• Journal of Electrochemical Science and Technology
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• 제11권1호
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• pp.92-98
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• 2020

SnO₂-based high-capacity anode materials are attractive candidate for the next-generation high-performance lithium-ion batteries since the theoretical capacity of SnO₂ can be ideally extended from 781 to 1494 mAh g^-1. Here 3D etched Cu foam is applied as a current collector for electron path and simultaneously a substrate for the SnO₂ coating, for developing an integrated electrode structure. We fabricate the 3D etched Cu foam through an auto-catalytic electroless plating method, and then coat the SnO₂ onto the self-supporting substrate through a simple sol-gel method. The catalytic dissolution of Cu metal makes secondary pores of both several micrometers and several tens of micrometers at the surface of Cu foam strut, besides main channel-like interconnected pores. Especially, the additional surface pores on etched Cu foam are intended for penetrating the individual strut of Cu foam, and thereby increasing the surface area for SnO₂ coating by using even the internal of Cu foam. The increased areal capacity with high structural integrity upon cycling is demonstrated in the SnO₂-coated 3D etched Cu foam. This study not only prepares the etched Cu foam using the spontaneous chemical reactions but also demonstrates the potential for electroless plating method about surface modification on various metal substrates.

• 센서학회지
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• 제24권6호
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• pp.364-367
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• 2015

Tin oxide thin films were fabricated on glass substrates by the successive ionic layer adsorption and reaction (SILAR) method at room temperature and ambient pressure. Before measuring their properties, all samples were annealed at $500^{\circ}C$ for 2 h in air. Film thickness increased with the number of cycles; X-ray diffraction patterns for the annealed $SnO_2$ thin films indicated a $SnO_2$ single phase. Thickness of the $SnO_2$ films increased from 12 to 50 nm as the number of cycles increased from 20 to 60. Although the optical transmittance decreased with thickness, 50 nm $SnO_2$ thin films exhibited a high value of more than 85%. Regarding electronic properties, sheet resistance of the films decreased as thickness increased; however, the measured resistivity of the thin film was nearly constant with thickness ($3{\times}10^{-4}ohm/cm$). From Hall measurements, the 50 nm thickness $SnO_2$ thin film had the highest mobility of the samples ($8.6cm^2/(V{\cdot}s)$). In conclusion, optical and electronic properties of $SnO_2$ thin films could be controlled by adjusting the number of SILAR cycles.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.185.2-185.2
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• 2015

Tin Oxide (SnO2) has been widely investigated as a transparent conducting oxide (TCO) and can be used in optoelectronic devices such as solar cell and flat-panel displays. In addition, it would be applicable to fabricating the wide bandgap semiconductor because of its bandgap of 3.6 eV. There have been concentrated on the improvement of optical properties, such as conductivity and transparency, by doping Indium Oxide and Gallium Oxide. Recently, with development of fabrication techniques, high-qulaity SnO2 epitaxial thin films have been studied and received much attention to produce the electronic devices such as sensor and light-emitting diode. In this study, powder sputtering method was employed to deposit epitaxial thin films on sapphire (0001) substrates. A commercial SnO2 powder was sputtered. The samples were prepared with varying the growth parameters such as gas environment and film thickness. Then, the samples were characterized by using XRD, SEM, AFM, and Raman spectroscopy measurements. The details of physical properties of epitaxial SnO2 thin films will be presented.

• 한국표면공학회지
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• 제38권6호
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• pp.216-226
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• 2005

Pb-Free Technology was born with environmental problems of electronic component, Being connected by big and small project of every country. Also, in each country environment is connected and various standards of IEC, ISO, MIL, JIS, KS, JEDEC, EIAJ etc. All products can divide at solder part and finishing part These can tested each and synthetically divide. This research is reliability evaluation for three kind of ph-free SnCu solder plating solution and it's deposit. First, executed analysis about Pure Sn, SnCu solutions and plating surface by way similar to other plating solution analysis. Next, executed reliability about test method and equipment for reliable analyzer system construction. Next, data comparison and estimation, main estimation test method and item's choice. In this paper the systematic surface analysis and reliability for plating solutions and it's deposit in metal surface finishing processes could be shown.

• 한국재료학회지
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• 제15권1호
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• pp.47-53
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• 2005

The E.M.F. of the galvanic cell with fused salt was measured to determine the activities of zinc at 720-860 K over the entire composition range of liquid Zn-In and Zn-Sn alloys. The cell used was as follows: $$(-)W{\mid}Zn(pure){\mid}Zn^{2+}(KCl-LiCl){\mid}Zn(in\;Zn-In\;or\;Zn-Sn\;alloy){\mid}W(+)$$ The activities of zinc in the alloys showed positive deviation from Raoult's law over the entire composition range. The activity of cadmium and some thermodynamic functions such as Gibbs free energy, enthalpy and entropy were derived from the results by the thermodynamic relationship. The comparison of the results and the literature data was made. The liquid Zn-In and Zn-Sn alloys are found to be close tn the regular solution. The concentration fluctuations in long wavelength limit, $S_{cc}(o)$, in the liquid alloy were calculated from the experimental results.

• 마이크로전자및패키징학회지
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• 제11권2호
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• pp.23-28
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• 2004

본 실험에서는 Ag 층을 이용한 무 플럭스 접합 공정을 개발하였으며 Ag의 유무에 따른 효과를 관찰하기 위해 In ($10{\mu}m$)과 Sn ($10{\mu}m$)솔더 및 Ag (100 nm)/In과 Ag/Sn 솔더를 thermal evaporation 방법으로 하부 금속층 위에 형성하였다. 접합부의 접촉저항과 전단 하중을 측정하기 위해 쿠폰시편을 제조하였으며 이리한 쿠폰시편은 $130^{\circ}C$에서 0.8, 1.6, 3.2 MPa의 접합압력을 가하여 30초간 접합을 실시하였다. 전단하중과 4단자 저항측정법을 이용하여 접합부의 특성을 분석하였으며 주사전자현미경(Scanning Electron Microscope), EDS (Energy Dispersive Spectrometry)과 X-ray mapping을 통해 접합부를 관찰하였다. 전단하중 측정 결과 0.8 MPa에서는 In-Sn 솔더의 접합이 이루어지지 않았으며 접합압력이 증가해도 Ag/In-Ag/Sn 시편의 전단하중 측정값이 In-Sn 시편에 비해 높게 나타났다. 접합부의 저항감은 $2-4\;m{\Omega}$을 나타내었으며 접합압력이 증가할수록 In-Sn 혼합층이 더 많이 관찰되었다.

• 한국재료학회지
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• 제18권4호
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• pp.187-192
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• 2008

Multi-walled carbon nanotube (MWNT)/$SnO_2$ nano-composite (MSC) for the anode electrode of a Li-ion battery was prepared using a homogeneous precipitation method with $SnCl_2$ precursors in the presence of MWNT. XRD results indicate that when annealed in Ar at $400^{\circ}C$, $Sn_6O_4(OH)_4$ was fully converted to $SnO_2$ phases. TEM observations showed that most of the $SnO_2$ nanoparticles were deposited directly on the outside surface of the MWNT. The electrochemical performance of the MSC electrode showed higher specific capacities than a MWNT and better cycleability than a nano-$SnO_2$ electrode. The electrochemical performance of the MSC electrode improved because the MWNT in the MSC electrode absorbed the mechanical stress induced from a volume change during alloying and de-alloying reactions with lithium, leading to an increase in the electrical conductivity of the composite material.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.198-198
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• 2006

SnO2가 첨가된 In2O3(ITO) sputtering 타켓은 넓은 파장영역에서의 투광성과 높은 전기전도도의 특성 때문에 여러 종류의 평판형 디스플레이 제품에 사용되고 있다. 사용된 In2O3와 SnO2 분말은 높은 순도의 금속을 사용하였으며, 공질법을 이용하여 분말을 제조하였으며, 혼합된 In2O3-SnO2 분말은 하소조건과 소결조건에 따라 특성을 평가 하였다. 본 연구의 목적인 ITO sprttering 타켓의 SnO2 분산조건은 하소 온도가 증가함에 따라 분산성이 뛰어났으며, 조사된 30wt% 에서 5wt%로 SnO2의 함량이 감소함에 따라 분산성은 향상되었다. 이러한 결과들로부터 ITO 타켓 밀도와 SnO2의 분산성은 1150C 이상에서 휘발하는 SnO2의 량에 의해 크게 영향을 받는다.

• 한국정보통신학회논문지
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• 제10권9호
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• pp.1641-1647
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• 2006

나노입자 크기를 가진 얇은 $SnO_2$ 박막을 이용하여 CO 및 $H_2S$에 대한 우수한 감도를 가지는 복합 마이크로 가스센서 어레이를 제작하였다. 나노입자의 박막을 만들기 위해서 약 $2500{\AA}$ 두께의 $SnO_2,\;SnO_2(+Pt),\;SnO_2(+CuO)$ 막을 셰도우마스크를 사용하여 형성 한 후, 이를 $600{\sim}800^{\circ}C$의 온도에서 산화하므로서 나노입자의 $SnO_2$ 모물질의 가스감지 박막을 형성하였다. 실리콘 기판의 마이크로센서의 형태로 제작된 $SnO_2(Pt)$ 및 $SnO_2(+CuO)$ 가스센서는 각각 CO 및 $H_2S$ 가스에 대한 매우 우수한 감도를 나타내는 것을 확인하였다.

• 공업화학
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• 제5권3호
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• pp.517-523
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• 1994

DGEBA(diglycidyl ether of bisphenol A)/MDA(4,4'-methylene dianiline)/SN(succinonitrile)/HQ(hydroquinone)계의 경화반응 속도론 및 메카니즘을 연구하였다. SN과 HQ는 반응성 첨가제와 촉매로 도입하였다. 경화반응 속도론은 DSC 분석에 의해 Kissinger equation과 fractional-life법을 이용하여 연구하였다. DGEBA/MDA/SN 계의 활성화에너지와 반응차수는 SN의 함량에 관계없이 거의 일정하였고, 촉매로써 HQ가 첨가됨으로 인해 활성화 에너지와 반응시작온도가 낮아졌다. 이들 계의 반응 메카니즘을 고찰하기위하여 SN의 함량에 따라 FT-IR을 측정하였다. 그리고, SN:HQ의 혼합비는 4:1이었다. Diamine으로 경화되는 에폭시 수지의 경화반응 메카니즘은 primary amine-epoxy 반응, secondary amine-epoxy 반응, epoxy-hydroxyl 반응이 일어나는 것으로 알려져 있다. DGEBA/MDA/SN/HQ 계에서는 HQ의 hydroxyl 기가 epoxy 및 amine과 결합하여 전이상태를 형성하여 epoxide ring을 빠르게 개환시켜줌으로써 amine-epoxy반응이 쉽게 일어남을 알았다.