• Journal of Power Electronics
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• v.12 no.2
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• pp.317-325
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• 2012

Resonant immittance converter (RIC) topologies can transform a current source into a voltage source (Type-I RICs) and vice versa (Type-II RICs), thereby making them suitable for many power electronics applications. RICs are operated at a fixed frequency where the resonant immittance network (RIN) exhibits immittance conversion characteristics. It is observed that the low-frequency response of Type-II RINs is relatively flat and that the state variables associated with Type-II RINs affect the response only at the high frequencies in the vicinity of the switching frequency. The overall response of a Type-II RIC is thus dominated by the filter response, which is particularly important for the controller design. Therefore, an approximate equivalent circuit model and a small-signal model of Type-II RICs are proposed in this paper, neglecting the high-frequency response of Type-II RINs. While the proposed models greatly simplify and speed-up the analysis, it adequately predicts the open-loop transient and small-signal ac behavior of Type-II RICs. The validity of the proposed models is confirmed by comparisons of their results with those obtained from a cycle-by-cycle simulation and with an experimental prototype.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.1
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• pp.49-58
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• 1998

In this paper, a new equivalent circuit model for quantum-well laser diode (LD) is proposed. The model includes carrier transport effects in the SCH region, and rprovides, in a stable and accurate manner, large-and small-signal responses of laser diode output power as function of injected currents. SPICE simulation was performed using the circuit model and results are presented for L-I characteristics, pulse and frequency responses under various conditions. It is expencted that the new equaivalent circuit model will find useful applications for designing and analyzing OEIC, LD driver circuits, and LD packaging.

• Transactions on Electrical and Electronic Materials
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• v.9 no.6
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• pp.260-264
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• 2008

The operational characteristics of superconducting amplifier using vortex flux flow were analyzed from an equivalent circuit in which its current-voltage characteristics for the vortex motion in YBCO microbridge were reflected. For the analysis of operation as an amplifier, dc bias operational point for the superconducting amplifier is determined and then ac operational characteristics for the designed superconducting amplifier were investigated. The variation of transresistance, which describes the operational characteristics of superconducting amplifier, was estimated with respect to conditions of dc bias. The current and the voltage gains, which can be derived from the circuit for small signal analysis, were calculated at each operational point and compared with the results obtained from the numerical analysis for the small signal circuit. From our paper, the characteristics of amplification for superconducting flux flow transistor (SFFT) could be confirmed. The development of the superconducting amplifier applicable to various devices is expected.

• Proceedings of the KIPE Conference
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• 1997.07a
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• pp.101-110
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• 1997

The circuit effects due to the transformer primary side series equivalent inductance in the Zero Voltage Switching Pulse Width Modulated Half Bridge DC/DC Converter and its impact on the effective duty are analyzed. The steady state equations and the small signal model of the converter are derived incorporating the effects of the complementary control and the utilization of transformer primary side series equivalent inductance. The open plant dynamics are analyzed on the basis of the model derived. The model predictions are confirmed by experimental measurements.

• Journal of the Korean Institute of Intelligent Systems
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• v.11 no.6
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• pp.500-504
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• 2001

The present approach based on the genetic algorithm with improved selections of bonds was adopted to extract a bridged T equivalent circuit elements of $\times10\mu m^2$InGaP/GaAs HBT. the small-signal model parameters were extracted using the genetic algorithm from S-parameters measured at different frequencies under multiple forward-active biases, which demonstrate physically meaningful values and consistency. The agreement between the measured and modeled S-parameters is excellent over the frequency range of 2 to 26.5GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.113-119
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• 2005

4H-SiC planar MESFETs were fabricated using ion-implantation on semi-insulating substrate without recess gate etching. A modified RCA method was used to clean the substrate before each procedure. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The fabricated MESFET showed good contact properties and DC/RF performances. The maximum oscillation frequency of 34 GHz and the cut-off frequency of 9.3 GHz were obtained. The power gain was 10.1 dB and the output power of 1.4 W was obtained for 1 mm-gate length device at 2 GHz. The fabricated MESFETs showed the charge trapping-free characteristics and were characterized by the extracted small-signal equivalent circuit parameters.

• Proceedings of the KIPE Conference
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• 2004.07b
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• pp.610-614
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• 2004

Recently, an active-clamp, full-bridge boost converter has been actively studied for high-power applications such as power factor correction and battery discharger. However, DC and AC modeling for this converter has not conquered. In this paper, a DC and small-signal AC modeling for the active-clamp, full-bridge boost converter is described. Based on the operation principle, the ac part of the converter can be replaced by a do counterpart. Then, a conceptual equivalent circuit is derived by rearranging the switches. The equivalent circuit for this converter consists of CCM (Continuous conduction mode) boost and DCM (Discontinuous conduction mode) buck converter. The analyses for the equivalent CCM boost and DCM buck converter are done using the model of PWM switch. The theoretical modeling results are confirmed through experiment or SIMPLIS simulation.

• Journal of Positioning, Navigation, and Timing
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• v.10 no.3
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• pp.229-234
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• 2021

In this paper, a study was conducted on the power amplifier control required to design an eLoran transmitter system using a low-height antenna. The eLoran transmitter developed during the eLoran technology development project conducted in Korea used a small 35 m antenna due to the difficulty of securing a site for antenna installation. This antenna height is very low compared to the height of 750 m which is required for eLoran 100 kHz signal transmission without any radiation loss. In the case of using such a small antenna, not only the radiation efficiency of the transmission is lowered, but also the power module control must be performed more precisely in order to transmit the eLoran standard signal. The equivalent RLC circuit of the transmitter system was implemented and transient analysis was conducted to derive the input required voltage for satisfying the output requirement. The voltage waveform was also generated by the RLC circuit analysis to generate the eLoran signal. Furthermore, we suggest power width modulation method to control eLoran power amplifier module more sophisticatedly.

• Journal of Korea Society of Industrial Information Systems
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• v.6 no.3
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• pp.123-127
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• 2001

The prediction method of the parameter C/sub gs/ of CMOS transistor is proposed by calculating the mobil charge in inversion layer of COMS transistor. This parameter C/sub gs/ decided on the cutoff frequency in MOS transistor in RF range and coupled input and output. This parameter C/sub gs/ in RF range is very important parameter in small signal circuit model. This proposed method is contributed to developing software of extracting parameter value in equivalent circuit model. The method provide the important information to construct a RF nonlinear model for multifinger gate MOSFET. This method will be very valuable to develop a large signal MOSFET model for nonlinear RF IC design.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.809-812
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• 2005

In this work, a new method for extracting substrate parameters of RF MOSFETs based on 3-port measurement is presented using device simulation. A T-type substrate resistance network is used. 3-port Y-parameter analyses were performed on the equivalent circuit of RF MOSFETs. All the components in the RF MOSFETs when the device is turned off were extracted directly from the 3-port device simulation data. The small-signal output admittance $Y_{22}$ can be well modeled up to 40 GHz. From the 3-port simulation and modeling results, it was verified that the proposed equivalent circuit and parameter extraction method was more accurate than the single substrate resistance model.