• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.57-64
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• 2007

New Chip-on-glass technology to attach an Si chip directly on the glass substrate of LCD panel was studied with local heating method of the Si chip by using thin film heater fabricated on the Si chip. Square-shaped Cu thin film heater with the width of $150\;{\mu}m$, thickness of $0.8\;{\mu}m$, and total length of 12.15 mm was sputter-deposited on the $5\;mm{\times}5\;mm$ Si chip. With applying current of 0.9A for 60 sec to the Cu thin film heater, COG bonding of a Si chip to a glass substrate was successfully accomplished with reflowing the Sn-3.5Ag solder bumps on the Si chip.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.83-89
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• 2014

Solder paste plays a crucial role as the widely used joining material in surface mount technology (SMT). The understanding of its behaviour and properties is essential to ensure the proper functioning of the electronic assemblies. The composition of the solder paste is known to be directly related to its rheological behaviour. This paper provides a brief overview of the solder paste behaviour of four different solder paste formulations, stencil printing processes, and techniques to characterize solder paste behaviour adequately. The solder pastes are based on the Sn-3.0Ag-0.5Cu alloy, are different in their particle size, metal content and flux system. The solder pastes are characterized in terms of solder particle size and shape as well as the rheological characterizations such as oscillatory sweep tests, viscosity, and creep recovery behaviour of pastes.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.28.1-28.1
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• 2007

• Journal of the Microelectronics and Packaging Society
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• v.9 no.4
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• pp.1-9
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• 2002

The metallurgical reaction properties between the pad consisted of 0.5 $\mu\textrm{m}$Au/5 $\mu\textrm{m}$Ni/Cu layers on a conventional ball grid array (BGA) substrate and In-15 (wt.%)Pb-5Ag solder ball were characterized during the reflow process and solid aging. During the reflow process of 1 to 5 minutes, it was observed that thin $AuIn_2$ or Ni-In intermetallic layer was formed at the interface of solder/pad. The dissolution rate of the Au layer into the molten solder was about $2\times 10^{-3}$ $\mu\textrm{m}$/sec which is remarkably low in comparison with a eutectic Sn-37Pb solder. After solid aging treatment for 500 hrs at $130^{\circ}C$, the thickness of $Ni_{28}In_{72}$ intermetallic layer was increased to about 3 $\mu\textrm{m}$ in all the conditions nevertheless the initial reflow time was different. These result show that In atoms in the solder alloy were diffused through the $AuIn_2$ phase to react with underlaying Ni layer during solid aging treatment. From the microstructural observation and shear tests, the reaction properties between In-15Pb-5Ag alloy and Au/Ni surface finish were analyzed not to trigger Au-embrittlement in the solder joints unlike Sn-37Pb composition.

• Advances in materials Research
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• v.1 no.1
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• pp.83-92
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• 2012

The effect of under-bump-metallization (UBM) on electromigration was investigated at temperatures ranging from $135^{\circ}C$ to $165^{\circ}C$. The UBM structures were examined: 5-${\mu}m$-Cu/3-${\mu}m$-Ni and $5{\mu}m$ Cu. Experimental results show that the solder joint with the Cu/Ni UBM has a longer electromigration lifetime than the solder joint with the Cu UBM. Three important parameters were analyzed to explain the difference in failure time, including maximum current density, hot-spot temperature, and electromigration activation energy. The simulation and experimental results illustrate that the addition 3-${\mu}m$-Ni layer is able to reduce the maximum current density and hot-spot temperature in solder, resulting in a longer electromigration lifetime. In addition, the Ni layer changes the electromigration failure mode. With the $5{\mu}m$ Cu UBM, dissolution of Cu layer and formation of $Cu_6Sn_5$ intermetallic compounds are responsible for the electromigration failure in the joint. Yet, the failure mode changes to void formation in the interface of $Ni_3Sn_4$ and the solder for the joint with the Cu/Ni UBM. The measured activation energy is 0.85 eV and 1.06 eV for the joint with the Cu/Ni and the Cu UBM, respectively.

• Journal of the Korean Society of Safety
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• v.30 no.6
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• pp.7-11
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• 2015

The present study investigates the impact shear strength of thermal aged Sn-3Ag-0.5Cu lead-free solder joints at impact speeds ranging from 0.5 m/s to 2.5 m/s. The specimens were thermal aged for 24, 100, 250 and 1000 hours at $100^{\circ}C$. The experimental results demonstrate that the shear strength of the solder joint decreases with an increase in the load speed and aging time. The shear strength of the solder joint aged averagely decreased by 43% with an increase in the strain rate. For the as-reflowed specimens, the mode II stress intensity factor ($K_{II}$) of interfacial IMC between Sn-3.0Ag-0.5Cu and a copper substrate also was found to decrease from $1.63MPa.m^{0.5}$ to $0.97MPa.m^{0.5}$ in the speed range tested here. The degradations in the shear strength and fracture toughness of the aged solder joints are mainly caused by the growth of IMC layers at the solder/substrate interface.

• Proceedings of the KWS Conference
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• 2010.05a
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• pp.81-81
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• 2010

전자 패키징은 미세화, 경량화, 저가화를 지향하고 신뢰성의 향상을 위해 발전해 왔다. 이러한 경향은 전자부품 자체의 성능 향상 뿐 아니라 전자부품을 장착, 고정할 수 있게 하는 인쇄회로 기판(PCB : Printed Circuit Board)의 성능에 많은 관심을 가지게 되었다. 전기적 신호의 손실을 줄이기 위해 전기, 전자 산업체에서는 가볍고 굴곡성이 우수한 연성인쇄회로기판(FPCB : Flexible PCB)과 가격이 싸고 신뢰성이 입증된 경성인쇄회로기판(RPCB : Rigid PCB)이 그 대상이다. 본 논문에서는 이 PCB중에서도 RPCB와 FPCB간의 열압착 방식으로 접합 시 전극간의 접합 양상을 보았다. 이 열압착 방식은 기존에 PCB를 접합하는데 사용하고 있는 connector를 이용한 체결법을 대체하는 기술로써 솔더를 중간층(interlayer)로 이용하여 열과 압력으로 접합하는 방식이다. 이 방식을 connector를 사용하는 방식에 비해 그 부피가 작고 I/O개수에 크게 영향 받지 않으며 자동화 공정이 쉬운 장점을 가지고 있다. 접합의 대상 중 RPCB의 경우는 무전해 니켈 금도금(ENIG : Electroless Nickle Immersion Gold)로 제작하였으며 FPCB의 경우는 ENIG와 유기보호피막(OSP : Organic solderability preservation) 처리하였다. 실험에 사용한 PCB는 $300\;{\mu}m$ pitch의 미세피치이며 솔더의 조성은 Sn-3.0Ag-0.5Cu (in wt%)과 Sn-3.0Ag (in wt%)를 사용하였다. 접합 온도와 접합 시간 그리고 접합 압력에 따라 최적의 접합 조건을 도출하였다. 접합 강도는 $90^{\circ}$ Peel Test를 통해서 측정하였으며 접합면 및 파괴면은 SEM과 EDS를 통하여 분석하였다.

• ETRI Journal
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• v.33 no.4
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• pp.637-640
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• 2011

A novel bumping material, which is composed of a resin and Sn3Ag0.5Cu (SAC305) solder power, has been developed for the maskless solder-on-pad technology of the fine-pitch flip-chip bonding. The functions of the resin are carrying solder powder and deoxidizing the oxide layer on the solder power for the bumping on the pad on the substrate. At the same time, it was designed to have minimal chemical reactions within the resin so that the cleaning process after the bumping on the pad can be achieved. With this material, the solder bump array was successfully formed with pitch of 150 ${\mu}m$ in one direction.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.1
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• pp.77-85
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• 2004

To evaluate the effect of plasma cleaning on the soldering reliability the plasma cleaning using Ar-10vol%$H_2$ gas was applied on a UBM(Under Bump Metallization). The UBM consisted of Au/ Cu/ Ni/ Al layers which were deposited on a Si-wafer with 20 nm/ 4 $\mu\textrm{m}$/ 4 $\mu\textrm{m}$/ 0.4 $\mu\textrm{m}$ thickness respectively. Sn-3.5%Ag, Sn-3.5%Ag-0.7%Cu and Sn-37%Pb solder balls sized of 500 $\mu\textrm{m}$ in diameter were used. Solder balls on the UBM were plasma reflowed under Ar-10%$H_2$ plasma (with or without plasma cleaning). They were compared with air reflowed solder balls with flux. The spreading ratios of plasma reflowed solder with plasma cleaning was 20-40% higher than that of plasma reflowed solder without plasma cleaning. The shear strength of plasma reflowed solder with plasma cleaning was about 58-65MPa. It showed 60-80% higher than that of plasma reflowed solder without plasma cleaning and 15-35% higher than that of air reflowed solder. Thus it was believed that plasma cleaning for the UBM using Ar-10vol%$H_2$ gas was considerably effective for the improvement of the strength of solder ball.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.25-29
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• 2014

Plasma organic thin film for PCB surface finish is a potential replacement of the conventional PCB finishes because of environment-friendly process, high corrosion-resistance and long shelf life over 1 year. In this study, solder joint properties of the plasma organic surface finish were estimated and compared with OSP surface finish. The plasma surface finish was deposited by chemical vapor deposition from fluorine-based precursors. The thickness of the plasma organic coating was 20 nm. Sn-3.0Ag-0.5Cu (SAC305) solder was used as solder joint materials. From a salt spray test, the plasma organic coating had higher corrosion resistance than the OSP surface finish. The spreadability of SAC305 on plasma organic coating was higher than that on OSP surface finish. SEM and TEM micrographs showed that the interfacial microstructure of the plasma surface finish sample were similar to that of the OSP sample. Solder joint strength of the plasma finish sample was also similar to that of the OSP finished sample.