto $Al_2O_3$ substrates. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a test box as a function of the detection gas. The nano-sized $SnO_2$ thick film sensors were treated in a $N_2$ atmosphere. The structural properties of the nano $SnO_2$with a rutile structure according to XRD showed a (110) dominant $SnO_2$ peak. The particle size of $SnO_2$:Ni nano powders at Ni 8 wt% was about 45 nm, and the $SnO_2$ particles were found to contain many pores according to the SEM analysis. The sensitivity of the nano $SnO_2$-based sensors was measured for 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air with that in the target gases. The results showed that the best sensitivity of $SnO_2$:Ni and $SnO_2$:Co sensors for $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature was observed in $SnO_2$:Ni sensors doped with 8 wt% Ni. The response time of the $SnO_2$:Ni gas sensors was 10 seconds and recovery time was 15 seconds for the $CH_4$ and $CH_3CH_2CH_3$ gases.

• Journal of Sensor Science and Technology
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• v.21 no.6
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• pp.456-460
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• 2012

Au/$SnO_2$ core-shell structure nanoparticles (NPs) were synthesized by microwave hydrothermal method, and the effect of working temperature on sensitivity of Au/$SnO_2$ core-shell NPs for CO gas was investigated. The $SnO_2$ shell layer was consisted of $SnO_2$ primary particles with 4.5 nm diameter. The response of Au/$SnO_2$ core-shell NPs for CO gas was maximized at the working temperature of $350^{\circ}C$ while the sensitivity increased with decreasing the working temperature due to the low grain size effect of $SnO_2$ NPs on the response of CO gas.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.224-226
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• 2007

Hydrothermal 방법에 의해 준비된 $SnO_{2}$ 나노구조의 Pt의 구조적 특징을 알아보기 위해 X-ray diffraction (XRD), transmission electron microscopy (TEM) 을 통해서 확인할 수 있었다. 그리고 $Pt/SnO_{2}$ 나노구조 촉매의 cyclic voltammogram(CV) 통해서 전기화학적 특정을 알아보았다. XRD와 TEM 결과를 통해서 $SnO_{2}$의 나노결정성 입자의 크기는 121 nm임을 확인할 수 있었고 작은 입자가 서로 뭉쳐지면서 핵을 형성한 후 입자의 크기가 점차 증가한다는 것을 알 수 있었다. 그리고 Pt 촉매의 나노결정성 입자의 크기는 4 nm로 확인하였다. 또한 $SnO_{2}$에 Pt촉매의 결정성 입자의 구성이 잘 형성되었음을 확인하였고, 전기화학적 분석을 통해서는 에탄올 산화환원반응과 다결정 Pt의 존재를 확인하였다. 특히 에탄올에 대한 산화반응의 특성을 보이며, 이는 $SnO_{2}$의 에탄올산화반응용 지지체로써의 가능성을 의미한다.