• Journal of Welding and Joining
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• v.25 no.6
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• pp.78-83
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• 2007

The wettability of Sn-Xwt%Cu(X=$0{\sim}3wt%$) solder was evaluated with wetting balance tester. And, the intermetallic compounds(IMCs) which were formed at the interface between solders and pads were investigated by using scanning electron microscopy(SEM) and energy dispersive spectroscopy(EDS). The wetting force of Sn-0.7wt%Cu solder was higher than that of 100wt%Sn and Sn-3.0wt%Cu solder. The value of $\gamma_{fl}$ and ($\gamma_{fs}-\gamma_{ls}$) had a tendency to increase with increasing the wetting temperature. The activation energy with bare Cu pad and flux with 15% solid content was increased in the following order: Sn-0.7Cu (68.42 kJ/mol) ; Sn-3.0Cu(72.66 kJ/mol) ; Sn solder(94.53 kJ/mol). It was identified that the Cu6Sn5 phase was formed at the interface between Sn-Xwt%Cu solder and Cu pad.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.59-64
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• 2013

In-situ annealing tests of Cu/Ni/Au/Sn-Ag/Cu micro-bump for 3D IC package were performed in an scanning electron microscope chamber at $135-170^{\circ}C$ in order to investigate the growth kinetics of intermetallic compound (IMC). The IMC growth behaviors of both $Cu_3Sn$ and $(Cu,Ni,Au)_6Sn_5$ follow linear relationship with the square root of the annealing time, which could be understood by the dominant diffusion mechanism. Two IMC phases with slightly different compositions, that is, $(Cu,Au^a)_6Sn_5$ and $(Cu,Au^b)_6Sn_5$ formed at Cu/solder interface after bonding and grew with increased annealing time. By the way, $Cu_3Sn$ and $(Cu,Au^b)_6Sn_5$ phases formed at the interfaces between $(Cu,Ni,Au)_6Sn_5$ and Ni/Sn, respectively, and both grew with increased annealing time. The activation energies for $Cu_3Sn$ and $(Cu,Ni,Au)_6Sn_5$ IMC growths during annealing were 0.69 and 0.84 eV, respectively, where Ni layer seems to serve as diffusion barrier for extensive Cu-Sn IMC formation which is expected to contribute to the improvement of electrical reliability of micro-bump.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.175.1-175.1
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• 2015

CuSn thin films were deposited by rf magnetron co-sputtering method with pure Cu and Sn metal targets with a variety of rf powers. CuSn thin films were studied with a surface profiler (alpha step), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), X-ray diffraction (XRD), and contact angle measurement. The thickness of CuSn thin films was fixed at $200{\pm}10nm$ and deposition rate was calculated by the measured with a surface profiler. From the survey XPS spectra, the characteristic peaks of Cu and Sn were observed. Therefore, CuSn thin films were successfully synthesized on the Si (100) substrate. The oxidation state and chemical environment of Cu and Sn were investigated with the binding energy regions of Cu 2p XPS spectra, Sn 3d XPS spectra, and Cu LMM Auger spectra. Change of the crystallinity of the films was observed with XRD spectra. Using contact angle measurement, surface free energy (SFE) and wettability of the CuSn thin films were studied with distilled water (DW) and ethylene glycol (EG).

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.13-19
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• 2000

Shear strengths of BGA solder joints on Cu pads were studied for Cu-containing Sn (0, 1.5, and 2.5 wt.% Cu) and Sn-40Pb (0 and 0.5wt.% Cu) solders, with emphasis on the roles of the Cu-Sn intermetallic layer thickness and the roughness of the interface between the intermetalic layer and solder. The shear strength test was performed for as-soldered solder joints with various soldering reaction times up to 4 min. The addition of Cu to the pure Sn solder results in an enhanced growth of the intermetallic layer whereas the effect of Cu addition to the Sn-40Pb solder is primarily on the reduction of the roughness of the intermetallic/solder interface. The critical thickness of the intermetallic layer for a maximum shear strength depends on the solder materials, which was measured to be ~ 2.3 $\mu\textrm{m}$ for Sn-Cu solders and ~ 1.2 $\mu\textrm{m}$ for Sn-Pb-Cu solders. The shear strength at the critical intermetallic layer thickness seems to increase as the intermetallic/solder interface becomes rougher. This is in accordance with the observation that the sheared fracture occurred initially within the solder tends to shift towards the intermetallic/solder interface as the intermetallic layer grows above the critical thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.640-644
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• 2000

The microstructure, wettability, shear strength and aging effect of Sn-3.5Ag/Cu and Alloy42 lead-frame solder joints were measured for comparison. In the case of Sn-3.5Ag/Cu, Ag$_3$Sn and Cu$\sub$6/Sn$\sub$5/ phases in the matrix Sn and 1∼2$\mu\textrm{m}$ thick Cu$\sub$6/Sn$\sub$5/ Phase at the interface of solder/lead-frame were formed. In the case of Sn-3.5AAg/A11oy42, only Ag$_3$Sn Phase of low density in the matrix Sn and 0.5∼1.5$\mu\textrm{m}$ thick FeSn$_2$phase at the interface of solder/lead-frame were formed. Comparing to Cu, Alloy42 shear strength of Alloy 42 solder joints was smaller than that of Cu and all declined after aging. After aging at 180$^{\circ}C$ for 1 week, η-Cu$\sub$6/Sn$\sub$5/ layer was formed on Cu lead-frame, while AgSn$_3$ phase in the matrix and thickened FeSn$_2$at the interface were formed on Alloy42 lead-frame.

• Korean Journal of Metals and Materials
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• v.46 no.9
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• pp.585-592
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• 2008

Flip-chip bonding using Cu-Sn mushroom bumps composed of Cu pillar and Sn cap was accomplished, and the contact resistance and the thermal cycling reliability of the Cu-Sn mushroom bump joints were compared with those of the Sn planar bump joints. With flip-chip process at a same bonding stress, both the Cu-Sn mushroom bump joints and the Sn planar bump joints exhibited an almost identical average contact resistance. With increasing a bonding stress from 32 MPa to 44MPa, the average contact resistances of the Cu-Sn mushroom bump joints and the Sn planar bump joints became reduced from $30m{\Omega}/bump$ to $25m{\Omega}/bump$ due to heavier plastic deformation of the bumps. The Cu-Sn mushroom bump joints exhibited a superior thermal cycling reliability to that of the Sn planar bump joints at a bonding stress of 32 MPa. While the contact resistance characteristics of the Cu-Sn mushroom bump joints were not deteriorated even after 1000 thermal cycles ranging between $-40^{\circ}C$ and $80^{\circ}C$, the contact resistance of the Sn planar bump joints substantially increased with thermal cycling.

• Tribology and Lubricants
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• v.37 no.3
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• pp.83-90
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• 2021

In this study, an ultrasonic nanocrystal surface modification (UNSM) was used to improve the mechanical properties, scratch resistance and tribological performance of Cu-based bimetals, which are usually used to manufacture sliding bearings and bushings for internal combustion engines (ICEs). Two different Cu-based bimetals, namely CuPb10Sn10 and CuSn10Bi7, were sintered onto a low carbon steel substrate. The mechanical properties and dry tribological performance using a tensile tester and micro-tribo tester were evaluated, respectively. The scratch resistance was assessed using a micro-scratch tester at an incremental load. The tensile test results showed that the yield strength (YS) and ultimate tensile strength (UTS) of both Cu-based bimetals increased after UNSM. Furthermore, the scratch and tribological tests results revealed that the scratch resistance and tribological performance of both Cu-based bimetals were improved by the application of UNSM. These improvements were mainly attributed to the eliminated pores, increased hardness and reduced roughness after UNSM. CuSn10Bi7 demonstrated better mechanical properties, scratch resistance and tribological performance than CuPb10Sn10. It was found that the presence of Bi in CuSn10Bi7 formed a Cu₁₁Bi₇ intermetallic phase, which is harder than Cu₃Sn. Hence, CuSn10Bi7 demonstrated higher strength and wear resistance than CuPb10Sn10. In addition, a CuSn10Bi7 formed both SnO₂ and Bi₂O₃ that prevented adhesion and improved the tribological performance. It can be expected that under dry tribological conditions, ICEs can utilize UNSM bearings and bushings made of CuSn10Bi7 instead of CuPb10Sn10 under oil-lubricated conditions.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.3
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• pp.55-61
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• 2000

Sn-37Pb and Sn-3.5Ag-0.7Cu solder balls of 0.3 mm diameter were reflow soldered with the variation of soldering peak temperature and conveyer speed of reflow machine. The peak temperatures far soldering were changed in the range of 220~$240^{\circ}C$ for Sn-37Pb and 230~$260^{\circ}C$ for Sn-3.5Ag-0.7Cu. As the results of experiments, optimum soldering condition for Sn-37Pb was $230^{\circ}C$ of soldering temp., 0.7~0.8 m/min of conveyer speed. The optimum condition for the Sn-3.5Ag-0.7Cu was $250^{\circ}C$ and 0.6 m/min. The maximum shear strength for the soldered joints of Sn-37Pb was 555 gf and of Sn-3.5Ag-0.7Cu was 617 gf. Thickness of the intermetallic compound Cu6Sn5 on the soldered interface was 1.13~1.45 $\mu\textrm{m}$ for Sn-37Pb and 2.5~4.3 $\mu\textrm{m}$ for Sn-3.5Ag-0.7Cu.

• Korean Journal of Materials Research
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• v.17 no.8
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• pp.402-407
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• 2007

In electronics manufacturing processes, soldering process has generally been used in surface mounting technology. Because of environmental restriction, lead free solders as like a SnAgCu ternary system are being used widely. After soldering process, the formation and growth of intermetalic compounds(IMCs) are formed in the interface between solder and Cu substrate as follows isothermal temperature and time. In this studies, therefore, we investigated the effects of the Cu substrate thickness on the IMC formation and growth of Sn-40Pb/Cu and Sn-3.0Ag-0.5Cu/Cu solder joints, respectively. The effect of the Cu thickness in PCB Cu pad and pure Cu plate was analyzed as measuring of thickness of each IMC. After solder was soldered on PCB and Cu plate which have different Cu thickness, we measured the IMC thickness in solder joints respectively. Also we compared with the effectiveness of Cu thickness on the IMC growth. From these results, we calculated the activation energy.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.17-24
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• 2008

Thermal annealing and electromigration test were performed at $150^{\circ}C$ and $150^{\circ}C,\;5{\times}10^4\;A/cm^2$ conditions, respectively, in order to compare the growth kinetics of intermetallic compound(IMC) in Cu pillar bump. The quantitative interfacial adhesion energy with annealing was measured by using four-point bending strength test in order to assess the effect of IMC growth on the mechanical reliability of Cu pillar bump. Only $Cu_6Sn_5$ was observed in the Cu pillar/Sn interface after reflow. However, $Cu_3Sn$ formed and grew at Cu pillar/$Cu_6Sn_5$ interface with increasing annealing and stressing time. The growth kinetics of total($Cu_6Sn_5+Cu_3Sn$) IMC changed when all Sn phases in Cu pillar bump were exhausted. The complete consumption time of Sn phase in electromigration condition was faster than that in annealing condition. The quantitative interfacial adhesion energy after 24h at $180^{\circ}C$ was $0.28J/m^2$ while it was $3.37J/m^2$ before annealing. Therefore, the growth of IMC seem to strongly affect the mechanical reliability of Cu pillar bump.