• Applied Biological Chemistry
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• v.39 no.5
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• pp.349-354
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• 1996

The Polyvinyl alcohol(PVA) oxidase involved in PVA degradation by microorganism has been purified to homogeneity from culture broth of Xanthomonas campestris J2Y grown in a minimal medium containing PVA as a sole carbon source. The enzyme was purified by DEAE-cellulose chromatograpy and Sephadex G-150 gel filtration. The purified PVA oxidase was electrophoretically homogeneous both in the absence and presence of SDS. The molecular weight of the enzyme was estimated to be about 55,000 daltons by SDS-polyacrylamide gel electrophoresis and Sephadex G-150 gel filtration. The native enzyme existed as a monomer. The optimal pH and temperature was shown to be pH 7 and $37^{\circ}C$ respectively. The activity of enzyme was stable below $55^{\circ}C$ and between pH range of $5{\sim}11$. The enzyme activity was significantly inhibited by metal compounds such as $Ag^{2+},\;Hg^{2+}$. While, metal ions such as $Mn^{2+},\;and\;Cu^{2+}$ stimulated the reaction. Km value of the enzyme for PVA was $7.04{\times}10^{-2}mmol/{\ell}$.

• Journal of Welding and Joining
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• v.26 no.3
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• pp.30-36
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• 2008

A flip-chip bonding system using IR laser with a wavelength of 1064 nm was developed and associated process parameters were analyzed using Taguchi methods. An infrared laser beam is designed to transmit through a silicon chip and used for transferring laser energy directly to micro-bumps. This process has several advantages: minimized heat affect zone, fast bonding and good reliability in the microchip bonding interface. Approximately 50 % of the irradiated energy can be directly used for bonding the solder bumps with a few seconds of bonding time. A flip-chip with 120 solder bumps was used for this experiment and the composition of the solder bump was Sn3.0Ag0.5Cu. The main processing parameters for IR laser flip-chip bonding were laser power, scanning speed, a spot size and UBM thickness. Taguchi methods were applied for optimizing these four main processing parameters. The optimized bump shape and its shear force were modeled and the experimental results were compared with them. The analysis results indicate that the bump shape and its shear force are dominantly influenced by laser power and scanning speed over a laser spot size. In addition, various effects of processing parameters for IR laser flip-chip bonding are presented and discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.949-954
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• 2011

In this study, the characteristics and error ranges of the mechanical bonding strength were analyzed according to before and after thermal shock test for various chips of automotive application component using Sn-3.0Ag-0.5Cu solder. In the after thermal shock test, the mechanical bonding strengths tend to decrease, meanwhile decreasing rates of mechanical strengths were less then 12% at specimen's bonding area below 3.5$mm^2$, and were from 17 to 21% at specimen's bonding area above 12 $mm^2$. On the other hand, Specimen's mean deviation rates were about 5% at specimen's bonding area more than 12 $mm^2$. Inversely, at specimen's bonding area is less then 3.5 $mm^2$, mean deviation rates were increased to about 8%. It means that the smaller device size is, the larger mean deviation rate. In addition, error ranges and deviation rates of the mechanical bonding strengths may differ slightly depending on their bonding area. Furthermore, process conditions as well as method of mechanical reliability evaluation should be established to reduce the error ranges of bonding strength.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.245-245
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• 2012

차세대 디스플레이로 각광받고 있는 AMOLED에 대한 관심이 높아짐에 따라 구동 소자의 연구가 활발히 이루어지고 있다. 산화물 반도체 박막 트랜지스터는 비정질 실리콘 박막 트랜지스터에 비해 100 $cm^2$/Vs 이하의 높은 이동도와 우수한 전기적 특성으로 AMOLED 구동 소자로서 학계에서 입증되어왔고, 현재 여러 기업에서 산화물 반도체를 이용한 박막 트랜지스터 제작 연구가 활발히 이루어지고 있다. 본 연구는 열처리 조건을 가변하여 제작한 산화물 반도체 박막 트랜지스터의 전기적 특성 분석을 목적으로 한다. 실리콘 기판에 oxidation 공정을 이용하여 SiO2 100 nm, DC스퍼터링을 이용하여 ITZO (Indium-Tin-Zinc Oxide) 산화물 반도체 박막 50 nm, 증착된 산화물 반도체 박막의 열처리 후, evaporation을 이용하여 source/drain 전극 Ag 150 nm 증착하여 박막 트랜지스터를 제작하였다. 12 sccm의 산소유량, 1시간의 열처리 시간에서 열처리 온도 $400^{\circ}C$, $200^{\circ}C$의 샘플은 각각 이동도 $29.52cm^2/V{\cdot}s$, $16.15cm^2/V{\cdot}s$, 문턱전압 2.61 V, 6.14 V, $S{\cdot}S$ 0.37 V/decade, 0.85 V/decade, on-off ratio 5.21 E+07, 1.10 E+07이었다. 30 sccm의 산소유량, 열처리 온도 $200^{\circ}C$에서 열처리 시간 1시간, 1시간 30분 샘플은 각각 이동도 $12.27cm^2/V{\cdot}s$, $10.15cm^2/V{\cdot}s$, 문턱전압 8.07 V, 4.21 V, $S{\cdot}S$ 0.89 V/decade, 0.71 V/decade, on-off ratio 4.31 E+06, 1.05 E+07이었다. 산화물 반도체의 열처리 효과 분석을 통하여 높은 열처리 온도, 적은 산소의 유량, 열처리 시간이 길수록 이동도, 문턱전압, $S{\cdot}S$의 산화물 박막 트랜지스터 소자의 전기적 특성이 개선되었다.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.2
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• pp.1-8
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• 2018

In the soldering industry, a variety of lead-free solders have been developed as a part of restricting lead in electronic packaging. Sn-Ag-Cu (SAC) lead-free solder is regarded as one of the most superior candidates, owing to its low melting point and high solderability as well as the mechanical property. On the other hand, the mechanical property of SAC solder is directly influenced by intermetallic compounds (IMCs) in the solder joint. Although IMCs in SAC solder play an important role in bonding solder joints and impart strength to the surrounding solder matrix, a large amount of IMCs may cause poor strength, due to their brittle nature. In other words, the mechanical properties of SAC solder are of some concern because of the formation of large and brittle IMCs. As the IMCs grow, they may cause poor device performance, resulting in the failure of the electronic device. Therefore, new solder technologies which can control the IMC growth are necessary to address these issues satisfactorily. There are an advanced nanotechnology for microstructural refinement that lead to improve mechanical properties of solder alloys with nanoparticle additions, which are defined as nano-reinforced solders. These nano-reinforced solders increase the mechanical strength of the solder due to the dispersion hardening as well as solderability of the solder. This paper introduces the nano-reinforced solders, including its principles, types, and various properties.

• Restorative Dentistry and Endodontics
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• v.9 no.1
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• pp.81-87
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• 1983

The purpose of this study was to observe and identify the phases of amalgam and to know the transformation of microstructure in the set amalgam by lapse of time. In this study, shofu spherical-D alloy was used. After trituration of amalgam alloy and mercury (Wig-L-Bug), it was filled in the stone dies. This specimens being polished and etched by usual method was observed under optical microscope using metallurgical microscope. And then X-ray diffractometer was used to analyze the phases contents and transformation of microstructure at $2{\frac{1}{2}}$ hours, 15 hours, 28 hours and 2 years after being amalgamated. The following results were obtained: 1. Shofu spherical-D alloy powder was composed of ${\gamma}$ phase, ${\epsilon}$phase and Ag-Cu eutectic phases. 2. ${\gamma}_2$ phases were appeared at $2{\theta}$ values ($32.0^{\circ}$ and $43.8^{\circ}$) in the amalgam which was analyzed at $2{\frac{1}{2}}$ hours and 15 hours after trituration with mercury. 3. In the amalgam at 28 hours, ${\gamma}_2$ phase was found at $2{\theta}$ value ($43.8^{\circ}$) at 35 hour, $r_2$ phase was appeared at $2{\theta}$ value $32.0^{\circ}$. 4. No ${\gamma}_2$ phases were observed in the 2 years old amalgam. But ${\eta}$ ($Cu_6Sn_5$) phases were found at $2{\eta}$ values $29.4^{\circ}$ and $42.4^{\circ}$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.3
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• pp.681-686
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• 2017

Degradation is commonly observed in field-aged PV modules due to corrosion of the photovoltaic ribbon. The reduced performance is caused by a loss of fill factor due to the high series resistance in the PV ribbon. This study aimed to mitigate the degradation by corrosion using five sacrificial anodes - Al, Zn and their alloys - to identify the most effective material to mitigate the corrosion of the PV ribbon. The corrosion behavior of the five sacrificial anode materials were examined by open circuit potential measurements, potentiodynamic polarization tests, and galvanic current density and potential measurements using a zero resistance ammeter. Immersion tests for 120 hours were also conducted using materials and damp heat test tests were performed for 1500 hours using 4 cell mini modules. The Al-3Mg and Al-3Zn-1Mg sacrificial anodes had a low corrosion rate and reduced drop in power, making then suitable for long-term use.

• Journal of Welding and Joining
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• v.33 no.3
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• pp.25-31
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• 2015

Due to environmental regulations (RoHS, WEEE and ELV) of the European Union, electronics and automotive electronics have to eliminate toxic substance from electronic devices and system. Specifically, reliability issue of lead-free solder joint have an increasing demand for the car electronics caused by ELV banning. The authors prepared engine control unit and cabin electronics soldered with Sn-3.0Ag-0.5Cu (SAC305). To compare with the degradation characteristics of solder joint strength, thermal cycling test (TC), power-thermal cycling test (PTC) and series tests were conducted. Series tests were conducted for TC and PTC combined stress test using the same sample in sequence and continuously. TC test was performed at $-40{\sim}125^{\circ}C$ and soak time 10 min for 1000 cycles. PTC test was applied by pulse power and full function conditions during 100 cycles. Combined stress test was tested in accordance with automotive company standard. Solder joint degradation was observed by optical microscopy and environment scanning electron microscopy (ESEM). In addition, to compare with deterioration of bond strength of quad flat package (QFP) and chip components, we have measured lead pull and shear strength. Based on the series test results, consequently, we have validated of series test method for lifetime and reliability of Pb-free solder joint in automotive electronics.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.2
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• pp.55-59
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• 2015

Novel low-volume solder-on-pad (SoP) process is proposed for a fine pitch Cu pillar bump interconnection. A novel solder bumping material (SBM) has been developed for the $60{\mu}m$ pitch SoP using screen printing process. SBM, which is composed of ternary Sn-3.0Ag-0.5Cu (SAC305) solder powder and a polymer resin, is a paste material to perform a fine-pitch SoP in place of the electroplating process. By optimizing the volumetric ratio of the resin, deoxidizing agent, and SAC305 solder powder; the oxide layers on the solder powder and Cu pads are successfully removed during the bumping process without additional treatment or equipment. The Si chip and substrate with daisy-chain pattern are fabricated to develop the fine pitch SoP process and evaluate the fine-pitch interconnection. The fabricated Si substrate has 6724 under bump metallization (UBM) with a $45{\mu}m$ diameter and $60{\mu}m$ pitch. The Si chip with Cu pillar bump is flip chip bonded with the SoP formed substrate using an underfill material with fluxing features. Using the fluxing underfill material is advantageous since it eliminates the flux cleaning process and capillary flow process of underfill. The optimized interconnection process has been validated by the electrical characterization of the daisy-chain pattern. This work is the first report on a successful operation of a fine-pitch SoP and micro bump interconnection using a screen printing process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.237-240
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• 2016

The improvement of irradiation intensity and irradiation uniformity is essential for large area and high power UVA light source application. In this study, large number of chips bonded by micro soldering technique were driven by low current, and current limiting diodes were configured to supply constant current to parallel circuits consisting of large number of series strings. The dimension of light source module circuit board was $350{\times}90mm^2$ and 16,650 numbers of 385 nm flip chip LEDs were used with a configuration of 90 parallel and 185 series strings. The space between LEDs in parallel and series strings were maintained at 1.9 mm and 1.0 mm distance, respectively. The size of the flip chip was $750{\times}750{\mu}m^2$ were used with contact pads of $260{\times}669{\mu}m^2$ size, and SAC (96.5 Sn/3.0 Ag/0.5 Cu) solder was used for flip chip bonding. The fabricated light source module with 7.5 m A supply current showed temperature rise of $66^{\circ}C$, whereas irradiation was measured to be $300mW/cm^2$. Inaddition, 0.23% variation of the constant current in each series string was demonstrated.