• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.37-42
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• 2001

The concerns of the toxicity and health hazard of lead in solders have demanded the research to find suitable lead-free solder alloys. It was discussed that effect of the intermetallic formation and structure on the reliability of solder joints. In this study, lead-free solder alloys with compositions of Sn/3.5Ag/0.75Cu, Sn/2.0Ag/0.5Cu/2.0Bi were applied to the 48 $\mu$BGA packages. Also, the lead-free solder alloys compared with eutectic Sn/37Pb solder using shear test under various aging temperature. Common $\mu$BGA with solder components was aged at $130^{\circ}C$, $150^{\circ}C$ and $170^{\circ}C$. And the each temperature applied to 300, 600 and 900 hours. The thickness of the intermetallics was measured for each condition and the activation energy for their growth was computed. The fracture surfaces were analyzed using SEM (Scanning Electron Microscope) with EDS (Energy Dispersive Spectroscopy). These results for reliability of lead-free interconnections are discussed.

• Proceedings of the KWS Conference
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• v.43
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• pp.31-32
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• 2004

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.307-313
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• 2005

Electromigration behavior in the Sn96.5Ag3.0Cu0.5 solder lines was investigated and compared Sn96.5Ag3.0Cu0.5 with eutectic SnPb. Measurements were made for relevant parameters for electromigration of the solder, such as drift velocity, threshold current density, activation energy, as well as the product of diffusivity and effective charge number (DZ$\ast$). The threshold current density were measured to be $2.38{\times}10^4A/cm^2$ at $140^{\circ}C$ and the value represented the maximum current density which the SnAgCu solder can carry without electromigration damage at the stressing temperatures. The electromigration energy was measured to 0.56 eV in the temperature range of $110-160^{\circ}C$. The measured products of diffusivity and the effective charge number, DZ$\ast$ were $3.12{\times}10^{-10} cm^2/s$ at $110^{\circ}C$, $4.66{\times}10^{-10} cm^2/s$ at $125^{\circ}C$, $8.76{\times}10^{-10} cm^2/s$ at $140^{\circ}C$, $2.14{\times}10^{-9}cm^2/s$ at $160^{\circ}C$ SnPb solder existed incubation stage, while SnAgCu did not have incubation stage. It was thought that the diffusion mechanism of SnAgCu was different from that of SnPb.

• Korean Journal of Metals and Materials
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• v.47 no.9
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• pp.580-585
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• 2009

The effects of shear speed and tip height on the high speed shear test of Sn-3.0wt.%Ag-0.5wt.%Cu ball joints were investigated. Solder balls of $450{\mu}m$ in diameter were reflowed at $245^{\circ}C$ on a FR4 PCB (Printed Circuit Board) in order to obtain a sample for the high-speed shear test. The UBM was comprised of Cu/Ni/Au, and the shear speed and tip height varied from 0.5 to 3.0 m/s, and from 10 to $135{\mu}m$, respectively. According to the experimental results, faster shear speed enhanced the shear strength of the solder joints, regardless of the tip height. The fraction of ductile (solder) fracture decreased when the shearing speed was raised from 0.5 to 3.0 m/s. With an increasing tip height from 10 to 50 and $135{\mu}m$, the fracture mode changed from pad lift to mixed (ductile and brittle) and ductile fracture, respectively, while the shearing energy also increased in the same order. The shear energy had a proportional relationship with the fraction of the solder fracture.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.35.2-35.2
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• 2009

최근 본 연구실에서 무연 솔더를 위한 새로운 Cu-Zn 합금 젖음층을 개발하였다. 전해도금을 통하여 Cu-Zn 합금층을 형성한 뒤 그 위에 Sn-4.0wt% Ag-0.5wt% Cu (SAC 405) 솔더를 리플로 솔더링을 통해 솔더접합부를 형성하였으며 계면에서 생성된 금속간 화합물의 형성 및 성장 거동을 연구하였다. SAC/Cu 시스템의 경우, $150^{\circ}C$에서 시효 처리를 실시하는 동안 솔더와 도금된 Cu 계면에서 $Cu_6Sn_5$ 상과 미세한 공공이 형성된 $Cu_3Sn$ 상이 발견되었다. 반면에 SAC/Cu-Zn 시스템에서는 계면에서 $Cu_6Sn_5$ 상만이 형성되었다. 또한 큰 판상형의 $Ag_3Sn$ 상이 SAC/Cu 시스템에 비해 현저하게 억제되었다. SAC/Cu-Zn 계면에서의 금속간 화합물의 성장 속도가 SAC/Cu 계면에서 형성된 금속간 화합물의 성장 속도보다 느리게 나타났다. Cu-Zn 젖음층의 Zn가 솔더와 Cu-Zn 층 사이에서 Cu와 Sn 원자의 상호 확산을 방해하기 때문이다. 본 연구에서는 Cu와 Cu-Zn 층을 이용한 솔더 접합부의 낙하 충격 신뢰성을 연구하였다. 낙하 충격 시험 시편은 두 개의 인쇄 회로 기판을 SAC 405 솔더볼을 이용하여 리플로를 통해 상호연결 하여 제조되었다. 이 때, 각각의 인쇄 회로 기판의 패드에는 Cu 층과 Cu-Zn층을 전해도금을 통하여 각각 $10{\mu}m$두께의 젖음층을 형성하였다. 낙하 시험 시편을 제조한 뒤, 시효 처리에 대한 낙하 저항 신뢰성의 특성을 연구하기 위해 250, 500 시간동안 시효처리를 한 후 각 조건에서 계면에 형성된 금속간 화합물의 성장 거동을 관찰하였으며, 낙하 충격 시험을 실시하였다. 낙하 시험은 daisy chain으로 연결된 시편의 저항이 100 Ohm 이상 측정되었을 때 중단되도록 하였다. Cu-Zn/SAC/Cu-Zn 시편의 경우 초기 리플로를 하였을 때 불량이 발생하는 평균 낙하 수는 350이며, Cu/SAC/Cu 시편의 평균 낙하수는 200 미만으로 나타났다. Cu/SAC/Cu 시편의 경우, 시효처리 시간이 증가함에 따라 평균 낙하수는 큰 폭으로 감소하였지만, Cu-Zn/SAC/Cu-Zn 시편은 불량이 발생하는 평균 낙하수의 감소폭이 보다 완만하게 나타났다. Cu 층에 Zn를 첨가함으로써 솔더와 젖음층 사이에서 형성된 금속간 화합물의 성장 및 미세 공공의 형성이 억제되었고, 솔더 접합부의 과냉을 감소시킴으로써 큰 판상형의 $Ag_3Sn$ 상의 형성을 억제함으로써 Cu-Zn/SAC/Cu-Zn 솔더 접합부에서 Cu/SAC/Cu 솔더 접합부보다 낙하 충격에 대한 저항성 및 신뢰성이 향상되었다. 이는 무연 솔더에 Zn를 첨가하여 낙하 충격 신뢰성을 향상시킨 것과 동일한 효과를 나타냈음을 확인하였다. 본 연구는 한국 과학 기술 재단의 전자패키지 재료 연구 센터(CEPM)와 지식 경제부의 부품 소재 기술 개발 사업의 지원을 받아 수행되었습니다.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.51-56
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• 2014

The reliability of solder joint is significantly affected by the property of surface finish. This paper reports on a study of high speed shear energy and failure mode for Sn-4.0wt%Ag-0.5wt%Cu (SAC405) solder joints with the time of Pd activation. The nodule size of electroless Ni-P deposit increased with increasing the time of Pd activation. The roughness (Ra) of electroless Ni-P deposit decreased with increasing the time of Pd activation. Then, with $HNO_3$ vapor, the quasi-brittle and brittle mode of SAC405 solder joint decreased with increasing the time of Pd activation. This results indicate that the increase in the Pd activation time for Electroless Ni/ Electroless Pd/ Immersion Au (ENEPIG) surface finish play a critical role for improving the robustness of SAC405 solder joint.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.611-616
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• 2010

This study investigated the characteristics of fracture behavior and mode on solder joints before and after thermal shock test for automotive application component using Sn-3.0Ag-0.5Cu solder, which has a outstanding property as lead-free solder. The shear strength was decreased with thermal cycle number, after 432 cycles of thermal shock test. In addition, fracture mode was verified to ductile, brittle fracture and base materials fracture such as different kind fractured mode using SEM and EDS. Before the thermal shock, the fractured mode was found to typical ductile fracture in solder layer. After thermal shock test, especially, Ag was found on fractured portion as roughest surface. Moreover, it occurred delamination between a PCB and a Cu land. Before thermal shock test, most of fractured mode in solder layer has dimples by ductile fracture. However, after thermal shock test, the fractured mode became a combination of ductile and brittle fracture, and it also could find that the fracture behavior varied including delamination between substrate and Cu land.

• ETRI Journal
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• v.33 no.4
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• pp.637-640
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• 2011

A novel bumping material, which is composed of a resin and Sn3Ag0.5Cu (SAC305) solder power, has been developed for the maskless solder-on-pad technology of the fine-pitch flip-chip bonding. The functions of the resin are carrying solder powder and deoxidizing the oxide layer on the solder power for the bumping on the pad on the substrate. At the same time, it was designed to have minimal chemical reactions within the resin so that the cleaning process after the bumping on the pad can be achieved. With this material, the solder bump array was successfully formed with pitch of 150 ${\mu}m$ in one direction.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.47-53
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• 2012

Bonding strength of Sn-3.0Ag-0.5Cu solder joint due to degradation characteristic of OSP surface finish was investigated, compared with SnPb finish. The thickness variation and degradation mechanism of organic solderability preservative(OSP) coating were also analyzed with the number of reflow process. To analyze the degradation degree of solder joint strength, FR-4 PCB coated with OSP and SnPb were experienced preheat treatment as a function of reflow number from 1st to 6th pass, respectively. After 2012 chip resistors were soldered with Sn-3.0Ag-0.5Cu on the pre-heated PCB, the shear strength of solder joints was measured. The thickness of OSP increased with increase of the number of reflow pass by thermal degradation during the reflow process. It was also observed that the preservation effect of OSP decreased due to OSP degradation which led Cu pad oxidation. The mean shear strength of solder joints formed on the Cu pads finished with OSP and SnPb were 58.1 N and 62.2 N, respectively, through the pre-heating of 6 times. Although OSP was degraded with reflow process, the feasibility of its application was proven.

• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.1041-1046
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• 2010

The reactions between a Sn-3.0Ag-0.5Cu solder alloy and electroless Ni/electroless Pd/immersion Au (ENEPIG) surface finishes with various Pd layer thicknesses (0, 0.05, 0.1, 0.2, $0.4{\mu}m$) were examined for the effect of the Pd layer on the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow at $235^{\circ}C$. The thin layer deposition of an electroless Pd (EP) between the electroless Ni ($7{\mu}m$) and immersion Au ($0.06{\mu}m$) plating on the Cu substrate significantly retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow. Its retarding effect increased with an increasing EP layer thickness. When the EP layer was thin (${\leq}0.1{\mu}m$), the retardation of the massive spalling was attributed to a reduced growth rate of the $(Cu,Ni)_6Sn_5$ layer and thus to a lowered consumption rate of Cu in the bulk solder during reflow. However, when the EP layer was thick (${\geq}0.2{\mu}m$), the initially dissolved Pd atoms in the molten solder resettled as $(Pd,Ni)Sn_4$ precipitates near the solder/$(Cu,Ni)_6Sn_5$ interface with an increasing reflow time. Since the Pd resettlement requires a continuous Ni supply across the $(Cu,Ni)_6Sn_5$ layer from the Ni(P) substrate, it suppressed the formation of $(Ni,Cu)_3Sn_4$ at the $(Cu,Ni)_6Sn_5/Ni(P)$ interface and retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer.