• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.114-115
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• 2007

In this study, low temperature sintering property of the $0.6TiTe_3O_8-0.4MgTiO_3$ ceramics with sintering adds were investigated for LTCC application which enable to cofiring with Ag electrode. $TiTe_3O_8$ mixed with $MgTiO_3$ to improve the temperature property. In the X-ray diffraction patterns, the columbite structure of $TiTe_3O_3$ phase and ilmenite structure of $MgTiO_3$ phase were coexisted in all specimens. In the case of $H_3BO_3$ addition, the bulk density and dielectric constant were decreased but quality factor was increased with amount of $H_3BO_3$ additions. The TCRF of the $0.6TiTe_3O_8-0.4MgTiO_3+xwt%H_3BO_3$ ceramics were moved to positive direction. In another case, SnO addition, the bulk density and dielectric constant were increased but Quality factor was decreased with amount of SnO additions. The TCRF of the $0.6TiTe_3O_8-0.4MgTiO_3$+ywt%SnO ceramics were shifted to negative direction. The dielectric constant, quality factor and TCRF of the $0.6TiTe_3O_8-0.4MgTiO_3$ ceramics with $2wt%H_3BO_3$ and 2.5wt%SnO sintered at $830^{\circ}C$ for 1h, were 28.5, 39,570GHz, $+9.34ppm/^{\circ}C$ and 29.86, 35,80000z, $-0.58ppm/^{\circ}C$, respectively.

• Journal of the Korean institute of surface engineering
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• v.36 no.5
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• pp.373-378
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• 2003

With increasing environmental concerns, application of lead-free solder and fluxless soldering process have been taken attention from the electronic packaging industry. Plasma treatment is one of the soldering methods for the fluxless soldering, and it can prevent environmental pollution cased by flux. On this study fluxless soldering process under $Ar-H_2$plasma using lead free solders such as Sn-3.5 wt%Ag, Sn-3.5 wt%Ag-0.7 wt%Cu and Sn-37%Pb for a reference was investigated. As the plasma reflow has higher soldering temperature than normal air reflow, the effects of UBM(Under Bump Metallization) thickness on the interfacial reaction and bonding strength can be critical. Experimental results showed in case of the thin UBM, Au(20 nm)/Cu(0.3 $\mu\textrm{m}$)/Ni(0.4 $\mu\textrm{m}$)/Al(0.4 $\mu\textrm{m}$), shear strength of the soldered joint was relatively low as 19-27㎫, and it's caused by the crack observed along the bonded interface. The crack was believed to be produced by the exhaustion of the thin UBM-layer due to the excessive reaction with solder under plasma. However, in case of thick UBM, Au(20 nm)/Cu(4 $\mu\textrm{m}$)/Ni(4 $\mu\textrm{m}$)/Al(0.4 $\mu\textrm{m}$), the bonded interface was sound without any crack and shear strength gives 32∼42㎫. Thus, by increasing UBM thickness in this study the shear strength can be improved to 50∼70%. Fluxed reflow soldering under hot air was also carried out for a reference, and the shear strength was 48∼52㎫. Consequently the fluxless soldering with plasma showed around 65∼80% as those of fluxed air reflow, and the possibility of the $Ar-H_2$ plasma reflow was evaluated.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.80-80
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• 2009

패키징 구조의 발전이 점차 중요한 문제로 대두되어, 칩의 집적 기술의 발전에 따라 실장기술에서도 고속화, 소형화, 미세피치화, 고정밀화, 고밀도화가 요구되고있다. 최근 선진국을 중심으로 전자 전기기기 및 부품의 실장기술에서도 환경 친화적인 기술을 요구함에 따라, 저에너지 공정 및 무연 실장 기술에 대한 연구가 활발하게 진행되고 있다. 기존의 SOP(Small Out-line Package), QFP(Quad Flat Package) 등은 소형화, 다핀화, 고속화, 실장성에 한계가 있기 때문에, SMT(Surface Mount Technology) 형식으로 된 BGA(Ball Grid Array)가 휴대형 전화를 비롯한 기타 전자 부품 실장에 널리 사용되고 있다. BGA ball shear 법은 BGA 모듈의 생산 및 취급 중에 발생할지도 모르는 기판에 수평으로 작용하는 기계적인 전단력에 BGA solder ball이 견딜 수 있는 정도를 측정하기 위해 사용되는 시험법이다. 전단 시험에 의한 전단 강도의 측정 외에 전기전도도 측정, 파면 관찰, 이동거리(displacement), 유한요소 해석법 등을 병행하여 시험법의 신뢰성 향상에 대한 연구가 이루어지고 있다. 본 실험에서는 지름이 $500{\mu}m$인 Sn-3.5Ag 솔더볼을 이용하여 세라믹 기판을 접합하여 BGA 패키지를 완성하였다. 상부 기판에 솔더볼을 정렬시켜 리플로우 방법으로 접합 한 후 솔더볼이 접합된 상부 기판과 하부 기판을 접합 하여 시편을 제작하였다. 접합된 시편들은 $150^{\circ}C$에서 0~800시간 열처리를 실시하였고, 열처리를 하면서 각각 $3{\times}10^2A/cm^2,\;5{\times}10^3A/cm^2$의 전류를 인가하였다. 시편들을 전단 시험기를 이용하여 솔더볼의 기계적 특성 평가를 하였으며, 계면 반응을 관찰하였다.

• The Korean Journal of Mycology
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• v.14 no.3
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• pp.209-214
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• 1986

In order to study the trehalase (EC 3. 2. 1. 28) from mushroom, Agaricus bisporus Lange Sing., the crude trehalase preparation was separated by fractionation of mushroom extracts with ammonium sulfate between 0.4 and 1.0 saturation, and its properties were examined. Mushroom trehalase showed optimum pH 6.0, and optimum temperature $40^{\circ}C$. The enzyme was stable at pH range between 5.0 and 7.0, and at temperature below $50^{\circ}C$. The activities of crude trehalase had proportional relations with enzyme concentrations below 490.2 mg % of protein and with substrate concentration below $2.6{\times}10^{-3}M$, showing a Km value of 0.760 mM. The enzyme was inhibited by some metal ions such as $Sn^{2+}$, $Ca^{2+}$, $Hg^{2+}$, $Cd^{2+}$, $Cu^{2+}$, $Mn^{2+}$, $Zn^{2+}$, $Al^{3+}$, and $Fe^{3+}$, while $Ag^{+}$, $Ba^{2+}$, and $Mg^{2+}$ demonstrated remarkable increasing effects on the enzyme activity.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.1
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• pp.117-123
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• 2015

The need for drop simulations for board-leveled flip chips in micro-system packaging has been increasing. There have been many studies on flip chips with various solder ball compositions. However, studies on flip chips with Sn-1.0Ag-0.5Cu and Sn-3.0Ag-0.5Cu have rarely been attempted because of the unknown material properties. According to recent studies, drop simulations with these solder ball compositions have proven feasible. In this study, predictions of the impact lifetime by drop simulations are performed considering Cu and Cu/Ni UBMs using LS-DYNA to alter the design parameters of the flip chips, such as thickness of the flip chip and size of the solder ball. It was found that a smaller chip thickness, larger solder ball diameter, and using the Cu/Ni UBM can improve the drop lifetime of solder balls.

• International Journal of Korean Welding Society
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• v.5 no.1
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• pp.15-28
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• 2005

The ball shear test was investigated in terms of the effects of test parameters, i.e., shear height and shear speed, with an experimental and non-linear finite element analysis for evaluating the solder joint integrity of area array packages. Two representative Pb-free solder compositions were examined in this work: Sn-3.5Ag-0.75Cu and In-48Sn. The substrate was a common SMD type with solder bond pad openings of 460 $\mu$m in diameter. The microstructural investigations were carried out using SEM, and the IMCs were identified with EDS. Shear tests were conducted with the two varying test parameters. It could be observed that increasing shear height, at fixed shear speed, has the effect of decreasing shear force for both Sn-3.5Ag-0.75Cu and In-48Sn solder joints, while the shear force increased with increasing shear speed at fixed shear height. Too high shear height could cause some undesirable effects on the test results such as unexpected high standard deviation values or shear tip sliding from the solder ball. The low shear height conditions were favorable for screening the type of brittle interfacial fractures or the degraded layers in the interfaces. The shear speed conditions were discussed with the stress analyses of the solder ball, and we cannot find any conspicuous finding which is related to optimum shear speed from the stress analyses.

• Journal of Conservation Science
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• v.17 s.17
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• pp.33-38
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• 2005

One piece of Haedong-Tongue(해동통보) minted at 1,102 A.D. was excavated from No.20 wooden coffin, Sinbong-dong, Cheongju. It was analyzed by micro-XRF and ICP and determined the concentrations of ten elements such as Cu, Pb, Sn, Zn, Fe, Mn, Sb, Co, As, Ag and Ni. The measurement of lead isotope ratios was also carried out in order to predict the provenance of raw materials used for minting of Haedong-Tongbo. It was found that Haedong-Tongbo was minted with three compositions of $Cu\;75.5\%,\;Pb\;13.3\%\;and\;Sn\;6.0\%$, which were different from the typical composition of Chosen-Tongbo and Sangpyung-Tongbo used in Chosen dynasty. Lead isotope ratios of Haedong-Tongbo showed that the provenance of lead used for minting of it suggested the possibility to be originated from Southern part of Korea.

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.206-208
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• 2006

The reliability of BGA (ball grid array) package with OSP (organic surface preservative) surface finish under thermal cycle was investigated by using SEM (scanning electron microscopy), EDS(energy dispersive spectroscopy), image tool and ball shear test. The IMCs (intermetallic compounds) were increased with increasing number of thermal cycles. However, the shear strengths of solder ball were decreased with increasing number of thermal cycles. The order of solders which had the highest shear strength as follow: Sn-3.5wt%Ag-0.7wt%Cu, Sn-0.7wt%Cu, Sn-37wt%Pb.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.1
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• pp.83-90
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• 2017

In this paper, we evaluated the solderability of thin electroless nickel-electroless palladium-immersion gold (ENEPIG) plating layer for fine-pitch package applications. Firstly, the wetting behavior, interfacial reactions, and mechanical reliability of a Sn-3.0Ag-0.5Cu (SAC305) solder alloy on a thin ENEPIG coated substrate were evaluated. In the wetting test, maximum wetting force increased with increasing immersion time, and the wetting force remained a constant value after 5 s immersion time. In the initial soldering reaction, $(Cu,Ni)_6Sn_5$ intermetallic compound (IMC) and P-rich Ni layer formed at the SAC305/ENEPIG interface. After a prolonged reaction, the P-rich Ni layer was destroyed, and $(Cu,Ni)_3Sn$ IMC formed underneath the destroyed P-rich Ni layer. In the high-speed shear test, the percentage of brittle fracture increased with increasing shear speed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.24-24
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• 2009

ENIG(Electroless Nickel Immersion Gold) is the surface treatment method that is used most widely at fine pitch's SMT and BGA packaging process. In this paper, we have studied the effect of P content variation during ENIG process on those phenomena related to the solder joint. The effect of P content was discussed using the results obtained from FE-SEM, EPMA, EDS and FIB. Finally, it was concluded that the more P-content in Ni layer, the thicker P-rich layer.