• Journal of Welding and Joining
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• v.20 no.2
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• pp.77-81
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• 2002

Many kinds of Pb-free solder have been investigated because of the environmental concerns. Sn-Ag-Cu system is well blown as most competitive Pb-free solder. However, since Sn-Ag-Cu system has relatively high melting point compared to Sn-Pb eutectic, it may a limitation, the some application. In this study, Bi and In contained solder of $Sn_3Ag_8Bi_5In$ which has relatively lower melting point, $188~204^{\circ}C$, was investigated. $Sn_3Ag_8Bi_5In$ solder ball of $500\mu\textrm{m}$ diameter was set on the Ni/Cu/Cr-UBM and reflow soldered in the range of $220~240^{\circ}C$ for 5~15s. The maximum shear strength of the solder ball was around 170mN by reflowing at $240^{\circ}C$ for 10s. Intermetallic compound formed on the UBM of Si-wafer was analysed by SEM(scanning electron microscope) and XRD(X-ray diffractometer).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.5
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• pp.332-337
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• 2015

We have studied the effects of Ag on the characteristics of $Sn_{60}Pb_{40}Ag_x$ (wt%) solder for photovoltaic ribbon. Ag atoms in the solder formed an alloy phase of $Ag_3Sn$ after reacting with some part of Sn atoms, while they did not react with Pb atoms, but decreased the mean size of Pb solid phase. The enhancement of peel strength between solar cell and ribbon is an important part in the developments of long-lifespan solar module. The peel strength of the solder ribbon of $Sn_{60}Pb_{40}$ (wt%) was $169N/mm^2$, and it was largely enhanced by adding a small amount of Ag atoms. The maximum peel strength was $295N/mm^2$ in the solder ribbon of $Sn_{60}Pb_{40}Ag_2$ (wt%). This result is caused by the high binding energy of 162.9 kJ/mol between Ag atoms in the solder and Ag atoms in Ag sheet.

• Journal of Welding and Joining
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• v.23 no.5
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• pp.49-54
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• 2005

The effective charge number and the critical current density of electromigration in eutetic SnPb and Pb Free $(SnAg_{3.8}Cu_{0.7)$ flip chip solder bumps are studied. The effective charge number of electromigration in eutectic SnPb solder is obtained as 34 and the critical current density is $j=0.169{\times}({\delta}_{\sigma}/{\delta}_x})\;A/cm^2,\;where\;({\delta}_{\sigma}/{\delta}_x})$ is the electromigration-induced compressive stress gradient along the length of the line. While the effect of electromigration in Pb free solder is much smaller than that in eutectic SnPb, the product of diffusivity and effective charge number $DZ^{\ast}$ has been assumed as $6.62{\times}10^{-11}$. The critical length for electromigration are also discussed.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.13-19
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• 2000

Shear strengths of BGA solder joints on Cu pads were studied for Cu-containing Sn (0, 1.5, and 2.5 wt.% Cu) and Sn-40Pb (0 and 0.5wt.% Cu) solders, with emphasis on the roles of the Cu-Sn intermetallic layer thickness and the roughness of the interface between the intermetalic layer and solder. The shear strength test was performed for as-soldered solder joints with various soldering reaction times up to 4 min. The addition of Cu to the pure Sn solder results in an enhanced growth of the intermetallic layer whereas the effect of Cu addition to the Sn-40Pb solder is primarily on the reduction of the roughness of the intermetallic/solder interface. The critical thickness of the intermetallic layer for a maximum shear strength depends on the solder materials, which was measured to be ~ 2.3 $\mu\textrm{m}$ for Sn-Cu solders and ~ 1.2 $\mu\textrm{m}$ for Sn-Pb-Cu solders. The shear strength at the critical intermetallic layer thickness seems to increase as the intermetallic/solder interface becomes rougher. This is in accordance with the observation that the sheared fracture occurred initially within the solder tends to shift towards the intermetallic/solder interface as the intermetallic layer grows above the critical thickness.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.2
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• pp.39-43
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• 2002

The eutectic solder Sn-37Pb and the lead free solder alloys with the compositions of Sn-0.7Cu, Sn-3.5Ag, Sn-3.5Ag-0.75Cu, Sn-2.0Ag-0.7Cu-3.0Bi were applied to the 48 BGA packages, and then it was discussed for the shear strength at the solder joints as the hardness and the composition of the small solder ball. As a result of experiments, the high degree of hardness with the displacement of 0.043 mm was obtained in Sn-2.0Ag-0.7Cu-3.0Bi. The shear strength of the lead free solder was higher than that of Sn-37Pb solder, and it can be obtained the maximum value of about 52% in Sn-2.0Ag-0.7Cu-3.0Bi.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.4
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• pp.47-52
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• 2001

Pb-free wave soldering process of AC Adapter was implemented by six sigma method using Sn-Cu-Ni type solder. The solder joint appearance, microstructural change, a lift-off phenomenon and reliability were evaluated through thermal shuck test. $(Cu,Ni)_6/Sn_5$-type intermetallic compound of which thickness is about 5 $\mu\textrm{m}$ was found at solder joint between Sn-Cu-Ni solder and copper land. After applying the thermal shock test of as-soldered product up to 750 cycles, no crack was fecund at the solder joint. The newly developed product was superior to conventional one in terms of productivity and reliability.

• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.217-220
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• 2014

We studied the plating properties of Sn-Pb solder according to the shape of the Cu wire's cross-section for photovoltaic ribbon. The thickness of the Sn-Pb layer largely decreased to 29% on a curved Cu surface, compared to a flat Cu surface. This phenomenon is caused by the geometrical decrease in the contact angle of the liquid Sn-Pb solder and an increase in the surface energy of the solid/vapor on the curved Cu surface. We suggest a new ribbon's design where the Cu wire's cross-section is a semi-ellipse. These semi-ellipse ribbons can decrease the use of Sn-Pb solder to 64% and increase the photovoltaic efficiency, by reducing the contact area between the ribbon and cell, to 84%. We also see an improvement of reflectivity in the curved surface.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.2 s.31
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• pp.53-58
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• 2004

To facilitate the observation of the electromigration of 63Sn-37Pb eutectic solder, strip-type samples were fabricated by solder evaporation. The electromigration test for the 63Sn-37Pb solder strip was conducted at temperatures of $80{\sim}150^{\circ}C$ and the current densities of $1{\times}10^4{\sim}1{\times}10^5\;A/cm^2$. With increasing temperature and the current density, mean-time-to-failure(MTTF) decreased due to the formation of hillock and void in the solder strip. The activation energy for the electromigration in the 63Sn-37Pb solder strip was analyzed as $0.16{\sim}0.5\;eV$ using Black's equation.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.799-806
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• 2000

Cu$_{6}$Sn$_{5}$-dispersed 63Sn-37Pb solder bumps of 760$\mu\textrm{m}$ size were fabricated on Au(0.5$\mu\textrm{m}$)/Ni(5$\mu\textrm{m}$)/Cu(27$\pm$20$\mu\textrm{m}$) BGA substrates by screen printing process, and their shear strength were characterized with variations of dwell time at reflow peak temperature and aging time at 15$0^{\circ}C$ . With dwell time of 30 seconds at reflow peak temperature, the solder bumps with Cu$_{6}$Sn$_{5}$ dispersion exhibited higher shear strength than the value of the 63Sn-37Pb solder bump. With increasing the dwell time longer than 60 seconds, however the shear strength of the Cu$_{6}$Sn$_{5}$-dispersed solder bumps became lower than that the 63Sn-37Pb solder bumps. The failure surface of the solder bumps could be divided into two legions of slow crack propagation and critical crack propagation. The shear strength of the solder bumps was inversely proportional to the slow crack propagation length, regardless of the dwell time at peak temperature, aging time at 150 $^{\circ}C$ and the volume fraction of Cu$_{6}$Sn$_{5}$ dispersion.> 5/ dispersion.

• Journal of Welding and Joining
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• v.18 no.3
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• pp.89-96
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• 2000

As solder becomes small and fine, the reliability and solderability of solder joint are the critical issue in present electronic packaging industry. Besides the use of lead(Pb) containing solders for the interconnections of microelectronic subsystem assembly and packaging has enviromental problem. In this study, using Sn/Pb and Sn/Ag eutectic solder paste, in order to obtain decrease of solder joint strength with increasing aging time, initial solder joint strength and aging strength after 1000 hour aging at $100^{\circ}C$ were measured by peel test. And in order to obtain the growth of intermetallic compound(IMC) layer thickness, IMC layer thickness was measured by scanning electron microscope(SEM). As a result, solder joint strength was decreased with increasing aging time. The mean IMC layer thickness was increased linearly with the square root of aging time. The diffusion coefficient(D) of IMC layer was found to $1.29{\times}10^{-13}{\;}cm^2/s$ at using Sn/Pb solder paste, 7.56{\times}10^{-14}{\textrm}{cm}^2/s$ at using Sn/Ag solder paste.