• Title/Summary/Keyword: Sn bump

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The Effects of UBM and SnAgCu Solder on Drop Impact Reliability of Wafer Level Package

  • Kim, Hyun-Ho;Kim, Do-Hyung;Kim, Jong-Bin;Kim, Hee-Jin;Ahn, Jae-Ung;Kang, In-Soo;Lee, Jun-Kyu;Ahn, Hyo-Sok;Kim, Sung-Dong
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.3
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    • pp.65-69
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    • 2010
  • In this study, we investigated the effects of UBM(Under Bump Metallization) and solder composition on the drop impact reliability of wafer level packaging. Fan-in type WLP chips were prepared with different solder ball composition (Sn3.0Ag0.5Cu, and Sn1.0Ag0.5Cu) and UBM (Cu 10 ${\mu}m$, Cu 5 ${\mu}m$\Ni 3 ${\mu}m$). Drop test was performed up to 200 cycles with 1500G acceleration according to JESD22-B111. Cu\Ni UBM showed better drop performance than Cu UBM, which could be attributed to suppression of IMC formation by Ni diffusion barrier. SAC105 was slightly better than SAC305 in terms of MTTF. Drop failure occurred at board side for Cu UBM and chip side for Cu\Ni UBM, independent of solder composition. Corner and center chip position on the board were found to have the shortest drop lifetime due to stress waves generated from impact.

Effects of PCB ENIG and OSP Surface Finishes on the Electromigration Reliability and Shear Strength of Sn-3.5Ag PB-Free Solder Bump (PCB의 ENIG와 OSP 표면처리에 따른 Sn-3.5Ag 무연솔더 접합부의 Electromigration 특성 및 전단강도 평가)

  • Kim, Sung-Hyuk;Lee, Byeong-Rok;Kim, Jae-Myeong;Yoo, Sehoon;Park, Young-Bae
    • Korean Journal of Materials Research
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    • v.24 no.3
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    • pp.166-173
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    • 2014
  • The effects of printed circuit board electroless nickel immersion gold (ENIG) and organic solderability preservative (OSP) surface finishes on the electromigration reliability and shear strength of Sn-3.5Ag Pb-free solder bump were systematically investigated. In-situ annealing tests were performed in a scanning electron microscope chamber at 130, 150, and $170^{\circ}C$ in order to investigate the growth kinetics of intermetallic compound (IMC). Electromigration lifetime and failure modes were investigated at $150^{\circ}C$ and $1.5{\times}10^5A/cm^2$, while ball shear tests and failure mode analysis were conducted under the high-speed conditions from 10 mm/s to 3000 mm/s. The activation energy of ENIG and OSP surface finishes during annealing were evaluated as 0.84 eV and 0.94 eV, respectively. The solder bumps with ENIG surface finish showed longer electromigration lifetime than OSP surface finish. Shear strengths between ENIG and OSP were similar, and the shear energies decreased with increasing shear speed. Failure analysis showed that electrical and mechanical reliabilities were very closely related to the interfacial IMC stabilities.

Novel Low-Volume Solder-on-Pad Process for Fine Pitch Cu Pillar Bump Interconnection

  • Bae, Hyun-Cheol;Lee, Haksun;Eom, Yong-Sung;Choi, Kwang-Seong
    • Journal of the Microelectronics and Packaging Society
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    • v.22 no.2
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    • pp.55-59
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    • 2015
  • Novel low-volume solder-on-pad (SoP) process is proposed for a fine pitch Cu pillar bump interconnection. A novel solder bumping material (SBM) has been developed for the $60{\mu}m$ pitch SoP using screen printing process. SBM, which is composed of ternary Sn-3.0Ag-0.5Cu (SAC305) solder powder and a polymer resin, is a paste material to perform a fine-pitch SoP in place of the electroplating process. By optimizing the volumetric ratio of the resin, deoxidizing agent, and SAC305 solder powder; the oxide layers on the solder powder and Cu pads are successfully removed during the bumping process without additional treatment or equipment. The Si chip and substrate with daisy-chain pattern are fabricated to develop the fine pitch SoP process and evaluate the fine-pitch interconnection. The fabricated Si substrate has 6724 under bump metallization (UBM) with a $45{\mu}m$ diameter and $60{\mu}m$ pitch. The Si chip with Cu pillar bump is flip chip bonded with the SoP formed substrate using an underfill material with fluxing features. Using the fluxing underfill material is advantageous since it eliminates the flux cleaning process and capillary flow process of underfill. The optimized interconnection process has been validated by the electrical characterization of the daisy-chain pattern. This work is the first report on a successful operation of a fine-pitch SoP and micro bump interconnection using a screen printing process.

Precise composition control of Sn-3.0Ag-0.5Cu lead free solder bumping made by two binary electroplating (이원계 전해도금법에 의한 Sn-3.0Ag-0.5Cu 무연솔더 범핑의 정밀 조성제어)

  • Lee Se-Hyeong;Lee Chang-U;Gang Nam-Hyeon;Kim Jun-Gi;Kim Jeong-Han
    • Proceedings of the KWS Conference
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    • 2006.05a
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    • pp.218-220
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    • 2006
  • Sn-3.0Ag-0.5Cu solder is widely used as micro-joining materials of flip chip package(FCP) because of the fact that it causes less dissolution and has good thermal fatigue property. However, compared with ternary electroplating in the manufacturing process, binary electroplating is still used in industrial field because of easy to make plating solution and composition control. The objective of this research is to fabricate Sn-3.0Ag-0.5Cu solder bumping having accurate composition. The ternary Sn-3.0Ag-0.5Cu solder bumping could be made on a Cu pad by sequent binary electroplating of Sn-Cu and Sn-Ag. Composition of the solder was estimated by EDS and ICP-OES. The thickness of the bump was measured using SEM and the microstructure of intermetallic-compounds(IMCs) was observed by SEM and EDS. From the results, contents of Ag and CU found to be at $2.7{\pm}0.3wt%\;and\;0.4{\pm}0.1wt%$, respectively.

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Mechanical Reliability Evaluation of Sn-37Pb Solder/Cu and Sn-37Pb Solder/ENIG Joints Using a High Speed Lap-shear Test (고속 전단시험법을 이용한 Sn-37Pb/Cu 와 Sn-37Pb/ENIG 솔더 접합의 기계적신뢰성 평가)

  • Jeon, Seong-Jae;Hyun, Seung-Min;Lee, Hoo-Jeong;Lee, Hak-Joo
    • Proceedings of the KSME Conference
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    • 2008.11a
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    • pp.250-255
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    • 2008
  • This study utilized a high speed lap-shear test to evaluate the mechanical behavior of Sn-37Pb/Cu and Sn-37Pb/Electroless Nickel immersion Gold under bump metallization solder joints under high speed loading and hence the drop reliability. The samples were aged for 120 h at different temperatures ($120^{\circ}C,\;150^{\circ}C,\;170^{\circ}C$) and afterward tested at different displacement rates (0.01 mm/s to 500 mm/s) to examine the effects of aging on the drop life reliability. The combination of the stress-strain graphs captured from the shear tests and identifying a fracture mode dominant in the samples for different strain rates leads us to conclude that the drop reliability of solder joints degrades as the aging temperature increases, possibly due to the role of the IMC layer. This study successfully demonstrates that the analysis based on a high speed lap-shear test could be critically used to evaluate the drop reliability of solder joints.

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Effects of Intermetallic Compounds Formed during Flip Chip Process on the Interfacial Reactions and Bonding Characteristics (플립칩 공정시 반응생성물이 계면반응 및 접합특성에 미치는 영향)

  • Ha, Jun-Seok;Jung, Jae-Pil;Oh, Tae-Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.2
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    • pp.35-39
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    • 2012
  • We studied interfacial reaction and bonding characteristics of a flip chip bonding with the viewpoint of formation behavior of intermetallic compounds. For this purpose, Sn-0.7Cu and Sn-3Cu solders were reflowed on the Al/Cu and Al/Ni UBMs. When Sn-0.7Cu was reflowed on the Al/Cu UBM, no intermetallic compounds were formed at the solder/UBM interface. The $Cu_6Sn_5$ intermetallic compounds formed by reflowing Sn-3Cu solder on the Al/Cu UBM were spalled from the interface, resulting in delamination of the solder/UBM interface. On the other hand, the $(Cu,Ni)_6Sn_5$ intermetallic compounds were formed by reflowing of Sn-0.7Cu and Sn-3Cu on the Al/Ni UBM and the interfacial bonding between the Sn-Cu solders and the Al/Ni UBM was kept stable.

Intermetallic Formation between Sn-Ag based Solder Bump and Ni Pad in BGA Package (BGA 패키지에서 Sn-Ag계 솔더범프와 Ni pad 사이에 형성된 금속간화합물의 분석)

  • Yang, Seung-Taek;Chung, Yoon;Kim, Young-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.2
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    • pp.1-9
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    • 2002
  • The intermetallic formation between Sn-Ag-(Cu) solders and metal pads in a real BGA package was characterized using SEM, EDS, and XRD. The intermetallic phase formed in the interface between Sn-Ag-Cu and Au/Ni/Cu pad is likely to be ternary compound of $(Cu,Ni)_6Sn_5$ from EDS analysis High concentration of Cu was observed in the solder/Ni interface. XRD analysis confirmed that $\eta -Cu_6 Sn_5$ type was intermetallic phase formed in the interface between Cu containing solders and Ni substrates and $Ni_3$Sn_4$ intermetallic was formed in the Sn-Ag solder/Ni interface. The thickness of intermetallic phase increased with the reflow times and Cu concentration in solder.

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Interconnection Technology Based on InSn Solder for Flexible Display Applications

  • Choi, Kwang-Seong;Lee, Haksun;Bae, Hyun-Cheol;Eom, Yong-Sung;Lee, Jin Ho
    • ETRI Journal
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    • v.37 no.2
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    • pp.387-394
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    • 2015
  • A novel interconnection technology based on a 52InSn solder was developed for flexible display applications. The display industry is currently trying to develop a flexible display, and one of the crucial technologies for the implementation of a flexible display is to reduce the bonding process temperature to less than $150^{\circ}C$. InSn solder interconnection technology is proposed herein to reduce the electrical contact resistance and concurrently achieve a process temperature of less than $150^{\circ}C$. A solder bump maker (SBM) and fluxing underfill were developed for these purposes. SBM is a novel bumping material, and it is a mixture of a resin system and InSn solder powder. A maskless screen printing process was also developed using an SBM to reduce the cost of the bumping process. Fluxing underfill plays the role of a flux and an underfill concurrently to simplify the bonding process compared to a conventional flip-chip bonding using a capillary underfill material. Using an SBM and fluxing underfill, a $20{\mu}m$ pitch InSn solder SoP array on a glass substrate was successfully formed using a maskless screen printing process, and two glass substrates were bonded at $130^{\circ}C$.

Characterization of ZnO Nanorods and SnO2-CuO Thin Film for CO Gas Sensing

  • Lim, Jae-Hwan;Ryu, Jee-Youl;Moon, Hyung-Sin;Kim, Sung-Eun;Choi, Woo-Chang
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.6
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    • pp.305-309
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    • 2012
  • In this study, ZnO nanorods and $SnO_2$-CuO heterogeneous oxide were grown on membrane-type gas sensor platforms and the sensing characteristics for carbon monoxide (CO) were studied. Diaphragm-type gas sensor platforms with built-in Pt micro-heaters were made using a conventional bulk micromachining method. ZnO nanorods were grown from ZnO seed layers using the hydrothermal method, and the average diameter and length of the nanorods were adjusted by changing the concentration of the precursor. Thereafter, $SnO_2$-CuO heterogeneous oxide thin films were grown from evaporated Sn and Cu thin films. The average diameters of the ZnO nanorods obtained by changing the concentration of the precursor were between 30 and 200 nm and the ZnO nanorods showed a sensitivity value of 21% at a working temperature of $350^{\circ}C$ and a carbon monoxide concentration of 100 ppm. The $SnO_2$-CuO heterogeneous oxide thin films showed a sensitivity value of 18% at a working temperature of $200^{\circ}C$ and a carbon monoxide concentration of 100 ppm.