• Title/Summary/Keyword: Sn-Bi solder

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A Study on the Soldering Characteristics of Sn-Ag-Bi-In Ball in BGA (Sn-Ag-Bi-In계 BGA볼의 솔더링 특성 연구)

  • 문준권;김문일;정재필
    • Journal of Welding and Joining
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    • v.20 no.4
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    • pp.505-509
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    • 2002
  • Pb is considered to be eliminated from solder, due to its toxicity. However, melting temperatures of most Pb-free solders are known higher than that of Sn37Pb. Therefore, there is a difficulty to apply Pb-free solders to electronic industry. Since Sn3Ag8Bi5In has relatively lower melting range as $188~200^{\circ}C$, on this study. Wettability and soldering characteristics of Sn3Ag8Bi5In solder in BGA were investigated to solve for what kind of problem. Zero cross time, wetting time, and equilibrium force of Sn3Ag8Bi5In solder for Cu and plated Cu such as Sn, Ni, and Au/Ni-plated on Cu were estimated. Plated Sn on Cu showed best wettability for zero cross time, wetting time and equilibrium farce. Shear strength of the reflowed joint with Sn3Ag8Bi5In ball in BGA was investigated. Diameter of the ball was 0.5mm, UBM(under bump metallurgy) was $Au(0.5\mu\textrm{m})Ni(5\mu\textrm{m})/Cu(18\mu\textrm{m})$ and flux was RMA type. For the reflow soldering, the peak reflow temperature was changed in the range of $220~250^{\circ}C$, and conveyor speed was 0.6m/min.. The shear strength of Sn3Ag8Bi5In ball showed similar level as those of Sn37Pb. The soldered balls are aged at $110^{\circ}C$ for 36days and their shear strengths were evaluated. The shear strength of Sn3Ag8Bi5In ball was increased from 480gf to 580gf by aging for 5 days.

Interfacial Reaction between 42Sn-58 Bi Solder and Electroless Ni-P/Immersion Au UBM during Aging (시효 처리에 의한 42Sn-58Bi 솔더와 무전해 Ni-P/치환 Au UBM 간의 계면 반응)

  • Cho Moon Gi;Lee Hyuck Mo;Booh Seong Woon;Kim Tae-Gyu
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.2 s.35
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    • pp.95-103
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    • 2005
  • The interfacial reaction between 42Sn-58Bi solder (in wt.$\%$ unless specified otherwise) and electroless Ni-P/immersion Au has been investigated before and after thermal aging, with a focus on formation and growth of an intermetallic compound (IMC) layer, consumption of under bump metallurgy (UBM), and bump shear strength. The immersion Au layer with thicknesses of 0 (bare Ni), 0.1, and $1{\mu}m$ was plated on the $5{\mu}m$ thick electroless Ni-P ($14{\~}15 at.\%$P) layer. Then, the 42Sn-58Bi solder balls were fabricated on three different UBM structures by screen-printing and pre-reflow. The $Ni_3Sn_4$ layer (IMC1) was formed at the joint interface after pre-reflow for all the three UBM structures. On aging at $125^{\circ}C$, a quaternary phase (IMC2) was observed above the $Ni_3Sn_4$ layer in the Au-containing UBM structures, which was identified as $Sn_{77}Ni{15}Bi_6Au_2$ (in at.$\%$). The thick $Sn_{77}Ni{15}Bi_6Au_2$ layer deteriorated the integrity of the solder joint and the shear strength of the solder bump was decreased by about $40\%$ compared with non-aged joints.

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Study on Joint of Micro Solder Bump for Application of Flexible Electronics (플렉시블 전자기기 응용을 위한 미세 솔더 범프 접합부에 관한 연구)

  • Ko, Yong-Ho;Kim, Min-Su;Kim, Taek-Soo;Bang, Jung-Hwan;Lee, Chang-Woo
    • Journal of Welding and Joining
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    • v.31 no.3
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    • pp.4-10
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    • 2013
  • In electronic industry, the trend of future electronics will be flexible, bendable, wearable electronics. Until now, there is few study on bonding technology and reliability of bonding joint between chip with micro solder bump and flexible substrate. In this study, we investigated joint properties of Si chip with eutectic Sn-58Bi solder bump on Cu pillar bump bonded on flexible substrate finished with ENIG by flip chip process. After flip chip bonding, we observed microstructure of bump joint by SEM and then evaluated properties of bump joint by die shear test, thermal shock test, and bending test. After thermal shock test, we observed that crack initiated between $Cu_6Sn_5IMC$ and Sn-Bi solder and then propagated within Sn-Bi solder and/or interface between IMC and solder. On the other hands, We observed that fracture propated at interface between Ni3Sn4 IMC and solder and/or in solder matrix after bending test.

A Study on Wetting, Interfacial Reaction and Mechanical Properties between Sn-Bi-Ag System Solders and Cu Substrate (Sn-Bi-Ag계 땜납과 Cu기판과의 젖음성, 계면 반응 및 기계적 성질에 관한 연구)

  • Seo, Youn-Jong;Lee, Kyung-Ku;Lee, Doh-Jae
    • Journal of Korea Foundry Society
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    • v.17 no.3
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    • pp.245-251
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    • 1997
  • Solderability, interfacial reaction and mechanical properties of joint between Sn-Bi-Ag base solder and Cu-substrate were studied. Solders were subjected to aging treatments to see the change of mechanical properties for up to 30 days at $100^{\circ}C$, and then also examined the changes of microstructure and morphology of interfacial compound. Sn-Bi-Ag base solder showed about double tensile strength comparing to Pb-Sn eutectic solder. Addition of 0.7wt%Al in the Sn-Bi-Ag alloy increase spread area on Cu substrate under R-flux and helps to reduce the growth of intermetallic compound during heat-treatment. According to the aging experiments of Cu/solder joint, interfacial intermetallic compound layer was exhibited a parabolic growth to aging time. The result of EDS, it is supposed that the soldered interfacial zone was composed of $Cu_6Sn_5$.

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The evolution of reliability of Sn-Bi binary solder paste (Sn-Bi 공정 조성 솔더 페이스트의 특성평가)

  • Park, Bu-Geun;Park, Jae-Hyeon
    • Proceedings of the KWS Conference
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    • 2007.11a
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    • pp.168-170
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    • 2007
  • Sn-Bi eutectic solder alloy have is good wetting and physical properties. The results of solder paste properties test, melting point is about $139^{\circ}C$ and spread test is represent spread properties of $7{\sim}16%$. The results of shear strength after as reflowed, thermal shock test, high temperature storage test of 500hr and 1000hr at $100^{\circ}C$. The shear strength value range is from 6000 to 11000gf, pull strength value range is from 2200 to 3300gf.

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A Study on Interfacial Reaction and Mechanical Properties of 43Sn-57Bi-X solder and Cu Substrate (Sn-Bi-X계 땜납과 Cu 기판과의 계면반응 및 기계적 특성에 관한 연구)

  • Seo, Yun-Jong;Lee, Gyeong-Gu;Lee, Do-Jae
    • Korean Journal of Materials Research
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    • v.8 no.9
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    • pp.807-812
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    • 1998
  • Interfacial reaction and mechanical properties between Sn-Bi-X ternary alloys(X : 2Cu. 2Sb 5In) and Cu-substrate were studied. Cu/solder joints were subjected to aging treatments for up to 60days to see interfacial reaction at $100^{\circ}C$ and then were examined changes of microstructure and interfacial compound by optical microscopy, SEM and EDS. Cu/solder joints were aged to 30days and then loaded to failure at cross head speed of 0.3mm $\textrm{min}^{-1}$ to measure strength and elongation. According to the result of EDS, it is supposed that the soldered interfacial zone was composed of $\textrm{Cu}_{3}\textrm{Sn}$ and $\textrm{Cu}_{6}\textrm{Sn}_{5}$. According to the tensile test of Cu/solder joint, joint strength was decreased by aging treatment. Fractographs of Cu/Sn-Bi solder detailed the effect of aging on fracture behavior. When intermetallic was thin, the fracture occurred through the solder. But as the interfacial intermetallic is thickened, the fracture propagated along the intermetallic/solder interface.

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Chip Interconnection Process for Smart Fabrics Using Flip-chip Bonding of SnBi Solder (SnBi 저온솔더의 플립칩 본딩을 이용한 스마트 의류용 칩 접속공정)

  • Choi, J.Y.;Park, D.H.;Oh, T.S.
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.3
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    • pp.71-76
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    • 2012
  • A chip interconnection technology for smart fabrics was investigated by using flip-chip bonding of SnBi low-temperature solder. A fabric substrate with a Cu leadframe could be successfully fabricated with transferring a Cu leadframe from a carrier film to a fabric by hot-pressing at $130^{\circ}C$. A chip specimen with SnBi solder bumps was formed by screen printing of SnBi solder paste and was connected to the Cu leadframe of the fabric substrate by flip-chip bonding at $180^{\circ}C$ for 60 sec. The average contact resistance of the SnBi flip-chip joint of the smart fabric was measured as $9m{\Omega}$.