• Proceedings of the KSME Conference
• /
• 2003.11a
• /
• pp.1939-1943
• /
• 2003

The precise structural analysis of $SnO_{2}$ thin film, which was prepared by PECVD and thickness 2400 ${\AA}$, was tried to do the structural refinement using X -ray diffraction data. The observed diffraction patterns of $SnO_{2}$ thin film had the strongly preferred orientation effect. WIMV method was used to correct the preferred orientation effect. The final weighted R-factor, $R_{WD}$ was 7.92 %. The lattice parameters, a = b == 4.7366(1) ${\AA}$ and c = 3.1937(1) ${\AA}$, were almost in accordance with ones of $SnO_{2}$ powder.

• Journal of Welding and Joining
• /
• v.18 no.6
• /
• pp.74-82
• /
• 2000

The fluxless wetting properties of UBM-coated Si-wafer to the binary lead-free solders(Sn-Ag, Sn-Sb, Sjn-In, Sn0Bi) were estimated by wetting balance method. With the new wettability indices from the wetting curves of one side coated specimen, the wetting property estimation of UBM-coated Si-wafer was possible. For UBM of Si-chip, Au/Cu/Cr UBm was better than au/Ni/TI in the point of wetting time/ At general reflow process temperature, the wettability of high melting point solders(Sn-Sb, Sn-Ag) was better than that of low melting point one(Sn-Bi, Sn-In). The contact angle of the one side coated Si-plate to the solder could be calculated from the force balance equation by measuring the static state force and the tilt angle.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2011.05a
• /
• pp.163-164
• /
• 2011

본 연구에서는 Ag paste의 전도성 필러로 사용되는 Ag 파우더를 대체하고자 Ag-coated SnO 파우더가 합성되었다. Ag-coated SnO 파우더의 합성을 위해서는 (1) 균일한 SnO 파우더 합성, (2) SnO 파우더 위에 Ag 무전해도금 과정이 수행 되어야 한다. 본 발표에서는 무전해 도금과정 중 Ag입자의 초기 핵생성 및 성장 관점에서, SnO 파우더의 전처리 조건, 반응 온도 및 pH, 첨가되는 환원제 양의 효과가 조사되었다.

• Archives of Metallurgy and Materials
• /
• v.63 no.3
• /
• pp.1467-1471
• /
• 2018

The objective of the present study was to investigate the effects of Sn addition on the mechanical and corrosion properties of Mg-1Zn-1Zr-xSn (x = 1, 2, 3, 4, 5 wt.%) alloys prepared by powder-in-tube rolling (PTR) method. The PTR-treated Mg alloys reached 98.3% of theoretical density. The hardness of the alloy increased with Sn addition. Two main intermetallic phases, Mg₂Sn and Zn₂Zr₃, were formed in the alloys. The Mg₂Sn intermetallic particles were observed along the grain boundaries, while the Zn₂Zr₃ particles were distributed in the Mg matrix. The addition of 1 wt. % Sn caused the corrosion potential to shift toward a more positive value, and the resulting alloy exhibited low corrosion current density.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.33 no.2
• /
• pp.83-90
• /
• 2023

The β-Ga₂O₃ has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga₂O₃ has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga₂O₃ single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga₂O₃ single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga₂O₃ were prepared by adding different mole ratios of SnO₂ powder to Ga₂O₃ powder, and β-Ga₂O₃ single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga₂O₃ single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga₂O₃ single crystal according to the Sn doping were extensively investigated.

• Journal of the Korea Safety Management & Science
• /
• v.10 no.2
• /
• pp.211-216
• /
• 2008

Using this model, SN ratio of taguchi method for each of subjective factors as well as values of weights are used in this comprehensive positioning method for product. A example is presented to illustrate the model and to show a rank reversal when compared to a model that eliminates the highest and lowest customers' values allocating the weights and the subjective factors.

• Journal of Korean Society for Quality Management
• /
• v.26 no.2
• /
• pp.17-26
• /
• 1998

Taguchi's parameter design is a method for quality improvement by making the performance fo a system robust to noise. Parameter design with dynamic characteristics has been recently the subject of much interest. This paper is concerned with a review and a generalization of the Signal-to-Noise (SN) ratio, a quality measure for parameter design with dynamic characteristics, proposed by Taguchi. We present a method for determination and analysis of the generalized SN ratio and illustrate its implementation by example.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.2
• /
• pp.276-283
• /
• 1997

A dry impregnation method was used for preparing pellet type Pt/$SnO_2$ gas sensor. The crystal structure, direction of the crystal, crystal size and microstructure between the catalyst and the support ($SnO_2$) were characterized with electron diffraction analysis, transmission electron microscopy, scanning electron microscopy. The characterization indicates that when Pt/$SnO_2$ sample is calcined at $400^{\circ}C$, the Cl content associated with the Pt phase diminishes and the part of Pt is moved into $SnO_2$ support. This results in the enhancement of gas sensitivity. After the reactor with a Pt/$SnO_2$ sample was run with a flow rate of 30 sccm (a mixture of 0.5% $H_2$ in $_N2$) for a while, the resistance of $SnO_2$ was saturated, but the $SnO_2$ kept absorbing $H_2$ gas. This indicates that the surface state was saturated. For the 14 ppm $H_2$ gas, the sensitivity of Pt/$SnO_2$ devices was about 81% at an operating temperature of $300^{\circ}C$.

• Applied Chemistry for Engineering
• /
• v.18 no.5
• /
• pp.449-453
• /
• 2007

Synthesis of Sn-GIC (Graphite intercalated compound) and its electrochemical characteristics were investigated to find a method for enhancing the performance of carbon anode of lithium ion battery. The content of Sn intercalated in graphite interlayer increased with increase of concentration of $SnCl_2$ solution and increase of the heat treatment temperature of dried graphite after dipped in $SnCl_2$ solution, respectively. And initial discharge capacity increased upon increase of intercalated Sn content. Sn-GIC with excellent electrochemical performance, which can be synthesized by heat treatment at $900^{\circ}C$ after dipped in 1.0 M $SnCl_2$ solution, showed 356 mAh/g of initial discharge capacity and 13% of capacity decay after 10 cycles.

• Korean Journal of Materials Research
• /
• v.20 no.8
• /
• pp.408-411
• /
• 2010

Indium doped $SnO_2$ thick films for gas sensors were fabricated by a screen printing method on alumina substrates. The effects of indium concentration on the structural and morphological properties of the $SnO_2$ were investigated by X-ray diffraction and Scanning Electron Microscope. The structural properties of the $SnO_2$:In by X-ray diffraction showed a (110) dominant $SnO_2$ peak. The size of $SnO_2$ particles ranged from 0.05 to $0.1\;{\mu}m$, and $SnO_2$ particles were found to contain many pores, according to the SEM analysis. The thickness of the indium-doped $SnO_2$ thick films for gas sensors was about $20\;{\mu}m$, as confirmed by cross sectional SEM image. Sensitivity of the $SnO_2$:In gas sensor to 2000 ppm of $CO_2$ gas and 50 ppm of H2S gas was investigated for various indium concentrations. The highest sensitivity to $CO_2$ gas and H2S gas of the indium-doped $SnO_2$ thick films was observed at the 8 wt% and 4 wt% indium concentration, respectively. The good sensing performances of indium-doped $SnO_2$ gas sensors to $CO_2$ gas were attributed to the increase of oxygen vacancies and surface area in the $SnO_2$:In. The $SnO_2$:In gas sensors showed good selectivity to $CO_2$ gas.